DE69725648D1 - Verfahren und Gerät zum Bilden eines Beschichtungsfilms - Google Patents

Verfahren und Gerät zum Bilden eines Beschichtungsfilms

Info

Publication number
DE69725648D1
DE69725648D1 DE69725648T DE69725648T DE69725648D1 DE 69725648 D1 DE69725648 D1 DE 69725648D1 DE 69725648 T DE69725648 T DE 69725648T DE 69725648 T DE69725648 T DE 69725648T DE 69725648 D1 DE69725648 D1 DE 69725648D1
Authority
DE
Germany
Prior art keywords
forming
coating film
coating
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69725648T
Other languages
English (en)
Other versions
DE69725648T2 (de
Inventor
Masatoshi Shiraishi
Yukio Kiba
Kunie Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69725648D1 publication Critical patent/DE69725648D1/de
Publication of DE69725648T2 publication Critical patent/DE69725648T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
DE69725648T 1996-05-28 1997-05-24 Verfahren und Gerät zum Bilden eines Beschichtungsfilms Expired - Fee Related DE69725648T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP15617696 1996-05-28
JP15617696 1996-05-28
JP26239196A JP3516195B2 (ja) 1996-05-28 1996-09-11 塗布膜形成方法及びその装置
JP26239196 1996-09-11

Publications (2)

Publication Number Publication Date
DE69725648D1 true DE69725648D1 (de) 2003-11-27
DE69725648T2 DE69725648T2 (de) 2004-08-12

Family

ID=26483988

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69725648T Expired - Fee Related DE69725648T2 (de) 1996-05-28 1997-05-24 Verfahren und Gerät zum Bilden eines Beschichtungsfilms

Country Status (6)

Country Link
US (1) US5939130A (de)
EP (1) EP0810633B1 (de)
JP (1) JP3516195B2 (de)
KR (1) KR970077123A (de)
DE (1) DE69725648T2 (de)
TW (1) TW340961B (de)

Families Citing this family (64)

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TW383414B (en) * 1997-03-05 2000-03-01 Tokyo Electron Ltd Photoresist agent processing method and photoresist agent processing system and evaluation method and processing apparatus for photoresist agent film
DE19722407A1 (de) * 1997-05-28 1998-12-03 Singulus Technologies Ag Verfahren und Vorrichtung zur Schichtdicken- insbesondere Bondschichtdickenregelung
US5926690A (en) 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US6266125B1 (en) * 1998-05-25 2001-07-24 Tokyo Electron Limited Resist processing method and apparatus
US6642155B1 (en) * 1998-06-05 2003-11-04 Micron Technology, Inc. Method for applying a fluid to a rotating silicon wafer surface
US6530340B2 (en) * 1998-11-12 2003-03-11 Advanced Micro Devices, Inc. Apparatus for manufacturing planar spin-on films
US6387825B2 (en) 1998-11-12 2002-05-14 Advanced Micro Devices, Inc. Solution flow-in for uniform deposition of spin-on films
US6317642B1 (en) * 1998-11-12 2001-11-13 Advanced Micro Devices, Inc. Apparatus and methods for uniform scan dispensing of spin-on materials
US6225240B1 (en) 1998-11-12 2001-05-01 Advanced Micro Devices, Inc. Rapid acceleration methods for global planarization of spin-on films
US6200913B1 (en) 1998-11-12 2001-03-13 Advanced Micro Devices, Inc. Cure process for manufacture of low dielectric constant interlevel dielectric layers
US6407009B1 (en) 1998-11-12 2002-06-18 Advanced Micro Devices, Inc. Methods of manufacture of uniform spin-on films
US6281962B1 (en) 1998-12-17 2001-08-28 Tokyo Electron Limited Processing apparatus for coating substrate with resist and developing exposed resist including inspection equipment for inspecting substrate and processing method thereof
AT408930B (de) * 1999-01-13 2002-04-25 Thallner Erich Vorrichtung zur chemischen behandlung von wafern
JP3455458B2 (ja) 1999-02-01 2003-10-14 東京エレクトロン株式会社 塗布、現像装置及び塗布現像処理における基板再生システム
GB9903474D0 (en) * 1999-02-17 1999-04-07 Univ Newcastle Process for the conversion of a fluid phase substrate by dynamic heterogenous contact with an agent
US6319317B1 (en) 1999-04-19 2001-11-20 Tokyo Electron Limited Coating film forming method and coating apparatus
JP4426024B2 (ja) * 1999-09-02 2010-03-03 東京エレクトロン株式会社 熱処理装置の温度校正方法
SG93901A1 (en) 1999-10-25 2003-01-21 Tokyo Electron Ltd Substrate processing system and substrate processing method
US6270579B1 (en) * 1999-10-29 2001-08-07 Advanced Micro Devices, Inc. Nozzle arm movement for resist development
US6248175B1 (en) * 1999-10-29 2001-06-19 Advanced Micro Devices, Inc. Nozzle arm movement for resist development
KR100589914B1 (ko) * 2000-01-29 2006-06-15 삼성전자주식회사 외부기기와의 동기를 위한 스피너 제어장치 및 그 제어방법
JP3792986B2 (ja) 2000-04-11 2006-07-05 東京エレクトロン株式会社 膜形成方法及び膜形成装置
US6549822B1 (en) * 2000-07-25 2003-04-15 Advanced Micro Devices, Inc. Method and apparatus for control of multi-cup semiconductor manufacturing tracks
JP3598054B2 (ja) * 2000-11-06 2004-12-08 東京エレクトロン株式会社 塗布膜形成装置
US6560506B2 (en) * 2000-12-04 2003-05-06 Advanced Micro Devices, Inc. Method and apparatus for control for semiconductor processing for reducing effects of environmental effects
US6500755B2 (en) 2000-12-06 2002-12-31 Advanced Micro Devices, Inc. Resist trim process to define small openings in dielectric layers
JP3943828B2 (ja) * 2000-12-08 2007-07-11 東京エレクトロン株式会社 塗布、現像装置及びパターン形成方法
WO2002071152A2 (en) * 2001-02-23 2002-09-12 Advanced Micro Devices, Inc. Method of controlling the thickness of layers of photoresist
JP2002373843A (ja) * 2001-06-14 2002-12-26 Nec Corp 塗布装置及び塗布膜厚制御方法
US6680078B2 (en) * 2001-07-11 2004-01-20 Micron Technology, Inc. Method for dispensing flowable substances on microelectronic substrates
KR20030026862A (ko) 2001-09-25 2003-04-03 다이닛뽕스크린 세이조오 가부시키가이샤 기판 처리장치 제어 시스템 및 기판 처리장치
KR100566840B1 (ko) * 2002-01-30 2006-04-03 가부시끼가이샤 도시바 성막 방법 및 성막 장치
JP3838964B2 (ja) * 2002-03-13 2006-10-25 株式会社リコー 機能性素子基板の製造装置
JP2003338499A (ja) * 2002-05-20 2003-11-28 Tokyo Electron Ltd 膜形成方法及び膜形成装置
JP2004321946A (ja) * 2003-04-24 2004-11-18 Oki Electric Ind Co Ltd 処理装置、及びそれを用いた被処理体の処理方法
KR100568032B1 (ko) * 2003-06-24 2006-04-05 동부아남반도체 주식회사 포토레지스트 코팅불량 감지방법 및 그 검출장치
DE10339992B4 (de) 2003-08-29 2008-07-03 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines Strukturelements kritischer Abmessung bzw. einer Gateelektrode eines Feldeffekttransistors sowie Ätzsteuerung
DE602004007089T2 (de) * 2003-11-14 2008-02-21 Sharp K.K. Vorrichtung zur Herstellung von Dünnfilmen
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
JP5058449B2 (ja) * 2005-03-31 2012-10-24 芝浦メカトロニクス株式会社 塗布膜の形成方法及び装置
JP2007012782A (ja) * 2005-06-29 2007-01-18 Matsushita Electric Ind Co Ltd 基板処理方法
US7632542B2 (en) * 2005-10-26 2009-12-15 University Of Maryland Method for controlling uniformity of thin films fabricated in processing systems
JP2008210980A (ja) * 2007-02-26 2008-09-11 Toshiba Corp パターン形成方法
EP2128701A1 (de) * 2008-05-30 2009-12-02 ASML Netherlands BV Verfahren zur Bestimmung von Defekten in einem Substrat und Vorrichtung zur Belichtung eines Substrats in einem lithographischen Verfahren
JP4748192B2 (ja) * 2008-08-07 2011-08-17 東京エレクトロン株式会社 塗布装置、塗布方法、塗布、現像装置及び記憶媒体
JP2010239013A (ja) * 2009-03-31 2010-10-21 Shibaura Mechatronics Corp 基板処理装置及び基板処理方法
JP5060517B2 (ja) * 2009-06-24 2012-10-31 東京エレクトロン株式会社 インプリントシステム
JP5478173B2 (ja) * 2009-09-18 2014-04-23 株式会社ディスコ レーザー加工装置
JP2011062740A (ja) * 2009-09-18 2011-03-31 Disco Abrasive Syst Ltd レーザー加工装置
JP2014217805A (ja) * 2013-05-08 2014-11-20 株式会社ディスコ 液状樹脂被覆装置
KR101621484B1 (ko) * 2014-04-11 2016-05-17 세메스 주식회사 기판처리장치
JP6299624B2 (ja) * 2015-02-13 2018-03-28 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置及び記憶媒体
JP6894403B2 (ja) * 2018-05-24 2021-06-30 Ｔｏｗａ株式会社 樹脂成形装置、及び樹脂成形品の製造方法
US11168978B2 (en) * 2020-01-06 2021-11-09 Tokyo Electron Limited Hardware improvements and methods for the analysis of a spinning reflective substrates
CN112040571B (zh) * 2020-08-27 2022-10-21 上海华力集成电路制造有限公司 光刻热板动态温度控制光刻胶膜厚的方法
KR20220097680A (ko) * 2020-12-30 2022-07-08 세메스 주식회사 노즐 대기 포트와 이를 포함하는 기판 처리 장치 및 이를 이용한 노즐 세정 방법
CN112830686A (zh) * 2021-01-21 2021-05-25 四川虹科创新科技有限公司 一种浮法玻璃表面硫膜控制装置及方法
JP2022124070A (ja) * 2021-02-15 2022-08-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、筒状ガードの加工方法
US11738363B2 (en) 2021-06-07 2023-08-29 Tokyo Electron Limited Bath systems and methods thereof
CN114733663B (zh) * 2022-03-17 2023-04-28 中材锂膜有限公司 一种锂离子电池涂覆膜生产中涂层克重监测装置及方法

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
JPS59151424A (ja) * 1983-02-18 1984-08-29 Hitachi Ltd 塗布装置
US5393624A (en) * 1988-07-29 1995-02-28 Tokyo Electron Limited Method and apparatus for manufacturing a semiconductor device
JPH0239520A (ja) * 1988-07-29 1990-02-08 Tokyo Electron Ltd レジスト膜厚の測定方法
JPH03178123A (ja) * 1989-12-06 1991-08-02 Sharp Corp スピンコーターの塗布膜厚安定化システム
JPH052777A (ja) * 1991-06-26 1993-01-08 Seiko Epson Corp レジストコート方法
US5366757A (en) * 1992-10-30 1994-11-22 International Business Machines Corporation In situ resist control during spray and spin in vapor
JP2739902B2 (ja) * 1993-09-30 1998-04-15 東京応化工業株式会社 酸化ケイ素系被膜形成用塗布液

Also Published As

Publication number Publication date
KR970077123A (ko) 1997-12-12
EP0810633A3 (de) 1998-09-02
DE69725648T2 (de) 2004-08-12
EP0810633A2 (de) 1997-12-03
EP0810633B1 (de) 2003-10-22
JP3516195B2 (ja) 2004-04-05
TW340961B (en) 1998-09-21
US5939130A (en) 1999-08-17
JPH1043666A (ja) 1998-02-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee