DE69826171D1 - Zuführvorrichtung für Prozessgas - Google Patents

Zuführvorrichtung für Prozessgas

Info

Publication number
DE69826171D1
DE69826171D1 DE69826171T DE69826171T DE69826171D1 DE 69826171 D1 DE69826171 D1 DE 69826171D1 DE 69826171 T DE69826171 T DE 69826171T DE 69826171 T DE69826171 T DE 69826171T DE 69826171 D1 DE69826171 D1 DE 69826171D1
Authority
DE
Germany
Prior art keywords
supply device
gas supply
process gas
supply
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69826171T
Other languages
English (en)
Other versions
DE69826171T2 (de
Inventor
Tatsuo Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE69826171D1 publication Critical patent/DE69826171D1/de
Application granted granted Critical
Publication of DE69826171T2 publication Critical patent/DE69826171T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
DE69826171T 1997-05-02 1998-04-30 Zuführvorrichtung für Prozessgas Expired - Fee Related DE69826171T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13026197 1997-05-02
JP9130261A JPH10306377A (ja) 1997-05-02 1997-05-02 微量ガス供給方法及びその装置

Publications (2)

Publication Number Publication Date
DE69826171D1 true DE69826171D1 (de) 2004-10-21
DE69826171T2 DE69826171T2 (de) 2005-11-17

Family

ID=15030046

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69826171T Expired - Fee Related DE69826171T2 (de) 1997-05-02 1998-04-30 Zuführvorrichtung für Prozessgas

Country Status (4)

Country Link
US (1) US5989345A (de)
EP (1) EP0875595B1 (de)
JP (1) JPH10306377A (de)
DE (1) DE69826171T2 (de)

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US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
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WO2003029515A2 (en) 2001-07-16 2003-04-10 Applied Materials, Inc. Formation of composite tungsten films
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
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US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
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JP4352783B2 (ja) * 2002-08-23 2009-10-28 東京エレクトロン株式会社 ガス供給系及び処理システム
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JP4180948B2 (ja) * 2003-03-24 2008-11-12 東京エレクトロン株式会社 基板処理装置および基板処理方法、ガスノズル
US20050271893A1 (en) * 2004-06-04 2005-12-08 Applied Microstructures, Inc. Controlled vapor deposition of multilayered coatings adhered by an oxide layer
US9725805B2 (en) * 2003-06-27 2017-08-08 Spts Technologies Limited Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
US7638167B2 (en) * 2004-06-04 2009-12-29 Applied Microstructures, Inc. Controlled deposition of silicon-containing coatings adhered by an oxide layer
US20040261703A1 (en) * 2003-06-27 2004-12-30 Jeffrey D. Chinn Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
KR100514170B1 (ko) * 2003-07-25 2005-09-09 삼성전자주식회사 박막 형성장치 및 이를 이용한 반도체 소자의 박막 형성방법
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
KR100541814B1 (ko) * 2003-09-15 2006-01-11 삼성전자주식회사 화학기상증착장치
KR100589053B1 (ko) * 2003-10-15 2006-06-12 삼성전자주식회사 소스 공급 장치, 소스 공급 방법 및 이를 이용한 원자층증착 방법
KR20050040969A (ko) * 2003-10-29 2005-05-04 삼성전자주식회사 확산 시스템
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
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US20060021574A1 (en) * 2004-08-02 2006-02-02 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
JP5264039B2 (ja) * 2004-08-10 2013-08-14 東京エレクトロン株式会社 薄膜形成装置及び薄膜形成方法
US20070271751A1 (en) * 2005-01-27 2007-11-29 Weidman Timothy W Method of forming a reliable electrochemical capacitor
KR101014240B1 (ko) * 2005-01-27 2011-02-16 어플라이드 머티어리얼스, 인코포레이티드 루테늄 층 증착 장치 및 방법
US20060201425A1 (en) * 2005-03-08 2006-09-14 Applied Microstructures, Inc. Precursor preparation for controlled deposition coatings
JP4506677B2 (ja) * 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
TWI329135B (en) 2005-11-04 2010-08-21 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
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US7521379B2 (en) 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
US8821637B2 (en) 2007-01-29 2014-09-02 Applied Materials, Inc. Temperature controlled lid assembly for tungsten nitride deposition
US8900695B2 (en) 2007-02-23 2014-12-02 Applied Microstructures, Inc. Durable conformal wear-resistant carbon-doped metal oxide-comprising coating
US20080248263A1 (en) * 2007-04-02 2008-10-09 Applied Microstructures, Inc. Method of creating super-hydrophobic and-or super-hydrophilic surfaces on substrates, and articles created thereby
US8236379B2 (en) * 2007-04-02 2012-08-07 Applied Microstructures, Inc. Articles with super-hydrophobic and-or super-hydrophilic surfaces and method of formation
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
JP5854668B2 (ja) * 2011-07-07 2016-02-09 芝浦メカトロニクス株式会社 気液混合流体生成装置、気液混合流体生成方法、処理装置及び処理方法
CN104707494A (zh) * 2015-03-30 2015-06-17 上海纳诺巴伯纳米科技有限公司 一种超饱和氢气溶液的制备装置及其制备方法
DE102016003875A1 (de) * 2016-03-31 2017-10-05 Linde Aktiengesellschaft Volumetrischer und gravimetrischer Füllstand zur Herstellung von Gasgemischen
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Also Published As

Publication number Publication date
EP0875595B1 (de) 2004-09-15
US5989345A (en) 1999-11-23
DE69826171T2 (de) 2005-11-17
EP0875595A1 (de) 1998-11-04
JPH10306377A (ja) 1998-11-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee