DE69813701D1 - Elektrodenstruktur einer Siliziumhalbleiteranordnung - Google Patents
Elektrodenstruktur einer SiliziumhalbleiteranordnungInfo
- Publication number
- DE69813701D1 DE69813701D1 DE69813701T DE69813701T DE69813701D1 DE 69813701 D1 DE69813701 D1 DE 69813701D1 DE 69813701 T DE69813701 T DE 69813701T DE 69813701 T DE69813701 T DE 69813701T DE 69813701 D1 DE69813701 D1 DE 69813701D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- electrode structure
- silicon semiconductor
- silicon
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24339797 | 1997-08-25 | ||
JP24339797 | 1997-08-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69813701D1 true DE69813701D1 (de) | 2003-05-28 |
DE69813701T2 DE69813701T2 (de) | 2004-03-11 |
Family
ID=17103265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69813701T Expired - Lifetime DE69813701T2 (de) | 1997-08-25 | 1998-08-24 | Elektrodenstruktur einer Siliziumhalbleiteranordnung |
Country Status (5)
Country | Link |
---|---|
US (2) | US5982629A (de) |
EP (1) | EP0899786B1 (de) |
KR (1) | KR100300462B1 (de) |
DE (1) | DE69813701T2 (de) |
TW (1) | TW453137B (de) |
Families Citing this family (25)
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JP3268386B2 (ja) * | 1998-06-29 | 2002-03-25 | 日本航空電子工業株式会社 | 腐食防止膜の形成方法 |
JP3678048B2 (ja) * | 1999-04-05 | 2005-08-03 | 松下電器産業株式会社 | 半田プリコート方法および半田プリコート基板 |
US6402012B1 (en) * | 1999-11-08 | 2002-06-11 | Delphi Technologies, Inc. | Method for forming solder bumps using a solder jetting device |
SG99331A1 (en) | 2000-01-13 | 2003-10-27 | Hitachi Ltd | Method of producing electronic part with bumps and method of producing elctronic part |
JP3952434B2 (ja) * | 2000-03-29 | 2007-08-01 | ローム株式会社 | 電池パックおよびその製造方法 |
WO2001078931A1 (fr) * | 2000-04-17 | 2001-10-25 | Fujitsu Limited | Assemblage par brasure |
JP3968554B2 (ja) * | 2000-05-01 | 2007-08-29 | セイコーエプソン株式会社 | バンプの形成方法及び半導体装置の製造方法 |
JP3687610B2 (ja) * | 2002-01-18 | 2005-08-24 | セイコーエプソン株式会社 | 半導体装置、回路基板及び電子機器 |
US7341947B2 (en) * | 2002-03-29 | 2008-03-11 | Micron Technology, Inc. | Methods of forming metal-containing films over surfaces of semiconductor substrates |
US6653236B2 (en) * | 2002-03-29 | 2003-11-25 | Micron Technology, Inc. | Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions |
JP3565835B1 (ja) * | 2003-04-28 | 2004-09-15 | 松下電器産業株式会社 | 配線基板およびその製造方法ならびに半導体装置およびその製造方法 |
JP2006032446A (ja) * | 2004-07-13 | 2006-02-02 | Toshiba Corp | 半導体部品の実装方法および実装装置 |
US7897452B2 (en) * | 2005-06-20 | 2011-03-01 | Fuji Electric Systems Co., Ltd. | Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode |
TW200713472A (en) * | 2005-09-19 | 2007-04-01 | Analog Integrations Corp | Polymer material and local connection structure of chip |
US7422973B2 (en) * | 2006-01-27 | 2008-09-09 | Freescale Semiconductor, Inc. | Method for forming multi-layer bumps on a substrate |
JP4839138B2 (ja) * | 2006-06-20 | 2011-12-21 | 新光電気工業株式会社 | 配線基板の製造方法 |
US7600667B2 (en) * | 2006-09-29 | 2009-10-13 | Intel Corporation | Method of assembling carbon nanotube reinforced solder caps |
US20080079175A1 (en) * | 2006-10-02 | 2008-04-03 | Michael Bauer | Layer for chip contact element |
US8264072B2 (en) | 2007-10-22 | 2012-09-11 | Infineon Technologies Ag | Electronic device |
US20100032194A1 (en) * | 2008-08-08 | 2010-02-11 | Ibiden Co., Ltd. | Printed wiring board, manufacturing method for printed wiring board and electronic device |
JP5456545B2 (ja) * | 2009-04-28 | 2014-04-02 | 昭和電工株式会社 | 回路基板の製造方法 |
US8378485B2 (en) * | 2009-07-13 | 2013-02-19 | Lsi Corporation | Solder interconnect by addition of copper |
HUE034429T2 (en) * | 2009-09-15 | 2018-02-28 | Toshiba Kk | Ceramic circuit board and method for producing it |
US9330993B2 (en) * | 2012-12-20 | 2016-05-03 | Intel Corporation | Methods of promoting adhesion between underfill and conductive bumps and structures formed thereby |
US10695875B2 (en) * | 2018-03-19 | 2020-06-30 | Asia Vital Components Co., Ltd. | Soldering method of soldering jig |
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DE2032872B2 (de) * | 1970-07-02 | 1975-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse |
US4505029A (en) * | 1981-03-23 | 1985-03-19 | General Electric Company | Semiconductor device with built-up low resistance contact |
US4950623A (en) * | 1988-08-02 | 1990-08-21 | Microelectronics Center Of North Carolina | Method of building solder bumps |
JPH0267731A (ja) * | 1988-09-02 | 1990-03-07 | Toshiba Corp | はんだバンプ形半導体装置とその製造方法 |
US5272376A (en) * | 1990-06-01 | 1993-12-21 | Clarion Co., Ltd. | Electrode structure for a semiconductor device |
JP3141364B2 (ja) * | 1992-05-06 | 2001-03-05 | 住友電気工業株式会社 | 半導体チップ |
JP2592757B2 (ja) * | 1992-10-30 | 1997-03-19 | 昭和電工株式会社 | はんだ回路基板及びその形成方法 |
US5556023A (en) * | 1992-10-30 | 1996-09-17 | Showa Denko K.K. | Method of forming solder film |
JP3361881B2 (ja) * | 1994-04-28 | 2003-01-07 | 株式会社東芝 | 半導体装置とその製造方法 |
JP3238011B2 (ja) * | 1994-07-27 | 2001-12-10 | 株式会社東芝 | 半導体装置 |
US5539153A (en) * | 1994-08-08 | 1996-07-23 | Hewlett-Packard Company | Method of bumping substrates by contained paste deposition |
US5601459A (en) * | 1994-09-29 | 1997-02-11 | North American Specialties Corporation | Solder bearing lead and method of fabrication |
US5656858A (en) * | 1994-10-19 | 1997-08-12 | Nippondenso Co., Ltd. | Semiconductor device with bump structure |
JP3217624B2 (ja) * | 1994-11-12 | 2001-10-09 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置 |
KR100349896B1 (ko) * | 1994-12-28 | 2002-12-26 | 삼성에스디아이 주식회사 | 집적회로칩의실장구조체및그실장방법 |
US5889326A (en) * | 1996-02-27 | 1999-03-30 | Nec Corporation | Structure for bonding semiconductor device to substrate |
KR100216839B1 (ko) * | 1996-04-01 | 1999-09-01 | 김규현 | Bga 반도체 패키지의 솔더 볼 랜드 메탈 구조 |
-
1998
- 1998-06-25 TW TW087110259A patent/TW453137B/zh not_active IP Right Cessation
- 1998-07-09 KR KR1019980027609A patent/KR100300462B1/ko not_active IP Right Cessation
- 1998-08-24 EP EP98306749A patent/EP0899786B1/de not_active Expired - Lifetime
- 1998-08-24 DE DE69813701T patent/DE69813701T2/de not_active Expired - Lifetime
- 1998-08-25 US US09/139,562 patent/US5982629A/en not_active Expired - Lifetime
-
1999
- 1999-08-25 US US09/382,673 patent/US6221692B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6221692B1 (en) | 2001-04-24 |
EP0899786A2 (de) | 1999-03-03 |
EP0899786A3 (de) | 2000-01-19 |
EP0899786B1 (de) | 2003-04-23 |
TW453137B (en) | 2001-09-01 |
KR19990023187A (ko) | 1999-03-25 |
KR100300462B1 (ko) | 2001-10-19 |
DE69813701T2 (de) | 2004-03-11 |
US5982629A (en) | 1999-11-09 |
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