DE69900953T2 - Halbleiterlaser aus einer Nitridverbindung - Google Patents

Halbleiterlaser aus einer Nitridverbindung

Info

Publication number
DE69900953T2
DE69900953T2 DE69900953T DE69900953T DE69900953T2 DE 69900953 T2 DE69900953 T2 DE 69900953T2 DE 69900953 T DE69900953 T DE 69900953T DE 69900953 T DE69900953 T DE 69900953T DE 69900953 T2 DE69900953 T2 DE 69900953T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
nitride compound
laser made
nitride
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69900953T
Other languages
English (en)
Other versions
DE69900953D1 (de
Inventor
Kunio Itoh
Masaaki Yuri
Tadao Hashimoto
Masahiro Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69900953D1 publication Critical patent/DE69900953D1/de
Publication of DE69900953T2 publication Critical patent/DE69900953T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
DE69900953T 1998-04-06 1999-04-06 Halbleiterlaser aus einer Nitridverbindung Expired - Lifetime DE69900953T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9308698 1998-04-06
JP13944398 1998-05-21
JP14899698 1998-05-29

Publications (2)

Publication Number Publication Date
DE69900953D1 DE69900953D1 (de) 2002-04-11
DE69900953T2 true DE69900953T2 (de) 2002-07-04

Family

ID=27307209

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69900953T Expired - Lifetime DE69900953T2 (de) 1998-04-06 1999-04-06 Halbleiterlaser aus einer Nitridverbindung

Country Status (5)

Country Link
US (1) US6249534B1 (de)
EP (1) EP0949731B1 (de)
JP (2) JP4598841B2 (de)
DE (1) DE69900953T2 (de)
TW (1) TW419872B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10323860A1 (de) * 2003-03-28 2004-11-11 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Herstellungsverfahren

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EP1164669B1 (de) * 1999-11-30 2007-01-17 Matsushita Electric Industrial Co., Ltd. Halbleiterlaser, verfahren zu dessen herstellung und optische plattenvorrichtung
US6798798B2 (en) * 2000-12-12 2004-09-28 The Furukawa Electric Co., Ltd. Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module
KR100387240B1 (ko) * 2001-05-22 2003-06-12 삼성전기주식회사 공기층을 포함하는 반사막을 이용한 레이저 다이오드 및그 제조 방법
AU2002328130B2 (en) * 2001-06-06 2008-05-29 Ammono Sp. Z O.O. Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US6822272B2 (en) * 2001-07-09 2004-11-23 Nichia Corporation Multilayered reflective membrane and gallium nitride-based light emitting element
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
KR100679387B1 (ko) * 2001-10-26 2007-02-05 암모노 에스피. 제트오. 오. 질화물 반도체 레이저 소자 및 이의 제조방법
CA2464083C (en) 2001-10-26 2011-08-02 Ammono Sp. Z O.O. Substrate for epitaxy
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
JP2003204110A (ja) * 2001-11-01 2003-07-18 Furukawa Electric Co Ltd:The 半導体レーザ装置およびこれを用いた半導体レーザモジュール
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
EP1514958B1 (de) * 2002-05-17 2014-05-14 Ammono S.A. Vorrichtung zur herstellung von volumeneinkristallen unter einsatz von überkritischem ammoniak
AU2002354467A1 (en) * 2002-05-17 2003-12-02 Ammono Sp.Zo.O. Light emitting element structure having nitride bulk single crystal layer
KR20050054482A (ko) * 2002-06-26 2005-06-10 암모노 에스피. 제트오. 오. 질화물 반도체 레이저 디바이스 및 그의 성능을향상시키기 위한 방법
WO2004003261A1 (en) * 2002-06-26 2004-01-08 Ammono Sp. Z O.O. Process for obtaining of bulk monocrystallline gallium-containing nitride
TWI334890B (en) * 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
EP1576210B1 (de) * 2002-12-11 2010-02-10 AMMONO Sp. z o.o. Substrat für epitaxie und verfahren zu seiner herstellung
TW200505063A (en) 2003-07-10 2005-02-01 Nichia Corp Nitride semiconductor laser element
WO2005121415A1 (en) * 2004-06-11 2005-12-22 Ammono Sp. Z O.O. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US20060140228A1 (en) * 2004-12-28 2006-06-29 Mcdonald Mark E Semi-integrated designs with in-waveguide mirrors for external cavity tunable lasers
JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法
JP2007103814A (ja) * 2005-10-07 2007-04-19 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
CN101499618B (zh) * 2006-03-06 2012-08-01 夏普株式会社 氮化物半导体发光器件
JP5430826B2 (ja) 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
GB2439973A (en) * 2006-07-13 2008-01-16 Sharp Kk Modifying the optical properties of a nitride optoelectronic device
JP4310352B2 (ja) * 2007-06-05 2009-08-05 シャープ株式会社 発光デバイスおよび発光デバイスの製造方法
JP5014967B2 (ja) * 2007-12-06 2012-08-29 シャープ株式会社 発光素子及び発光素子の製造方法
US20100314653A1 (en) * 2008-06-06 2010-12-16 Kenji Orita Semiconductor light-emitting element
KR100999695B1 (ko) * 2009-02-16 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2012109499A (ja) * 2010-11-19 2012-06-07 Sony Corp 半導体レーザ素子およびその製造方法
DE102017108435A1 (de) * 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode

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JPS61134094A (ja) * 1984-12-05 1986-06-21 Nec Corp 半導体レ−ザ
JPH01115191A (ja) * 1987-10-28 1989-05-08 Nec Corp 半導体レーザ及びその製造方法
JPH02137287A (ja) * 1988-11-17 1990-05-25 Sanyo Electric Co Ltd 半導体レーザ装置
JP2743106B2 (ja) 1990-01-12 1998-04-22 アルプス電気株式会社 半導体レーザ
JPH04208585A (ja) 1990-12-01 1992-07-30 Fujitsu Ltd 半導体発光素子
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JPH06268327A (ja) 1993-03-17 1994-09-22 Hitachi Ltd 半導体発光素子
JPH0745910A (ja) * 1993-07-30 1995-02-14 Ricoh Co Ltd 半導体レーザー
JP3523700B2 (ja) 1995-01-12 2004-04-26 日亜化学工業株式会社 窒化物半導体レーザ素子
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
KR100267839B1 (ko) 1995-11-06 2000-10-16 오가와 에이지 질화물 반도체 장치
JP2891348B2 (ja) 1995-11-24 1999-05-17 日亜化学工業株式会社 窒化物半導体レーザ素子
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10323860A1 (de) * 2003-03-28 2004-11-11 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Herstellungsverfahren

Also Published As

Publication number Publication date
EP0949731A2 (de) 1999-10-13
EP0949731B1 (de) 2002-03-06
EP0949731A3 (de) 2000-01-26
JP4598845B2 (ja) 2010-12-15
US6249534B1 (en) 2001-06-19
JP2008211234A (ja) 2008-09-11
TW419872B (en) 2001-01-21
DE69900953D1 (de) 2002-04-11
JP2008252138A (ja) 2008-10-16
JP4598841B2 (ja) 2010-12-15

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Legal Events

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8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP