DE69835793D1 - Dünnschichttransistor mit lichtabschirmendem Film für Flüssigkristallvorrichtungen und Verfahren zu seiner Herstellung - Google Patents
Dünnschichttransistor mit lichtabschirmendem Film für Flüssigkristallvorrichtungen und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69835793D1 DE69835793D1 DE69835793T DE69835793T DE69835793D1 DE 69835793 D1 DE69835793 D1 DE 69835793D1 DE 69835793 T DE69835793 T DE 69835793T DE 69835793 T DE69835793 T DE 69835793T DE 69835793 D1 DE69835793 D1 DE 69835793D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- production
- light
- liquid crystal
- crystal devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 title 1
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9302579A JP3022443B2 (ja) | 1997-11-05 | 1997-11-05 | 半導体デバイスおよびその製造方法 |
JP30257997 | 1997-11-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69835793D1 true DE69835793D1 (de) | 2006-10-19 |
DE69835793T2 DE69835793T2 (de) | 2007-09-13 |
Family
ID=17910686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69835793T Expired - Lifetime DE69835793T2 (de) | 1997-11-05 | 1998-10-26 | Halbleitervorrichtung und Verfahren zum Herstellen derselben |
Country Status (6)
Country | Link |
---|---|
US (1) | US6262436B1 (de) |
EP (1) | EP0915365B1 (de) |
JP (1) | JP3022443B2 (de) |
KR (1) | KR100323367B1 (de) |
DE (1) | DE69835793T2 (de) |
TW (1) | TW445394B (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4963158B2 (ja) * | 2000-01-25 | 2012-06-27 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法、電気光学装置の作製方法 |
JP2003177682A (ja) * | 2001-09-05 | 2003-06-27 | Konica Corp | ディスプレイパネルおよびその製造方法 |
KR100491143B1 (ko) * | 2001-12-26 | 2005-05-24 | 삼성에스디아이 주식회사 | 블랙매트릭스를 구비한 평판표시장치 및 그 제조방법 |
EP1369230A1 (de) * | 2002-06-05 | 2003-12-10 | Kba-Giori S.A. | Verfahren zur Herstellung einer gravierten Platt |
JP4442245B2 (ja) * | 2004-02-13 | 2010-03-31 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP4754876B2 (ja) * | 2004-06-25 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
US20060125734A1 (en) * | 2004-12-09 | 2006-06-15 | Eastman Kodak Company | OLED display with aging compensation |
JP2006330021A (ja) * | 2005-05-23 | 2006-12-07 | Mitsubishi Electric Corp | 液晶表示装置 |
JP5037808B2 (ja) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101147107B1 (ko) | 2005-12-29 | 2012-05-17 | 엘지디스플레이 주식회사 | 유기 박막트랜지스터의 제조방법 |
DE102006055067B4 (de) | 2005-12-29 | 2017-04-20 | Lg Display Co., Ltd. | Organische Dünnfilmtransistoren und Verfahren zu deren Herstellung |
JP2008047893A (ja) * | 2006-08-11 | 2008-02-28 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板及びその製造方法 |
KR102567713B1 (ko) | 2016-03-24 | 2023-08-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
US10217848B2 (en) | 2016-04-28 | 2019-02-26 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Thin film transistor structure and manufacturing method of the same |
CN105826395A (zh) * | 2016-04-28 | 2016-08-03 | 武汉华星光电技术有限公司 | 薄膜晶体管结构及其制作方法 |
KR102424445B1 (ko) | 2016-05-03 | 2022-07-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR102567716B1 (ko) | 2016-06-01 | 2023-08-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
US10925663B2 (en) | 2016-06-27 | 2021-02-23 | Mound Laser & Photonics Center, Inc. | Metallized components and surgical instruments |
US10625083B2 (en) * | 2016-06-27 | 2020-04-21 | Hutchinson Technology Incorporated | Metallized components and surgical instruments |
KR102643111B1 (ko) | 2016-07-05 | 2024-03-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61138285A (ja) * | 1984-12-10 | 1986-06-25 | ホシデン株式会社 | 液晶表示素子 |
CA1313563C (en) * | 1988-10-26 | 1993-02-09 | Makoto Sasaki | Thin film transistor panel |
JPH03209435A (ja) * | 1990-01-12 | 1991-09-12 | Seiko Instr Inc | アクティブマトリックス型電気光学装置 |
JPH0490514A (ja) * | 1990-08-02 | 1992-03-24 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2780681B2 (ja) * | 1995-08-11 | 1998-07-30 | 日本電気株式会社 | アクティブマトリクス液晶表示パネル及びその製造方法 |
KR100225097B1 (ko) * | 1996-10-29 | 1999-10-15 | 구자홍 | 액정표시장치 및 그 제조방법 |
-
1997
- 1997-11-05 JP JP9302579A patent/JP3022443B2/ja not_active Expired - Fee Related
-
1998
- 1998-10-09 TW TW087116884A patent/TW445394B/zh not_active IP Right Cessation
- 1998-10-26 EP EP98120242A patent/EP0915365B1/de not_active Expired - Lifetime
- 1998-10-26 DE DE69835793T patent/DE69835793T2/de not_active Expired - Lifetime
- 1998-11-04 US US09/185,640 patent/US6262436B1/en not_active Expired - Lifetime
- 1998-11-05 KR KR1019980047384A patent/KR100323367B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0915365B1 (de) | 2006-09-06 |
JPH11145478A (ja) | 1999-05-28 |
EP0915365A3 (de) | 2001-10-17 |
JP3022443B2 (ja) | 2000-03-21 |
US6262436B1 (en) | 2001-07-17 |
EP0915365A2 (de) | 1999-05-12 |
DE69835793T2 (de) | 2007-09-13 |
KR19990045054A (ko) | 1999-06-25 |
TW445394B (en) | 2001-07-11 |
KR100323367B1 (ko) | 2002-09-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKYO, JP |
|
R082 | Change of representative |
Ref document number: 915365 Country of ref document: EP Representative=s name: MUELLER-BORE & PARTNER PATENTANWAELTE, EUROPEA, DE |