DE69803377T2 - Verfahren zur herstellung eines mikrosensors mit mikrogefertigtem silizium - Google Patents

Verfahren zur herstellung eines mikrosensors mit mikrogefertigtem silizium

Info

Publication number
DE69803377T2
DE69803377T2 DE69803377T DE69803377T DE69803377T2 DE 69803377 T2 DE69803377 T2 DE 69803377T2 DE 69803377 T DE69803377 T DE 69803377T DE 69803377 T DE69803377 T DE 69803377T DE 69803377 T2 DE69803377 T2 DE 69803377T2
Authority
DE
Germany
Prior art keywords
microsensor
micro
producing
made silicon
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69803377T
Other languages
English (en)
Other versions
DE69803377D1 (de
Inventor
Olivier Lefort
Isabelle Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales Avionics SAS
Original Assignee
Thales Avionics SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales Avionics SAS filed Critical Thales Avionics SAS
Publication of DE69803377D1 publication Critical patent/DE69803377D1/de
Application granted granted Critical
Publication of DE69803377T2 publication Critical patent/DE69803377T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
    • B81C2201/053—Depositing a protective layers
DE69803377T 1997-05-23 1998-05-19 Verfahren zur herstellung eines mikrosensors mit mikrogefertigtem silizium Expired - Fee Related DE69803377T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9706333A FR2763745B1 (fr) 1997-05-23 1997-05-23 Procede de fabrication d'un micro-capteur en silicium usine
PCT/FR1998/000998 WO1998053483A1 (fr) 1997-05-23 1998-05-19 Procede de fabrication d'un micro-capteur en silicium usine

Publications (2)

Publication Number Publication Date
DE69803377D1 DE69803377D1 (de) 2002-02-28
DE69803377T2 true DE69803377T2 (de) 2002-09-26

Family

ID=9507181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69803377T Expired - Fee Related DE69803377T2 (de) 1997-05-23 1998-05-19 Verfahren zur herstellung eines mikrosensors mit mikrogefertigtem silizium

Country Status (6)

Country Link
US (1) US6251698B1 (de)
EP (1) EP0983609B1 (de)
DE (1) DE69803377T2 (de)
FR (1) FR2763745B1 (de)
NO (1) NO995731L (de)
WO (1) WO1998053483A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10104868A1 (de) * 2001-02-03 2002-08-22 Bosch Gmbh Robert Mikromechanisches Bauelement sowie ein Verfahren zur Herstellung eines mikromechanischen Bauelements
JP4890689B2 (ja) * 2001-07-24 2012-03-07 オリンパス株式会社 三次元構造体の製造方法及び揺動体の製造方法
FR2834055B1 (fr) * 2001-12-20 2004-02-13 Thales Sa Capteur inertiel micro-usine pour la mesure de mouvements de rotation
FR2838423B1 (fr) * 2002-04-12 2005-06-24 Thales Sa Procede de fabrication d'une microstructure comportant une cavite sous vide et microstructure correspondante
US6959583B2 (en) * 2002-04-30 2005-11-01 Honeywell International Inc. Passive temperature compensation technique for MEMS devices
US8039443B2 (en) * 2002-11-21 2011-10-18 Archemix Corporation Stabilized aptamers to platelet derived growth factor and their use as oncology therapeutics
FR2856789B1 (fr) * 2003-06-27 2005-08-26 Thales Sa Gyrometre a masse vibrante
FR2880731B1 (fr) * 2005-01-11 2007-04-27 Commissariat Energie Atomique Composant, notamment avec des elements actifs, et procede de realisation d'un tel composant
DE102005015584B4 (de) * 2005-04-05 2010-09-02 Litef Gmbh Verfahren zur Herstellung eines mikromechanischen Bauteils
US8217473B2 (en) 2005-07-29 2012-07-10 Hewlett-Packard Development Company, L.P. Micro electro-mechanical system packaging and interconnect
FR2941525B1 (fr) * 2009-01-23 2011-03-25 Commissariat Energie Atomique Gyrometre en technologie de surface, a detection hors plan par jauge de contrainte.
FR2941533B1 (fr) 2009-01-23 2011-03-11 Commissariat Energie Atomique Capteur inertiel ou resonnant en technologie de surface, a detection hors plan par jauge de contrainte.
CN102602879B (zh) * 2011-11-23 2016-01-06 中国计量学院 谐振式加速度计谐振梁和支撑梁的二步腐蚀制造方法
WO2013089079A1 (ja) * 2011-12-12 2013-06-20 株式会社村田製作所 加速度センサ
KR101540154B1 (ko) * 2013-10-04 2015-07-28 삼성전기주식회사 각속도 센서 및 그의 제조방법
JP6575212B2 (ja) * 2015-08-07 2019-09-18 セイコーエプソン株式会社 電子デバイス、電子デバイスの製造方法、電子機器、および移動体
JP7146499B2 (ja) * 2018-07-17 2022-10-04 東京計器株式会社 ３次元構造部材の製造方法、加速度ピックアップ部材の製造方法、加速度ピックアップ部材、及び加速度センサ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006202A (en) * 1990-06-04 1991-04-09 Xerox Corporation Fabricating method for silicon devices using a two step silicon etching process
EP0468071B1 (de) * 1990-07-25 1994-09-14 International Business Machines Corporation Methode zur Herstellung von mikromechanischen Sensoren für AFM/STM/MFM-Profilometrie und mikromechanischer AFM/STM/MFM-Sensorkopf
FR2687783B1 (fr) * 1992-02-20 1994-05-20 Sextant Avionique Micro-capteur de pression.
FR2700003B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu.
US5415726A (en) * 1993-12-21 1995-05-16 Delco Electronics Corporation Method of making a bridge-supported accelerometer structure
US5484073A (en) * 1994-03-28 1996-01-16 I/O Sensors, Inc. Method for fabricating suspension members for micromachined sensors

Also Published As

Publication number Publication date
US6251698B1 (en) 2001-06-26
WO1998053483A1 (fr) 1998-11-26
EP0983609B1 (de) 2002-01-02
DE69803377D1 (de) 2002-02-28
FR2763745A1 (fr) 1998-11-27
NO995731L (no) 2000-01-21
EP0983609A1 (de) 2000-03-08
NO995731D0 (no) 1999-11-22
FR2763745B1 (fr) 1999-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee