DE69811125T2 - Monolithische Mehrfachanordnung von oberflächenemittierenden Halbleiterlasern mit vertikalem Resonator und unterschiedlichen Wellenlängen - Google Patents

Monolithische Mehrfachanordnung von oberflächenemittierenden Halbleiterlasern mit vertikalem Resonator und unterschiedlichen Wellenlängen

Info

Publication number
DE69811125T2
DE69811125T2 DE69811125T DE69811125T DE69811125T2 DE 69811125 T2 DE69811125 T2 DE 69811125T2 DE 69811125 T DE69811125 T DE 69811125T DE 69811125 T DE69811125 T DE 69811125T DE 69811125 T2 DE69811125 T2 DE 69811125T2
Authority
DE
Germany
Prior art keywords
different wavelengths
surface emitting
emitting semiconductor
semiconductor lasers
multiple arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69811125T
Other languages
English (en)
Other versions
DE69811125D1 (de
Inventor
Brian E Lemoff
Dubravko Babic
Richard P Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of DE69811125D1 publication Critical patent/DE69811125D1/de
Application granted granted Critical
Publication of DE69811125T2 publication Critical patent/DE69811125T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
DE69811125T 1998-04-10 1998-10-22 Monolithische Mehrfachanordnung von oberflächenemittierenden Halbleiterlasern mit vertikalem Resonator und unterschiedlichen Wellenlängen Expired - Fee Related DE69811125T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/058,532 US6117699A (en) 1998-04-10 1998-04-10 Monolithic multiple wavelength VCSEL array

Publications (2)

Publication Number Publication Date
DE69811125D1 DE69811125D1 (de) 2003-03-06
DE69811125T2 true DE69811125T2 (de) 2003-10-09

Family

ID=22017401

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69806895T Expired - Fee Related DE69806895T2 (de) 1998-04-10 1998-10-22 Monolithische Mehrfachanordnung von oberflächenemittierenden Halbleiterlasern mit vertikalen Resonatoren und unterschiedlichen Wellenlängen
DE69811125T Expired - Fee Related DE69811125T2 (de) 1998-04-10 1998-10-22 Monolithische Mehrfachanordnung von oberflächenemittierenden Halbleiterlasern mit vertikalem Resonator und unterschiedlichen Wellenlängen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69806895T Expired - Fee Related DE69806895T2 (de) 1998-04-10 1998-10-22 Monolithische Mehrfachanordnung von oberflächenemittierenden Halbleiterlasern mit vertikalen Resonatoren und unterschiedlichen Wellenlängen

Country Status (4)

Country Link
US (2) US6117699A (de)
EP (2) EP0949728B1 (de)
JP (1) JPH11330631A (de)
DE (2) DE69806895T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008038804A1 (de) * 2008-08-13 2010-02-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaserchip und Laseranordnung mit einem oberflächenemittierenden Halbleiterchip

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US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
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US6636544B2 (en) 2000-12-06 2003-10-21 Applied Optoelectronics, Inc. Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays
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US10868407B2 (en) * 2015-06-04 2020-12-15 Hewlett Packard Enterprise Development Lp Monolithic WDM VCSELS with spatially varying gain peak and fabry perot wavelength
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CN109923468A (zh) * 2016-12-05 2019-06-21 歌尔股份有限公司 微激光二极管显示装置和电子设备
CN112531463B (zh) * 2017-01-16 2024-03-26 苹果公司 在同一基板上组合不同散度的发光元件
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US10361539B2 (en) * 2017-04-17 2019-07-23 The Regents Of The University Of California Air-cavity dominant vertical cavity surface emitting lasers
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008038804A1 (de) * 2008-08-13 2010-02-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaserchip und Laseranordnung mit einem oberflächenemittierenden Halbleiterchip

Also Published As

Publication number Publication date
DE69811125D1 (de) 2003-03-06
EP1100168A1 (de) 2001-05-16
JPH11330631A (ja) 1999-11-30
EP0949728B1 (de) 2002-07-31
US6117699A (en) 2000-09-12
DE69806895T2 (de) 2002-11-28
EP1100168B1 (de) 2003-01-29
US6259121B1 (en) 2001-07-10
EP0949728A1 (de) 1999-10-13
DE69806895D1 (de) 2002-09-05

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