DE69821105D1 - Bipolar mos-leistungstransistor ohne latch-up - Google Patents
Bipolar mos-leistungstransistor ohne latch-upInfo
- Publication number
- DE69821105D1 DE69821105D1 DE69821105T DE69821105T DE69821105D1 DE 69821105 D1 DE69821105 D1 DE 69821105D1 DE 69821105 T DE69821105 T DE 69821105T DE 69821105 T DE69821105 T DE 69821105T DE 69821105 D1 DE69821105 D1 DE 69821105D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- nmosfet
- npn bipolar
- silicon carbide
- base layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82554 | 1987-08-07 | ||
| US4942397P | 1997-06-12 | 1997-06-12 | |
| US49423P | 1997-06-12 | ||
| US08/891,221 US5969378A (en) | 1997-06-12 | 1997-07-10 | Latch-up free power UMOS-bipolar transistor |
| US891221 | 1997-07-10 | ||
| US09/082,554 US6121633A (en) | 1997-06-12 | 1998-05-21 | Latch-up free power MOS-bipolar transistor |
| PCT/US1998/012007 WO1998057378A1 (en) | 1997-06-12 | 1998-06-10 | Latch-up free power mos-bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69821105D1 true DE69821105D1 (de) | 2004-02-19 |
| DE69821105T2 DE69821105T2 (de) | 2004-07-22 |
Family
ID=27367535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69821105T Expired - Lifetime DE69821105T2 (de) | 1997-06-12 | 1998-06-10 | Bipolar mos-leistungstransistor ohne latch-up |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6121633A (de) |
| EP (1) | EP0990268B1 (de) |
| JP (1) | JP4143134B2 (de) |
| CN (1) | CN1126180C (de) |
| AT (1) | ATE257977T1 (de) |
| AU (1) | AU8064698A (de) |
| CA (1) | CA2286699C (de) |
| DE (1) | DE69821105T2 (de) |
| WO (1) | WO1998057378A1 (de) |
Families Citing this family (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU747260B2 (en) | 1997-07-25 | 2002-05-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| DE19833214C1 (de) * | 1998-07-23 | 1999-08-12 | Siemens Ag | J-FET-Halbleiteranordnung |
| JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| EP1168539B1 (de) | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitridhalbleiterlaserelement |
| EP1090428B1 (de) * | 1999-04-08 | 2006-08-16 | Philips Electronics N.V. | Durchbruchsdiode und verfahren zur herstellung |
| US6686616B1 (en) * | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
| US6649975B2 (en) * | 2000-11-16 | 2003-11-18 | Silicon Semiconductor Corporation | Vertical power devices having trench-based electrodes therein |
| WO2002080281A1 (en) * | 2001-04-02 | 2002-10-10 | The Regent Of The University Of California | Horizontal current bipolar transistor |
| JP4865166B2 (ja) * | 2001-08-30 | 2012-02-01 | 新電元工業株式会社 | トランジスタの製造方法、ダイオードの製造方法 |
| US6906350B2 (en) | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
| US6764907B2 (en) * | 2002-02-19 | 2004-07-20 | Bart J. Van Zeghbroeck | Method of fabricating self-aligned silicon carbide semiconductor devices |
| US6982440B2 (en) * | 2002-02-19 | 2006-01-03 | Powersicel, Inc. | Silicon carbide semiconductor devices with a regrown contact layer |
| JP4110875B2 (ja) * | 2002-08-09 | 2008-07-02 | 株式会社デンソー | 炭化珪素半導体装置 |
| US6956239B2 (en) * | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
| JP2005167035A (ja) * | 2003-12-03 | 2005-06-23 | Kansai Electric Power Co Inc:The | 炭化珪素半導体素子およびその製造方法 |
| US7275357B2 (en) * | 2004-03-30 | 2007-10-02 | Cnh America Llc | Cotton module program control using yield monitor signal |
| US7345309B2 (en) * | 2004-08-31 | 2008-03-18 | Lockheed Martin Corporation | SiC metal semiconductor field-effect transistor |
| US7238224B2 (en) * | 2004-10-29 | 2007-07-03 | Hewlett-Packard Development Company, L.P. | Fluid-gas separator |
| US20060091606A1 (en) * | 2004-10-28 | 2006-05-04 | Gary Paugh | Magnetic building game |
| US7265399B2 (en) * | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
| US7348612B2 (en) * | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
| US7326962B2 (en) * | 2004-12-15 | 2008-02-05 | Cree, Inc. | Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same |
| US7476594B2 (en) * | 2005-03-30 | 2009-01-13 | Cree, Inc. | Methods of fabricating silicon nitride regions in silicon carbide and resulting structures |
