DE69800287D1 - Kondensator mit einem verbesserten Dielektrikum auf Basis von TaOx - Google Patents
Kondensator mit einem verbesserten Dielektrikum auf Basis von TaOxInfo
- Publication number
- DE69800287D1 DE69800287D1 DE69800287T DE69800287T DE69800287D1 DE 69800287 D1 DE69800287 D1 DE 69800287D1 DE 69800287 T DE69800287 T DE 69800287T DE 69800287 T DE69800287 T DE 69800287T DE 69800287 D1 DE69800287 D1 DE 69800287D1
- Authority
- DE
- Germany
- Prior art keywords
- taox
- capacitor
- improved dielectric
- dielectric based
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/862,907 US5977582A (en) | 1997-05-23 | 1997-05-23 | Capacitor comprising improved TaOx -based dielectric |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69800287D1 true DE69800287D1 (de) | 2000-10-12 |
DE69800287T2 DE69800287T2 (de) | 2001-01-25 |
Family
ID=25339709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69800287T Expired - Lifetime DE69800287T2 (de) | 1997-05-23 | 1998-05-12 | Kondensator mit einem verbesserten Dielektrikum auf Basis von TaOx |
Country Status (6)
Country | Link |
---|---|
US (1) | US5977582A (de) |
EP (1) | EP0880167B1 (de) |
JP (1) | JP3464607B2 (de) |
KR (1) | KR100505305B1 (de) |
DE (1) | DE69800287T2 (de) |
TW (1) | TW434785B (de) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6060406A (en) * | 1998-05-28 | 2000-05-09 | Lucent Technologies Inc. | MOS transistors with improved gate dielectrics |
JP2000003991A (ja) * | 1998-06-15 | 2000-01-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
KR100359860B1 (ko) * | 1998-12-31 | 2003-02-20 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
KR100331271B1 (ko) | 1999-07-01 | 2002-04-06 | 박종섭 | TaON박막을 갖는 커패시터 제조방법 |
US6352944B1 (en) * | 1999-02-10 | 2002-03-05 | Micron Technology, Inc. | Method of depositing an aluminum nitride comprising layer over a semiconductor substrate |
KR100335775B1 (ko) * | 1999-06-25 | 2002-05-09 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
GB2355113B (en) | 1999-06-25 | 2004-05-26 | Hyundai Electronics Ind | Method of manufacturing capacitor for semiconductor memory device |
KR100328454B1 (ko) | 1999-06-29 | 2002-03-16 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
KR100305076B1 (ko) | 1999-07-01 | 2001-11-01 | 박종섭 | 커패시터의 전하저장전극 형성방법 |
KR100331270B1 (ko) | 1999-07-01 | 2002-04-06 | 박종섭 | TaON박막을 갖는 커패시터 제조방법 |
GB2358284B (en) | 1999-07-02 | 2004-07-14 | Hyundai Electronics Ind | Method of manufacturing capacitor for semiconductor memory device |
KR100624903B1 (ko) * | 1999-12-22 | 2006-09-19 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
KR100705926B1 (ko) * | 1999-12-22 | 2007-04-11 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
KR100417855B1 (ko) * | 2001-04-30 | 2004-02-11 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 및 그 제조방법 |
US7469558B2 (en) | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
US6677254B2 (en) | 2001-07-23 | 2004-01-13 | Applied Materials, Inc. | Processes for making a barrier between a dielectric and a conductor and products produced therefrom |
US6946408B2 (en) * | 2001-10-24 | 2005-09-20 | Applied Materials, Inc. | Method and apparatus for depositing dielectric films |
US7404877B2 (en) | 2001-11-09 | 2008-07-29 | Springworks, Llc | Low temperature zirconia based thermal barrier layer by PVD |
KR100444603B1 (ko) * | 2001-12-22 | 2004-08-16 | 주식회사 하이닉스반도체 | 탄탈륨 펜타 옥사이드-알루미늄 옥사이드 유전체막 제조방법 및 이를 적용한 반도체 소자 |
US7378356B2 (en) | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
US6884327B2 (en) | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
US6576482B1 (en) * | 2002-05-07 | 2003-06-10 | Texas Instruments Incorporated | One step deposition process for the top electrode and hardmask in a ferroelectric memory cell |
KR100474592B1 (ko) * | 2002-06-28 | 2005-03-10 | 주식회사 하이닉스반도체 | 캐패시터 형성 방법 |
US9793523B2 (en) | 2002-08-09 | 2017-10-17 | Sapurast Research Llc | Electrochemical apparatus with barrier layer protected substrate |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
WO2004021532A1 (en) | 2002-08-27 | 2004-03-11 | Symmorphix, Inc. | Optically coupling into highly uniform waveguides |
CN1756856B (zh) | 2003-02-27 | 2011-10-12 | 希莫菲克斯公司 | 电介质阻挡层膜 |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
US7238628B2 (en) | 2003-05-23 | 2007-07-03 | Symmorphix, Inc. | Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides |
US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
JP5095412B2 (ja) | 2004-12-08 | 2012-12-12 | シモーフィックス,インコーポレーテッド | LiCoO2の堆積 |
US7838133B2 (en) | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
CN101523571A (zh) | 2006-09-29 | 2009-09-02 | 无穷动力解决方案股份有限公司 | 柔性基板上沉积的电池层的掩模和材料限制 |
US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
EP2225406A4 (de) | 2007-12-21 | 2012-12-05 | Infinite Power Solutions Inc | Verfahren für sputter-targets für elektrolyt-filme |
EP2229706B1 (de) | 2008-01-11 | 2014-12-24 | Infinite Power Solutions, Inc. | Dünnfilmeinkapselung für dünnfilmbatterien und andere geräte |
EP2266183B1 (de) | 2008-04-02 | 2018-12-12 | Sapurast Research LLC | Passive über-/unterspannungssteuerung und schutz für energiespeichereinrichtungen in bezug auf die energiegewinnung |
US8906523B2 (en) | 2008-08-11 | 2014-12-09 | Infinite Power Solutions, Inc. | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
CN102150185B (zh) | 2008-09-12 | 2014-05-28 | 无穷动力解决方案股份有限公司 | 具有经由电磁能进行数据通信的组成导电表面的能量装置及其方法 |
WO2010042594A1 (en) | 2008-10-08 | 2010-04-15 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
EP2474056B1 (de) | 2009-09-01 | 2016-05-04 | Sapurast Research LLC | Bestückte leiterplatte mit integrierter dünnschichtbatterie |
CN102947976B (zh) | 2010-06-07 | 2018-03-16 | 萨普拉斯特研究有限责任公司 | 可充电、高密度的电化学设备 |
US8853819B2 (en) | 2011-01-07 | 2014-10-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor structure with passive element network and manufacturing method thereof |
US9219110B2 (en) | 2014-04-10 | 2015-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM capacitor structure |
US9368392B2 (en) | 2014-04-10 | 2016-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM capacitor structure |
US9391016B2 (en) * | 2014-04-10 | 2016-07-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM capacitor structure |
US9425061B2 (en) | 2014-05-29 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Buffer cap layer to improve MIM structure performance |
JP6155420B2 (ja) * | 2014-08-08 | 2017-07-05 | 株式会社野田スクリーン | 薄膜キャパシタシートの製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1424980A (en) * | 1973-06-20 | 1976-02-11 | Siemens Ag | Thin-film electrical circuits |
US4038167A (en) * | 1976-02-09 | 1977-07-26 | Corning Glass Works | Method of forming a thin film capacitor |
US4200502A (en) * | 1979-03-12 | 1980-04-29 | Siemens Aktiengesellschaft | Method for producing an electrical thin layer circuit |
JPS57113264A (en) * | 1980-12-29 | 1982-07-14 | Fujitsu Ltd | Manufacture of mis type capacitor |
US4471405A (en) * | 1981-12-28 | 1984-09-11 | International Business Machines Corporation | Thin film capacitor with a dual bottom electrode structure |
JPS6028259A (ja) * | 1983-07-26 | 1985-02-13 | Nec Corp | 半導体装置用キヤパシタの製造方法 |
JPS61156865A (ja) * | 1984-12-28 | 1986-07-16 | Nec Corp | 半導体装置 |
US4969032A (en) * | 1988-07-18 | 1990-11-06 | Motorola Inc. | Monolithic microwave integrated circuit having vertically stacked components |
US5111355A (en) * | 1990-09-13 | 1992-05-05 | National Semiconductor Corp. | High value tantalum oxide capacitor |
JPH0521744A (ja) * | 1991-07-10 | 1993-01-29 | Sony Corp | 半導体記憶装置のキヤパシタおよびその製造方法 |
JPH0745467A (ja) * | 1993-07-26 | 1995-02-14 | Alps Electric Co Ltd | 誘電体およびこの誘電体を有するキャパシタ |
US5479316A (en) * | 1993-08-24 | 1995-12-26 | Analog Devices, Inc. | Integrated circuit metal-oxide-metal capacitor and method of making same |
EP0704880A3 (de) * | 1994-09-28 | 1998-09-30 | Matsushita Electric Industrial Co., Ltd. | Hochdruck-Entladungslampe, Herstellungsverfahren einer Entladungsröhre für Hochdruck-Entladungslampen und Herstellungsverfahren eines Hohlröhrenkörpers |
JPH08148380A (ja) * | 1994-11-15 | 1996-06-07 | Kyocera Corp | Cr複合部品 |
-
1997
- 1997-05-23 US US08/862,907 patent/US5977582A/en not_active Expired - Lifetime
-
1998
- 1998-04-13 TW TW087105577A patent/TW434785B/zh not_active IP Right Cessation
- 1998-05-12 DE DE69800287T patent/DE69800287T2/de not_active Expired - Lifetime
- 1998-05-12 EP EP98303706A patent/EP0880167B1/de not_active Expired - Lifetime
- 1998-05-22 JP JP14098998A patent/JP3464607B2/ja not_active Expired - Lifetime
- 1998-05-22 KR KR10-1998-0018520A patent/KR100505305B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69800287T2 (de) | 2001-01-25 |
JPH10340999A (ja) | 1998-12-22 |
EP0880167B1 (de) | 2000-09-06 |
KR19980087299A (ko) | 1998-12-05 |
EP0880167A3 (de) | 1998-12-02 |
US5977582A (en) | 1999-11-02 |
EP0880167A2 (de) | 1998-11-25 |
JP3464607B2 (ja) | 2003-11-10 |
KR100505305B1 (ko) | 2005-10-26 |
TW434785B (en) | 2001-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |