DE69736035D1 - Polierzusammensetzung zum chemisch-mechanischen Polieren - Google Patents

Polierzusammensetzung zum chemisch-mechanischen Polieren

Info

Publication number
DE69736035D1
DE69736035D1 DE69736035T DE69736035T DE69736035D1 DE 69736035 D1 DE69736035 D1 DE 69736035D1 DE 69736035 T DE69736035 T DE 69736035T DE 69736035 T DE69736035 T DE 69736035T DE 69736035 D1 DE69736035 D1 DE 69736035D1
Authority
DE
Germany
Prior art keywords
polishing
chemical mechanical
composition
mechanical polishing
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69736035T
Other languages
English (en)
Other versions
DE69736035T2 (de
Inventor
Takanori Kido
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Application granted granted Critical
Publication of DE69736035D1 publication Critical patent/DE69736035D1/de
Publication of DE69736035T2 publication Critical patent/DE69736035T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
DE69736035T 1996-08-06 1997-07-22 Polierzusammensetzung zum chemisch-mechanischen Polieren Expired - Lifetime DE69736035T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22307296 1996-08-06
JP22307296A JP3507628B2 (ja) 1996-08-06 1996-08-06 化学的機械研磨用研磨組成物

Publications (2)

Publication Number Publication Date
DE69736035D1 true DE69736035D1 (de) 2006-07-20
DE69736035T2 DE69736035T2 (de) 2007-01-25

Family

ID=16792399

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69736035T Expired - Lifetime DE69736035T2 (de) 1996-08-06 1997-07-22 Polierzusammensetzung zum chemisch-mechanischen Polieren

Country Status (6)

Country Link
US (1) US5800577A (de)
EP (1) EP0823465B1 (de)
JP (1) JP3507628B2 (de)
KR (1) KR100231451B1 (de)
DE (1) DE69736035T2 (de)
TW (1) TW374793B (de)

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JP3676030B2 (ja) * 1997-04-10 2005-07-27 株式会社東芝 研磨パッドのドレッシング方法及び半導体装置の製造方法
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JP4163785B2 (ja) * 1998-04-24 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
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JP4163788B2 (ja) * 1998-06-25 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6217416B1 (en) 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
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JP2000183003A (ja) * 1998-10-07 2000-06-30 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法
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JP3523107B2 (ja) 1999-03-17 2004-04-26 株式会社東芝 Ｃｍｐ用スラリおよびｃｍｐ法
JP4555936B2 (ja) * 1999-07-21 2010-10-06 日立化成工業株式会社 Ｃｍｐ研磨液
JP4028163B2 (ja) 1999-11-16 2007-12-26 株式会社デンソー メカノケミカル研磨方法及びメカノケミカル研磨装置
JP2004514266A (ja) * 1999-12-14 2004-05-13 ロデール　ホールディングス　インコーポレイテッド 貴金属用研磨組成物
JP3490038B2 (ja) 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
JP3450247B2 (ja) 1999-12-28 2003-09-22 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
US6376395B2 (en) * 2000-01-11 2002-04-23 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
TW572980B (en) 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
JP2001269859A (ja) 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6569215B2 (en) * 2000-04-17 2003-05-27 Showa Denko Kabushiki Kaisha Composition for polishing magnetic disk substrate
TW528645B (en) * 2000-04-17 2003-04-21 Showa Denko Kk Composition for polishing magnetic disk substrate
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
CA2607856C (en) 2000-05-12 2009-10-20 Nissan Chemical Industries, Ltd. Polishing composition
US6486108B1 (en) * 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
US6454821B1 (en) * 2000-06-21 2002-09-24 Praxair S. T. Technology, Inc. Polishing composition and method
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
US6541384B1 (en) 2000-09-08 2003-04-01 Applied Materials, Inc. Method of initiating cooper CMP process
JP3825246B2 (ja) 2000-11-24 2006-09-27 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP3816743B2 (ja) 2000-11-24 2006-08-30 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US6899804B2 (en) 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7582564B2 (en) 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
JP2003142435A (ja) * 2001-10-31 2003-05-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
KR100499403B1 (ko) * 2002-03-06 2005-07-07 주식회사 하이닉스반도체 슬러리 제조 방법
KR100474537B1 (ko) * 2002-07-16 2005-03-10 주식회사 하이닉스반도체 산화막용 ｃｍｐ 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
US20040140291A1 (en) * 2003-01-20 2004-07-22 Swanson Eric D. Copper etch
US7964005B2 (en) * 2003-04-10 2011-06-21 Technion Research & Development Foundation Ltd. Copper CMP slurry composition
TWI292931B (en) 2003-05-12 2008-01-21 Jsr Corp Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
JP4339034B2 (ja) * 2003-07-01 2009-10-07 花王株式会社 研磨液組成物
JP2005268664A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4064943B2 (ja) * 2004-04-02 2008-03-19 株式会社東芝 半導体装置の製造方法
CN101238192A (zh) * 2005-08-04 2008-08-06 旭硝子株式会社 研磨剂组合物和研磨方法
US20070218692A1 (en) * 2006-01-31 2007-09-20 Nissan Chemical Industries, Ltd. Copper-based metal polishing compositions and polishing processes
US20080283502A1 (en) * 2006-05-26 2008-11-20 Kevin Moeggenborg Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates
KR101396232B1 (ko) * 2010-02-05 2014-05-19 한양대학교 산학협력단 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법
KR101790090B1 (ko) * 2013-05-02 2017-10-25 후지필름 가부시키가이샤 에칭 방법, 이에 이용하는 에칭액 및 에칭액의 키트, 및 반도체 기판 제품의 제조 방법
TWI660017B (zh) * 2016-07-14 2019-05-21 卡博特微電子公司 用於鈷化學機械拋光(cmp)之替代氧化劑

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DE2538855A1 (de) * 1975-09-01 1977-03-10 Wacker Chemitronic Verfahren zur herstellung von schleierfreien halbleiteroberflaechen, insbesondere schleierfreien oberflaechen von (111)-orientiertem galliumarsenid
DE3816494A1 (de) * 1988-05-10 1989-11-16 Schering Ag Loesung und verfahren zum aetzen und aktivieren von isolierenden oberflaechen
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BE1007281A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
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Also Published As

Publication number Publication date
JPH1046140A (ja) 1998-02-17
EP0823465B1 (de) 2006-06-07
EP0823465A3 (de) 1998-10-21
TW374793B (en) 1999-11-21
DE69736035T2 (de) 2007-01-25
EP0823465A2 (de) 1998-02-11
US5800577A (en) 1998-09-01
KR19980018410A (ko) 1998-06-05
KR100231451B1 (ko) 1999-11-15
JP3507628B2 (ja) 2004-03-15

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Legal Events

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