DE69835793D1 - Dünnschichttransistor mit lichtabschirmendem Film für Flüssigkristallvorrichtungen und Verfahren zu seiner Herstellung - Google Patents

Dünnschichttransistor mit lichtabschirmendem Film für Flüssigkristallvorrichtungen und Verfahren zu seiner Herstellung

Info

Publication number
DE69835793D1
DE69835793D1 DE69835793T DE69835793T DE69835793D1 DE 69835793 D1 DE69835793 D1 DE 69835793D1 DE 69835793 T DE69835793 T DE 69835793T DE 69835793 T DE69835793 T DE 69835793T DE 69835793 D1 DE69835793 D1 DE 69835793D1
Authority
DE
Germany
Prior art keywords
thin
production
light
liquid crystal
crystal devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69835793T
Other languages
English (en)
Other versions
DE69835793T2 (de
Inventor
Shinichi Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC LCD Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC LCD Technologies Ltd filed Critical NEC LCD Technologies Ltd
Publication of DE69835793D1 publication Critical patent/DE69835793D1/de
Application granted granted Critical
Publication of DE69835793T2 publication Critical patent/DE69835793T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
DE69835793T 1997-11-05 1998-10-26 Halbleitervorrichtung und Verfahren zum Herstellen derselben Expired - Lifetime DE69835793T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9302579A JP3022443B2 (ja) 1997-11-05 1997-11-05 半導体デバイスおよびその製造方法
JP30257997 1997-11-05

Publications (2)

Publication Number Publication Date
DE69835793D1 true DE69835793D1 (de) 2006-10-19
DE69835793T2 DE69835793T2 (de) 2007-09-13

Family

ID=17910686

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69835793T Expired - Lifetime DE69835793T2 (de) 1997-11-05 1998-10-26 Halbleitervorrichtung und Verfahren zum Herstellen derselben

Country Status (6)

Country Link
US (1) US6262436B1 (de)
EP (1) EP0915365B1 (de)
JP (1) JP3022443B2 (de)
KR (1) KR100323367B1 (de)
DE (1) DE69835793T2 (de)
TW (1) TW445394B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4963158B2 (ja) * 2000-01-25 2012-06-27 株式会社半導体エネルギー研究所 表示装置の作製方法、電気光学装置の作製方法
JP2003177682A (ja) * 2001-09-05 2003-06-27 Konica Corp ディスプレイパネルおよびその製造方法
KR100491143B1 (ko) * 2001-12-26 2005-05-24 삼성에스디아이 주식회사 블랙매트릭스를 구비한 평판표시장치 및 그 제조방법
EP1369230A1 (de) * 2002-06-05 2003-12-10 Kba-Giori S.A. Verfahren zur Herstellung einer gravierten Platt
JP4442245B2 (ja) * 2004-02-13 2010-03-31 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4754876B2 (ja) * 2004-06-25 2011-08-24 株式会社半導体エネルギー研究所 表示装置及びその作製方法
US20060125734A1 (en) * 2004-12-09 2006-06-15 Eastman Kodak Company OLED display with aging compensation
JP2006330021A (ja) * 2005-05-23 2006-12-07 Mitsubishi Electric Corp 液晶表示装置
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101147107B1 (ko) 2005-12-29 2012-05-17 엘지디스플레이 주식회사 유기 박막트랜지스터의 제조방법
DE102006055067B4 (de) 2005-12-29 2017-04-20 Lg Display Co., Ltd. Organische Dünnfilmtransistoren und Verfahren zu deren Herstellung
JP2008047893A (ja) * 2006-08-11 2008-02-28 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
KR102567713B1 (ko) 2016-03-24 2023-08-17 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
US10217848B2 (en) 2016-04-28 2019-02-26 Wuhan China Star Optoelectronics Technology Co., Ltd. Thin film transistor structure and manufacturing method of the same
CN105826395A (zh) * 2016-04-28 2016-08-03 武汉华星光电技术有限公司 薄膜晶体管结构及其制作方法
KR102424445B1 (ko) 2016-05-03 2022-07-22 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR102567716B1 (ko) 2016-06-01 2023-08-17 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US10925663B2 (en) 2016-06-27 2021-02-23 Mound Laser & Photonics Center, Inc. Metallized components and surgical instruments
US10625083B2 (en) * 2016-06-27 2020-04-21 Hutchinson Technology Incorporated Metallized components and surgical instruments
KR102643111B1 (ko) 2016-07-05 2024-03-04 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61138285A (ja) * 1984-12-10 1986-06-25 ホシデン株式会社 液晶表示素子
CA1313563C (en) * 1988-10-26 1993-02-09 Makoto Sasaki Thin film transistor panel
JPH03209435A (ja) * 1990-01-12 1991-09-12 Seiko Instr Inc アクティブマトリックス型電気光学装置
JPH0490514A (ja) * 1990-08-02 1992-03-24 Semiconductor Energy Lab Co Ltd 半導体装置
JP2780681B2 (ja) * 1995-08-11 1998-07-30 日本電気株式会社 アクティブマトリクス液晶表示パネル及びその製造方法
KR100225097B1 (ko) * 1996-10-29 1999-10-15 구자홍 액정표시장치 및 그 제조방법

Also Published As

Publication number Publication date
EP0915365B1 (de) 2006-09-06
JPH11145478A (ja) 1999-05-28
EP0915365A3 (de) 2001-10-17
JP3022443B2 (ja) 2000-03-21
US6262436B1 (en) 2001-07-17
EP0915365A2 (de) 1999-05-12
DE69835793T2 (de) 2007-09-13
KR19990045054A (ko) 1999-06-25
TW445394B (en) 2001-07-11
KR100323367B1 (ko) 2002-09-17

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