DE69810374D1 - Vorrichtung und Verfahren zur Verhinderung von Kondensation in einer Abgasleitung - Google Patents
Vorrichtung und Verfahren zur Verhinderung von Kondensation in einer AbgasleitungInfo
- Publication number
- DE69810374D1 DE69810374D1 DE69810374T DE69810374T DE69810374D1 DE 69810374 D1 DE69810374 D1 DE 69810374D1 DE 69810374 T DE69810374 T DE 69810374T DE 69810374 T DE69810374 T DE 69810374T DE 69810374 D1 DE69810374 D1 DE 69810374D1
- Authority
- DE
- Germany
- Prior art keywords
- exhaust pipe
- preventing condensation
- condensation
- preventing
- exhaust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/835,955 US6153260A (en) | 1997-04-11 | 1997-04-11 | Method for heating exhaust gas in a substrate reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69810374D1 true DE69810374D1 (de) | 2003-02-06 |
Family
ID=25270882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69810374T Expired - Lifetime DE69810374D1 (de) | 1997-04-11 | 1998-04-14 | Vorrichtung und Verfahren zur Verhinderung von Kondensation in einer Abgasleitung |
Country Status (5)
Country | Link |
---|---|
US (2) | US6153260A (de) |
EP (1) | EP0870852B1 (de) |
JP (1) | JP4219441B2 (de) |
KR (1) | KR19980081271A (de) |
DE (1) | DE69810374D1 (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1082625C (zh) * | 1999-07-07 | 2002-04-10 | 张建辉 | 一种带有三通式出入口的压电陶瓷泵 |
US6494959B1 (en) | 2000-01-28 | 2002-12-17 | Applied Materials, Inc. | Process and apparatus for cleaning a silicon surface |
US6802906B2 (en) * | 2000-07-21 | 2004-10-12 | Applied Materials, Inc. | Emissivity-change-free pumping plate kit in a single wafer chamber |
US6455814B1 (en) * | 2001-11-07 | 2002-09-24 | Applied Materials, Inc. | Backside heating chamber for emissivity independent thermal processes |
JP3758579B2 (ja) * | 2002-01-23 | 2006-03-22 | 信越半導体株式会社 | 熱処理装置および熱処理方法 |
JP4379585B2 (ja) * | 2003-12-17 | 2009-12-09 | 信越半導体株式会社 | 気相成長装置およびエピタキシャルウェーハの製造方法 |
KR100865580B1 (ko) * | 2004-06-15 | 2008-10-28 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판처리장치 및 반도체장치의 제조방법 |
US7648578B1 (en) | 2004-06-15 | 2010-01-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, and method for manufacturing semiconductor device |
GB0521944D0 (en) * | 2005-10-27 | 2005-12-07 | Boc Group Plc | Method of treating gas |
JP4779644B2 (ja) * | 2005-12-27 | 2011-09-28 | 株式会社Sumco | エピタキシャル装置 |
US20070267143A1 (en) * | 2006-05-16 | 2007-11-22 | Applied Materials, Inc. | In situ cleaning of CVD system exhaust |
WO2008064077A2 (en) | 2006-11-22 | 2008-05-29 | S.O.I.Tec Silicon On Insulator Technologies | Methods for high volume manufacture of group iii-v semiconductor materials |
JP5244814B2 (ja) | 2006-11-22 | 2013-07-24 | ソイテック | 化学気相成長チャンバ用の温度制御されたパージゲート弁を使用した方法、アセンブリ及びシステム |
US9481944B2 (en) | 2006-11-22 | 2016-11-01 | Soitec | Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same |
US8197597B2 (en) | 2006-11-22 | 2012-06-12 | Soitec | Gallium trichloride injection scheme |
WO2008127425A2 (en) | 2006-11-22 | 2008-10-23 | S.O.I.Tec Silicon On Insulator Technologies | Abatement of reaction gases from gallium nitride deposition |
US9481943B2 (en) | 2006-11-22 | 2016-11-01 | Soitec | Gallium trichloride injection scheme |
WO2008064109A2 (en) | 2006-11-22 | 2008-05-29 | S.O.I.Tec Silicon On Insulator Technologies | Equipment for high volume manufacture of group iii-v semiconductor materials |
US20080220150A1 (en) * | 2007-03-05 | 2008-09-11 | Applied Materials, Inc. | Microbatch deposition chamber with radiant heating |
JP5104250B2 (ja) * | 2007-11-27 | 2012-12-19 | 住友電気工業株式会社 | 半導体製造装置 |
JP5195175B2 (ja) * | 2008-08-29 | 2013-05-08 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5276388B2 (ja) * | 2008-09-04 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置及び基板処理装置 |
JP5276387B2 (ja) * | 2008-09-04 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
US8425977B2 (en) * | 2008-09-29 | 2013-04-23 | Applied Materials, Inc. | Substrate processing chamber with off-center gas delivery funnel |
KR101537215B1 (ko) * | 2008-10-27 | 2015-07-20 | 주성엔지니어링(주) | 기판처리장치 |
JP5218148B2 (ja) * | 2009-02-26 | 2013-06-26 | 住友電気工業株式会社 | 半導体製造装置 |
CN102422393A (zh) * | 2009-03-16 | 2012-04-18 | 奥塔装置公司 | 用于气相沉积的淋喷头 |
JP5276679B2 (ja) * | 2011-02-01 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置 |
CN103430285B (zh) * | 2011-03-22 | 2016-06-01 | 应用材料公司 | 用于化学气相沉积腔室的衬里组件 |
DE102011007632B3 (de) | 2011-04-18 | 2012-02-16 | Siltronic Ag | Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe |
US9512520B2 (en) * | 2011-04-25 | 2016-12-06 | Applied Materials, Inc. | Semiconductor substrate processing system |
US9499905B2 (en) * | 2011-07-22 | 2016-11-22 | Applied Materials, Inc. | Methods and apparatus for the deposition of materials on a substrate |
US9682398B2 (en) * | 2012-03-30 | 2017-06-20 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
US20130284097A1 (en) * | 2012-04-25 | 2013-10-31 | Joseph M. Ranish | Gas distribution module for insertion in lateral flow chambers |
US9870919B2 (en) | 2012-04-25 | 2018-01-16 | Applied Materials, Inc. | Process chamber having separate process gas and purge gas regions |
US20140116336A1 (en) * | 2012-10-26 | 2014-05-01 | Applied Materials, Inc. | Substrate process chamber exhaust |
US9322097B2 (en) * | 2013-03-13 | 2016-04-26 | Applied Materials, Inc. | EPI base ring |
CN107557758A (zh) * | 2013-05-01 | 2018-01-09 | 应用材料公司 | 用于控制外延沉积腔室流量的注入及排放设计 |
US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
US11414759B2 (en) * | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
US10053777B2 (en) * | 2014-03-19 | 2018-08-21 | Applied Materials, Inc. | Thermal processing chamber |
WO2015195256A1 (en) * | 2014-06-18 | 2015-12-23 | Applied Materials, Inc. | One-piece injector assembly |
US10446420B2 (en) * | 2016-08-19 | 2019-10-15 | Applied Materials, Inc. | Upper cone for epitaxy chamber |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
CN109811406B (zh) * | 2017-11-20 | 2021-09-17 | 北京北方华创微电子装备有限公司 | 石英件、工艺腔室和半导体处理设备 |
JP6998839B2 (ja) * | 2018-06-25 | 2022-01-18 | グローバルウェーハズ・ジャパン株式会社 | エピタキシャルシリコンウェーハの製造方法 |
EP3957776A1 (de) | 2020-08-17 | 2022-02-23 | Siltronic AG | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe |
EP3996130B1 (de) | 2020-11-09 | 2023-03-08 | Siltronic AG | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe |
US20220322492A1 (en) * | 2021-04-06 | 2022-10-06 | Applied Materials, Inc. | Epitaxial deposition chamber |
CN113249707A (zh) * | 2021-04-21 | 2021-08-13 | 拓荆科技股份有限公司 | 一种薄膜沉积装置和薄膜沉积方法 |
US20220364229A1 (en) * | 2021-05-11 | 2022-11-17 | Applied Materials, Inc. | Multi-port exhaust system for epitaxial deposition chamber |
KR20230012803A (ko) * | 2021-07-16 | 2023-01-26 | 주성엔지니어링(주) | 기판처리장치용 상부돔 및 기판처리장치 |
Family Cites Families (17)
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JPS62133073A (ja) * | 1985-12-05 | 1987-06-16 | Anelva Corp | 減圧気相成長装置 |
JPS62224677A (ja) * | 1986-03-26 | 1987-10-02 | Toshiba Corp | 薄膜形成装置及び薄膜形成方法 |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
US5108792A (en) * | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
US5447570A (en) | 1990-04-23 | 1995-09-05 | Genus, Inc. | Purge gas in wafer coating area selection |
US5094885A (en) * | 1990-10-12 | 1992-03-10 | Genus, Inc. | Differential pressure cvd chuck |
US5578532A (en) * | 1990-07-16 | 1996-11-26 | Novellus Systems, Inc. | Wafer surface protection in a gas deposition process |
US5133284A (en) * | 1990-07-16 | 1992-07-28 | National Semiconductor Corp. | Gas-based backside protection during substrate processing |
US5275976A (en) * | 1990-12-27 | 1994-01-04 | Texas Instruments Incorporated | Process chamber purge module for semiconductor processing equipment |
DE4142877A1 (de) * | 1990-12-28 | 1992-07-02 | Mitsubishi Electric Corp | Cvd-verfahren und vorrichtung zu dessen durchfuehrung |
SE9200808L (sv) * | 1992-03-17 | 1993-05-10 | Kamyr Ab | Silanordning med backspolningsorgan |
EP0606751B1 (de) * | 1993-01-13 | 2002-03-06 | Applied Materials, Inc. | Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung |
US5326725A (en) * | 1993-03-11 | 1994-07-05 | Applied Materials, Inc. | Clamping ring and susceptor therefor |
US5800686A (en) * | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
JP2934565B2 (ja) * | 1993-05-21 | 1999-08-16 | 三菱電機株式会社 | 半導体製造装置及び半導体製造方法 |
GB9411911D0 (en) * | 1994-06-14 | 1994-08-03 | Swan Thomas & Co Ltd | Improvements in or relating to chemical vapour deposition |
US5614247A (en) * | 1994-09-30 | 1997-03-25 | International Business Machines Corporation | Apparatus for chemical vapor deposition of aluminum oxide |
-
1997
- 1997-04-11 US US08/835,955 patent/US6153260A/en not_active Expired - Lifetime
-
1998
- 1998-04-10 JP JP13733098A patent/JP4219441B2/ja not_active Expired - Lifetime
- 1998-04-10 KR KR1019980012723A patent/KR19980081271A/ko not_active Application Discontinuation
- 1998-04-14 EP EP98302858A patent/EP0870852B1/de not_active Expired - Lifetime
- 1998-04-14 DE DE69810374T patent/DE69810374D1/de not_active Expired - Lifetime
-
2000
- 2000-08-25 US US09/650,098 patent/US6254686B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0870852A1 (de) | 1998-10-14 |
US6254686B1 (en) | 2001-07-03 |
JP4219441B2 (ja) | 2009-02-04 |
KR19980081271A (ko) | 1998-11-25 |
EP0870852B1 (de) | 2003-01-02 |
JPH1145861A (ja) | 1999-02-16 |
US6153260A (en) | 2000-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |