DE69842158D1 - Verfahren zur Herstellung einer epitaktischen Schicht aus Gallium Nitrid - Google Patents

Verfahren zur Herstellung einer epitaktischen Schicht aus Gallium Nitrid

Info

Publication number
DE69842158D1
DE69842158D1 DE69842158T DE69842158T DE69842158D1 DE 69842158 D1 DE69842158 D1 DE 69842158D1 DE 69842158 T DE69842158 T DE 69842158T DE 69842158 T DE69842158 T DE 69842158T DE 69842158 D1 DE69842158 D1 DE 69842158D1
Authority
DE
Germany
Prior art keywords
gallium nitride
nitride layer
producing
epitaxial layer
epitaxial gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69842158T
Other languages
English (en)
Inventor
Soufien Haffouz
Pierre Gibart
Bernard Guillaume
Gilles Nataf
Michel Vaille
Bernard Beaumont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luxium Solutions SAS
Original Assignee
Saint Gobain Cristaux and Detecteurs SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Cristaux and Detecteurs SAS filed Critical Saint Gobain Cristaux and Detecteurs SAS
Application granted granted Critical
Publication of DE69842158D1 publication Critical patent/DE69842158D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
DE69842158T 1997-10-20 1998-10-15 Verfahren zur Herstellung einer epitaktischen Schicht aus Gallium Nitrid Expired - Lifetime DE69842158D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9713096A FR2769924B1 (fr) 1997-10-20 1997-10-20 Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche

Publications (1)

Publication Number Publication Date
DE69842158D1 true DE69842158D1 (de) 2011-04-14

Family

ID=9512414

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69842158T Expired - Lifetime DE69842158D1 (de) 1997-10-20 1998-10-15 Verfahren zur Herstellung einer epitaktischen Schicht aus Gallium Nitrid
DE69831419T Expired - Lifetime DE69831419T2 (de) 1997-10-20 1998-10-15 Epitaktische galliumnitridschicht

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69831419T Expired - Lifetime DE69831419T2 (de) 1997-10-20 1998-10-15 Epitaktische galliumnitridschicht

Country Status (14)

Country Link
US (2) US6325850B1 (de)
EP (2) EP1034325B9 (de)
JP (1) JP4282896B2 (de)
KR (1) KR100626625B1 (de)
CN (2) CN1329954C (de)
AT (2) ATE500358T1 (de)
AU (1) AU9632498A (de)
DE (2) DE69842158D1 (de)
ES (1) ES2369467T3 (de)
FR (1) FR2769924B1 (de)
HK (1) HK1075131A1 (de)
PT (1) PT1338683E (de)
SG (1) SG103342A1 (de)
WO (1) WO1999020816A1 (de)

Families Citing this family (134)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6844574B1 (en) * 1999-03-12 2005-01-18 Sumitomo Chemical Company, Limited III-V compound semiconductor
JP3786544B2 (ja) * 1999-06-10 2006-06-14 パイオニア株式会社 窒化物半導体素子の製造方法及びかかる方法により製造された素子
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
US6821805B1 (en) * 1999-10-06 2004-11-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device, semiconductor substrate, and manufacture method
JP3438674B2 (ja) * 1999-10-21 2003-08-18 松下電器産業株式会社 窒化物半導体素子の製造方法
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6475882B1 (en) * 1999-12-20 2002-11-05 Nitride Semiconductors Co., Ltd. Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
KR100471096B1 (ko) * 2004-04-26 2005-03-14 (주)에피플러스 금속 아일랜드를 이용한 반도체 에피택시층 제조방법
JP4576674B2 (ja) * 2000-06-26 2010-11-10 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6841808B2 (en) * 2000-06-23 2005-01-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for producing the same
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
JP3790677B2 (ja) * 2001-03-19 2006-06-28 株式会社東芝 半導体発光装置及びその製造方法
JP3714188B2 (ja) * 2001-04-19 2005-11-09 ソニー株式会社 窒化物半導体の気相成長方法及び窒化物半導体素子
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US20030047746A1 (en) * 2001-09-10 2003-03-13 Fuji Photo Film Co., Ltd. GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elements
US6963086B2 (en) * 2001-10-10 2005-11-08 Sony Corporation Semiconductor light-emitting device image display illuminator and its manufacturing method
TW561526B (en) * 2001-12-21 2003-11-11 Aixtron Ag Method for depositing III-V semiconductor layers on a non-III-V substrate
JP3912117B2 (ja) * 2002-01-17 2007-05-09 ソニー株式会社 結晶成長方法、半導体発光素子及びその製造方法
US20030198301A1 (en) * 2002-01-30 2003-10-23 Kazutaka Terashima Method of epitaxial lateral overgrowth
KR100427689B1 (ko) * 2002-02-21 2004-04-28 엘지전자 주식회사 질화물 반도체 기판의 제조방법
US6890785B2 (en) * 2002-02-27 2005-05-10 Sony Corporation Nitride semiconductor, semiconductor device, and manufacturing methods for the same
EP2261988B1 (de) 2002-04-30 2016-03-30 Cree, Inc. Hochspannungsschaltungsvorrichtung und Herstellungsverfahren dafür
FR2840452B1 (fr) * 2002-05-28 2005-10-14 Lumilog Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat
TWI271877B (en) * 2002-06-04 2007-01-21 Nitride Semiconductors Co Ltd Gallium nitride compound semiconductor device and manufacturing method
FR2842832B1 (fr) * 2002-07-24 2006-01-20 Lumilog Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut
JP3791517B2 (ja) * 2002-10-31 2006-06-28 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2004336040A (ja) * 2003-04-30 2004-11-25 Osram Opto Semiconductors Gmbh 複数の半導体チップの製造方法および電子半導体基体
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
US7052942B1 (en) * 2003-09-19 2006-05-30 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
US7445673B2 (en) * 2004-05-18 2008-11-04 Lumilog Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
KR100682873B1 (ko) * 2004-12-28 2007-02-15 삼성전기주식회사 반도체 발광 소자 및 그 제조 방법
US7432161B2 (en) * 2005-01-07 2008-10-07 Stc.Unm Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
JP4963816B2 (ja) * 2005-04-21 2012-06-27 シャープ株式会社 窒化物系半導体素子の製造方法および発光素子
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
DE102005041643A1 (de) * 2005-08-29 2007-03-01 Forschungsverbund Berlin E.V. Halbleitersubstrat sowie Verfahren und Maskenschicht zur Herstellung eines freistehenden Halbleitersubstrats mittels der Hydrid-Gasphasenepitaxie
US20070086916A1 (en) * 2005-10-14 2007-04-19 General Electric Company Faceted structure, article, sensor device, and method
US8425858B2 (en) * 2005-10-14 2013-04-23 Morpho Detection, Inc. Detection apparatus and associated method
TWI519686B (zh) * 2005-12-15 2016-02-01 聖戈班晶體探測器公司 低差排密度氮化鎵（ＧａＮ）之生長方法
PL1801855T3 (pl) * 2005-12-22 2009-06-30 Freiberger Compound Mat Gmbh Proces selektywnego maskowania warstw III-N i przygotowywania wolnostojących warstw III-N lub urządzeń
US20120161287A1 (en) * 2006-01-20 2012-06-28 Japan Science And Technology Agency METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
DE602007011917D1 (de) * 2006-05-08 2011-02-24 Freiberger Compound Mat Gmbh Verfahren zur herstellung eines iii-n-volumenkristalls und eines freistehenden iii-n-substrats und iii-n-volumenkristall und freistehendes iii-n-substrat
WO2007133603A2 (en) 2006-05-09 2007-11-22 The Regents Of The University Of California In-situ defect reduction techniques for nonpolar and semipolar (ai, ga, in)n
JP2007335484A (ja) * 2006-06-13 2007-12-27 Mitsubishi Cable Ind Ltd 窒化物半導体ウェハ
EP2062290B1 (de) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defektreduzierung durch kontrolle des aspektverhältnisses
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US7776152B2 (en) * 2006-11-01 2010-08-17 Raytheon Company Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
ATE546568T1 (de) * 2006-12-08 2012-03-15 Saint Gobain Cristaux & Detecteurs Verfahren zur herstellung eines nitrid- einkristalls durch epitaktisches aufwachsen auf ein substrat unter verhinderung von wachstum an den substraträndern
US7825432B2 (en) 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
KR101374090B1 (ko) * 2007-07-26 2014-03-17 아리조나 보드 오브 리젠츠 퍼 앤 온 비하프 오브 아리조나 스테이트 유니버시티 에피택시 방법들과 그 방법들에 의하여 성장된 템플릿들
CN101730926B (zh) * 2007-07-26 2012-09-19 硅绝缘体技术有限公司 改进的外延材料的制造方法
JP2010538495A (ja) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
CN101452976B (zh) * 2007-12-06 2011-03-30 泰谷光电科技股份有限公司 高亮度发光二极管结构
CN101302648B (zh) * 2008-01-28 2010-06-16 中国电子科技集团公司第五十五研究所 氮化镓薄膜外延生长结构及方法
JP2009286652A (ja) * 2008-05-28 2009-12-10 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物結晶基板および半導体デバイスの製造方法
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
CN101325235B (zh) * 2008-07-10 2010-06-09 中山大学 一种用于led的硅基氮化镓外延层转移方法
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
WO2010033813A2 (en) * 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
WO2010072273A1 (en) 2008-12-24 2010-07-01 Saint-Gobain Cristaux & Detecteurs Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof
US20100187568A1 (en) * 2009-01-28 2010-07-29 S.O.I.Tec Silicon On Insulator Technologies, S.A. Epitaxial methods and structures for forming semiconductor materials
EP2415083B1 (de) 2009-04-02 2017-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Aus einer nicht polaren ebene eines kristallinen materials geformte vorrichtungen und verfahren zu ihrer herstellung
TW201138149A (en) * 2009-08-21 2011-11-01 Univ California Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
DE102009047881B4 (de) 2009-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur
JP6284290B2 (ja) * 2010-02-19 2018-02-28 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 窒化物半導体層の成長方法、及びそれにより形成される窒化物半導体基板
DE102010048617A1 (de) 2010-10-15 2012-04-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterschichtenfolge, strahlungsemittierender Halbleiterchip und optoelektronisches Bauteil
FR2968678B1 (fr) * 2010-12-08 2015-11-20 Soitec Silicon On Insulator Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
JP5813448B2 (ja) * 2011-10-07 2015-11-17 シャープ株式会社 窒化物半導体素子の製造方法
US8778788B2 (en) 2011-10-11 2014-07-15 Avogy, Inc. Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
US8749015B2 (en) 2011-11-17 2014-06-10 Avogy, Inc. Method and system for fabricating floating guard rings in GaN materials
US9224828B2 (en) 2011-10-11 2015-12-29 Avogy, Inc. Method and system for floating guard rings in gallium nitride materials
CN102593284B (zh) * 2012-03-05 2014-06-18 映瑞光电科技(上海)有限公司 隔离深沟槽及其高压led芯片的制造方法
CN104364879B (zh) * 2012-03-21 2017-06-06 弗赖贝格化合物原料有限公司 用于制备iii‑n模板及其继续加工的方法和iii‑n模板
GB2500670A (en) 2012-03-29 2013-10-02 Ibm Method of fabrication of a micro-optics device with curved surface defects
GB2500668A (en) * 2012-03-29 2013-10-02 Ibm Vertical Microcavity with Curved Surface Defects
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9129802B2 (en) 2012-08-27 2015-09-08 Rf Micro Devices, Inc. Lateral semiconductor device with vertical breakdown region
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
CN103840037B (zh) * 2012-11-21 2017-04-12 中山市云创知识产权服务有限公司 发光二极管制造方法
FR3001331A1 (fr) 2013-01-24 2014-07-25 Centre Nat Rech Scient Procede de fabrication d'une couche a base de nitrure d'element iii par decollement spontane
FR3011385A1 (fr) * 2013-09-27 2015-04-03 St Microelectronics Tours Sas Diode schottky en nitrure de gallium avec anneau de garde
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
