DE69917010D1 - Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben - Google Patents
Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselbenInfo
- Publication number
- DE69917010D1 DE69917010D1 DE69917010T DE69917010T DE69917010D1 DE 69917010 D1 DE69917010 D1 DE 69917010D1 DE 69917010 T DE69917010 T DE 69917010T DE 69917010 T DE69917010 T DE 69917010T DE 69917010 D1 DE69917010 D1 DE 69917010D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- abrasive composition
- polishing
- atom
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4228898 | 1998-02-24 | ||
JP4228898 | 1998-02-24 | ||
PCT/JP1999/000844 WO1999043761A1 (fr) | 1998-02-24 | 1999-02-24 | Composition abrasive de polissage d'un dispositif semiconducteur et procede de production d'un dispositif semiconducteur afferent |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69917010D1 true DE69917010D1 (de) | 2004-06-09 |
DE69917010T2 DE69917010T2 (de) | 2005-04-07 |
Family
ID=12631866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69917010T Expired - Lifetime DE69917010T2 (de) | 1998-02-24 | 1999-02-24 | Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben |
Country Status (9)
Country | Link |
---|---|
US (2) | US6436835B1 (de) |
EP (1) | EP1061111B1 (de) |
JP (1) | JP3672493B2 (de) |
KR (1) | KR100583842B1 (de) |
AT (1) | ATE266071T1 (de) |
DE (1) | DE69917010T2 (de) |
ES (1) | ES2216490T3 (de) |
TW (1) | TW510917B (de) |
WO (1) | WO1999043761A1 (de) |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100366619B1 (ko) * | 1999-05-12 | 2003-01-09 | 삼성전자 주식회사 | 트랜치 소자분리방법, 트랜치를 포함하는 반도체소자의제조방법 및 그에 따라 제조된 반도체소자 |
JP2001055560A (ja) * | 1999-08-18 | 2001-02-27 | Hitachi Chem Co Ltd | 研磨剤及びそれを用いた基板の研磨方法 |
CN1125862C (zh) * | 1999-09-20 | 2003-10-29 | 长兴化学工业股份有限公司 | 半导体加工用化学机械研磨组合物 |
JP2001144046A (ja) * | 1999-11-12 | 2001-05-25 | Hitachi Chem Co Ltd | 金属用研磨液及びそれを用いた研磨方法 |
US6491843B1 (en) * | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
US6733553B2 (en) | 2000-04-13 | 2004-05-11 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same |
TW586157B (en) * | 2000-04-13 | 2004-05-01 | Showa Denko Kk | Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same |
US6607967B1 (en) * | 2000-11-15 | 2003-08-19 | Lsi Logic Corporation | Process for forming planarized isolation trench in integrated circuit structure on semiconductor substrate |
JP5017574B2 (ja) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | 酸化セリウム研磨剤及び基板の製造方法 |
US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
US7199056B2 (en) | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
JP2003313542A (ja) * | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
US7677956B2 (en) | 2002-05-10 | 2010-03-16 | Cabot Microelectronics Corporation | Compositions and methods for dielectric CMP |
KR100457743B1 (ko) * | 2002-05-17 | 2004-11-18 | 주식회사 하이닉스반도체 | 산화막용 cmp 슬러리 및 이를 이용한 반도체 소자의형성 방법 |
CN100369211C (zh) * | 2002-07-22 | 2008-02-13 | 清美化学股份有限公司 | 半导体用研磨剂、该研磨剂的制造方法和研磨方法 |
US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
KR20040042430A (ko) * | 2002-11-14 | 2004-05-20 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 형성방법 |
KR100627510B1 (ko) * | 2002-12-30 | 2006-09-22 | 주식회사 하이닉스반도체 | 나이트라이드용 cmp 슬러리 |
EP1580802A4 (de) * | 2002-12-31 | 2007-03-28 | Sumco Corp | Schlammzusammensetzung für chemisch-mechanisches polieren, verfahren zur oberflächenplanarisierung eines halbleiterbauelements damit sowie kontrollverfahren zur auswahl des verhältnisses der schlammzusammensetzung |
US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US7066801B2 (en) * | 2003-02-21 | 2006-06-27 | Dow Global Technologies, Inc. | Method of manufacturing a fixed abrasive material |
US6910951B2 (en) | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
KR100570122B1 (ko) * | 2003-05-12 | 2006-04-11 | 학교법인 한양학원 | 나노토포그라피 효과를 보상할 수 있는 화학기계적 연마용슬러리 조성물 및 이를 이용한 반도체소자의 표면 평탄화방법 |
KR100539983B1 (ko) * | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Cmp용 세리아 연마제 및 그 제조 방법 |
JP4637464B2 (ja) * | 2003-07-01 | 2011-02-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
JP4574140B2 (ja) * | 2003-08-27 | 2010-11-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いる研磨方法 |
US6964600B2 (en) * | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
US20050189322A1 (en) * | 2004-02-27 | 2005-09-01 | Lane Sarah J. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
US7470295B2 (en) | 2004-03-12 | 2008-12-30 | K.C. Tech Co., Ltd. | Polishing slurry, method of producing same, and method of polishing substrate |
US20050214191A1 (en) * | 2004-03-29 | 2005-09-29 | Mueller Brian L | Abrasives and compositions for chemical mechanical planarization of tungsten and titanium |
US20050211952A1 (en) * | 2004-03-29 | 2005-09-29 | Timothy Mace | Compositions and methods for chemical mechanical planarization of tungsten and titanium |
TWI283008B (en) * | 2004-05-11 | 2007-06-21 | K C Tech Co Ltd | Slurry for CMP and method of producing the same |
US20050279733A1 (en) * | 2004-06-18 | 2005-12-22 | Cabot Microelectronics Corporation | CMP composition for improved oxide removal rate |
TWI273632B (en) * | 2004-07-28 | 2007-02-11 | K C Tech Co Ltd | Polishing slurry, method of producing same, and method of polishing substrate |
US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US20060097219A1 (en) * | 2004-11-08 | 2006-05-11 | Applied Materials, Inc. | High selectivity slurry compositions for chemical mechanical polishing |
TWI323741B (en) * | 2004-12-16 | 2010-04-21 | K C Tech Co Ltd | Abrasive particles, polishing slurry, and producing method thereof |
KR100641348B1 (ko) * | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
JP2007103514A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP4983603B2 (ja) | 2005-10-19 | 2012-07-25 | 日立化成工業株式会社 | 酸化セリウムスラリー、酸化セリウム研磨液及びこれらを用いた基板の研磨方法 |
JP5290769B2 (ja) * | 2006-01-25 | 2013-09-18 | エルジー・ケム・リミテッド | Cmpスラリー及びこれを用いる半導体ウェハーの研磨方法 |
US20070210278A1 (en) * | 2006-03-08 | 2007-09-13 | Lane Sarah J | Compositions for chemical mechanical polishing silicon dioxide and silicon nitride |
KR100814416B1 (ko) * | 2006-09-28 | 2008-03-18 | 삼성전자주식회사 | 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법 |
JP2008117807A (ja) * | 2006-10-31 | 2008-05-22 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP2008130988A (ja) * | 2006-11-24 | 2008-06-05 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP5375025B2 (ja) * | 2008-02-27 | 2013-12-25 | 日立化成株式会社 | 研磨液 |
JP5819036B2 (ja) * | 2008-03-25 | 2015-11-18 | 三井金属鉱業株式会社 | セリウム系研摩材スラリー |
JP5104796B2 (ja) * | 2009-03-30 | 2012-12-19 | 日立化成工業株式会社 | 研磨剤及びそれを用いた基板の研磨方法 |
WO2010139603A1 (en) | 2009-06-05 | 2010-12-09 | Basf Se | RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP) |
EP2500929B1 (de) * | 2009-11-11 | 2018-06-20 | Kuraray Co., Ltd. | Schlamm für chemisch-mechanisches polieren und verfahren zum polieren von substraten damit |
KR101675378B1 (ko) | 2010-02-25 | 2016-11-23 | 삼성전자주식회사 | 연마 슬러리 및 그를 이용한 절연막 평탄화 방법 |
CN103210047B (zh) | 2010-09-08 | 2018-07-17 | 巴斯夫欧洲公司 | 含n取代的二氮烯*二氧化物和/或n’-羟基-二氮烯*氧化物盐的含水抛光组合物 |
EP2614123B1 (de) | 2010-09-08 | 2017-06-28 | Basf Se | Wässrige polierzusammensetzung und verfahren zum chemisch-mechanisch polieren von substratmaterialien für elektrische, mechanische und optische vorrichtungen |
