DE69813805T2 - Verfahren und vorrichtung zum örtlichen glühen einer auf einem substrat geformten mikrostruktur und dadurch hergestellte vorrichtung - Google Patents

Verfahren und vorrichtung zum örtlichen glühen einer auf einem substrat geformten mikrostruktur und dadurch hergestellte vorrichtung

Info

Publication number
DE69813805T2
DE69813805T2 DE69813805T DE69813805T DE69813805T2 DE 69813805 T2 DE69813805 T2 DE 69813805T2 DE 69813805 T DE69813805 T DE 69813805T DE 69813805 T DE69813805 T DE 69813805T DE 69813805 T2 DE69813805 T2 DE 69813805T2
Authority
DE
Germany
Prior art keywords
microstructure
micromechanical
glowing
local
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69813805T
Other languages
English (en)
Other versions
DE69813805D1 (de
Inventor
T-C Nguyen
Kun Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Michigan
Original Assignee
University of Michigan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Michigan filed Critical University of Michigan
Application granted granted Critical
Publication of DE69813805D1 publication Critical patent/DE69813805D1/de
Publication of DE69813805T2 publication Critical patent/DE69813805T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02244Details of microelectro-mechanical resonators
    • H03H9/02393Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
    • H03H9/02401Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor by annealing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
DE69813805T 1997-06-13 1998-05-29 Verfahren und vorrichtung zum örtlichen glühen einer auf einem substrat geformten mikrostruktur und dadurch hergestellte vorrichtung Expired - Lifetime DE69813805T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/874,785 US5976994A (en) 1997-06-13 1997-06-13 Method and system for locally annealing a microstructure formed on a substrate and device formed thereby
PCT/US1998/011028 WO1998057423A1 (en) 1997-06-13 1998-05-29 Method and system for locally annealing a microstructure formed on a substrate and device formed thereby

Publications (2)

Publication Number Publication Date
DE69813805D1 DE69813805D1 (de) 2003-05-28
DE69813805T2 true DE69813805T2 (de) 2003-11-06

Family

ID=25364575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69813805T Expired - Lifetime DE69813805T2 (de) 1997-06-13 1998-05-29 Verfahren und vorrichtung zum örtlichen glühen einer auf einem substrat geformten mikrostruktur und dadurch hergestellte vorrichtung

Country Status (10)

Country Link
US (2) US5976994A (de)
EP (1) EP0988695B1 (de)
JP (2) JP2002505046A (de)
KR (1) KR100370602B1 (de)
CN (1) CN1271474A (de)
AT (1) ATE238630T1 (de)
AU (1) AU7605098A (de)
DE (1) DE69813805T2 (de)
NO (1) NO996113L (de)
WO (1) WO1998057423A1 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593831B2 (en) 1999-01-14 2003-07-15 The Regents Of The University Of Michigan Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus
US6713938B2 (en) 1999-01-14 2004-03-30 The Regents Of The University Of Michigan Method and apparatus for filtering signals utilizing a vibrating micromechanical resonator
US6566786B2 (en) 1999-01-14 2003-05-20 The Regents Of The University Of Michigan Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus
US6577040B2 (en) 1999-01-14 2003-06-10 The Regents Of The University Of Michigan Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices
US6424074B2 (en) 1999-01-14 2002-07-23 The Regents Of The University Of Michigan Method and apparatus for upconverting and filtering an information signal utilizing a vibrating micromechanical device
US6600252B2 (en) 1999-01-14 2003-07-29 The Regents Of The University Of Michigan Method and subsystem for processing signals utilizing a plurality of vibrating micromechanical devices
US6238946B1 (en) * 1999-08-17 2001-05-29 International Business Machines Corporation Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing
US6346030B1 (en) * 2000-05-09 2002-02-12 Sandia Corporation Microdevice having interior cavity with high aspect ratio surface features and associated methods of manufacture and use
US6739190B2 (en) * 2000-08-24 2004-05-25 The Regents Of The University Of Michigan Micromechanical resonator device
DE10065723A1 (de) * 2000-12-29 2002-07-04 Bosch Gmbh Robert Anordnung zur Temperaturmessung und -regelung
US6568264B2 (en) * 2001-02-23 2003-05-27 Charles E. Heger Wireless swimming pool water level system
US6600389B2 (en) * 2001-05-30 2003-07-29 Intel Corporation Tapered structures for generating a set of resonators with systematic resonant frequencies
US6570468B2 (en) * 2001-06-29 2003-05-27 Intel Corporation Resonator frequency correction by modifying support structures
EP1876608A3 (de) * 2001-09-10 2008-04-16 Microbridge Technologies Inc. Verfahren zum effektiven Abgleichen von Widerständen mittels gepulster Erwärmung
AU2002325723A1 (en) * 2001-09-10 2003-03-24 Microbridge Technologies Inc. Method for trimming resistors
US6630871B2 (en) * 2001-09-28 2003-10-07 Intel Corporation Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator
US7004015B2 (en) * 2001-10-25 2006-02-28 The Regents Of The University Of Michigan Method and system for locally sealing a vacuum microcavity, methods and systems for monitoring and controlling pressure and method and system for trimming resonant frequency of a microstructure therein
DE10156257A1 (de) 2001-11-09 2003-05-28 Bosch Gmbh Robert Mikromechanischer Resonator
US6605319B1 (en) * 2002-02-11 2003-08-12 Applied Materials, Inc. Use of integrated polygen deposition and RTP for microelectromechanical systems
US7029829B2 (en) * 2002-04-18 2006-04-18 The Regents Of The University Of Michigan Low temperature method for forming a microcavity on a substrate and article having same
US7025778B2 (en) * 2002-06-07 2006-04-11 Endovascular Technologies, Inc. Endovascular graft with pressure, temperature, flow and voltage sensors
US7261733B1 (en) * 2002-06-07 2007-08-28 Endovascular Technologies, Inc. Endovascular graft with sensors design and attachment methods
US7399313B2 (en) 2002-06-07 2008-07-15 Brown Peter S Endovascular graft with separable sensors
WO2004013893A2 (en) * 2002-08-01 2004-02-12 Georgia Tech Research Corporation Piezo electric on seminconductor on- insulator resonator
AU2003290513A1 (en) * 2002-08-07 2004-04-08 Georgia Tech Research Corporation Capacitive resonators and methods of fabrication
JP4189637B2 (ja) * 2002-09-19 2008-12-03 日本電気株式会社 フィルタ、複合フィルタ、それらを搭載したフィルタ実装体、集積回路チップ、電子機器およびそれらの周波数特性変更方法
US6930569B2 (en) * 2003-07-31 2005-08-16 Discera Micromechanical resonator having short support beams
US6870444B1 (en) * 2003-08-28 2005-03-22 Motorola, Inc. Electromechanical resonator and method of operating same
JP2007505543A (ja) * 2003-09-10 2007-03-08 コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ. 電気機械的トランスデューサおよび電気装置
US6995622B2 (en) 2004-01-09 2006-02-07 Robert Bosh Gmbh Frequency and/or phase compensated microelectromechanical oscillator
US7068125B2 (en) * 2004-03-04 2006-06-27 Robert Bosch Gmbh Temperature controlled MEMS resonator and method for controlling resonator frequency
US7102467B2 (en) * 2004-04-28 2006-09-05 Robert Bosch Gmbh Method for adjusting the frequency of a MEMS resonator
US7256107B2 (en) * 2004-05-04 2007-08-14 The Regents Of The University Of California Damascene process for use in fabricating semiconductor structures having micro/nano gaps
JP4611127B2 (ja) * 2004-06-14 2011-01-12 パナソニック株式会社 電気機械信号選択素子
US7176770B2 (en) * 2004-08-24 2007-02-13 Georgia Tech Research Corp. Capacitive vertical silicon bulk acoustic resonator
US7918800B1 (en) * 2004-10-08 2011-04-05 Endovascular Technologies, Inc. Aneurysm sensing devices and delivery systems
KR100610016B1 (ko) * 2004-11-18 2006-08-08 삼성전자주식회사 반도체 디바이스 제조를 위한 불순물 원자 활성화 장치 및그 방법
US7205867B2 (en) * 2005-05-19 2007-04-17 Robert Bosch Gmbh Microelectromechanical resonator structure, and method of designing, operating and using same
US7337671B2 (en) 2005-06-03 2008-03-04 Georgia Tech Research Corp. Capacitive microaccelerometers and fabrication methods
WO2007037150A1 (ja) * 2005-09-27 2007-04-05 Matsushita Electric Industrial Co., Ltd. 共振器及びこれを用いたフィルタ
US7578189B1 (en) 2006-05-10 2009-08-25 Qualtre, Inc. Three-axis accelerometers
US7767484B2 (en) 2006-05-31 2010-08-03 Georgia Tech Research Corporation Method for sealing and backside releasing of microelectromechanical systems
US20080054759A1 (en) * 2006-08-11 2008-03-06 Farrokh Ayazi Wafer-level encapsulation and sealing of electrostatic transducers
JP4977431B2 (ja) * 2006-10-12 2012-07-18 三洋電機株式会社 マイクロメカニカル共振器
JP4965962B2 (ja) * 2006-10-13 2012-07-04 学校法人立命館 マイクロメカニカル共振器
JP4337870B2 (ja) * 2006-12-15 2009-09-30 セイコーエプソン株式会社 Memsレゾネータ及びmemsレゾネータの製造方法
JP2009060173A (ja) * 2007-08-29 2009-03-19 Seiko Instruments Inc 発振子及び該発振子を有する発振器
JP5039959B2 (ja) * 2007-08-31 2012-10-03 セイコーインスツル株式会社 発振器
JP4995675B2 (ja) * 2007-09-10 2012-08-08 セイコーインスツル株式会社 振動子デバイス及び発振器
JP2009088854A (ja) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd マイクロメカニカル共振器およびその製造方法
WO2011026100A1 (en) 2009-08-31 2011-03-03 Georgia Tech Research Corporation Bulk acoustic wave gyroscope with spoked structure
US8686508B2 (en) * 2009-09-03 2014-04-01 International Business Machines Corporation Structures, methods and applications for electrical pulse anneal processes
US8542074B2 (en) 2010-05-26 2013-09-24 Panasonic Corporation MEMS resonator
TWI511916B (zh) 2012-06-28 2015-12-11 Nat Univ Tsing Hua 微機電共振震盪子結構及其驅動方法
US9584092B2 (en) * 2015-04-14 2017-02-28 International Business Machines Corporation Mechanical resonator with a spring-mass system comprising a phase-change material
EP3311486B1 (de) * 2015-06-19 2020-12-02 SiTime Corporation Mikroelektromechanischer resonator
US10148244B1 (en) * 2015-09-15 2018-12-04 National Technology & Engineering Solutions Of Sandia, Llc Trimming method for microresonators and microresonators made thereby

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144184A (en) * 1990-01-26 1992-09-01 The Charles Stark Draper Laboratory, Inc. Micromechanical device with a trimmable resonant frequency structure and method of trimming same
US5188983A (en) * 1990-04-11 1993-02-23 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers and method of producing the same
US5451525A (en) * 1992-02-14 1995-09-19 Coulter Corporation Method and materials for determining particle count in a flow cytometer
US5645684A (en) * 1994-03-07 1997-07-08 The Regents Of The University Of California Multilayer high vertical aspect ratio thin film structures
DE4417132C2 (de) * 1994-05-17 1996-08-14 Ibm Resonanter Meßwertaufnehmer und dessen Verwendung
US5451425A (en) * 1994-09-13 1995-09-19 The United States Of America As Represented By The Secretary Of The Army Process for setting the frequency of a silicon microresonator
US5530342A (en) * 1994-09-30 1996-06-25 Rockwell International Corporation Micromachined rate sensor comb drive device and method
US5696491A (en) * 1995-06-07 1997-12-09 Regents Of The University Of California Self-excited microelectromechanical device
US5696591A (en) 1996-01-05 1997-12-09 Eastman Kodak Company Apparatus and method for detecting longitudinally oriented flaws in a moving web
JP3604259B2 (ja) 1997-06-12 2004-12-22 株式会社東芝 燃料交換機及びその制御装置
US5870007A (en) * 1997-06-16 1999-02-09 Roxburgh Ltd. Multi-dimensional physical actuation of microstructures

Also Published As

Publication number Publication date
US5976994A (en) 1999-11-02
EP0988695A1 (de) 2000-03-29
KR100370602B1 (ko) 2003-02-05
WO1998057423A1 (en) 1998-12-17
JP2009044741A (ja) 2009-02-26
EP0988695B1 (de) 2003-04-23
ATE238630T1 (de) 2003-05-15
CN1271474A (zh) 2000-10-25
KR20010013636A (ko) 2001-02-26
NO996113D0 (no) 1999-12-10
US6169321B1 (en) 2001-01-02
JP2002505046A (ja) 2002-02-12
AU7605098A (en) 1998-12-30
DE69813805D1 (de) 2003-05-28
NO996113L (no) 2000-02-07

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