DE69730377D1 - Permanente Halbleiterspeicherzelle und deren Herstellungsverfahren - Google Patents
Permanente Halbleiterspeicherzelle und deren HerstellungsverfahrenInfo
- Publication number
- DE69730377D1 DE69730377D1 DE69730377T DE69730377T DE69730377D1 DE 69730377 D1 DE69730377 D1 DE 69730377D1 DE 69730377 T DE69730377 T DE 69730377T DE 69730377 T DE69730377 T DE 69730377T DE 69730377 D1 DE69730377 D1 DE 69730377D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- manufacturing process
- semiconductor memory
- permanent semiconductor
- permanent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13724596 | 1996-05-30 | ||
| JP13724596 | 1996-05-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69730377D1 true DE69730377D1 (de) | 2004-09-30 |
| DE69730377T2 DE69730377T2 (de) | 2005-09-01 |
Family
ID=15194171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69730377T Expired - Fee Related DE69730377T2 (de) | 1996-05-30 | 1997-05-16 | Permanente Halbleiterspeicherzelle und deren Herstellungsverfahren |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5780886A (de) |
| EP (1) | EP0810666B1 (de) |
| KR (1) | KR100336077B1 (de) |
| DE (1) | DE69730377T2 (de) |
| TW (1) | TW338846B (de) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3012785B2 (ja) * | 1995-07-14 | 2000-02-28 | 松下電子工業株式会社 | 容量素子 |
| JP3891603B2 (ja) * | 1995-12-27 | 2007-03-14 | シャープ株式会社 | 強誘電体薄膜被覆基板、キャパシタ構造素子、及び強誘電体薄膜被覆基板の製造方法 |
| US5780886A (en) * | 1996-05-30 | 1998-07-14 | Oki Electric Industry Co., Ltd. | Non-volatile semiconductor memory cell and method for production thereof |
| US6048738A (en) * | 1997-03-07 | 2000-04-11 | Sharp Laboratories Of America, Inc. | Method of making ferroelectric memory cell for VLSI RAM array |
| KR100458084B1 (ko) * | 1997-12-27 | 2005-06-07 | 주식회사 하이닉스반도체 | 누설전류가 감소된 하부전극을 갖는 강유전체 커패시터 형성 방법 |
| KR100436059B1 (ko) | 1997-12-30 | 2004-12-17 | 주식회사 하이닉스반도체 | 강유전체 캐패시터 형성 방법 |
| JP3482883B2 (ja) * | 1998-08-24 | 2004-01-06 | 株式会社村田製作所 | 強誘電体薄膜素子およびその製造方法 |
| DE19840824C1 (de) * | 1998-09-07 | 1999-10-21 | Siemens Ag | Ferroelektrischer Transistor, dessen Verwendung in einer Speicherzellenanordnung und Verfahren zu dessen Herstellung |
| US6541806B2 (en) | 1999-01-14 | 2003-04-01 | Symetrix Corporation | Ferroelectric device with capping layer and method of making same |
| KR100323711B1 (ko) * | 1999-06-10 | 2002-02-07 | 구자홍 | 강유전체 메모리 제조방법 |
| US6943392B2 (en) * | 1999-08-30 | 2005-09-13 | Micron Technology, Inc. | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen |
| US6444478B1 (en) | 1999-08-31 | 2002-09-03 | Micron Technology, Inc. | Dielectric films and methods of forming same |
| KR100747369B1 (ko) * | 1999-09-30 | 2007-08-07 | 로무 가부시키가이샤 | 불휘발성 메모리 |
| US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
| JP4303389B2 (ja) * | 2000-02-24 | 2009-07-29 | ローム株式会社 | 強誘電体メモリ装置の製造方法 |
| US6558517B2 (en) * | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
| US6303502B1 (en) * | 2000-06-06 | 2001-10-16 | Sharp Laboratories Of America, Inc. | MOCVD metal oxide for one transistor memory |
| JP2002015588A (ja) * | 2000-06-27 | 2002-01-18 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその駆動方法 |
| US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
| US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
| US6574131B1 (en) * | 2000-08-31 | 2003-06-03 | Micron Technology, Inc. | Depletion mode ferroelectric memory device and method of writing to and reading from the same |
| US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
| US6534357B1 (en) * | 2000-11-09 | 2003-03-18 | Micron Technology, Inc. | Methods for forming conductive structures and structures regarding same |
| KR20030051820A (ko) * | 2000-11-14 | 2003-06-25 | 모토로라 인코포레이티드 | 고 유전 상수 재료를 가지는 반도체 구조체 |
| US6566147B2 (en) | 2001-02-02 | 2003-05-20 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
| US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
| US20020164850A1 (en) * | 2001-03-02 | 2002-11-07 | Gnadinger Alfred P. | Single transistor rare earth manganite ferroelectric nonvolatile memory cell |
| JP4887566B2 (ja) * | 2001-03-27 | 2012-02-29 | 独立行政法人産業技術総合研究所 | 半導体不揮発性記憶素子及びその製造方法 |
| US6437380B1 (en) | 2001-03-28 | 2002-08-20 | Symetrix Corporation | Ferroelectric device with bismuth tantalate capping layer and method of making same |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6489645B1 (en) | 2001-07-03 | 2002-12-03 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit device including a layered superlattice material with an interface buffer layer |
| US6838122B2 (en) * | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
| US20030017266A1 (en) | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
| US6531740B2 (en) | 2001-07-17 | 2003-03-11 | Motorola, Inc. | Integrated impedance matching and stability network |
| US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
| US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
| US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
| US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
| US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
| JP2003060054A (ja) | 2001-08-10 | 2003-02-28 | Rohm Co Ltd | 強誘電体キャパシタを有する半導体装置 |
| US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
| US7011978B2 (en) | 2001-08-17 | 2006-03-14 | Micron Technology, Inc. | Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions |
| US6825517B2 (en) * | 2002-08-28 | 2004-11-30 | Cova Technologies, Inc. | Ferroelectric transistor with enhanced data retention |
| US6888736B2 (en) | 2002-09-19 | 2005-05-03 | Cova Technologies, Inc. | Ferroelectric transistor for storing two data bits |
| US6714435B1 (en) | 2002-09-19 | 2004-03-30 | Cova Technologies, Inc. | Ferroelectric transistor for storing two data bits |
| KR100476375B1 (ko) * | 2002-12-27 | 2005-03-17 | 주식회사 하이닉스반도체 | 캐패시터 및 그를 구비하는 비휘발 소자의 제조 방법 |
| EP1598872A1 (de) | 2003-02-27 | 2005-11-23 | TDK Corporation | Isolationsfilm mit hoher dielektrizitätskonstante, kapazitives dünnfilmelement, mehrschichtiger dünnfilmkondensator und verfahren zur herstellung eines kapazitiven dünnfilmelements |
| JP4392336B2 (ja) * | 2004-03-25 | 2009-12-24 | パナソニック株式会社 | 強誘電体容量素子の製造方法 |
| KR100696766B1 (ko) * | 2004-12-29 | 2007-03-19 | 주식회사 하이닉스반도체 | 차지 트랩 인슐레이터 메모리 장치 |
| DE102005017072A1 (de) * | 2004-12-29 | 2006-07-13 | Hynix Semiconductor Inc., Ichon | Ladungsfalle- bzw. Ladung-Trap-Isolator-Speichereinrichtung |
| US20170338350A1 (en) * | 2016-05-17 | 2017-11-23 | Globalfoundries Inc. | Semiconductor device and method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5519234A (en) * | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
| DE69014027T2 (de) * | 1989-08-30 | 1995-06-01 | Nec Corp | Dünnfilmkondensatoren und deren Herstellungsverfahren. |
| US5146299A (en) * | 1990-03-02 | 1992-09-08 | Westinghouse Electric Corp. | Ferroelectric thin film material, method of deposition, and devices using same |
| US5434102A (en) * | 1991-02-25 | 1995-07-18 | Symetrix Corporation | Process for fabricating layered superlattice materials and making electronic devices including same |
| JP3483210B2 (ja) * | 1992-10-12 | 2004-01-06 | ローム株式会社 | 強誘電体不揮発性記憶装置 |
| JPH0799257A (ja) * | 1993-06-30 | 1995-04-11 | Ricoh Co Ltd | 固体素子 |
| US5548475A (en) * | 1993-11-15 | 1996-08-20 | Sharp Kabushiki Kaisha | Dielectric thin film device |
| JP3113141B2 (ja) * | 1993-12-28 | 2000-11-27 | シャープ株式会社 | 強誘電体結晶薄膜被覆基板、その製造方法及び強誘電体結晶薄膜被覆基板を用いた強誘電体薄膜デバイス |
| US5478653A (en) * | 1994-04-04 | 1995-12-26 | Guenzer; Charles S. | Bismuth titanate as a template layer for growth of crystallographically oriented silicon |
| US5780886A (en) * | 1996-05-30 | 1998-07-14 | Oki Electric Industry Co., Ltd. | Non-volatile semiconductor memory cell and method for production thereof |
-
1997
- 1997-05-16 US US08/857,254 patent/US5780886A/en not_active Expired - Lifetime
- 1997-05-16 EP EP97108107A patent/EP0810666B1/de not_active Expired - Lifetime
- 1997-05-16 DE DE69730377T patent/DE69730377T2/de not_active Expired - Fee Related
- 1997-05-26 TW TW086107067A patent/TW338846B/zh not_active IP Right Cessation
- 1997-05-27 KR KR1019970021043A patent/KR100336077B1/ko not_active IP Right Cessation
-
1998
- 1998-01-06 US US09/003,521 patent/US5989927A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0810666A1 (de) | 1997-12-03 |
| DE69730377T2 (de) | 2005-09-01 |
| KR100336077B1 (ko) | 2002-08-21 |
| EP0810666B1 (de) | 2004-08-25 |
| US5780886A (en) | 1998-07-14 |
| TW338846B (en) | 1998-08-21 |
| US5989927A (en) | 1999-11-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |