DE69832751D1 - Verfahren zur Verringerung der Einfluss des Substrats auf einem Resist - Google Patents

Verfahren zur Verringerung der Einfluss des Substrats auf einem Resist

Info

Publication number
DE69832751D1
DE69832751D1 DE69832751T DE69832751T DE69832751D1 DE 69832751 D1 DE69832751 D1 DE 69832751D1 DE 69832751 T DE69832751 T DE 69832751T DE 69832751 T DE69832751 T DE 69832751T DE 69832751 D1 DE69832751 D1 DE 69832751D1
Authority
DE
Germany
Prior art keywords
resist
influence
substrate
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69832751T
Other languages
English (en)
Other versions
DE69832751T2 (de
Inventor
Hirotoshi Fujie
Tohru Souki
Yukiko Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Wako Pure Chemical Corp
Original Assignee
Wako Pure Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chemical Industries Ltd filed Critical Wako Pure Chemical Industries Ltd
Application granted granted Critical
Publication of DE69832751D1 publication Critical patent/DE69832751D1/de
Publication of DE69832751T2 publication Critical patent/DE69832751T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
DE69832751T 1997-04-30 1998-04-23 Verfahren zur Verringerung der Einfluss des Substrats auf einem Resist Expired - Lifetime DE69832751T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12628397 1997-04-30
JP12628397 1997-04-30
JP15157097 1997-05-26
JP15157097 1997-05-26

Publications (2)

Publication Number Publication Date
DE69832751D1 true DE69832751D1 (de) 2006-01-19
DE69832751T2 DE69832751T2 (de) 2006-08-31

Family

ID=26462502

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69832751T Expired - Lifetime DE69832751T2 (de) 1997-04-30 1998-04-23 Verfahren zur Verringerung der Einfluss des Substrats auf einem Resist

Country Status (6)

Country Link
US (1) US6303264B1 (de)
EP (1) EP0875787B1 (de)
KR (2) KR19980081863A (de)
DE (1) DE69832751T2 (de)
SG (1) SG71778A1 (de)
TW (1) TW546540B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
US6531259B1 (en) 1999-06-21 2003-03-11 Matsushita Electric Industrial Co., Ltd. Pattern formation method and pattern formation material
JP2001264968A (ja) 2000-03-23 2001-09-28 Sumitomo Chem Co Ltd ポジ型レジスト組成物
US6514664B1 (en) 2000-07-20 2003-02-04 Arch Specialty Chemicals, Inc. Radiation sensitive compositions containing image quality and profile enhancement additives
JP2002091003A (ja) * 2000-09-19 2002-03-27 Tokyo Ohka Kogyo Co Ltd 薄膜形成用ポジ型レジスト組成物及びそれを用いた感光材料
JP3509760B2 (ja) * 2001-02-08 2004-03-22 株式会社半導体先端テクノロジーズ 半導体装置の製造方法
JP4514978B2 (ja) 2001-03-28 2010-07-28 國宏 市村 化学増幅型ポジ型レジスト組成物
EP1324134B1 (de) * 2001-12-27 2010-10-20 Shin-Etsu Chemical Co., Ltd. Resistzusammensetzung und Musterübertragungsverfahren
KR100764375B1 (ko) * 2005-12-15 2007-10-08 주식회사 하이닉스반도체 반도체 소자의 하드마스크용 고분자 및 이를 함유하는조성물
JP4703674B2 (ja) * 2008-03-14 2011-06-15 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP5286236B2 (ja) 2009-11-30 2013-09-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いて形成した膜及びそれを用いたパターン形成方法
US9698014B2 (en) * 2014-07-30 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd Photoresist composition to reduce photoresist pattern collapse

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58149042A (ja) * 1982-03-02 1983-09-05 Tokyo Ohka Kogyo Co Ltd ポジ型感光性組成物
DE3331691A1 (de) * 1983-09-02 1985-03-21 Basf Ag, 6700 Ludwigshafen Als positiv arbeitendes aufzeichnungsmaterial geeignetes lichtempfindliches, haertbares gemisch
JPS61219951A (ja) * 1985-03-27 1986-09-30 Japan Synthetic Rubber Co Ltd ポジ型感放射線性組成物
DE3637717A1 (de) * 1986-11-05 1988-05-11 Hoechst Ag Lichtempfindliches gemisch, dieses enthaltendes aufzeichnungsmaterial und verfahren zur herstellung von positiven oder negativen reliefkopien unter verwendung dieses materials
EP0537524A1 (de) * 1991-10-17 1993-04-21 Shipley Company Inc. Strahlungsempfindliche Zusammensetzungen und Verfahren
DE69324942T2 (de) * 1992-02-14 1999-10-07 Shipley Co Strahlungsempfindliche Zusammensetzungen und Verfahren
DE4222968A1 (de) * 1992-07-13 1994-01-20 Hoechst Ag Positiv-arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
DE4302681A1 (de) * 1993-02-01 1994-08-04 Hoechst Ag Sulfonsäureester, damit hergestellte strahlungsempfindliche Gemische und deren Verwendung
US5314782A (en) * 1993-03-05 1994-05-24 Morton International, Inc. Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
DE69511141T2 (de) * 1994-03-28 2000-04-20 Wako Pure Chem Ind Ltd Resistzusammensetzung für tiefe Ultraviolettbelichtung
TW394861B (en) 1994-04-25 2000-06-21 Tokyo Ohka Kogyo Co Ltd Positive resist composition
US5558971A (en) * 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
JP3449664B2 (ja) * 1995-04-19 2003-09-22 東京応化工業株式会社 ネガ型レジスト組成物
JP3046225B2 (ja) * 1995-06-15 2000-05-29 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
US5585220A (en) * 1995-12-01 1996-12-17 International Business Machines Corporation Resist composition with radiation sensitive acid generator
EP0780732B1 (de) * 1995-12-21 2003-07-09 Wako Pure Chemical Industries Ltd Polymerzusammensetzung und Rezistmaterial
JP3198915B2 (ja) * 1996-04-02 2001-08-13 信越化学工業株式会社 化学増幅ポジ型レジスト材料
TW388895B (en) * 1996-09-12 2000-05-01 Alpha Techno Co Ltd Keypad and its manufacturing processes
US5789612A (en) * 1997-09-29 1998-08-04 Dow Corning Corporation Neutralization method for polyorganosiloxanes
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof

Also Published As

Publication number Publication date
SG71778A1 (en) 2000-04-18
EP0875787B1 (de) 2005-12-14
DE69832751T2 (de) 2006-08-31
US6303264B1 (en) 2001-10-16
KR100592200B1 (ko) 2006-06-23
EP0875787A1 (de) 1998-11-04
KR19980081863A (ko) 1998-11-25
TW546540B (en) 2003-08-11

Similar Documents

Publication Publication Date Title
DE19781838T1 (de) Verfahren zur Beschichtung eines Substrats
DE69827856D1 (de) Verfahren zur Herstellung eines bedruckten Substrats
DE69822949D1 (de) Verfahren zur quantitativen Messung eines Substrats
DE69417268T4 (de) Verfahren zur elektronischen lizenzverteilung
DE59610870D1 (de) Verfahren zur Bezahlung der Nachkreditierung einer elektronischen Frankiermaschine
DE69737375D1 (de) Verfahren zur Befestigung eines elektronischen Bauteils auf einer Leiterplatte und System zum Ausführen des Verfahrens
DE69615038T2 (de) Verfahren zur oberflächenmontage eines kühlkörpers auf einer leiterplatte
DE69804058D1 (de) Verfahren zur Beschichtung eines gedruckten Aufzeichnungsmaterials
DE69815412D1 (de) Verfahren zur Resistbeschichtung und Entwicklung des Resists
DE69533230D1 (de) Verfahren und vorrichtung zur verbesserung der fehlertoleranz eines netzwerkes
DE69426791D1 (de) Verfahren zur Bearbeitung der Oberfläche eines beschichteten Substrats
DE69627357D1 (de) Verfahren und vorrichtung zur trocknung eines beschichteten substrats
DE69702825D1 (de) Verfahren und Vorrichtung zur Fotolackbeschichtung eines Substrats
DE69832751D1 (de) Verfahren zur Verringerung der Einfluss des Substrats auf einem Resist
DE69722185D1 (de) Verfahren zur nach-ätzung eines mechanisch behandelten substrats
DE19983807T1 (de) Verfahren und Vorrichtung zur Oberflächemmarkierung eines Substrats
DE69432859D1 (de) Verfahren zur reinigung von kollagenase
DE69934812D1 (de) Verfahren und vorrichtung zur bestimmung der herkunft einer datenträgerplatte
DE59400559D1 (de) Verfahren zur überprüfung der konvertierungsfähigkeit eines katalysators
DE69605570T2 (de) Verfahren zur massenproduktion von antennen mit gedruckten schaltungen
DE59404052D1 (de) Verfahren zur überprüfung der konvertierungsfähigkeit eines katalysators
DE69419186D1 (de) Verfahren zur Ätzung eines halbleitenden Substrats
DE59409997D1 (de) Verfahren zur elektronischen montage von druckbögen
DE69903937T2 (de) Vorrichtung und verfahren zur reduzierung der einschaltzeit eines kristalloszillators
DE69516673D1 (de) Verfahren und gerät zur beschichtung eines substrats

Legal Events

Date Code Title Description
8364 No opposition during term of opposition