DE69922132D1 - Spiegelprojektionssystem für einen lithographischen abtast-projektionsapparat sowie lithographischer apparat mit einen solchen system - Google Patents

Spiegelprojektionssystem für einen lithographischen abtast-projektionsapparat sowie lithographischer apparat mit einen solchen system

Info

Publication number
DE69922132D1
DE69922132D1 DE69922132T DE69922132T DE69922132D1 DE 69922132 D1 DE69922132 D1 DE 69922132D1 DE 69922132 T DE69922132 T DE 69922132T DE 69922132 T DE69922132 T DE 69922132T DE 69922132 D1 DE69922132 D1 DE 69922132D1
Authority
DE
Germany
Prior art keywords
lithographic
projection
mirror
scan
mirror projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69922132T
Other languages
English (en)
Other versions
DE69922132T2 (de
Inventor
J Braat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69922132D1 publication Critical patent/DE69922132D1/de
Publication of DE69922132T2 publication Critical patent/DE69922132T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
DE69922132T 1998-05-06 1999-04-26 Spiegelprojektionssystem für einen lithographischen abtast-projektionsapparat sowie lithographischer apparat mit einen solchen system Expired - Lifetime DE69922132T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP98201484 1998-05-06
EP98201484 1998-05-06
PCT/IB1999/000752 WO1999057606A1 (en) 1998-05-06 1999-04-26 Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system

Publications (2)

Publication Number Publication Date
DE69922132D1 true DE69922132D1 (de) 2004-12-30
DE69922132T2 DE69922132T2 (de) 2006-03-02

Family

ID=8233690

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69922132T Expired - Lifetime DE69922132T2 (de) 1998-05-06 1999-04-26 Spiegelprojektionssystem für einen lithographischen abtast-projektionsapparat sowie lithographischer apparat mit einen solchen system

Country Status (6)

Country Link
US (1) US6255661B1 (de)
EP (1) EP1004057B1 (de)
JP (1) JP4286330B2 (de)
DE (1) DE69922132T2 (de)
TW (1) TWI238896B (de)
WO (1) WO1999057606A1 (de)

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US7186983B2 (en) * 1998-05-05 2007-03-06 Carl Zeiss Smt Ag Illumination system particularly for microlithography
DE19903807A1 (de) * 1998-05-05 1999-11-11 Zeiss Carl Fa Beleuchtungssystem insbesondere für die EUV-Lithographie
US6859328B2 (en) * 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
US6859515B2 (en) * 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
US6396067B1 (en) * 1998-05-06 2002-05-28 Koninklijke Philips Electronics N.V. Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
US7151592B2 (en) * 1999-02-15 2006-12-19 Carl Zeiss Smt Ag Projection system for EUV lithography
DE19948240A1 (de) * 1999-02-15 2000-08-24 Zeiss Carl Fa Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
US6600552B2 (en) 1999-02-15 2003-07-29 Carl-Zeiss Smt Ag Microlithography reduction objective and projection exposure apparatus
EP1772775B1 (de) * 1999-02-15 2008-11-05 Carl Zeiss SMT AG Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
USRE42118E1 (en) * 1999-02-15 2011-02-08 Carl-Zeiss-Smt Ag Projection system for EUV lithography
US6985210B2 (en) * 1999-02-15 2006-01-10 Carl Zeiss Smt Ag Projection system for EUV lithography
TW538256B (en) * 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
US6867913B2 (en) 2000-02-14 2005-03-15 Carl Zeiss Smt Ag 6-mirror microlithography projection objective
GB2377308B (en) 2000-03-03 2004-03-17 Dun And Bradstreet Inc Facilitating a transaction in electronic commerce
JP2002057963A (ja) * 2000-08-10 2002-02-22 Canon Inc 表示装置
DE10052289A1 (de) * 2000-10-20 2002-04-25 Zeiss Carl 8-Spiegel-Mikrolithographie-Projektionsobjektiv
EP1327172A1 (de) 2000-10-20 2003-07-16 Carl Zeiss 8-spiegel-mikrolithographie-projektionsobjektiv
EP1679550A1 (de) 2000-11-07 2006-07-12 ASML Netherlands B.V. Lithografische Vorrichtung und Herstellungsverfahren dafür
TW573234B (en) * 2000-11-07 2004-01-21 Asml Netherlands Bv Lithographic projection apparatus and integrated circuit device manufacturing method
JP2004514943A (ja) * 2000-11-28 2004-05-20 カール・ツアイス・エスエムテイ・アーゲー １５７ｎｍリソグラフィ用の反射屈折投影系
EP1342128A2 (de) * 2000-12-12 2003-09-10 Carl Zeiss SMT AG Projektionssystem für die euv-lithographie
JP2003045782A (ja) * 2001-07-31 2003-02-14 Canon Inc 反射型縮小投影光学系及びそれを用いた露光装置
JP2004158786A (ja) * 2002-11-08 2004-06-03 Canon Inc 投影光学系及び露光装置
JP3938040B2 (ja) * 2002-12-27 2007-06-27 キヤノン株式会社 反射型投影光学系、露光装置及びデバイス製造方法
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
WO2005050323A1 (en) 2003-10-29 2005-06-02 Carl Zeiss Smt Ag Optical assembly for photolithography
KR101088250B1 (ko) * 2003-10-29 2011-11-30 칼 짜이스 에스엠테 게엠베하 조리개 변경 장치
JP2005172988A (ja) * 2003-12-09 2005-06-30 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20180078354A (ko) 2004-05-17 2018-07-09 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
JP2006245147A (ja) * 2005-03-01 2006-09-14 Canon Inc 投影光学系、露光装置及びデバイスの製造方法
DE602006014368D1 (de) 2005-03-08 2010-07-01 Zeiss Carl Smt Ag Mikrolithographie-projektionssystem mit einer zugänglichen membran- oder aperturblende
JP4750183B2 (ja) * 2005-05-03 2011-08-17 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィー投影光学系
EP2169465A1 (de) * 2005-05-13 2010-03-31 Carl Zeiss SMT AG EUV-Projektionssystem mit sechs Spiegeln
KR101535230B1 (ko) * 2009-06-03 2015-07-09 삼성전자주식회사 Ｅｕｖ 마스크용 공간 영상 측정 장치 및 방법

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Publication number Priority date Publication date Assignee Title
NL9000503A (nl) 1990-03-05 1991-10-01 Asm Lithography Bv Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat.
US5178974A (en) * 1990-10-12 1993-01-12 The United States Of America As Represented By The United States Department Of Energy Virtually distortion-free imaging system for large field, high resolution lithography using electrons, ions or other particle beams
US5222112A (en) * 1990-12-27 1993-06-22 Hitachi, Ltd. X-ray pattern masking by a reflective reduction projection optical system
NL9100410A (nl) 1991-03-07 1992-10-01 Asm Lithography Bv Afbeeldingsapparaat voorzien van een focusfout- en/of scheefstandsdetectie-inrichting.
US5303001A (en) * 1992-12-21 1994-04-12 Ultratech Stepper, Inc. Illumination system for half-field dyson stepper
TW318255B (de) * 1995-05-30 1997-10-21 Philips Electronics Nv
US5805365A (en) * 1995-10-12 1998-09-08 Sandia Corporation Ringfield lithographic camera
US5815310A (en) 1995-12-12 1998-09-29 Svg Lithography Systems, Inc. High numerical aperture ring field optical reduction system
US5686728A (en) 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
US5973826A (en) * 1998-02-20 1999-10-26 Regents Of The University Of California Reflective optical imaging system with balanced distortion

Also Published As

Publication number Publication date
US6255661B1 (en) 2001-07-03
JP2002509654A (ja) 2002-03-26
EP1004057B1 (de) 2004-11-24
WO1999057606A1 (en) 1999-11-11
TWI238896B (en) 2005-09-01
EP1004057A1 (de) 2000-05-31
JP4286330B2 (ja) 2009-06-24
DE69922132T2 (de) 2006-03-02

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition