DE69813888D1 - Verfahren zum auftragen ferroelektrischer dünnschichten - Google Patents

Verfahren zum auftragen ferroelektrischer dünnschichten

Info

Publication number
DE69813888D1
DE69813888D1 DE69813888T DE69813888T DE69813888D1 DE 69813888 D1 DE69813888 D1 DE 69813888D1 DE 69813888 T DE69813888 T DE 69813888T DE 69813888 T DE69813888 T DE 69813888T DE 69813888 D1 DE69813888 D1 DE 69813888D1
Authority
DE
Germany
Prior art keywords
thin layers
ferroelectric thin
applying
applying ferroelectric
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69813888T
Other languages
English (en)
Other versions
DE69813888T2 (de
Inventor
Buskirk Peter Van
R Roeder
Frank Hintermaier
Bryan Hendrix
H Baum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Advanced Technology Materials Inc
Original Assignee
Infineon Technologies AG
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG, Advanced Technology Materials Inc filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE69813888D1 publication Critical patent/DE69813888D1/de
Publication of DE69813888T2 publication Critical patent/DE69813888T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/891—Vapor phase deposition
DE69813888T 1997-12-23 1998-12-10 Verfahren zum auftragen ferroelektrischer dünnschichten Expired - Fee Related DE69813888T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/996,574 US6010744A (en) 1997-12-23 1997-12-23 Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films
PCT/US1998/026258 WO1999032684A1 (en) 1997-12-23 1998-12-10 Method for deposition of ferroelectric thin films

Publications (2)

Publication Number Publication Date
DE69813888D1 true DE69813888D1 (de) 2003-05-28
DE69813888T2 DE69813888T2 (de) 2004-01-29

Family

ID=25543072

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69813888T Expired - Fee Related DE69813888T2 (de) 1997-12-23 1998-12-10 Verfahren zum auftragen ferroelektrischer dünnschichten

Country Status (7)

Country Link
US (1) US6010744A (de)
EP (1) EP1042528B1 (de)
JP (1) JP2001527281A (de)
KR (1) KR20010033554A (de)
DE (1) DE69813888T2 (de)
TW (1) TW482827B (de)
WO (1) WO1999032684A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500489B1 (en) * 1996-11-27 2002-12-31 Advanced Technology Materials, Inc. Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides
US5910880A (en) 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US6787186B1 (en) * 1997-12-18 2004-09-07 Advanced Technology Materials, Inc. Method of controlled chemical vapor deposition of a metal oxide ceramic layer
JPH11186523A (ja) * 1997-12-19 1999-07-09 Sharp Corp 絶縁体材料、絶縁膜被覆基板、その製造方法及びその用途
US6162744A (en) * 1998-02-28 2000-12-19 Micron Technology, Inc. Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers
US6191443B1 (en) 1998-02-28 2001-02-20 Micron Technology, Inc. Capacitors, methods of forming capacitors, and DRAM memory cells
US6156638A (en) * 1998-04-10 2000-12-05 Micron Technology, Inc. Integrated circuitry and method of restricting diffusion from one material to another
US6730559B2 (en) 1998-04-10 2004-05-04 Micron Technology, Inc. Capacitors and methods of forming capacitors
US6165834A (en) * 1998-05-07 2000-12-26 Micron Technology, Inc. Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
US6255186B1 (en) 1998-05-21 2001-07-03 Micron Technology, Inc. Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom
JP2000022105A (ja) * 1998-06-30 2000-01-21 Oki Electric Ind Co Ltd 半導体装置の製造方法
US7098503B1 (en) 1998-08-27 2006-08-29 Micron Technology, Inc. Circuitry and capacitors comprising roughened platinum layers
US6583022B1 (en) 1998-08-27 2003-06-24 Micron Technology, Inc. Methods of forming roughened layers of platinum and methods of forming capacitors
DE19849542C2 (de) * 1998-10-27 2002-07-11 Infineon Technologies Ag Verfahren zur Herstellung eines Kondensators
KR100392047B1 (ko) * 1998-12-16 2003-07-23 동경 엘렉트론 주식회사 박막 형성 방법
JP2000353700A (ja) 1999-06-14 2000-12-19 Mitsubishi Electric Corp 高誘電率薄膜の形成方法および半導体装置の製造方法
TW456027B (en) 1999-08-18 2001-09-21 Matsushita Electronics Corp Method of making ferroelectric thin film, ferroelectric capacitor, ferroelectric memory and method for fabricating ferroelectric memory
JP2001077108A (ja) * 1999-08-31 2001-03-23 Nec Corp 半導体装置及び複合酸化物薄膜の製造方法
TW425711B (en) * 1999-11-26 2001-03-11 Taiwan Semiconductor Mfg Manufacturing method for capacitor
US7005695B1 (en) 2000-02-23 2006-02-28 Micron Technology, Inc. Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
US6492242B1 (en) * 2000-07-03 2002-12-10 Chartered Semiconductor Manufacturing Ltd. Method of forming of high K metallic dielectric layer
US6503314B1 (en) * 2000-08-28 2003-01-07 Sharp Laboratories Of America, Inc. MOCVD ferroelectric and dielectric thin films depositions using mixed solvents
KR100399074B1 (ko) * 2001-04-27 2003-09-26 주식회사 하이닉스반도체 비엘티 강유전체막을 구비하는 강유전체 메모리 소자 제조방법
US6576538B2 (en) * 2001-08-30 2003-06-10 Micron Technology, Inc. Technique for high efficiency metalorganic chemical vapor deposition
US7118726B2 (en) 2002-12-13 2006-10-10 Clark Manufacturing, Llc Method for making oxide compounds
US7074719B2 (en) * 2003-11-28 2006-07-11 International Business Machines Corporation ALD deposition of ruthenium
JP4878187B2 (ja) * 2006-03-20 2012-02-15 東京エレクトロン株式会社 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法
WO2010115178A1 (en) * 2009-04-03 2010-10-07 Board Of Trustees Of The University Of Arkansas Superhydrophobic surface and method of forming same
US8389300B2 (en) 2010-04-02 2013-03-05 Centre National De La Recherche Scientifique Controlling ferroelectricity in dielectric films by process induced uniaxial strain
US10100409B2 (en) 2015-02-11 2018-10-16 United Technologies Corporation Isothermal warm wall CVD reactor
JP6467239B2 (ja) * 2015-02-16 2019-02-06 東京エレクトロン株式会社 ルテニウム膜の成膜方法、成膜装置及び半導体装置の製造方法
US11430512B2 (en) * 2020-06-29 2022-08-30 Taiwan Semiconductor Manufacturing Company Limited Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527567A (en) * 1994-09-02 1996-06-18 Ceram Incorporated Metalorganic chemical vapor deposition of layered structure oxides
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
JP3363301B2 (ja) * 1995-03-08 2003-01-08 シャープ株式会社 強誘電体薄膜被覆基板及びその製造方法及び強誘電体薄膜被覆基板によって構成された不揮発性メモリ
KR0161785B1 (ko) * 1995-04-29 1998-12-01 주승기 강유전체 박막소자의 제조방법
US5612560A (en) * 1995-10-31 1997-03-18 Northern Telecom Limited Electrode structure for ferroelectric capacitors for integrated circuits

Also Published As

Publication number Publication date
TW482827B (en) 2002-04-11
EP1042528B1 (de) 2003-04-23
JP2001527281A (ja) 2001-12-25
DE69813888T2 (de) 2004-01-29
WO1999032684A1 (en) 1999-07-01
EP1042528A1 (de) 2000-10-11
US6010744A (en) 2000-01-04
KR20010033554A (ko) 2001-04-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee