DE69814619D1 - Siliziumkarbid feldgesteuerter zweipoliger schalter - Google Patents

Siliziumkarbid feldgesteuerter zweipoliger schalter

Info

Publication number
DE69814619D1
DE69814619D1 DE69814619T DE69814619T DE69814619D1 DE 69814619 D1 DE69814619 D1 DE 69814619D1 DE 69814619 T DE69814619 T DE 69814619T DE 69814619 T DE69814619 T DE 69814619T DE 69814619 D1 DE69814619 D1 DE 69814619D1
Authority
DE
Germany
Prior art keywords
epitaxial layer
silicon carbide
conductivity type
type silicon
field controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69814619T
Other languages
English (en)
Other versions
DE69814619T2 (de
Inventor
Ranbir Singh
John W Palmour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of DE69814619D1 publication Critical patent/DE69814619D1/de
Application granted granted Critical
Publication of DE69814619T2 publication Critical patent/DE69814619T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Push-Button Switches (AREA)
  • Keying Circuit Devices (AREA)
  • Contacts (AREA)
DE69814619T 1997-04-30 1998-03-20 Siliziumkarbid feldgesteuerter zweipoliger schalter Expired - Lifetime DE69814619T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US846286 1992-03-03
US08/846,286 US6011279A (en) 1997-04-30 1997-04-30 Silicon carbide field controlled bipolar switch
PCT/US1998/005487 WO1998049731A1 (en) 1997-04-30 1998-03-20 Silicon carbide field conrolled bipolar switch

Publications (2)

Publication Number Publication Date
DE69814619D1 true DE69814619D1 (de) 2003-06-18
DE69814619T2 DE69814619T2 (de) 2004-03-18

Family

ID=25297449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69814619T Expired - Lifetime DE69814619T2 (de) 1997-04-30 1998-03-20 Siliziumkarbid feldgesteuerter zweipoliger schalter

Country Status (10)

Country Link
US (1) US6011279A (de)
EP (1) EP0979531B1 (de)
JP (1) JP4680330B2 (de)
KR (1) KR100514398B1 (de)
CN (1) CN1166001C (de)
AT (1) ATE240588T1 (de)
AU (1) AU6572898A (de)
CA (1) CA2285067C (de)
DE (1) DE69814619T2 (de)
WO (1) WO1998049731A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
DE19833214C1 (de) * 1998-07-23 1999-08-12 Siemens Ag J-FET-Halbleiteranordnung
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6803243B2 (en) 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (de) 1999-03-04 2009-12-16 Nichia Corporation Nitridhalbleiterlaserelement
SE9901410D0 (sv) * 1999-04-21 1999-04-21 Abb Research Ltd Abipolar transistor
US6909119B2 (en) * 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6514779B1 (en) * 2001-10-17 2003-02-04 Cree, Inc. Large area silicon carbide devices and manufacturing methods therefor
US6734462B1 (en) 2001-12-07 2004-05-11 The United States Of America As Represented By The Secretary Of The Army Silicon carbide power devices having increased voltage blocking capabilities
CA2381128A1 (en) * 2002-04-09 2003-10-09 Quantiscript Inc. Plasma polymerized electron beam resist
CN100433256C (zh) * 2004-03-18 2008-11-12 克里公司 减少堆垛层错成核位置的顺序光刻方法和具有减少的堆垛层错成核位置的结构
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
DE102004047313B3 (de) * 2004-09-29 2006-03-30 Siced Electronics Development Gmbh & Co. Kg Halbleiteranordnung mit einem Tunnelkontakt und Verfahren zu deren Herstellung
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
JP2011199306A (ja) * 2011-06-03 2011-10-06 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
CN104201211B (zh) * 2014-08-27 2016-03-30 温州大学 制备SiC超快恢复二极管及工艺
SE541290C2 (en) * 2017-09-15 2019-06-11 Ascatron Ab A method for manufacturing a grid
CN113097298A (zh) * 2021-03-30 2021-07-09 全球能源互联网研究院有限公司 一种绝缘栅双极型晶体管及其制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
US4569118A (en) * 1977-12-23 1986-02-11 General Electric Company Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US4937644A (en) * 1979-11-16 1990-06-26 General Electric Company Asymmetrical field controlled thyristor
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
US4571815A (en) * 1981-11-23 1986-02-25 General Electric Company Method of making vertical channel field controlled device employing a recessed gate structure
US5087576A (en) * 1987-10-26 1992-02-11 North Carolina State University Implantation and electrical activation of dopants into monocrystalline silicon carbide
US4994883A (en) * 1989-10-02 1991-02-19 General Electric Company Field controlled diode (FCD) having MOS trench gates
US5202750A (en) * 1990-04-09 1993-04-13 U.S. Philips Corp. MOS-gated thyristor
JPH07502379A (ja) * 1991-12-23 1995-03-09 フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 電子部品およびその製造方法
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
US5554561A (en) * 1993-04-30 1996-09-10 Texas Instruments Incorporated Epitaxial overgrowth method
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
DE9411601U1 (de) * 1993-09-08 1994-10-13 Siemens Ag Strombegrenzender Schalter
AU4942993A (en) * 1993-09-08 1995-03-27 Siemens Aktiengesellschaft Current limiting device
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
US5387805A (en) * 1994-01-05 1995-02-07 Metzler; Richard A. Field controlled thyristor
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5471075A (en) * 1994-05-26 1995-11-28 North Carolina State University Dual-channel emitter switched thyristor with trench gate
WO1995034915A1 (en) * 1994-06-13 1995-12-21 Abb Research Ltd. Semiconductor device in silicon carbide
JP3277075B2 (ja) * 1994-09-07 2002-04-22 日本碍子株式会社 半導体装置およびその製造方法
SE9601176D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby
DE19644821C1 (de) * 1996-10-29 1998-02-12 Daimler Benz Ag Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften

Also Published As

Publication number Publication date
ATE240588T1 (de) 2003-05-15
KR100514398B1 (ko) 2005-09-13
WO1998049731A1 (en) 1998-11-05
CA2285067C (en) 2006-05-02
CA2285067A1 (en) 1998-11-05
CN1254442A (zh) 2000-05-24
AU6572898A (en) 1998-11-24
US6011279A (en) 2000-01-04
JP2001522533A (ja) 2001-11-13
EP0979531A1 (de) 2000-02-16
JP4680330B2 (ja) 2011-05-11
KR20010006559A (ko) 2001-01-26
EP0979531B1 (de) 2003-05-14
CN1166001C (zh) 2004-09-08
DE69814619T2 (de) 2004-03-18

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