| JP2006313773A (ja) * | 2005-05-06 | 2006-11-16 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| US7414268B2 (en) | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
| US8203185B2 (en) * | 2005-06-21 | 2012-06-19 | Cree, Inc. | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
| JP5011493B2 (ja) * | 2005-09-14 | 2012-08-29 | 関西電力株式会社 | 炭化珪素半導体素子の製造方法 |
| US7402844B2 (en) * | 2005-11-29 | 2008-07-22 | Cree, Inc. | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
| US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
| US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
| WO2008020911A2 (en) | 2006-08-17 | 2008-02-21 | Cree, Inc. | High power insulated gate bipolar transistors |
| US7646043B2 (en) * | 2006-09-28 | 2010-01-12 | Cree, Inc. | Transistors having buried p-type layers coupled to the gate |
| US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
| US7687825B2 (en) * | 2007-09-18 | 2010-03-30 | Cree, Inc. | Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication |
| JP2009182271A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 炭化珪素半導体装置 |
| US8221546B2 (en) * | 2008-03-26 | 2012-07-17 | Ss Sc Ip, Llc | Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
| US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
| US7800196B2 (en) * | 2008-09-30 | 2010-09-21 | Northrop Grumman Systems Corporation | Semiconductor structure with an electric field stop layer for improved edge termination capability |
| US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
| US8193848B2 (en) * | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
| US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
| US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
| US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
| US8563986B2 (en) * | 2009-11-03 | 2013-10-22 | Cree, Inc. | Power semiconductor devices having selectively doped JFET regions and related methods of forming such devices |
| US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
| JPWO2012056536A1 (ja) | 2010-10-27 | 2014-03-20 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| SE535380C2 (sv) * | 2011-01-31 | 2012-07-17 | Fairchild Semiconductor | Bipolär transistor i kiselkarbid med övervuxen emitter |
| US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9112048B2 (en) * | 2011-08-17 | 2015-08-18 | Ramgoss Inc. | Vertical field effect transistor on oxide semiconductor substrate |
| US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
| WO2013036370A1 (en) | 2011-09-11 | 2013-03-14 | Cree, Inc. | High current density power module comprising transistors with improved layout |
| US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
| US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
| US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
| US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
| CN102507704A (zh) * | 2011-10-18 | 2012-06-20 | 重庆邮电大学 | 基于碳化硅的肖特基势垒二极管氧传感器及制造方法 |
| JP2013145770A (ja) * | 2012-01-13 | 2013-07-25 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| JP5790573B2 (ja) * | 2012-04-03 | 2015-10-07 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP6070526B2 (ja) * | 2013-12-11 | 2017-02-01 | 豊田合成株式会社 | 半導体装置の製造方法 |
| US9917180B2 (en) | 2014-02-10 | 2018-03-13 | United Silicon Carbide, Inc. | Trenched and implanted bipolar junction transistor |
| DE112016004981T5 (de) * | 2015-10-30 | 2018-07-19 | Mitsubishi Electric Corporation | Siliciumcarbid-halbleitervorrichtung |
| CN106684132B (zh) * | 2016-12-29 | 2019-10-01 | 西安电子科技大学 | 基于有源区沟槽结构的碳化硅双极型晶体管及其制作方法 |
| DE102017220913A1 (de) * | 2017-11-23 | 2019-05-23 | Robert Bosch Gmbh | Vertikaler Leistungstransistor mit Heteroübergangen |
| US10276667B1 (en) * | 2018-05-31 | 2019-04-30 | Silanna Asia Pte Ltd | High voltage breakdown tapered vertical conduction junction transistor |
| DE102018113573B4 (de) * | 2018-06-07 | 2022-11-03 | Semikron Elektronik Gmbh & Co. Kg Patentabteilung | Diode mit einem Halbleiterkörper |
| CN112601664A (zh) | 2018-07-17 | 2021-04-02 | 惠普发展公司，有限责任合伙企业 | 打印物质输出调整 |
| CN111199972B (zh) * | 2018-11-16 | 2023-05-16 | 比亚迪半导体股份有限公司 | 集成级联器件及其制备方法 |
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| US4048649A (en) * | 1976-02-06 | 1977-09-13 | Transitron Electronic Corporation | Superintegrated v-groove isolated bipolar and vmos transistors |
| US4329705A (en) * | 1979-05-21 | 1982-05-11 | Exxon Research & Engineering Co. | VMOS/Bipolar power switching device |
| US5014102A (en) * | 1982-04-01 | 1991-05-07 | General Electric Company | MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal |
| EP0159663A3 (de) * | 1984-04-26 | 1987-09-23 | General Electric Company | Thyristoren, Feldeffekttransistoren mit isoliertem Gate und MOSFETs hoher Dichte gesteuert durch eine in einer V-Nut angebrachte MOS-Struktur und Verfahren zur Herstellung |
| JPS61104667A (ja) * | 1984-10-29 | 1986-05-22 | Oki Electric Ind Co Ltd | Ｍｏｓトランジスタ |
| US4725562A (en) * | 1986-03-27 | 1988-02-16 | International Business Machines Corporation | Method of making a contact to a trench isolated device |
| JPS6347983A (ja) * | 1986-08-18 | 1988-02-29 | Sharp Corp | 炭化珪素電界効果トランジスタ |
| US4799095A (en) * | 1987-07-06 | 1989-01-17 | General Electric Company | Metal oxide semiconductor gated turn off thyristor |
| US5087576A (en) * | 1987-10-26 | 1992-02-11 | North Carolina State University | Implantation and electrical activation of dopants into monocrystalline silicon carbide |
| CA1313571C (en) * | 1987-10-26 | 1993-02-09 | John W. Palmour | Metal oxide semiconductor field-effect transistor formed in silicon carbide |
| US4945394A (en) * | 1987-10-26 | 1990-07-31 | North Carolina State University | Bipolar junction transistor on silicon carbide |
| US4981551A (en) * | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
| US5202750A (en) * | 1990-04-09 | 1993-04-13 | U.S. Philips Corp. | MOS-gated thyristor |
| JP2542448B2 (ja) * | 1990-05-24 | 1996-10-09 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
| JP2504862B2 (ja) * | 1990-10-08 | 1996-06-05 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| US5168331A (en) * | 1991-01-31 | 1992-12-01 | Siliconix Incorporated | Power metal-oxide-semiconductor field effect transistor |
| US5264713A (en) * | 1991-06-14 | 1993-11-23 | Cree Research, Inc. | Junction field-effect transistor formed in silicon carbide |
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| JPH0582792A (ja) * | 1991-09-25 | 1993-04-02 | Toshiba Corp | 半導体装置の製造方法 |
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| US5679966A (en) * | 1995-10-05 | 1997-10-21 | North Carolina State University | Depleted base transistor with high forward voltage blocking capability |
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| US5969378A (en) * | 1997-06-12 | 1999-10-19 | Cree Research, Inc. | Latch-up free power UMOS-bipolar transistor |
-
1998
- 1998-05-21 US US09/082,554 patent/US6121633A/en not_active Expired - Lifetime
- 1998-06-10 DE DE69821105T patent/DE69821105T2/de not_active Expired - Lifetime
- 1998-06-10 WO PCT/US1998/012007 patent/WO1998057378A1/en active IP Right Grant
- 1998-06-10 AU AU80646/98A patent/AU8064698A/en not_active Abandoned
- 1998-06-10 EP EP98928969A patent/EP0990268B1/de not_active Expired - Lifetime
- 1998-06-10 JP JP50314799A patent/JP4143134B2/ja not_active Expired - Lifetime
- 1998-06-10 CN CN98806110.4A patent/CN1126180C/zh not_active Expired - Fee Related
- 1998-06-10 AT AT98928969T patent/ATE257977T1/de not_active IP Right Cessation
- 1998-06-10 CA CA002286699A patent/CA2286699C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0990268A1 (de) | 2000-04-05 |
| JP2002514355A (ja) | 2002-05-14 |
| CN1260068A (zh) | 2000-07-12 |
| WO1998057378A9 (en) | 1999-07-22 |
| EP0990268B1 (de) | 2004-01-14 |
| US6121633A (en) | 2000-09-19 |
| DE69821105T2 (de) | 2004-07-22 |
| ATE257977T1 (de) | 2004-01-15 |
| CA2286699C (en) | 2006-04-04 |
| WO1998057378A1 (en) | 1998-12-17 |
| JP4143134B2 (ja) | 2008-09-03 |
| CA2286699A1 (en) | 1998-12-17 |
| AU8064698A (en) | 1998-12-30 |
| CN1126180C (zh) | 2003-10-29 |
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