MY175638A (en) | 2010-09-08 | 2020-07-03 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectic and polysilicon films. |
SG10201510122PA (en) | 2010-12-10 | 2016-01-28 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
WO2012161202A1 (ja) | 2011-05-24 | 2012-11-29 | 株式会社クラレ | 化学機械研磨用エロージョン防止剤、化学機械研磨用スラリーおよび化学機械研磨方法 |
JP2013084836A (ja) * | 2011-10-12 | 2013-05-09 | Toshiba Corp | Cmp方法及び半導体装置の製造方法 |
SG11201404747UA (en) * | 2012-02-10 | 2014-09-26 | Basf Se | Chemical mechanical polishing (cmp) composition comprising a protein |
US9437446B2 (en) | 2012-05-30 | 2016-09-06 | Kuraray Co., Ltd. | Slurry for chemical mechanical polishing and chemical mechanical polishing method |
US9583359B2 (en) | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
JP5893700B1 (ja) * | 2014-09-26 | 2016-03-23 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
US20180086943A1 (en) * | 2015-03-30 | 2018-03-29 | Jsr Corporation | Treatment composition for chemical mechanical polishing, chemical mechanical polishing method, and cleaning method |
JP6582567B2 (ja) * | 2015-06-03 | 2019-10-02 | 日立化成株式会社 | スラリー及びその製造方法、並びに、研磨方法 |
US10421890B2 (en) | 2016-03-31 | 2019-09-24 | Versum Materials Us, Llc | Composite particles, method of refining and use thereof |
KR20230109650A (ko) * | 2020-11-27 | 2023-07-20 | 카오카부시키가이샤 | 산화규소막용 연마액 조성물 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0841443A (ja) * | 1994-07-26 | 1996-02-13 | Okuno Chem Ind Co Ltd | 研磨組成物及び研磨方法 |
JPH08302338A (ja) * | 1995-05-15 | 1996-11-19 | Sony Corp | スラリーおよびこれを用いた半導体装置の製造方法 |
JP3514908B2 (ja) | 1995-11-13 | 2004-04-05 | 株式会社東芝 | 研磨剤 |
JP3230986B2 (ja) * | 1995-11-13 | 2001-11-19 | 株式会社東芝 | ポリッシング方法、半導体装置の製造方法及び半導体製造装置。 |
JPH09137156A (ja) * | 1995-11-16 | 1997-05-27 | Mitsubishi Chem Corp | ハードディスク基板の研磨用組成物及びこれを用いる研磨方法 |
EP0786504A3 (de) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Politurzusammensetzung |
JPH09208933A (ja) | 1996-01-29 | 1997-08-12 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
JPH10321570A (ja) * | 1997-05-15 | 1998-12-04 | Tokuyama Corp | 半導体ウェーハポリッシング用研磨剤及びその製造方法、ポリッシング方法 |
JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JPH10279928A (ja) | 1998-02-27 | 1998-10-20 | Rodel Inc | 研磨速度抑制化合物 |
-
1999
- 1999-02-24 EP EP99906467A patent/EP1061111B1/de not_active Expired - Lifetime
- 1999-02-24 WO PCT/JP1999/000844 patent/WO1999043761A1/ja active IP Right Grant
- 1999-02-24 ES ES99906467T patent/ES2216490T3/es not_active Expired - Lifetime
- 1999-02-24 US US09/622,939 patent/US6436835B1/en not_active Expired - Lifetime
- 1999-02-24 TW TW088102755A patent/TW510917B/zh not_active IP Right Cessation
- 1999-02-24 KR KR1020007009341A patent/KR100583842B1/ko not_active IP Right Cessation
- 1999-02-24 JP JP2000533504A patent/JP3672493B2/ja not_active Expired - Lifetime
- 1999-02-24 DE DE69917010T patent/DE69917010T2/de not_active Expired - Lifetime
- 1999-02-24 AT AT99906467T patent/ATE266071T1/de active
-
2001
- 2001-09-17 US US09/953,127 patent/US6410444B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6436835B1 (en) | 2002-08-20 |
KR20010041248A (ko) | 2001-05-15 |
ES2216490T3 (es) | 2004-10-16 |
WO1999043761A1 (fr) | 1999-09-02 |
ATE266071T1 (de) | 2004-05-15 |
EP1061111A4 (de) | 2001-05-30 |
EP1061111A1 (de) | 2000-12-20 |
JP3672493B2 (ja) | 2005-07-20 |
KR100583842B1 (ko) | 2006-05-26 |
US6410444B1 (en) | 2002-06-25 |
EP1061111B1 (de) | 2004-05-06 |
DE69917010T2 (de) | 2005-04-07 |
US20020045350A1 (en) | 2002-04-18 |
TW510917B (en) | 2002-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |