DE69719301D1 - Flüchtiger Speicherchip mit nicht-flüchtigen Speicherplätzen zur Speicherung von Qualitätsinformation - Google Patents
Flüchtiger Speicherchip mit nicht-flüchtigen Speicherplätzen zur Speicherung von QualitätsinformationInfo
- Publication number
- DE69719301D1 DE69719301D1 DE69719301T DE69719301T DE69719301D1 DE 69719301 D1 DE69719301 D1 DE 69719301D1 DE 69719301 T DE69719301 T DE 69719301T DE 69719301 T DE69719301 T DE 69719301T DE 69719301 D1 DE69719301 D1 DE 69719301D1
- Authority
- DE
- Germany
- Prior art keywords
- volatile memory
- quality information
- storing quality
- memory chip
- memory locations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/006—Identification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT96RM000880A IT1290156B1 (it) | 1996-12-18 | 1996-12-18 | Chip di memoria contenente un registro di memoria non volatile per la memorizzazione permanente di informazioni relative alla qualita' del |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69719301D1 true DE69719301D1 (de) | 2003-04-03 |
DE69719301T2 DE69719301T2 (de) | 2003-12-11 |
Family
ID=11404601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69719301T Expired - Lifetime DE69719301T2 (de) | 1996-12-18 | 1997-12-15 | Flüchtiger Speicherchip mit nicht-flüchtigen Speicherplätzen zur Speicherung von Qualitätsinformation |
Country Status (7)
Country | Link |
---|---|
US (1) | US6130442A (de) |
EP (1) | EP0849675B1 (de) |
JP (1) | JPH10284692A (de) |
DE (1) | DE69719301T2 (de) |
IT (1) | IT1290156B1 (de) |
SG (1) | SG67460A1 (de) |
TW (1) | TW397983B (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6100486A (en) | 1998-08-13 | 2000-08-08 | Micron Technology, Inc. | Method for sorting integrated circuit devices |
US5927512A (en) * | 1997-01-17 | 1999-07-27 | Micron Technology, Inc. | Method for sorting integrated circuit devices |
US5915231A (en) | 1997-02-26 | 1999-06-22 | Micron Technology, Inc. | Method in an integrated circuit (IC) manufacturing process for identifying and redirecting IC's mis-processed during their manufacture |
US5856923A (en) | 1997-03-24 | 1999-01-05 | Micron Technology, Inc. | Method for continuous, non lot-based integrated circuit manufacturing |
US5907492A (en) * | 1997-06-06 | 1999-05-25 | Micron Technology, Inc. | Method for using data regarding manufacturing procedures integrated circuits (IC's) have undergone, such as repairs, to select procedures the IC's will undergo, such as additional repairs |
US7120513B1 (en) | 1997-06-06 | 2006-10-10 | Micron Technology, Inc. | Method for using data regarding manufacturing procedures integrated circuits (ICS) have undergone, such as repairs, to select procedures the ICS will undergo, such as additional repairs |
DE19951048C2 (de) * | 1999-10-22 | 2002-11-21 | Infineon Technologies Ag | Verfahren zur Identifizierung einer integrierten Schaltung |
DE19963689A1 (de) * | 1999-12-29 | 2001-07-12 | Infineon Technologies Ag | Schaltungsanordnung eines integrierten Halbleiterspeichers zum Speichern von Adressen fehlerhafter Speicherzellen |
US7802155B2 (en) * | 2000-01-06 | 2010-09-21 | Super Talent Electronics, Inc. | Non-volatile memory device manufacturing process testing systems and methods thereof |
US6553521B1 (en) * | 2000-02-24 | 2003-04-22 | Infineon Technologies, Richmond L.P. | Method for efficient analysis semiconductor failures |
US7269765B1 (en) * | 2000-04-13 | 2007-09-11 | Micron Technology, Inc. | Method and apparatus for storing failing part locations in a module |
DE10034878C2 (de) * | 2000-07-18 | 2003-12-04 | Infineon Technologies Ag | Verfahren zum Überprüfen eines Bauelementes und Bauelement mit Testspeicher |
JP4413406B2 (ja) * | 2000-10-03 | 2010-02-10 | 株式会社東芝 | 不揮発性半導体メモリ及びそのテスト方法 |
DE10102349C1 (de) | 2001-01-19 | 2002-08-08 | Infineon Technologies Ag | Verfahren und Schaltungsanordnung zur Kennzeichnung einer Betriebseigenschaft einer integrierten Schaltung |
DE10103991C1 (de) * | 2001-01-30 | 2002-06-06 | Infineon Technologies Ag | Verfahren zur Ermittlung der Temperatur eines Halbleiterbauelements insbesondere beim Fehlertest |
