DE69801231D1 - Verfahren zur chemische dampfablagerung von metallfilme - Google Patents
Verfahren zur chemische dampfablagerung von metallfilmeInfo
- Publication number
- DE69801231D1 DE69801231D1 DE69801231T DE69801231T DE69801231D1 DE 69801231 D1 DE69801231 D1 DE 69801231D1 DE 69801231 T DE69801231 T DE 69801231T DE 69801231 T DE69801231 T DE 69801231T DE 69801231 D1 DE69801231 D1 DE 69801231D1
- Authority
- DE
- Germany
- Prior art keywords
- chemical vapor
- metal films
- vapor deposit
- deposit
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/948,955 US6121140A (en) | 1997-10-09 | 1997-10-09 | Method of improving surface morphology and reducing resistivity of chemical vapor deposition-metal films |
PCT/US1998/021113 WO1999019532A1 (en) | 1997-10-09 | 1998-10-07 | Method of chemical vapor deposition of metal films |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69801231D1 true DE69801231D1 (de) | 2001-08-30 |
DE69801231T2 DE69801231T2 (de) | 2001-11-08 |
Family
ID=25488428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69801231T Expired - Lifetime DE69801231T2 (de) | 1997-10-09 | 1998-10-07 | Verfahren zur chemische dampfablagerung von metallfilme |
Country Status (8)
Country | Link |
---|---|
US (1) | US6121140A (de) |
EP (1) | EP1021589B1 (de) |
JP (1) | JP4079591B2 (de) |
KR (1) | KR100624351B1 (de) |
AU (1) | AU9789498A (de) |
DE (1) | DE69801231T2 (de) |
TW (1) | TW432486B (de) |
WO (1) | WO1999019532A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6440494B1 (en) * | 2000-04-05 | 2002-08-27 | Tokyo Electron Limited | In-situ source synthesis for metal CVD |
KR100383759B1 (ko) * | 2000-06-15 | 2003-05-14 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 금속 배선 형성 방법 |
KR100539274B1 (ko) * | 2003-07-15 | 2005-12-27 | 삼성전자주식회사 | 코발트 막 증착 방법 |
KR101233105B1 (ko) | 2008-08-27 | 2013-02-15 | 소이텍 | 선택되거나 제어된 격자 파라미터들을 갖는 반도체 물질층들을 이용하여 반도체 구조물들 또는 소자들을 제조하는 방법 |
SG2014014146A (en) | 2009-11-18 | 2014-07-30 | Soitec Silicon On Insulator | Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods |
US8133806B1 (en) | 2010-09-30 | 2012-03-13 | S.O.I.Tec Silicon On Insulator Technologies | Systems and methods for forming semiconductor materials by atomic layer deposition |
US8486192B2 (en) | 2010-09-30 | 2013-07-16 | Soitec | Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods |
US9023721B2 (en) | 2010-11-23 | 2015-05-05 | Soitec | Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods |
FR2968830B1 (fr) | 2010-12-08 | 2014-03-21 | Soitec Silicon On Insulator | Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe |
FR2968678B1 (fr) | 2010-12-08 | 2015-11-20 | Soitec Silicon On Insulator | Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4751101A (en) * | 1987-04-30 | 1988-06-14 | International Business Machines Corporation | Low stress tungsten films by silicon reduction of WF6 |
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
US5576071A (en) * | 1994-11-08 | 1996-11-19 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds |
US5773363A (en) * | 1994-11-08 | 1998-06-30 | Micron Technology, Inc. | Semiconductor processing method of making electrical contact to a node |
-
1997
- 1997-10-09 US US08/948,955 patent/US6121140A/en not_active Expired - Lifetime
-
1998
- 1998-10-07 KR KR1020007003774A patent/KR100624351B1/ko not_active IP Right Cessation
- 1998-10-07 AU AU97894/98A patent/AU9789498A/en not_active Abandoned
- 1998-10-07 EP EP98952123A patent/EP1021589B1/de not_active Expired - Lifetime
- 1998-10-07 DE DE69801231T patent/DE69801231T2/de not_active Expired - Lifetime
- 1998-10-07 WO PCT/US1998/021113 patent/WO1999019532A1/en active IP Right Grant
- 1998-10-07 JP JP2000516079A patent/JP4079591B2/ja not_active Expired - Fee Related
- 1998-10-12 TW TW087116727A patent/TW432486B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6121140A (en) | 2000-09-19 |
EP1021589B1 (de) | 2001-07-25 |
JP4079591B2 (ja) | 2008-04-23 |
JP2001520314A (ja) | 2001-10-30 |
KR20010030989A (ko) | 2001-04-16 |
WO1999019532A1 (en) | 1999-04-22 |
DE69801231T2 (de) | 2001-11-08 |
TW432486B (en) | 2001-05-01 |
AU9789498A (en) | 1999-05-03 |
EP1021589A1 (de) | 2000-07-26 |
KR100624351B1 (ko) | 2006-09-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |