DE69700945D1 - Verfahren zur herstellung einer gesinterten struktur auf einem substrat - Google Patents

Verfahren zur herstellung einer gesinterten struktur auf einem substrat

Info

Publication number
DE69700945D1
DE69700945D1 DE69700945T DE69700945T DE69700945D1 DE 69700945 D1 DE69700945 D1 DE 69700945D1 DE 69700945 T DE69700945 T DE 69700945T DE 69700945 T DE69700945 T DE 69700945T DE 69700945 D1 DE69700945 D1 DE 69700945D1
Authority
DE
Germany
Prior art keywords
producing
substrate
sintered structure
sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69700945T
Other languages
English (en)
Other versions
DE69700945T2 (de
Inventor
Gerardus Notenboom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69700945D1 publication Critical patent/DE69700945D1/de
Application granted granted Critical
Publication of DE69700945T2 publication Critical patent/DE69700945T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
    • B22F10/20—Direct sintering or melting
    • B22F10/22—Direct deposition of molten metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C67/00—Shaping techniques not covered by groups B29C39/00 - B29C65/00, B29C70/00 or B29C73/00
    • B29C67/02—Moulding by agglomerating
    • B29C67/04—Sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00—Processes of additive manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y70/00—Materials specially adapted for additive manufacturing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • C03C17/256—Coating containing TiO2
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0036—Laser treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/212—TiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/113—Deposition methods from solutions or suspensions by sol-gel processes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4664—Adding a circuit layer by thick film methods, e.g. printing techniques or by other techniques for making conductive patterns by using pastes, inks or powders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/25—Process efficiency
DE69700945T 1996-04-17 1997-03-21 Verfahren zur herstellung einer gesinterten struktur auf einem substrat Expired - Lifetime DE69700945T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP96201003 1996-04-17
PCT/IB1997/000281 WO1997038810A1 (en) 1996-04-17 1997-03-21 Method of manufacturing a sintered structure on a substrate

Publications (2)

Publication Number Publication Date
DE69700945D1 true DE69700945D1 (de) 2000-01-20
DE69700945T2 DE69700945T2 (de) 2000-07-20

Family

ID=8223874

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69700945T Expired - Lifetime DE69700945T2 (de) 1996-04-17 1997-03-21 Verfahren zur herstellung einer gesinterten struktur auf einem substrat

Country Status (5)

Country Link
US (1) US6531191B1 (de)
EP (1) EP0847314B1 (de)
JP (1) JP4346684B2 (de)
DE (1) DE69700945T2 (de)
WO (1) WO1997038810A1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0847314B1 (de) * 1996-04-17 1999-12-15 Koninklijke Philips Electronics N.V. Verfahren zur herstellung einer gesinterten struktur auf einem substrat
EP1450412A3 (de) * 1996-05-15 2005-03-09 Seiko Epson Corporation Dünnschichtbauelement und Herstellungsverfahren
US8568684B2 (en) 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
US20090075083A1 (en) 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US6599631B2 (en) 2001-01-26 2003-07-29 Nanogram Corporation Polymer-inorganic particle composites
US7226966B2 (en) 2001-08-03 2007-06-05 Nanogram Corporation Structures incorporating polymer-inorganic particle blends
US7765022B2 (en) * 1998-06-30 2010-07-27 The P.O.M. Group Direct metal deposition apparatus utilizing rapid-response diode laser source
US6348295B1 (en) * 1999-03-26 2002-02-19 Massachusetts Institute Of Technology Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging
GR1003732B (el) 2000-12-29 2001-12-11 Εταιρεια Στηριξης Ερευνας Τεχνολογιας & Εκπαιδευσης (Εσετε) Μεθοδος και συστημα αυτοματοποιημενης εγχρωμης ανεξιτηλης διακοσμησης σε κεραμικα και γυαλι.
DE10128664A1 (de) * 2001-06-15 2003-01-30 Univ Clausthal Tech Verfahren und Vorrichtung zur Herstellung von keramischen Formförpern
US6936181B2 (en) 2001-10-11 2005-08-30 Kovio, Inc. Methods for patterning using liquid embossing
JP4039035B2 (ja) 2001-10-31 2008-01-30 セイコーエプソン株式会社 線パターンの形成方法、線パターン、電気光学装置、電子機器、非接触型カード媒体
JP4068883B2 (ja) * 2002-04-22 2008-03-26 セイコーエプソン株式会社 導電膜配線の形成方法、膜構造体の製造方法、電気光学装置の製造方法、及び電子機器の製造方法
US6957608B1 (en) 2002-08-02 2005-10-25 Kovio, Inc. Contact print methods
JP4244382B2 (ja) * 2003-02-26 2009-03-25 セイコーエプソン株式会社 機能性材料定着方法及びデバイス製造方法
WO2004089851A1 (en) * 2003-04-04 2004-10-21 Siemens Aktiengesellschaft Method for producing ceramic objects
FI116549B (fi) * 2003-04-15 2005-12-15 Kimmo Jokelainen Menetelmä 3D-piirijärjestelyn aikaansaamiseksi ja menetelmällä valmistettu komponentti
ES2246720B1 (es) * 2004-08-02 2006-11-01 Universitat De Valencia Procedimiento de impermeabilizacion de superficies de materiales ceramicos porosos, mediante tratamiento con radiacion laser de dichas superficies previamente impregnadas con una solucion quimica precursora de oxidos formadores de vidrio.
CN101010806A (zh) * 2004-08-20 2007-08-01 皇家飞利浦电子股份有限公司 具有钝化层的微电子系统
CA2584104C (en) * 2004-10-19 2012-12-11 Rolls-Royce Corporation Method and apparatus associated with anisotropic shrink in sintered ceramic items
US7674671B2 (en) 2004-12-13 2010-03-09 Optomec Design Company Aerodynamic jetting of aerosolized fluids for fabrication of passive structures
JP4311364B2 (ja) * 2005-03-18 2009-08-12 セイコーエプソン株式会社 液滴吐出装置
JP4609846B2 (ja) * 2005-03-25 2011-01-12 古河電気工業株式会社 金属焼成体の製造方法及びそれに用いられる金属粒子焼成用材料並びにそれにより得られる配線パターン
GB0511460D0 (en) * 2005-06-06 2005-07-13 Univ Liverpool Process
DE102005036427A1 (de) * 2005-08-03 2007-02-08 Schott Ag Substrat, umfassend zumindest eine voll- oder teilflächige makrostrukturierte Schicht, Verfahren zu deren Herstellung und deren Verwendung
WO2007038950A1 (en) 2005-09-28 2007-04-12 Stichting Dutch Polymer Institute Method for generation of metal surface structures and apparatus therefor
DE102006030822A1 (de) * 2006-06-30 2008-01-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen einer metallischen Kontaktstruktur einer Solarzelle
US20070193675A1 (en) * 2006-02-22 2007-08-23 Abhijit Gurav Process of manufacturing a multilayer device and device manufactured thereby
DE102006015014B4 (de) * 2006-03-31 2008-07-24 Uibel, Krishna, Dipl.-Ing. Verfahren zur Herstellung dreidimensionaler keramischer Formkörper
WO2008085806A1 (en) * 2007-01-03 2008-07-17 Nanogram Corporation Nanoparticle inks based on silicon/germanium, doped particles, printing and processes for semiconductor applications
GB0708381D0 (en) 2007-04-30 2007-06-06 Nokia Corp Method for forming a semiconductor structure
EP1993228B1 (de) * 2007-05-18 2012-05-23 Huawei Technologies Co., Ltd. Verfahren zum Senden von Nachrichten, Vorrichtung zum Senden von Nachrichten und Nachrichtenübertragungssystem
US20090004368A1 (en) * 2007-06-29 2009-01-01 Weyerhaeuser Co. Systems and methods for curing a deposited layer on a substrate
US8447530B2 (en) * 2008-01-11 2013-05-21 The Boeing Company High density structural health monitoring system and method
US8463116B2 (en) 2008-07-01 2013-06-11 Tap Development Limited Liability Company Systems for curing deposited material using feedback control
US8991211B1 (en) 2009-11-01 2015-03-31 The Exone Company Three-dimensional printing glass articles
JP5184584B2 (ja) * 2010-06-21 2013-04-17 古河電気工業株式会社 金属配線パターンの形成方法、金属配線パターン、金属配線基板、および金属配線パターン形成用の金属粒子と基板
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
CN105713568B (zh) 2010-11-01 2018-07-03 3M创新有限公司 用于制备成形陶瓷磨粒的激光法、成形陶瓷磨粒以及磨料制品
ITRM20110184A1 (it) * 2011-04-12 2012-10-13 Dyepower Procedimento di sinterizzazione di formulazioni a base di ossidi metallici.
JP5891782B2 (ja) * 2011-12-27 2016-03-23 株式会社リコー 薄膜製造装置、薄膜製造方法、液滴吐出ヘッド、及びインクジェット記録装置
US9475695B2 (en) 2013-05-24 2016-10-25 Nanogram Corporation Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents
CN103407296A (zh) * 2013-07-29 2013-11-27 南京鼎科纳米技术研究所有限公司 一种激光熔融辅助纳米墨水实现高熔点材料3d打印的方法
JP2017504468A (ja) 2013-10-17 2017-02-09 エックスジェット・リミテッドＸｊｅｔ Ｌｔｄ． インクジェットにより３ｄ物体をプリンティングする方法及びシステム
JP6478212B2 (ja) * 2013-10-24 2019-03-06 株式会社リコー 三次元構造物の造形方法及び三次元構造物の造形装置
JP6060911B2 (ja) * 2014-01-21 2017-01-18 トヨタ自動車株式会社 ステータの製造方法
CN104226997A (zh) * 2014-09-12 2014-12-24 徐海锋 一种3d金属打印方法
US10994473B2 (en) 2015-02-10 2021-05-04 Optomec, Inc. Fabrication of three dimensional structures by in-flight curing of aerosols
US20170348903A1 (en) * 2015-02-10 2017-12-07 Optomec, Inc. Fabrication of Three-Dimensional Materials Gradient Structures by In-Flight Curing of Aerosols
JP6536199B2 (ja) 2015-06-16 2019-07-03 セイコーエプソン株式会社 ３次元形成装置
WO2016208671A1 (ja) * 2015-06-23 2016-12-29 旭硝子株式会社 焼成成形体およびその製造方法、焼成成形体を備える物品、焼成成形体用材料、ならびに、焼成前成形体およびその製造方法
DE102015110360A1 (de) * 2015-06-26 2016-12-29 Bundesrepublik Deutschland, Vertreten Durch Den Bundesminister Für Wirtschaft Und Energie, Dieser Vertreten Durch Den Präsidenten Der Bundesanstalt Für Materialforschung Und -Prüfung (Bam) Verfahren zur laserinduziert additiven Erzeugung eines Grünkörpers mittels Schlickerguss
JP6994295B2 (ja) 2015-12-17 2022-01-14 セイコーエプソン株式会社 三次元造形物の製造方法および三次元造形物製造装置
DE102016219088B4 (de) 2016-09-30 2019-10-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur generativen Herstellung von Bauteilen oder die Ausbildung von Beschichtungen auf Oberflächen von Bauteilen
US20180127297A1 (en) * 2016-11-10 2018-05-10 Goodrich Corporation Powder bed additive manufacturing of low expansion glass
US10798783B2 (en) * 2017-02-15 2020-10-06 Continuous Composites Inc. Additively manufactured composite heater
TWI615448B (zh) * 2017-05-25 2018-02-21 Donbon Paints Industrial Co Ltd 雷射燒結成型用金屬膠體之製備方法
CN107473570A (zh) * 2017-08-11 2017-12-15 西安工业大学 溶胶制备光学元件的装置及其制备方法
CN111655382B (zh) 2017-11-13 2022-05-31 奥普托美克公司 气溶胶流的阻挡
JP2020100885A (ja) * 2018-12-25 2020-07-02 エルジー・ケム・リミテッド 成形装置及び成形体の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665492A (en) * 1984-07-02 1987-05-12 Masters William E Computer automated manufacturing process and system
JPH068493B2 (ja) * 1986-04-22 1994-02-02 三菱電機株式会社 貴金属被覆方法
US5076869A (en) * 1986-10-17 1991-12-31 Board Of Regents, The University Of Texas System Multiple material systems for selective beam sintering
US4997809A (en) * 1987-11-18 1991-03-05 International Business Machines Corporation Fabrication of patterned lines of high Tc superconductors
US5132248A (en) * 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
US5302412A (en) * 1989-02-03 1994-04-12 The Boc Group, Inc. Single atmosphere for firing compatible thick film material
US5284695A (en) * 1989-09-05 1994-02-08 Board Of Regents, The University Of Texas System Method of producing high-temperature parts by way of low-temperature sintering
US5204055A (en) * 1989-12-08 1993-04-20 Massachusetts Institute Of Technology Three-dimensional printing techniques
BE1004844A7 (fr) * 1991-04-12 1993-02-09 Laude Lucien Diego Methodes de metallisation de surfaces a l'aide de poudres metalliques.
US5188902A (en) * 1991-05-30 1993-02-23 Northern Illinois University Production of PT/PZT/PLZI thin films, powders, and laser `direct write` patterns
US5314003A (en) * 1991-12-24 1994-05-24 Microelectronics And Computer Technology Corporation Three-dimensional metal fabrication using a laser
FR2688803B1 (fr) * 1992-03-23 1994-05-06 European Gas Turbines Sa Procede de revetement d'une encoche d'une piece en alliage de nickel par laser.
US5688564A (en) * 1992-07-23 1997-11-18 Institut Polytechnique De Sevenans Process for the preparation and coating of a surface
EP0847314B1 (de) * 1996-04-17 1999-12-15 Koninklijke Philips Electronics N.V. Verfahren zur herstellung einer gesinterten struktur auf einem substrat

Also Published As

Publication number Publication date
JP4346684B2 (ja) 2009-10-21
DE69700945T2 (de) 2000-07-20
EP0847314A1 (de) 1998-06-17
WO1997038810A1 (en) 1997-10-23
US6531191B1 (en) 2003-03-11
EP0847314B1 (de) 1999-12-15
JPH11508326A (ja) 1999-07-21

Similar Documents

Publication Publication Date Title
DE69700945D1 (de) Verfahren zur herstellung einer gesinterten struktur auf einem substrat
DE69739584D1 (de) Verfahren zur herstellung von einer dünnschicht auf einem träger
DE69910614D1 (de) Verfahren zur herstellung einer verbundbeschichtung auf einem substrat
DE69727655D1 (de) Verfahren zur herstellung einer cdte-schicht
DE69906491D1 (de) VERFAHREN ZUR HERSTELLUNG EINER SiCOI-STRUKTUR
DE69730940D1 (de) Verfahren zur herstellung einer halbleiteranordnung
DE69735011D1 (de) Verfahren zur Herstellung einer piezoelektrischen Dünnschichtanordnung
DE69703130D1 (de) Verfahren zur Herstellung einer Gradientenschicht mit einer keramischen Deckschicht
DE69619691D1 (de) Verfahren zur herstellung einer beugungsstruktur
DE69711702D1 (de) Verfahren und vorrichtung zur herstellung einer kohlenstoffreichen beschichtung auf einem beweglichen substrat
DE69932665D1 (de) Verfahren zur Herstellung einer Verbindungsstruktur
DE59409157D1 (de) Verfahren zur Herstellung einer Schicht mit reduzierten mechanischen Spannungen
DE69607546T2 (de) Verfahren zur Herstellung einer Schaltungsanordnung
DE3868178D1 (de) Verfahren zur herstellung einer leitenden struktur auf einem substrat.
DE59710348D1 (de) Verfahren zur Herstellung einer keramischen Schicht auf einem metallischen Grundwerkstoff
DE60013777D1 (de) Verfahren zur herstellung von addressierten ligandmatrizen auf einer oberfläche
DE69934680D1 (de) Verfahren zur herstellung einer schicht
DE69410137D1 (de) Verfahren zur Herstellung einer chalkopyrit-Halbleiterschicht
DE69802250D1 (de) Verfahren zur herstellung einer leitschicht auf einem substrat
DE69707359D1 (de) Verfahren zur Herstellung einer keramischen Membranstruktur
DE59202154D1 (de) Verfahren zur herstellung einer leuchtstoffschicht auf einem substrat.
DE59800621D1 (de) Verfahren zur Herstellung einer mikromechanischen Halbleiteranordnung
DE69719403D1 (de) Verfahren zur Herstellung einer Verbindungshalbleiterschicht
DE59507823D1 (de) Verfahren zur herstellung einer metallischen struktur
DE69907383T2 (de) Verfahren zur Herstellung einer porösen Schicht auf einem Substrat

Legal Events

Date Code Title Description
8364 No opposition during term of opposition