KR102248478B1 (ko) * 2014-09-18 2021-05-06 인텔 코포레이션 실리콘 cmos-호환가능 반도체 디바이스들에서의 결함 전파 제어를 위한 경사 측벽 패싯들을 가지는 우르자이트 이종에피택셜 구조체들
US10229991B2 (en) 2014-09-25 2019-03-12 Intel Corporation III-N epitaxial device structures on free standing silicon mesas
KR102333752B1 (ko) 2014-11-18 2021-12-01 인텔 코포레이션 n-채널 및 p-채널 갈륨 질화물 트랜지스터들을 사용하는 CMOS 회로들
FR3029942B1 (fr) 2014-12-11 2020-12-25 Saint Gobain Lumilog Procede de fabrication de plaquettes de nitrure d'element 13 a angle de troncature non nul
EP3235005A4 (de) 2014-12-18 2018-09-12 Intel Corporation N-kanal-galliumnitrid-transistoren
FR3031834B1 (fr) * 2015-01-21 2018-10-05 Centre National De La Recherche Scientifique (Cnrs) Fabrication d'un support semi-conducteur a base de nitrures d'elements iii
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
DE102015107661B4 (de) * 2015-05-15 2021-03-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Nitridverbindungshalbleiter-Bauelements
KR102346591B1 (ko) 2015-05-19 2022-01-04 인텔 코포레이션 융기된 도핑 결정성 구조체들을 가진 반도체 디바이스들
DE102015109761B4 (de) * 2015-06-18 2022-01-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Nitrid-Halbleiterbauelements und Nitrid-Halbleiterbauelement
EP3314659A4 (de) 2015-06-26 2019-01-23 INTEL Corporation Heteroepitaxiestrukturen mit hochtemperaturbeständigem substratzwischenmaterial
US10658471B2 (en) 2015-12-24 2020-05-19 Intel Corporation Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layers
FR3048547B1 (fr) 2016-03-04 2018-11-09 Saint-Gobain Lumilog Procede de fabrication d'un substrat semi-conducteur
FR3054734B1 (fr) * 2016-07-27 2018-09-07 Universite Paris Sud Diode laser a retroaction repartie
US20200194615A1 (en) * 2017-05-05 2020-06-18 The Regents Of The University Of California Method of removing a substrate
US11233053B2 (en) 2017-09-29 2022-01-25 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
CN107768235B (zh) * 2017-10-25 2019-11-22 中国工程物理研究院电子工程研究所 一种基于二硫化钼-石墨烯复合缓冲层的氮化镓外延结构的制备方法
KR200487149Y1 (ko) 2018-04-23 2018-08-10 김대호 부채식 밸브 개폐 표시기 및 그를 구비하는 밸브 조립체
FR3091008B1 (fr) 2018-12-21 2023-03-31 Saint Gobain Lumilog Substrat semi-conducteur avec couche intermédiaire dopée n
FR3091020B1 (fr) 2018-12-21 2023-02-10 Saint Gobain Lumilog SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n
WO2020180785A1 (en) * 2019-03-01 2020-09-10 The Regents Of The University Of California Method for flattening a surface on an epitaxial lateral growth layer
FR3102776A1 (fr) 2019-11-05 2021-05-07 Saint-Gobain Lumilog Plaquette de nitrure d’élément 13 de variation d’angle de troncature réduite
FR3112238A1 (fr) 2020-07-06 2022-01-07 Saint-Gobain Lumilog Substrat semi-conducteur avec couche d’interface nitruree
CN112820633B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 氮化镓层及其同质外延生长方法
CN114242859B (zh) * 2021-11-30 2023-05-02 福建兆元光电有限公司 一种Micro LED外延片制备方法
CN115425091B (zh) * 2022-10-09 2023-10-10 弘大芯源(深圳)半导体有限公司 一种半导体器件薄膜结构及制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0191505A3 (de) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Verfahren zur Herstellung von Blättern aus kristallinem Material
EP0284437A3 (de) * 1987-03-26 1989-03-15 Canon Kabushiki Kaisha Kristalliner Gegenstand aus III-V-Gruppe-Verbindung und Verfahren zu seiner Herstellung
EP0366276A3 (de) * 1988-10-02 1990-05-16 Canon Kabushiki Kaisha Verfahren zur Herstellung eines Kristalls
US4971928A (en) * 1990-01-16 1990-11-20 General Motors Corporation Method of making a light emitting semiconductor having a rear reflecting surface
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
EP0952617B1 (de) * 1993-04-28 2004-07-28 Nichia Corporation Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
EP0711853B1 (de) * 1994-04-08 1999-09-08 Japan Energy Corporation Verfahren zum züchten von galliumnitridhalbleiterkristallen und vorrichtung
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
JP2830814B2 (ja) * 1996-01-19 1998-12-02 日本電気株式会社 窒化ガリウム系化合物半導体の結晶成長方法、及び半導体レーザの製造方法
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
JP3164016B2 (ja) * 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
JP4390090B2 (ja) * 1998-05-18 2009-12-24 シャープ株式会社 ＧａＮ系結晶膜の製造方法
US6610144B2 (en) * 2000-07-21 2003-08-26 The Regents Of The University Of California Method to reduce the dislocation density in group III-nitride films

Also Published As

Publication number Publication date
CN1279733A (zh) 2001-01-10
KR20010031225A (ko) 2001-04-16
FR2769924B1 (fr) 2000-03-10
JP2001520169A (ja) 2001-10-30
US20020152952A1 (en) 2002-10-24
PT1338683E (pt) 2011-07-04
JP4282896B2 (ja) 2009-06-24
CN1267587C (zh) 2006-08-02
DE69831419D1 (de) 2005-10-06
AU9632498A (en) 1999-05-10
EP1338683B1 (de) 2011-03-02
EP1338683A2 (de) 2003-08-27
EP1338683A3 (de) 2008-05-28
ATE303462T1 (de) 2005-09-15
WO1999020816A1 (fr) 1999-04-29
HK1075131A1 (en) 2005-12-02
FR2769924A1 (fr) 1999-04-23
SG103342A1 (en) 2004-04-29
US6802902B2 (en) 2004-10-12
DE69831419T2 (de) 2006-06-08
ES2369467T3 (es) 2011-12-01
ATE500358T1 (de) 2011-03-15
EP1034325A1 (de) 2000-09-13
KR100626625B1 (ko) 2006-09-22
US6325850B1 (en) 2001-12-04
EP1034325B1 (de) 2005-08-31
CN1607641A (zh) 2005-04-20
CN1329954C (zh) 2007-08-01
EP1034325B9 (de) 2006-01-04

Similar Documents

Publication Publication Date Title
DE69842158D1 (de) Verfahren zur Herstellung einer epitaktischen Schicht aus Gallium Nitrid
ATE525499T1 (de) Verfahren zur herstellung eines films aus galliumnitrid mit niedriger fehlerdichte durch dampfphaseepitaxie
US8227322B2 (en) Methods of growing nitride-based film using varying pulses
ATE414189T1 (de) Verfahren zur herstellung von selbsttragenden substraten, die iii-nitride umfassen, mittels heteroepitaxie auf einer opferschicht
WO2004073045A3 (en) Epitaxial growth of a zirconium diboride layer on silicon substrates
WO2003100839A3 (fr) Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat
US20060234486A1 (en) Wafer separation technique for the fabrication of free-standing (Al,In,Ga)N wafers
EP1265272A4 (de) Halbleiter mit nitridzusammensetzung der gruppe iii und verfahren zu seiner herstellung
TW428331B (en) Gallium nitride single crystal substrate and method of producing the same
EP1111663A3 (de) Galliumnitrid-Verbindungshalbleiterbauelement und Herstellungsverfahren
KR20030007896A (ko) 갈륨 나이트라이드층 형성방법
EP1479795A4 (de) Verfahren zur herstellung eines gruppe-iii-nitrid-verbindungshalbleiters
WO2007091920A3 (en) A method of growing semiconductor heterostructures based on gallium nitride
EP2472567A3 (de) Halbleiterschicht
EP1061564A3 (de) MBE-Wachstum von Gruppe III-Nitrid-Halbleiterschichten
CA1268846C (en) SEMICONDUCTOR LASER WITH MESA STRUCTURE
MY112348A (en) Iii-v/ii-vi semiconductor interface fabrication method
JPH10233385A (ja) 窒化物半導体のエッチング方法
TW334644B (en) Component using nitrogen-containing semiconductor material
WO2004019390A3 (en) Mbe growth of an algan layer or algan multilayer structure
US20050132950A1 (en) Method of growing aluminum-containing nitride semiconductor single crystal
KR20040036381A (ko) 질화갈륨 기판 제조방법
JP2508456B2 (ja) 半導体単結晶薄膜の形成方法
KR940001498A (ko) 반도체 레이저 다이오드의 제조방법
KR950012887A (ko) 반도체 레이저 다이오드의 제조방법