DE69713777T2 - Positiv arbeitende, 2,3-dinitro-1-naphthol ehthaltende photoresistzusammensetzung - Google Patents

Positiv arbeitende, 2,3-dinitro-1-naphthol ehthaltende photoresistzusammensetzung

Info

Publication number
DE69713777T2
DE69713777T2 DE69713777T DE69713777T DE69713777T2 DE 69713777 T2 DE69713777 T2 DE 69713777T2 DE 69713777 T DE69713777 T DE 69713777T DE 69713777 T DE69713777 T DE 69713777T DE 69713777 T2 DE69713777 T2 DE 69713777T2
Authority
DE
Germany
Prior art keywords
dinitro
naphthol
photoresist composition
positively working
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69713777T
Other languages
English (en)
Other versions
DE69713777D1 (de
Inventor
R Dammel
Ping-Hung Lu
G Kokinda
S Dixit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Application granted granted Critical
Publication of DE69713777D1 publication Critical patent/DE69713777D1/de
Publication of DE69713777T2 publication Critical patent/DE69713777T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
DE69713777T 1996-08-07 1997-08-06 Positiv arbeitende, 2,3-dinitro-1-naphthol ehthaltende photoresistzusammensetzung Expired - Fee Related DE69713777T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/695,157 US5719004A (en) 1996-08-07 1996-08-07 Positive photoresist composition containing a 2,4-dinitro-1-naphthol
PCT/US1997/013616 WO1998006008A1 (en) 1996-08-07 1997-08-06 Positive photoresist composition containing a 2,4-dinitro-1-naphthol

Publications (2)

Publication Number Publication Date
DE69713777D1 DE69713777D1 (de) 2002-08-08
DE69713777T2 true DE69713777T2 (de) 2003-02-06

Family

ID=24791851

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69713777T Expired - Fee Related DE69713777T2 (de) 1996-08-07 1997-08-06 Positiv arbeitende, 2,3-dinitro-1-naphthol ehthaltende photoresistzusammensetzung

Country Status (8)

Country Link
US (1) US5719004A (de)
EP (1) EP0919012B1 (de)
JP (1) JP3135585B2 (de)
KR (1) KR20000029769A (de)
CN (1) CN1095553C (de)
DE (1) DE69713777T2 (de)
TW (1) TW509821B (de)
WO (1) WO1998006008A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100608966B1 (ko) * 1997-10-03 2006-09-22 제이에스알 가부시끼가이샤 감방사선성수지조성물
KR100363695B1 (ko) * 1998-12-31 2003-04-11 주식회사 하이닉스반도체 유기난반사방지중합체및그의제조방법
US6537708B2 (en) 2001-01-31 2003-03-25 Photronics, Inc. Electrical critical dimension measurements on photomasks
JP2004281874A (ja) * 2003-03-18 2004-10-07 Tdk Corp レジストパターン形成方法およびレジストパターン形成システム
JP3977307B2 (ja) * 2003-09-18 2007-09-19 東京応化工業株式会社 ポジ型フォトレジスト組成物及びレジストパターン形成方法
JP4209297B2 (ja) * 2003-10-06 2009-01-14 東京応化工業株式会社 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
TWI678596B (zh) 2018-09-13 2019-12-01 新應材股份有限公司 正型光阻組成物及圖案化聚醯亞胺層之形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1375461A (de) * 1972-05-05 1974-11-27
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
US4871644A (en) * 1986-10-01 1989-10-03 Ciba-Geigy Corporation Photoresist compositions with a bis-benzotriazole
DE3725949A1 (de) * 1987-08-05 1989-02-16 Hoechst Ag Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von negativen reliefkopien
JPH0814696B2 (ja) * 1987-09-17 1996-02-14 富士写真フイルム株式会社 感光性樹脂組成物
JP2622267B2 (ja) * 1988-03-23 1997-06-18 日立化成工業株式会社 感光性樹脂組成物
JP2682126B2 (ja) * 1989-04-10 1997-11-26 住友化学工業株式会社 フォトレジスト組成物
US5225312A (en) * 1990-05-24 1993-07-06 Morton International, Inc. Positive photoresist containing dyes
US5314782A (en) * 1993-03-05 1994-05-24 Morton International, Inc. Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative

Also Published As

Publication number Publication date
CN1095553C (zh) 2002-12-04
US5719004A (en) 1998-02-17
CN1227637A (zh) 1999-09-01
EP0919012B1 (de) 2002-07-03
JP3135585B2 (ja) 2001-02-19
KR20000029769A (ko) 2000-05-25
TW509821B (en) 2002-11-11
EP0919012A1 (de) 1999-06-02
WO1998006008A1 (en) 1998-02-12
JP2000505913A (ja) 2000-05-16
DE69713777D1 (de) 2002-08-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU

8339 Ceased/non-payment of the annual fee