DE10115280C2 (de) * | 2001-03-28 | 2003-12-24 | Infineon Technologies Ag | Verfahren zum Klassifizieren von Bauelementen |
US6605478B2 (en) * | 2001-03-30 | 2003-08-12 | Appleid Materials, Inc, | Kill index analysis for automatic defect classification in semiconductor wafers |
DE10139608B4 (de) * | 2001-08-11 | 2007-05-16 | Nucellsys Gmbh | Brennstoffzellenanlage mit einem Gaserzeugungssystem und einem Brennstoffzellensystem und deren Verwendung |
US6639418B2 (en) | 2001-11-21 | 2003-10-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Microelectronic fabrication die electrical probe apparatus electrical test method providing enhanced microelectronic fabrication die electrical test accuracy and efficiency |
US7493534B2 (en) * | 2003-08-29 | 2009-02-17 | Hewlett-Packard Development Company, L.P. | Memory error ranking |
US7484065B2 (en) | 2004-04-20 | 2009-01-27 | Hewlett-Packard Development Company, L.P. | Selective memory allocation |
US7814377B2 (en) * | 2004-07-09 | 2010-10-12 | Sandisk Corporation | Non-volatile memory system with self test capability |
JP2008108326A (ja) * | 2006-10-24 | 2008-05-08 | Toshiba Corp | 記憶装置およびその自己テスト方法 |
US20090288057A1 (en) * | 2008-05-15 | 2009-11-19 | Texas Instruments Incorporated | System and Method for Ordering the Selection of Integrated Circuit Chips |
US7925939B2 (en) * | 2008-09-26 | 2011-04-12 | Macronix International Co., Ltd | Pre-code device, and pre-code system and pre-coding method thererof |
TWI394168B (zh) * | 2008-10-31 | 2013-04-21 | Moai Electronics Corp | Memory test method |
US8621324B2 (en) * | 2010-12-10 | 2013-12-31 | Qualcomm Incorporated | Embedded DRAM having low power self-correction capability |
US9583219B2 (en) | 2014-09-27 | 2017-02-28 | Qualcomm Incorporated | Method and apparatus for in-system repair of memory in burst refresh |
US10290354B1 (en) * | 2017-10-31 | 2019-05-14 | Sandisk Technologies Llc | Partial memory die |
TWI714169B (zh) * | 2019-07-17 | 2020-12-21 | 美商第一檢測有限公司 | 記憶體測試方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3828988A1 (de) * | 1988-08-26 | 1990-03-01 | Bosch Gmbh Robert | Herstellungsverfahren fuer ein elektronisches geraet |
JP2765771B2 (ja) * | 1991-08-07 | 1998-06-18 | ローム株式会社 | 半導体記憶装置の試験方法 |
US5256578A (en) * | 1991-12-23 | 1993-10-26 | Motorola, Inc. | Integral semiconductor wafer map recording |
JP3659981B2 (ja) * | 1992-07-09 | 2005-06-15 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | ダイ特定情報に特徴付けられるダイ上の集積回路を含む装置 |
EP0721645B1 (de) * | 1993-09-30 | 2001-05-09 | Macronix International Co., Ltd. | Automatische testschaltung mit nichtflüchtigem schreiben der zustandsinformation |
GB9411950D0 (en) * | 1994-06-15 | 1994-08-03 | Deas Alexander R | Memory test system |
US5895962A (en) * | 1996-06-13 | 1999-04-20 | Micron Technology, Inc. | Structure and a method for storing information in a semiconductor device |
US5907492A (en) * | 1997-06-06 | 1999-05-25 | Micron Technology, Inc. | Method for using data regarding manufacturing procedures integrated circuits (IC's) have undergone, such as repairs, to select procedures the IC's will undergo, such as additional repairs |
-
1996
- 1996-12-18 IT IT96RM000880A patent/IT1290156B1/it active IP Right Grant
-
1997
- 1997-12-15 DE DE69719301T patent/DE69719301T2/de not_active Expired - Lifetime
- 1997-12-15 EP EP97830673A patent/EP0849675B1/de not_active Expired - Lifetime
- 1997-12-17 US US08/992,607 patent/US6130442A/en not_active Expired - Lifetime
- 1997-12-18 JP JP9349712A patent/JPH10284692A/ja active Pending
- 1997-12-18 SG SG1997004556A patent/SG67460A1/en unknown
-
1998
- 1998-02-23 TW TW087102511A patent/TW397983B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH10284692A (ja) | 1998-10-23 |
EP0849675B1 (de) | 2003-02-26 |
EP0849675A3 (de) | 1998-09-09 |
DE69719301T2 (de) | 2003-12-11 |
SG67460A1 (en) | 1999-09-21 |
US6130442A (en) | 2000-10-10 |
TW397983B (en) | 2000-07-11 |
ITRM960880A0 (it) | 1996-12-18 |
IT1290156B1 (it) | 1998-10-19 |
EP0849675A2 (de) | 1998-06-24 |
ITRM960880A1 (it) | 1998-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |