DE69733842D1 - Trench-seitenwänden aus n2o-nitriertem oxid zur verhinderung von bor-ausdiffusion und zur stress-reduzierung - Google Patents

Trench-seitenwänden aus n2o-nitriertem oxid zur verhinderung von bor-ausdiffusion und zur stress-reduzierung

Info

Publication number
DE69733842D1
DE69733842D1 DE69733842T DE69733842T DE69733842D1 DE 69733842 D1 DE69733842 D1 DE 69733842D1 DE 69733842 T DE69733842 T DE 69733842T DE 69733842 T DE69733842 T DE 69733842T DE 69733842 D1 DE69733842 D1 DE 69733842D1
Authority
DE
Germany
Prior art keywords
outdiffusion
bor
prevention
side walls
stress reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69733842T
Other languages
English (en)
Other versions
DE69733842T2 (de
Inventor
Reza Arghavani
Robert S Chau
Simon Yang
John Graham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of DE69733842D1 publication Critical patent/DE69733842D1/de
Publication of DE69733842T2 publication Critical patent/DE69733842T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
DE69733842T 1996-12-31 1997-12-16 Trench-seitenwänden aus n2o-nitriertem oxid zur verhinderung von bor-ausdiffusion und zur stress-reduzierung Expired - Lifetime DE69733842T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US775571 1996-12-31
US08/775,571 US5780346A (en) 1996-12-31 1996-12-31 N2 O nitrided-oxide trench sidewalls and method of making isolation structure
PCT/US1997/023307 WO1998029905A1 (en) 1996-12-31 1997-12-16 N2o nitrided-oxide trench sidewalls to prevent boron outdiffusion and decrease stress

Publications (2)

Publication Number Publication Date
DE69733842D1 true DE69733842D1 (de) 2005-09-01
DE69733842T2 DE69733842T2 (de) 2006-04-27

Family

ID=25104813

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69733842T Expired - Lifetime DE69733842T2 (de) 1996-12-31 1997-12-16 Trench-seitenwänden aus n2o-nitriertem oxid zur verhinderung von bor-ausdiffusion und zur stress-reduzierung

Country Status (8)

Country Link
US (3) US5780346A (de)
EP (1) EP1002336B1 (de)
JP (1) JP4518573B2 (de)
KR (1) KR100384761B1 (de)
AU (1) AU5705798A (de)
DE (1) DE69733842T2 (de)
IL (1) IL130562A (de)
WO (1) WO1998029905A1 (de)

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Also Published As

Publication number Publication date
US6261925B1 (en) 2001-07-17
JP2001507864A (ja) 2001-06-12
EP1002336A1 (de) 2000-05-24
US6566727B1 (en) 2003-05-20
DE69733842T2 (de) 2006-04-27
EP1002336B1 (de) 2005-07-27
EP1002336A4 (de) 2000-05-24
KR20000069813A (ko) 2000-11-25
AU5705798A (en) 1998-07-31
US5780346A (en) 1998-07-14
JP4518573B2 (ja) 2010-08-04
IL130562A0 (en) 2000-06-01
IL130562A (en) 2003-12-10
KR100384761B1 (ko) 2003-05-22
WO1998029905A1 (en) 1998-07-09

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