US6072382A
(en)
*
|
1998-01-06 |
2000-06-06 |
Nonvolatile Electronics, Incorporated |
Spin dependent tunneling sensor
|
US20040017721A1
(en)
*
|
1998-10-30 |
2004-01-29 |
Schwabe Nikolai Franz Gregoe |
Magnetic storage device
|
JP4560847B2
(ja)
*
|
1998-12-28 |
2010-10-13 |
ヤマハ株式会社 |
磁気抵抗ランダムアクセスメモリ
|
CN1145168C
(zh)
*
|
1999-01-13 |
2004-04-07 |
因芬尼昂技术股份公司 |
磁阻随机存取存储器的写/读结构
|
DE50000924D1
(de)
*
|
1999-03-19 |
2003-01-23 |
Infineon Technologies Ag |
Speicherzellenanordnung und verfahren zu deren herstellung
|
US6381171B1
(en)
*
|
1999-05-19 |
2002-04-30 |
Kabushiki Kaisha Toshiba |
Magnetic element, magnetic read head, magnetic storage device, magnetic memory device
|
US6611405B1
(en)
*
|
1999-09-16 |
2003-08-26 |
Kabushiki Kaisha Toshiba |
Magnetoresistive element and magnetic memory device
|
US6727105B1
(en)
*
|
2000-02-28 |
2004-04-27 |
Hewlett-Packard Development Company, L.P. |
Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
|
AU2001243503A1
(en)
*
|
2000-03-09 |
2001-09-17 |
Richard M. Lienau |
Method and apparatus for reading data from a ferromagnetic memory cell
|
EP1134743A3
(de)
|
2000-03-13 |
2002-04-10 |
Matsushita Electric Industrial Co., Ltd. |
Magnetoresistive Anordnung und Speicheranordnung eines magnetoresitiven Effekt Typs
|
US6269018B1
(en)
*
|
2000-04-13 |
2001-07-31 |
International Business Machines Corporation |
Magnetic random access memory using current through MTJ write mechanism
|
JP4020573B2
(ja)
|
2000-07-27 |
2007-12-12 |
富士通株式会社 |
磁性メモリデバイス、および磁性メモリデバイスにおけるデータ読み出し方法
|
JP4309075B2
(ja)
*
|
2000-07-27 |
2009-08-05 |
株式会社東芝 |
磁気記憶装置
|
JP4149647B2
(ja)
|
2000-09-28 |
2008-09-10 |
株式会社東芝 |
半導体記憶装置及びその製造方法
|
US6724674B2
(en)
*
|
2000-11-08 |
2004-04-20 |
International Business Machines Corporation |
Memory storage device with heating element
|
US6563743B2
(en)
*
|
2000-11-27 |
2003-05-13 |
Hitachi, Ltd. |
Semiconductor device having dummy cells and semiconductor device having dummy cells for redundancy
|
US6611453B2
(en)
*
|
2001-01-24 |
2003-08-26 |
Infineon Technologies Ag |
Self-aligned cross-point MRAM device with aluminum metallization layers
|
US6567297B2
(en)
*
|
2001-02-01 |
2003-05-20 |
Micron Technology, Inc. |
Method and apparatus for sensing resistance values of memory cells
|
US6515341B2
(en)
*
|
2001-02-26 |
2003-02-04 |
Motorola, Inc. |
Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
|
JP4731041B2
(ja)
*
|
2001-05-16 |
2011-07-20 |
ルネサスエレクトロニクス株式会社 |
薄膜磁性体記憶装置
|
JP3807254B2
(ja)
*
|
2001-05-30 |
2006-08-09 |
ソニー株式会社 |
磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド
|
EP1391942A4
(de)
|
2001-05-31 |
2007-08-15 |
Nat Inst Of Advanced Ind Scien |
Tunnel-magnetwiderstandselement
|
US6756620B2
(en)
*
|
2001-06-29 |
2004-06-29 |
Intel Corporation |
Low-voltage and interface damage-free polymer memory device
|
US6858862B2
(en)
*
|
2001-06-29 |
2005-02-22 |
Intel Corporation |
Discrete polymer memory array and method of making same
|
US6624457B2
(en)
|
2001-07-20 |
2003-09-23 |
Intel Corporation |
Stepped structure for a multi-rank, stacked polymer memory device and method of making same
|
US6960479B2
(en)
*
|
2001-07-20 |
2005-11-01 |
Intel Corporation |
Stacked ferroelectric memory device and method of making same
|
US6835591B2
(en)
*
|
2001-07-25 |
2004-12-28 |
Nantero, Inc. |
Methods of nanotube films and articles
|
US6706402B2
(en)
|
2001-07-25 |
2004-03-16 |
Nantero, Inc. |
Nanotube films and articles
|
US6574130B2
(en)
|
2001-07-25 |
2003-06-03 |
Nantero, Inc. |
Hybrid circuit having nanotube electromechanical memory
|
US6919592B2
(en)
*
|
2001-07-25 |
2005-07-19 |
Nantero, Inc. |
Electromechanical memory array using nanotube ribbons and method for making same
|
US6643165B2
(en)
|
2001-07-25 |
2003-11-04 |
Nantero, Inc. |
Electromechanical memory having cell selection circuitry constructed with nanotube technology
|
US6869855B1
(en)
|
2001-09-02 |
2005-03-22 |
Borealis Technical Limited |
Method for making electrode pairs
|
US6795281B2
(en)
*
|
2001-09-25 |
2004-09-21 |
Hewlett-Packard Development Company, L.P. |
Magneto-resistive device including soft synthetic ferrimagnet reference layer
|
KR100402390B1
(ko)
*
|
2001-10-05 |
2003-10-17 |
삼성전자주식회사 |
다층 터널접합층을 갖는 반도체 기억장치 및 그 제조방법
|
KR20030034500A
(ko)
*
|
2001-10-23 |
2003-05-09 |
주식회사 하이닉스반도체 |
마그네틱 램
|
US6570783B1
(en)
*
|
2001-11-15 |
2003-05-27 |
Micron Technology, Inc. |
Asymmetric MRAM cell and bit design for improving bit yield
|
JP3866567B2
(ja)
*
|
2001-12-13 |
2007-01-10 |
株式会社東芝 |
半導体記憶装置及びその製造方法
|
JP4278325B2
(ja)
|
2001-12-19 |
2009-06-10 |
株式会社ルネサステクノロジ |
半導体集積回路装置
|
US6795334B2
(en)
*
|
2001-12-21 |
2004-09-21 |
Kabushiki Kaisha Toshiba |
Magnetic random access memory
|
KR100457159B1
(ko)
*
|
2001-12-26 |
2004-11-16 |
주식회사 하이닉스반도체 |
마그네틱 램
|
KR100465598B1
(ko)
*
|
2001-12-26 |
2005-01-13 |
주식회사 하이닉스반도체 |
쇼트키 다이오드를 이용한 마그네틱 램
|
JP2003197875A
(ja)
*
|
2001-12-28 |
2003-07-11 |
Toshiba Corp |
磁気記憶装置
|
US6784028B2
(en)
|
2001-12-28 |
2004-08-31 |
Nantero, Inc. |
Methods of making electromechanical three-trace junction devices
|
US6625059B1
(en)
*
|
2002-03-06 |
2003-09-23 |
Hewlett-Packard Development Company, L.P. |
Synthetic ferrimagnet reference layer for a magnetic storage device
|
US6667897B1
(en)
|
2002-06-28 |
2003-12-23 |
International Business Machines Corporation |
Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer
|
JP2004111437A
(ja)
*
|
2002-09-13 |
2004-04-08 |
Toshiba Corp |
磁気記憶装置
|
US6744651B2
(en)
*
|
2002-09-20 |
2004-06-01 |
Taiwan Semiconductor Manufacturing Company |
Local thermal enhancement of magnetic memory cell during programming
|
US6775183B2
(en)
*
|
2002-10-22 |
2004-08-10 |
Btg International Ltd. |
Magnetic memory device employing giant magnetoresistance effect
|
US6639830B1
(en)
|
2002-10-22 |
2003-10-28 |
Btg International Ltd. |
Magnetic memory device
|
US6890767B2
(en)
*
|
2002-10-24 |
2005-05-10 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method to reduce switch threshold of soft magnetic films
|
US6660568B1
(en)
|
2002-11-07 |
2003-12-09 |
International Business Machines Corporation |
BiLevel metallization for embedded back end of the line structures
|
US7023723B2
(en)
*
|
2002-11-12 |
2006-04-04 |
Nve Corporation |
Magnetic memory layers thermal pulse transitions
|
US6909628B2
(en)
*
|
2003-02-13 |
2005-06-21 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
High density magnetic RAM and array architecture using a one transistor, one diode, and one MTJ cell
|
JP2004288311A
(ja)
*
|
2003-03-24 |
2004-10-14 |
Toshiba Corp |
半導体記憶装置及びその制御方法
|
US7916435B1
(en)
|
2003-05-02 |
2011-03-29 |
Hitachi Global Storage Technologies Netherlands B.V. |
Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer
|
US7230804B2
(en)
*
|
2003-05-02 |
2007-06-12 |
Hitachi Global Storage Technologies Netherlands B.V. |
Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter
|
JP4142993B2
(ja)
*
|
2003-07-23 |
2008-09-03 |
株式会社東芝 |
磁気メモリ装置の製造方法
|
JP4534441B2
(ja)
*
|
2003-07-25 |
2010-09-01 |
Tdk株式会社 |
磁気記憶セル及びこれを用いた磁気メモリデバイス
|
US7536612B2
(en)
*
|
2003-08-29 |
2009-05-19 |
International Business Machines Corporation |
Field spike monitor for MRAM
|
US20050073878A1
(en)
*
|
2003-10-03 |
2005-04-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Multi-sensing level MRAM structure with different magnetoresistance ratios
|
US7611911B2
(en)
*
|
2003-10-08 |
2009-11-03 |
International Business Machines Corporation |
Method and system for patterning of magnetic thin films using gaseous transformation to transform a magnetic portion to a non-magnetic portion
|
US20060281258A1
(en)
*
|
2004-10-06 |
2006-12-14 |
Bernard Dieny |
Magnetic tunnel junction device and writing/reading method for said device
|
FR2860910B1
(fr)
*
|
2003-10-10 |
2006-02-10 |
Commissariat Energie Atomique |
Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif
|
US20050105328A1
(en)
*
|
2003-11-17 |
2005-05-19 |
Ho Chiahua |
Perpendicular MRAM with high magnetic transition and low programming current
|
US6925000B2
(en)
|
2003-12-12 |
2005-08-02 |
Maglabs, Inc. |
Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
|
US7102920B2
(en)
*
|
2004-03-23 |
2006-09-05 |
Hewlett-Packard Development Company, L.P. |
Soft-reference three conductor magnetic memory storage device
|
US7211446B2
(en)
*
|
2004-06-11 |
2007-05-01 |
International Business Machines Corporation |
Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
|
US7061037B2
(en)
*
|
2004-07-06 |
2006-06-13 |
Maglabs, Inc. |
Magnetic random access memory with multiple memory layers and improved memory cell selectivity
|
US7072208B2
(en)
*
|
2004-07-28 |
2006-07-04 |
Headway Technologies, Inc. |
Vortex magnetic random access memory
|
US7092284B2
(en)
*
|
2004-08-20 |
2006-08-15 |
Infineon Technologies Ag |
MRAM with magnetic via for storage of information and field sensor
|
US7075818B2
(en)
*
|
2004-08-23 |
2006-07-11 |
Maglabs, Inc. |
Magnetic random access memory with stacked memory layers having access lines for writing and reading
|
US7088611B2
(en)
*
|
2004-11-30 |
2006-08-08 |
Infineon Technologies Ag |
MRAM with switchable ferromagnetic offset layer
|
US7061797B1
(en)
*
|
2004-12-30 |
2006-06-13 |
Infineon Technologies Ag |
Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
|
JP4373938B2
(ja)
*
|
2005-02-17 |
2009-11-25 |
株式会社東芝 |
磁気ランダムアクセスメモリ
|
US7635903B2
(en)
*
|
2005-09-13 |
2009-12-22 |
Everspin Technologies, Inc. |
Oscillator and method of manufacture
|
JP2007081280A
(ja)
|
2005-09-16 |
2007-03-29 |
Fujitsu Ltd |
磁気抵抗効果素子及び磁気メモリ装置
|
JP4997789B2
(ja)
*
|
2006-02-23 |
2012-08-08 |
Tdk株式会社 |
磁気メモリ
|
US8363457B2
(en)
*
|
2006-02-25 |
2013-01-29 |
Avalanche Technology, Inc. |
Magnetic memory sensing circuit
|
US8535952B2
(en)
*
|
2006-02-25 |
2013-09-17 |
Avalanche Technology, Inc. |
Method for manufacturing non-volatile magnetic memory
|
US8018011B2
(en)
*
|
2007-02-12 |
2011-09-13 |
Avalanche Technology, Inc. |
Low cost multi-state magnetic memory
|
US8183652B2
(en)
*
|
2007-02-12 |
2012-05-22 |
Avalanche Technology, Inc. |
Non-volatile magnetic memory with low switching current and high thermal stability
|
US8508984B2
(en)
*
|
2006-02-25 |
2013-08-13 |
Avalanche Technology, Inc. |
Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
|
US20080246104A1
(en)
*
|
2007-02-12 |
2008-10-09 |
Yadav Technology |
High Capacity Low Cost Multi-State Magnetic Memory
|
US8063459B2
(en)
*
|
2007-02-12 |
2011-11-22 |
Avalanche Technologies, Inc. |
Non-volatile magnetic memory element with graded layer
|
US7732881B2
(en)
*
|
2006-11-01 |
2010-06-08 |
Avalanche Technology, Inc. |
Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
|
US8084835B2
(en)
*
|
2006-10-20 |
2011-12-27 |
Avalanche Technology, Inc. |
Non-uniform switching based non-volatile magnetic based memory
|
US20070253245A1
(en)
*
|
2006-04-27 |
2007-11-01 |
Yadav Technology |
High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
|
US8058696B2
(en)
*
|
2006-02-25 |
2011-11-15 |
Avalanche Technology, Inc. |
High capacity low cost multi-state magnetic memory
|
US8120949B2
(en)
*
|
2006-04-27 |
2012-02-21 |
Avalanche Technology, Inc. |
Low-cost non-volatile flash-RAM memory
|
US7508042B2
(en)
*
|
2006-12-22 |
2009-03-24 |
Magic Technologies, Inc. |
Spin transfer MRAM device with magnetic biasing
|
US8542524B2
(en)
*
|
2007-02-12 |
2013-09-24 |
Avalanche Technology, Inc. |
Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
|
US20090218645A1
(en)
*
|
2007-02-12 |
2009-09-03 |
Yadav Technology Inc. |
multi-state spin-torque transfer magnetic random access memory
|
US7869266B2
(en)
*
|
2007-10-31 |
2011-01-11 |
Avalanche Technology, Inc. |
Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
|
JP5495108B2
(ja)
|
2007-10-25 |
2014-05-21 |
富士電機株式会社 |
スピンバルブ素子及びその製造方法
|
US8004881B2
(en)
*
|
2007-12-19 |
2011-08-23 |
Qualcomm Incorporated |
Magnetic tunnel junction device with separate read and write paths
|
US7936596B2
(en)
*
|
2008-02-01 |
2011-05-03 |
Qualcomm Incorporated |
Magnetic tunnel junction cell including multiple magnetic domains
|
US8802451B2
(en)
|
2008-02-29 |
2014-08-12 |
Avalanche Technology Inc. |
Method for manufacturing high density non-volatile magnetic memory
|
US8634231B2
(en)
|
2009-08-24 |
2014-01-21 |
Qualcomm Incorporated |
Magnetic tunnel junction structure
|
US7579197B1
(en)
|
2008-03-04 |
2009-08-25 |
Qualcomm Incorporated |
Method of forming a magnetic tunnel junction structure
|
US7781231B2
(en)
|
2008-03-07 |
2010-08-24 |
Qualcomm Incorporated |
Method of forming a magnetic tunnel junction device
|
US7885105B2
(en)
*
|
2008-03-25 |
2011-02-08 |
Qualcomm Incorporated |
Magnetic tunnel junction cell including multiple vertical magnetic domains
|
US8659852B2
(en)
*
|
2008-04-21 |
2014-02-25 |
Seagate Technology Llc |
Write-once magentic junction memory array
|
US7855911B2
(en)
*
|
2008-05-23 |
2010-12-21 |
Seagate Technology Llc |
Reconfigurable magnetic logic device using spin torque
|
US7852663B2
(en)
*
|
2008-05-23 |
2010-12-14 |
Seagate Technology Llc |
Nonvolatile programmable logic gates and adders
|
US7881098B2
(en)
*
|
2008-08-26 |
2011-02-01 |
Seagate Technology Llc |
Memory with separate read and write paths
|
US7985994B2
(en)
*
|
2008-09-29 |
2011-07-26 |
Seagate Technology Llc |
Flux-closed STRAM with electronically reflective insulative spacer
|
US8169810B2
(en)
|
2008-10-08 |
2012-05-01 |
Seagate Technology Llc |
Magnetic memory with asymmetric energy barrier
|
US8089132B2
(en)
|
2008-10-09 |
2012-01-03 |
Seagate Technology Llc |
Magnetic memory with phonon glass electron crystal material
|
US8039913B2
(en)
*
|
2008-10-09 |
2011-10-18 |
Seagate Technology Llc |
Magnetic stack with laminated layer
|
US20100102405A1
(en)
*
|
2008-10-27 |
2010-04-29 |
Seagate Technology Llc |
St-ram employing a spin filter
|
US8045366B2
(en)
|
2008-11-05 |
2011-10-25 |
Seagate Technology Llc |
STRAM with composite free magnetic element
|
US8043732B2
(en)
|
2008-11-11 |
2011-10-25 |
Seagate Technology Llc |
Memory cell with radial barrier
|
US7826181B2
(en)
*
|
2008-11-12 |
2010-11-02 |
Seagate Technology Llc |
Magnetic memory with porous non-conductive current confinement layer
|
US8289756B2
(en)
|
2008-11-25 |
2012-10-16 |
Seagate Technology Llc |
Non volatile memory including stabilizing structures
|
US7826259B2
(en)
|
2009-01-29 |
2010-11-02 |
Seagate Technology Llc |
Staggered STRAM cell
|
US7999338B2
(en)
|
2009-07-13 |
2011-08-16 |
Seagate Technology Llc |
Magnetic stack having reference layers with orthogonal magnetization orientation directions
|
US9385308B2
(en)
*
|
2010-03-26 |
2016-07-05 |
Qualcomm Incorporated |
Perpendicular magnetic tunnel junction structure
|
US8625337B2
(en)
|
2010-05-06 |
2014-01-07 |
Qualcomm Incorporated |
Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements
|
DE102010055754A1
(de)
*
|
2010-12-22 |
2012-06-28 |
Sensitec Gmbh |
Magnetoresistives Sensorelement
|
US9236561B2
(en)
|
2011-09-12 |
2016-01-12 |
Samsung Electronics Co., Ltd. |
Method and system for providing multiple self-aligned logic cells in a single stack
|
US9548095B2
(en)
*
|
2014-08-20 |
2017-01-17 |
Everspin Technologies, Inc. |
Redundant magnetic tunnel junctions in magnetoresistive memory
|
US11386320B2
(en)
|
2019-03-06 |
2022-07-12 |
International Business Machines Corporation |
Magnetic domain wall-based non-volatile, linear and bi-directional synaptic weight element
|
US11222920B2
(en)
*
|
2020-02-04 |
2022-01-11 |
Western Digital Technologies, Inc. |
Magnetic device including multiferroic regions and methods of forming the same
|