DE69900953D1 - Halbleiterlaser aus einer Nitridverbindung - Google Patents

Halbleiterlaser aus einer Nitridverbindung

Info

Publication number
DE69900953D1
DE69900953D1 DE69900953T DE69900953T DE69900953D1 DE 69900953 D1 DE69900953 D1 DE 69900953D1 DE 69900953 T DE69900953 T DE 69900953T DE 69900953 T DE69900953 T DE 69900953T DE 69900953 D1 DE69900953 D1 DE 69900953D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
nitride compound
laser made
nitride
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69900953T
Other languages
English (en)
Other versions
DE69900953T2 (de
Inventor
Kunio Itoh
Masaaki Yuri
Tadao Hashimoto
Masahiro Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69900953D1 publication Critical patent/DE69900953D1/de
Application granted granted Critical
Publication of DE69900953T2 publication Critical patent/DE69900953T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
DE69900953T 1998-04-06 1999-04-06 Halbleiterlaser aus einer Nitridverbindung Expired - Lifetime DE69900953T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9308698 1998-04-06
JP13944398 1998-05-21
JP14899698 1998-05-29

Publications (2)

Publication Number Publication Date
DE69900953D1 true DE69900953D1 (de) 2002-04-11
DE69900953T2 DE69900953T2 (de) 2002-07-04

Family

ID=27307209

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69900953T Expired - Lifetime DE69900953T2 (de) 1998-04-06 1999-04-06 Halbleiterlaser aus einer Nitridverbindung

Country Status (5)

Country Link
US (1) US6249534B1 (de)
EP (1) EP0949731B1 (de)
JP (2) JP4598841B2 (de)
DE (1) DE69900953T2 (de)
TW (1) TW419872B (de)

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US6798798B2 (en) * 2000-12-12 2004-09-28 The Furukawa Electric Co., Ltd. Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module
KR100387240B1 (ko) * 2001-05-22 2003-06-12 삼성전기주식회사 공기층을 포함하는 반사막을 이용한 레이저 다이오드 및그 제조 방법
US7252712B2 (en) * 2001-06-06 2007-08-07 Ammono Sp. Z O.O. Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US6822272B2 (en) * 2001-07-09 2004-11-23 Nichia Corporation Multilayered reflective membrane and gallium nitride-based light emitting element
US7067849B2 (en) * 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
CA2464083C (en) 2001-10-26 2011-08-02 Ammono Sp. Z O.O. Substrate for epitaxy
US7057211B2 (en) * 2001-10-26 2006-06-06 Ammono Sp. Zo.O Nitride semiconductor laser device and manufacturing method thereof
JP2003204110A (ja) * 2001-11-01 2003-07-18 Furukawa Electric Co Ltd:The 半導体レーザ装置およびこれを用いた半導体レーザモジュール
WO2003098757A1 (fr) * 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Structure d'element electroluminescent comprenant une couche de monocristaux de nitrure en vrac
US7335262B2 (en) * 2002-05-17 2008-02-26 Ammono Sp. Z O.O. Apparatus for obtaining a bulk single crystal using supercritical ammonia
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
EP1520329A2 (de) * 2002-06-26 2005-04-06 AMMONO Sp.z o.o. Nitrid halbleiterlaservorrichtung und verfahren zur leistungsverbesserung
PL225422B1 (pl) * 2002-06-26 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowych monokryształów azotku zawierającego gal
EP1590509B1 (de) * 2002-12-11 2014-02-12 Ammono S.A. Verfahren zur herstellung von massiven einkristallen aus gallium enthaltendem nitrid
DE60329713D1 (de) * 2002-12-11 2009-11-26 Ammono Sp Zoo Schabloneartiges substrat und verfahren zu seiner herstellung
DE10323860A1 (de) * 2003-03-28 2004-11-11 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Herstellungsverfahren
TW200505063A (en) * 2003-07-10 2005-02-01 Nichia Corp Nitride semiconductor laser element
JP5014804B2 (ja) * 2004-06-11 2012-08-29 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン バルク単結晶ガリウム含有窒化物およびその用途
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US20060140228A1 (en) * 2004-12-28 2006-06-29 Mcdonald Mark E Semi-integrated designs with in-waveguide mirrors for external cavity tunable lasers
JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法
JP2007103814A (ja) * 2005-10-07 2007-04-19 Sharp Corp 窒化物半導体発光素子およびその製造方法
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
CN101499619B (zh) * 2006-03-06 2012-07-18 夏普株式会社 氮化物半导体发光器件
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
GB2439973A (en) * 2006-07-13 2008-01-16 Sharp Kk Modifying the optical properties of a nitride optoelectronic device
JP4310352B2 (ja) * 2007-06-05 2009-08-05 シャープ株式会社 発光デバイスおよび発光デバイスの製造方法
JP5014967B2 (ja) * 2007-12-06 2012-08-29 シャープ株式会社 発光素子及び発光素子の製造方法
JPWO2009147853A1 (ja) * 2008-06-06 2011-10-27 パナソニック株式会社 半導体発光素子
KR100999695B1 (ko) * 2009-02-16 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2012109499A (ja) * 2010-11-19 2012-06-07 Sony Corp 半導体レーザ素子およびその製造方法
DE102017108435A1 (de) * 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode

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JPS599989A (ja) * 1982-07-07 1984-01-19 Matsushita Electric Ind Co Ltd 光半導体素子
JPS61134094A (ja) * 1984-12-05 1986-06-21 Nec Corp 半導体レ−ザ
JPH01115191A (ja) * 1987-10-28 1989-05-08 Nec Corp 半導体レーザ及びその製造方法
JPH02137287A (ja) * 1988-11-17 1990-05-25 Sanyo Electric Co Ltd 半導体レーザ装置
JP2743106B2 (ja) 1990-01-12 1998-04-22 アルプス電気株式会社 半導体レーザ
JPH04208585A (ja) 1990-12-01 1992-07-30 Fujitsu Ltd 半導体発光素子
US5146465A (en) 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
JPH06268327A (ja) 1993-03-17 1994-09-22 Hitachi Ltd 半導体発光素子
JPH0745910A (ja) * 1993-07-30 1995-02-14 Ricoh Co Ltd 半導体レーザー
JP3523700B2 (ja) 1995-01-12 2004-04-26 日亜化学工業株式会社 窒化物半導体レーザ素子
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
CN100350641C (zh) 1995-11-06 2007-11-21 日亚化学工业株式会社 氮化物半导体器件
JP2891348B2 (ja) 1995-11-24 1999-05-17 日亜化学工業株式会社 窒化物半導体レーザ素子
US5799028A (en) * 1996-07-18 1998-08-25 Sdl, Inc. Passivation and protection of a semiconductor surface

Also Published As

Publication number Publication date
TW419872B (en) 2001-01-21
JP2008211234A (ja) 2008-09-11
EP0949731A3 (de) 2000-01-26
US6249534B1 (en) 2001-06-19
JP2008252138A (ja) 2008-10-16
JP4598841B2 (ja) 2010-12-15
JP4598845B2 (ja) 2010-12-15
DE69900953T2 (de) 2002-07-04
EP0949731B1 (de) 2002-03-06
EP0949731A2 (de) 1999-10-13

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Legal Events

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8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP