DE69729346D1 - Verfahren zur Herstellung eines Heterobipolartransistors mittels zweischichtiger Photolacks - Google Patents
Verfahren zur Herstellung eines Heterobipolartransistors mittels zweischichtiger PhotolacksInfo
- Publication number
- DE69729346D1 DE69729346D1 DE69729346T DE69729346T DE69729346D1 DE 69729346 D1 DE69729346 D1 DE 69729346D1 DE 69729346 T DE69729346 T DE 69729346T DE 69729346 T DE69729346 T DE 69729346T DE 69729346 D1 DE69729346 D1 DE 69729346D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- heterobipolar transistor
- layer photoresists
- photoresists
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920002120 photoresistant polymer Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/01—Bipolar transistors-ion implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/011—Bipolar transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/10—Lift-off masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/143—Shadow masking
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/647,609 US5736417A (en) | 1996-05-13 | 1996-05-13 | Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor |
US647609 | 1996-05-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69729346D1 true DE69729346D1 (de) | 2004-07-08 |
DE69729346T2 DE69729346T2 (de) | 2004-10-28 |
Family
ID=24597641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69729346T Expired - Fee Related DE69729346T2 (de) | 1996-05-13 | 1997-03-27 | Verfahren zur Herstellung eines Heterobipolartransistors mittels zweischichtiger Photolacks |
Country Status (5)
Country | Link |
---|---|
US (2) | US5736417A (de) |
EP (1) | EP0810645B1 (de) |
JP (1) | JP3020890B2 (de) |
KR (1) | KR100264502B1 (de) |
DE (1) | DE69729346T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804487A (en) * | 1996-07-10 | 1998-09-08 | Trw Inc. | Method of fabricating high βHBT devices |
US5946582A (en) * | 1997-01-07 | 1999-08-31 | Telcordia Technologies, Inc. | Method of making an InP-based heterojunction bipolar transistor with reduced base-collector capacitance |
US6285044B1 (en) | 1997-01-08 | 2001-09-04 | Telcordia Technologies, Inc. | InP-based heterojunction bipolar transistor with reduced base-collector capacitance |
DE19834491A1 (de) | 1998-07-31 | 2000-02-03 | Daimler Chrysler Ag | Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors |
DE19852852A1 (de) * | 1998-11-11 | 2000-05-18 | Inst Halbleiterphysik Gmbh | Lithographieverfahren zur Emitterstrukturierung von Bipolartransistoren |
US6255035B1 (en) | 1999-03-17 | 2001-07-03 | Electron Vision Corporation | Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices |
US6541346B2 (en) | 2001-03-20 | 2003-04-01 | Roger J. Malik | Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process |
US6303477B1 (en) | 2001-04-04 | 2001-10-16 | Chartered Semiconductor Manufacturing Ltd | Removal of organic anti-reflection coatings in integrated circuits |
US6864742B2 (en) * | 2001-06-08 | 2005-03-08 | Northrop Grumman Corporation | Application of the doherty amplifier as a predistortion circuit for linearizing microwave amplifiers |
US6469581B1 (en) | 2001-06-08 | 2002-10-22 | Trw Inc. | HEMT-HBT doherty microwave amplifier |
US6569763B1 (en) | 2002-04-09 | 2003-05-27 | Northrop Grumman Corporation | Method to separate a metal film from an insulating film in a semiconductor device using adhesive tape |
US6924203B2 (en) * | 2003-05-27 | 2005-08-02 | Northrop Grumman Corporation | Double HBT base metal micro-bridge |
CN106952951B (zh) * | 2017-03-17 | 2019-11-15 | 中国科学院微电子研究所 | InP基异质结双极晶体管的制作方法 |
CN110862088B (zh) * | 2019-10-30 | 2020-11-13 | 南京大学 | 一种超高深宽比的硅纳米针阵列的制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276267A (ja) * | 1987-05-08 | 1988-11-14 | Fujitsu Ltd | 半導体装置の製造方法 |
US5106766A (en) * | 1989-07-11 | 1992-04-21 | At&T Bell Laboratories | Method of making a semiconductor device that comprises p-type III-V semiconductor material |
DE69128123T2 (de) * | 1990-08-31 | 1998-03-05 | Texas Instruments Inc | Verfahren zum Herstellen selbst-ausrichtender bipolarer Transistoren mit Heteroübergang |
US5219713A (en) * | 1990-12-17 | 1993-06-15 | Rockwell International Corporation | Multi-layer photoresist air bridge fabrication method |
US5208184A (en) * | 1991-04-30 | 1993-05-04 | Texas Instruments Incorporated | P-n junction diffusion barrier employing mixed dopants |
FR2692721B1 (fr) * | 1992-06-17 | 1995-06-30 | France Telecom | Procede de realisation de transistor bipolaire a heterojonction et transistor obtenu. |
US5298439A (en) * | 1992-07-13 | 1994-03-29 | Texas Instruments Incorporated | 1/f noise reduction in heterojunction bipolar transistors |
FR2711451B1 (fr) * | 1993-10-18 | 1995-11-17 | Jackie Etrillard | Procédé d'obtention de contacts conducteurs auto-alignés pour composants électroniques. |
US5472886A (en) * | 1994-12-27 | 1995-12-05 | At&T Corp. | Structure of and method for manufacturing an LED |
US5665614A (en) * | 1995-06-06 | 1997-09-09 | Hughes Electronics | Method for making fully self-aligned submicron heterojunction bipolar transistor |
-
1996
- 1996-05-13 US US08/647,609 patent/US5736417A/en not_active Expired - Fee Related
- 1996-09-30 US US08/720,388 patent/US5892248A/en not_active Expired - Lifetime
-
1997
- 1997-03-27 DE DE69729346T patent/DE69729346T2/de not_active Expired - Fee Related
- 1997-03-27 EP EP97105251A patent/EP0810645B1/de not_active Expired - Lifetime
- 1997-05-13 JP JP9121983A patent/JP3020890B2/ja not_active Expired - Fee Related
- 1997-05-13 KR KR1019970019102A patent/KR100264502B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100264502B1 (ko) | 2000-10-02 |
US5892248A (en) | 1999-04-06 |
EP0810645B1 (de) | 2004-06-02 |
EP0810645A2 (de) | 1997-12-03 |
US5736417A (en) | 1998-04-07 |
KR970077613A (ko) | 1997-12-12 |
JPH1050722A (ja) | 1998-02-20 |
EP0810645A3 (de) | 1998-01-14 |
JP3020890B2 (ja) | 2000-03-15 |
DE69729346T2 (de) | 2004-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |