DE69813888T2 - Verfahren zum auftragen ferroelektrischer dünnschichten - Google Patents
Verfahren zum auftragen ferroelektrischer dünnschichten Download PDFInfo
- Publication number
- DE69813888T2 DE69813888T2 DE69813888T DE69813888T DE69813888T2 DE 69813888 T2 DE69813888 T2 DE 69813888T2 DE 69813888 T DE69813888 T DE 69813888T DE 69813888 T DE69813888 T DE 69813888T DE 69813888 T2 DE69813888 T2 DE 69813888T2
- Authority
- DE
- Germany
- Prior art keywords
- thin layers
- ferroelectric thin
- applying
- applying ferroelectric
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
- Y10S977/891—Vapor phase deposition
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/996,574 US6010744A (en) | 1997-12-23 | 1997-12-23 | Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films |
PCT/US1998/026258 WO1999032684A1 (en) | 1997-12-23 | 1998-12-10 | Method for deposition of ferroelectric thin films |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69813888D1 DE69813888D1 (de) | 2003-05-28 |
DE69813888T2 true DE69813888T2 (de) | 2004-01-29 |
Family
ID=25543072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69813888T Expired - Fee Related DE69813888T2 (de) | 1997-12-23 | 1998-12-10 | Verfahren zum auftragen ferroelektrischer dünnschichten |
Country Status (7)
Country | Link |
---|---|
US (1) | US6010744A (de) |
EP (1) | EP1042528B1 (de) |
JP (1) | JP2001527281A (de) |
KR (1) | KR20010033554A (de) |
DE (1) | DE69813888T2 (de) |
TW (1) | TW482827B (de) |
WO (1) | WO1999032684A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6500489B1 (en) * | 1996-11-27 | 2002-12-31 | Advanced Technology Materials, Inc. | Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides |
US5910880A (en) | 1997-08-20 | 1999-06-08 | Micron Technology, Inc. | Semiconductor circuit components and capacitors |
US6787186B1 (en) * | 1997-12-18 | 2004-09-07 | Advanced Technology Materials, Inc. | Method of controlled chemical vapor deposition of a metal oxide ceramic layer |
JPH11186523A (ja) * | 1997-12-19 | 1999-07-09 | Sharp Corp | 絶縁体材料、絶縁膜被覆基板、その製造方法及びその用途 |
US6162744A (en) * | 1998-02-28 | 2000-12-19 | Micron Technology, Inc. | Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers |
US6191443B1 (en) | 1998-02-28 | 2001-02-20 | Micron Technology, Inc. | Capacitors, methods of forming capacitors, and DRAM memory cells |
US6156638A (en) | 1998-04-10 | 2000-12-05 | Micron Technology, Inc. | Integrated circuitry and method of restricting diffusion from one material to another |
US6730559B2 (en) * | 1998-04-10 | 2004-05-04 | Micron Technology, Inc. | Capacitors and methods of forming capacitors |
US6165834A (en) * | 1998-05-07 | 2000-12-26 | Micron Technology, Inc. | Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell |
US6255186B1 (en) | 1998-05-21 | 2001-07-03 | Micron Technology, Inc. | Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom |
JP2000022105A (ja) * | 1998-06-30 | 2000-01-21 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US7098503B1 (en) * | 1998-08-27 | 2006-08-29 | Micron Technology, Inc. | Circuitry and capacitors comprising roughened platinum layers |
US6583022B1 (en) | 1998-08-27 | 2003-06-24 | Micron Technology, Inc. | Methods of forming roughened layers of platinum and methods of forming capacitors |
DE19849542C2 (de) * | 1998-10-27 | 2002-07-11 | Infineon Technologies Ag | Verfahren zur Herstellung eines Kondensators |
EP1143501A4 (de) * | 1998-12-16 | 2005-02-02 | Tokyo Electron Ltd | Verfahren zur herstellung einer dünnschicht |
JP2000353700A (ja) * | 1999-06-14 | 2000-12-19 | Mitsubishi Electric Corp | 高誘電率薄膜の形成方法および半導体装置の製造方法 |
TW456027B (en) | 1999-08-18 | 2001-09-21 | Matsushita Electronics Corp | Method of making ferroelectric thin film, ferroelectric capacitor, ferroelectric memory and method for fabricating ferroelectric memory |
JP2001077108A (ja) * | 1999-08-31 | 2001-03-23 | Nec Corp | 半導体装置及び複合酸化物薄膜の製造方法 |
TW425711B (en) * | 1999-11-26 | 2001-03-11 | Taiwan Semiconductor Mfg | Manufacturing method for capacitor |
US7005695B1 (en) * | 2000-02-23 | 2006-02-28 | Micron Technology, Inc. | Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region |
US6492242B1 (en) * | 2000-07-03 | 2002-12-10 | Chartered Semiconductor Manufacturing Ltd. | Method of forming of high K metallic dielectric layer |
US6503314B1 (en) * | 2000-08-28 | 2003-01-07 | Sharp Laboratories Of America, Inc. | MOCVD ferroelectric and dielectric thin films depositions using mixed solvents |
KR100399074B1 (ko) * | 2001-04-27 | 2003-09-26 | 주식회사 하이닉스반도체 | 비엘티 강유전체막을 구비하는 강유전체 메모리 소자 제조방법 |
US6576538B2 (en) * | 2001-08-30 | 2003-06-10 | Micron Technology, Inc. | Technique for high efficiency metalorganic chemical vapor deposition |
US7118726B2 (en) | 2002-12-13 | 2006-10-10 | Clark Manufacturing, Llc | Method for making oxide compounds |
US7074719B2 (en) * | 2003-11-28 | 2006-07-11 | International Business Machines Corporation | ALD deposition of ruthenium |
JP4878187B2 (ja) * | 2006-03-20 | 2012-02-15 | 東京エレクトロン株式会社 | 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法 |
WO2010115178A1 (en) * | 2009-04-03 | 2010-10-07 | Board Of Trustees Of The University Of Arkansas | Superhydrophobic surface and method of forming same |
US8389300B2 (en) | 2010-04-02 | 2013-03-05 | Centre National De La Recherche Scientifique | Controlling ferroelectricity in dielectric films by process induced uniaxial strain |
US10100409B2 (en) | 2015-02-11 | 2018-10-16 | United Technologies Corporation | Isothermal warm wall CVD reactor |
JP6467239B2 (ja) * | 2015-02-16 | 2019-02-06 | 東京エレクトロン株式会社 | ルテニウム膜の成膜方法、成膜装置及び半導体装置の製造方法 |
US11430512B2 (en) * | 2020-06-29 | 2022-08-30 | Taiwan Semiconductor Manufacturing Company Limited | Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5527567A (en) * | 1994-09-02 | 1996-06-18 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
US5555486A (en) * | 1994-12-29 | 1996-09-10 | North Carolina State University | Hybrid metal/metal oxide electrodes for ferroelectric capacitors |
JP3363301B2 (ja) * | 1995-03-08 | 2003-01-08 | シャープ株式会社 | 強誘電体薄膜被覆基板及びその製造方法及び強誘電体薄膜被覆基板によって構成された不揮発性メモリ |
KR0161785B1 (ko) * | 1995-04-29 | 1998-12-01 | 주승기 | 강유전체 박막소자의 제조방법 |
US5612560A (en) * | 1995-10-31 | 1997-03-18 | Northern Telecom Limited | Electrode structure for ferroelectric capacitors for integrated circuits |
-
1997
- 1997-12-23 US US08/996,574 patent/US6010744A/en not_active Expired - Lifetime
-
1998
- 1998-12-10 EP EP98963041A patent/EP1042528B1/de not_active Expired - Lifetime
- 1998-12-10 JP JP2000525597A patent/JP2001527281A/ja not_active Withdrawn
- 1998-12-10 KR KR1020007007063A patent/KR20010033554A/ko not_active Application Discontinuation
- 1998-12-10 DE DE69813888T patent/DE69813888T2/de not_active Expired - Fee Related
- 1998-12-10 WO PCT/US1998/026258 patent/WO1999032684A1/en not_active Application Discontinuation
- 1998-12-23 TW TW087121520A patent/TW482827B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO1999032684A1 (en) | 1999-07-01 |
US6010744A (en) | 2000-01-04 |
EP1042528A1 (de) | 2000-10-11 |
TW482827B (en) | 2002-04-11 |
EP1042528B1 (de) | 2003-04-23 |
JP2001527281A (ja) | 2001-12-25 |
DE69813888D1 (de) | 2003-05-28 |
KR20010033554A (ko) | 2001-04-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |