DE69817787D1 - Rasterelektronenmikroskop mit elektrostatischem objektiv und elektrische abtastvorrichtung - Google Patents

Rasterelektronenmikroskop mit elektrostatischem objektiv und elektrische abtastvorrichtung

Info

Publication number
DE69817787D1
DE69817787D1 DE69817787T DE69817787T DE69817787D1 DE 69817787 D1 DE69817787 D1 DE 69817787D1 DE 69817787 T DE69817787 T DE 69817787T DE 69817787 T DE69817787 T DE 69817787T DE 69817787 D1 DE69817787 D1 DE 69817787D1
Authority
DE
Germany
Prior art keywords
electron microscope
electrostatic lens
grid electron
electric scanner
scanner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69817787T
Other languages
English (en)
Other versions
DE69817787T2 (de
Inventor
M Krans
P Krijn
Alexander Henstra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Application granted granted Critical
Publication of DE69817787D1 publication Critical patent/DE69817787D1/de
Publication of DE69817787T2 publication Critical patent/DE69817787T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
DE69817787T 1997-12-23 1998-12-14 Rasterelektronenmikroskop mit elektrostatischem objektiv und elektrische abtastvorrichtung Expired - Lifetime DE69817787T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP97204090 1997-12-23
EP97204090 1997-12-23
PCT/IB1998/002006 WO1999034397A1 (en) 1997-12-23 1998-12-14 Sem provided with an electrostatic objective and an electrical scanning device

Publications (2)

Publication Number Publication Date
DE69817787D1 true DE69817787D1 (de) 2003-10-09
DE69817787T2 DE69817787T2 (de) 2004-04-01

Family

ID=8229121

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69817787T Expired - Lifetime DE69817787T2 (de) 1997-12-23 1998-12-14 Rasterelektronenmikroskop mit elektrostatischem objektiv und elektrische abtastvorrichtung

Country Status (5)

Country Link
US (1) US6218664B1 (de)
EP (1) EP0968517B1 (de)
JP (1) JP4215282B2 (de)
DE (1) DE69817787T2 (de)
WO (1) WO1999034397A1 (de)

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EP1238405B1 (de) * 1999-12-14 2014-06-18 Applied Materials, Inc. Verfahren und system zur untersuchung von substratoberflächen mittels teilchenstrahlapparat
AU2001238148A1 (en) * 2000-02-09 2001-08-20 Fei Company Through-the-lens collection of secondary particles for a focused ion beam system
JP5322363B2 (ja) 2000-02-09 2013-10-23 エフ イー アイ カンパニ 微小二次加工処理用マルチカラムｆｉｂ
US6392231B1 (en) * 2000-02-25 2002-05-21 Hermes-Microvision, Inc. Swinging objective retarding immersion lens electron optics focusing, deflection and signal collection system and method
US6960766B2 (en) * 2000-02-25 2005-11-01 Hermes-Microvision, Inc. Swinging objective retarding immersion lens electron optics focusing, deflection and signal collection system and method
US6946654B2 (en) * 2000-04-24 2005-09-20 Fei Company Collection of secondary electrons through the objective lens of a scanning electron microscope
US6683320B2 (en) 2000-05-18 2004-01-27 Fei Company Through-the-lens neutralization for charged particle beam system
US6710342B1 (en) 2000-09-22 2004-03-23 Hermes Microvision, Inc. Method and apparatus for scanning semiconductor wafers using a scanning electron microscope
US6771013B2 (en) 2000-10-17 2004-08-03 Fei Company Low power schottky emitter
JP2004513477A (ja) * 2000-10-31 2004-04-30 フェイ　カンパニ 静電対物に調整可能な最終電極を設けたｓｅｍ
JP4083768B2 (ja) * 2000-12-01 2008-04-30 株式会社東芝 電子ビーム照射装置
JP2004516631A (ja) 2000-12-22 2004-06-03 フェイ カンパニ 特に半導体ウェーハ用の粒子光学検査装置
DE60105199T2 (de) * 2000-12-22 2005-08-11 Fei Co., Hillsboro Sem mit einem sekundärelektronendetektor mit einer zentralelektrode
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
TW579536B (en) * 2001-07-02 2004-03-11 Zeiss Carl Semiconductor Mfg Examining system for the particle-optical imaging of an object, deflector for charged particles as well as method for the operation of the same
JP3953309B2 (ja) 2001-12-04 2007-08-08 株式会社トプコン 走査電子顕微鏡装置
KR100813210B1 (ko) * 2002-03-21 2008-03-13 헤르메스-마이크로비전 인코포레이티드 진동 지연 침지 대물 렌즈의 전자 광 포커싱, 검출 및신호 수집 시스템 및 방법
US7528614B2 (en) 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
US7034297B2 (en) * 2003-03-05 2006-04-25 Applied Materials, Israel, Ltd. Method and system for use in the monitoring of samples with a charged particle beam
US6897443B2 (en) * 2003-06-02 2005-05-24 Harald Gross Portable scanning electron microscope
US7096568B1 (en) 2003-07-10 2006-08-29 Zyvex Corporation Method of manufacturing a microcomponent assembly
JP4316394B2 (ja) * 2004-01-21 2009-08-19 株式会社東芝 荷電ビーム装置
US7025619B2 (en) * 2004-02-13 2006-04-11 Zyvex Corporation Sockets for microassembly
US7081630B2 (en) * 2004-03-12 2006-07-25 Zyvex Corporation Compact microcolumn for automated assembly
US6956219B2 (en) * 2004-03-12 2005-10-18 Zyvex Corporation MEMS based charged particle deflector design
DE102004037781A1 (de) * 2004-08-03 2006-02-23 Carl Zeiss Nts Gmbh Elektronenstrahlgerät
JP2006114225A (ja) * 2004-10-12 2006-04-27 Hitachi High-Technologies Corp 荷電粒子線装置
US7314382B2 (en) 2005-05-18 2008-01-01 Zyvex Labs, Llc Apparatus and methods of manufacturing and assembling microscale and nanoscale components and assemblies
US7605377B2 (en) * 2006-10-17 2009-10-20 Zyvex Corporation On-chip reflectron and ion optics
US8569712B2 (en) 2010-10-07 2013-10-29 Fei Company Beam blanker for interrupting a beam of charged particles
EP2453461A1 (de) 2010-11-10 2012-05-16 FEI Company Quelle für geladene Teilchen mit integriertem elektrostatischen Energiefilter
US9111715B2 (en) 2011-11-08 2015-08-18 Fei Company Charged particle energy filter
EP2722865A1 (de) 2012-10-22 2014-04-23 Fei Company Strahlpuls-Erzeuger zur Verwendung in der Teilchenstrahlmikroskopie
US9767984B2 (en) * 2014-09-30 2017-09-19 Fei Company Chicane blanker assemblies for charged particle beam systems and methods of using the same
US9666407B2 (en) * 2015-02-25 2017-05-30 Industry-University Cooperation Foundation Sunmoon University Electrostatic quadrupole deflector for microcolumn
US10032599B2 (en) 2016-11-28 2018-07-24 FEI Cmnpany Time-resolved charged particle microscopy
EP3327748B1 (de) * 2016-11-28 2019-03-27 FEI Company Flugzeitspektroskopie geladener teilchen
US10692694B2 (en) * 2017-12-27 2020-06-23 Fei Company Method and apparatus for enhancing SE detection in mirror-based light imaging charged particle microscopes

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3638682A1 (de) * 1986-11-13 1988-05-19 Siemens Ag Spektrometerobjektiv fuer korpuskularstrahlmesstechnik
GB2216714B (en) * 1988-03-11 1992-10-14 Ulvac Corp Ion implanter system
JP2851213B2 (ja) * 1992-09-28 1999-01-27 株式会社東芝 走査電子顕微鏡
US5644132A (en) * 1994-06-20 1997-07-01 Opan Technologies Ltd. System for high resolution imaging and measurement of topographic and material features on a specimen

Also Published As

Publication number Publication date
JP4215282B2 (ja) 2009-01-28
DE69817787T2 (de) 2004-04-01
EP0968517A1 (de) 2000-01-05
JP2001513258A (ja) 2001-08-28
WO1999034397A1 (en) 1999-07-08
US6218664B1 (en) 2001-04-17
EP0968517B1 (de) 2003-09-03

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