DE69635953D1 - VERFAHREN ZUR HERSTELLUNG EINER Ta205 DIELEKTRISCHEN SCHICHT - Google Patents
VERFAHREN ZUR HERSTELLUNG EINER Ta205 DIELEKTRISCHEN SCHICHTInfo
- Publication number
- DE69635953D1 DE69635953D1 DE69635953T DE69635953T DE69635953D1 DE 69635953 D1 DE69635953 D1 DE 69635953D1 DE 69635953 T DE69635953 T DE 69635953T DE 69635953 T DE69635953 T DE 69635953T DE 69635953 D1 DE69635953 D1 DE 69635953D1
- Authority
- DE
- Germany
- Prior art keywords
- dielectric layer
- capacitor
- ta2o5
- providing
- over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US444853 | 1995-05-19 | ||
US08/444,853 US5663088A (en) | 1995-05-19 | 1995-05-19 | Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer |
PCT/US1996/007212 WO1996036993A1 (en) | 1995-05-19 | 1996-05-17 | METHOD OF FORMING A Ta2O5 DIELECTRIC LAYER |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69635953D1 true DE69635953D1 (de) | 2006-05-11 |
DE69635953T2 DE69635953T2 (de) | 2007-02-01 |
Family
ID=23766625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69635953T Expired - Lifetime DE69635953T2 (de) | 1995-05-19 | 1996-05-17 | VERFAHREN ZUR HERSTELLUNG EINER Ta205 DIELEKTRISCHEN SCHICHT |
Country Status (9)
Country | Link |
---|---|
US (4) | US5663088A (de) |
EP (1) | EP0826237B1 (de) |
JP (1) | JP4314413B2 (de) |
KR (1) | KR100419921B1 (de) |
AT (1) | ATE321359T1 (de) |
AU (1) | AU5864596A (de) |
DE (1) | DE69635953T2 (de) |
TW (1) | TW293161B (de) |
WO (1) | WO1996036993A1 (de) |
Families Citing this family (87)
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US5665625A (en) | 1995-05-19 | 1997-09-09 | Micron Technology, Inc. | Method of forming capacitors having an amorphous electrically conductive layer |
US5786248A (en) * | 1995-10-12 | 1998-07-28 | Micron Technology, Inc. | Semiconductor processing method of forming a tantalum oxide containing capacitor |
KR100189982B1 (ko) * | 1995-11-29 | 1999-06-01 | 윤종용 | 고유전체 캐패시터의 제조방법 |
US5754390A (en) | 1996-01-23 | 1998-05-19 | Micron Technology, Inc. | Integrated capacitor bottom electrode for use with conformal dielectric |
JPH09260600A (ja) * | 1996-03-19 | 1997-10-03 | Sharp Corp | 半導体メモリ素子の製造方法 |
US6455916B1 (en) * | 1996-04-08 | 2002-09-24 | Micron Technology, Inc. | Integrated circuit devices containing isolated dielectric material |
US5843830A (en) * | 1996-06-26 | 1998-12-01 | Micron Technology, Inc. | Capacitor, and methods for forming a capacitor |
US6251720B1 (en) | 1996-09-27 | 2001-06-26 | Randhir P. S. Thakur | High pressure reoxidation/anneal of high dielectric constant materials |
US6548854B1 (en) * | 1997-12-22 | 2003-04-15 | Agere Systems Inc. | Compound, high-K, gate and capacitor insulator layer |
US6075266A (en) * | 1997-01-09 | 2000-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device having MIS transistors and capacitor |
JPH10247723A (ja) * | 1997-03-04 | 1998-09-14 | Oki Electric Ind Co Ltd | 半導体装置のキャパシタの製造方法 |
US5910880A (en) * | 1997-08-20 | 1999-06-08 | Micron Technology, Inc. | Semiconductor circuit components and capacitors |
JP3445925B2 (ja) * | 1997-10-07 | 2003-09-16 | シャープ株式会社 | 半導体記憶素子の製造方法 |
US6156647A (en) * | 1997-10-27 | 2000-12-05 | Applied Materials, Inc. | Barrier layer structure which prevents migration of silicon into an adjacent metallic layer and the method of fabrication of the barrier layer |
US6025228A (en) * | 1997-11-25 | 2000-02-15 | Advanced Micro Devices, Inc. | Method of fabricating an oxynitride-capped high dielectric constant interpolysilicon dielectric structure for a low voltage non-volatile memory |
TW396610B (en) * | 1997-12-06 | 2000-07-01 | Samsung Electronics Co Ltd | A capacitor formed by high dielectric constant stuff |
US6911371B2 (en) | 1997-12-19 | 2005-06-28 | Micron Technology, Inc. | Capacitor forming methods with barrier layers to threshold voltage shift inducing material |
US6165833A (en) * | 1997-12-19 | 2000-12-26 | Micron Technology, Inc. | Semiconductor processing method of forming a capacitor |
US7034353B2 (en) | 1998-02-27 | 2006-04-25 | Micron Technology, Inc. | Methods for enhancing capacitors having roughened features to increase charge-storage capacity |
US6150706A (en) | 1998-02-27 | 2000-11-21 | Micron Technology, Inc. | Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer |
US6682970B1 (en) | 1998-02-27 | 2004-01-27 | Micron Technology, Inc. | Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer |
US6191443B1 (en) | 1998-02-28 | 2001-02-20 | Micron Technology, Inc. | Capacitors, methods of forming capacitors, and DRAM memory cells |
US6162744A (en) * | 1998-02-28 | 2000-12-19 | Micron Technology, Inc. | Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers |
US6111285A (en) | 1998-03-17 | 2000-08-29 | Micron Technology, Inc. | Boride electrodes and barriers for cell dielectrics |
US6730559B2 (en) | 1998-04-10 | 2004-05-04 | Micron Technology, Inc. | Capacitors and methods of forming capacitors |
US6156638A (en) * | 1998-04-10 | 2000-12-05 | Micron Technology, Inc. | Integrated circuitry and method of restricting diffusion from one material to another |
US6165834A (en) * | 1998-05-07 | 2000-12-26 | Micron Technology, Inc. | Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell |
US6255186B1 (en) | 1998-05-21 | 2001-07-03 | Micron Technology, Inc. | Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom |
US6331811B2 (en) * | 1998-06-12 | 2001-12-18 | Nec Corporation | Thin-film resistor, wiring substrate, and method for manufacturing the same |
KR100290895B1 (ko) * | 1998-06-30 | 2001-07-12 | 김영환 | 반도체 소자의 커패시터 구조 및 이의 제조 방법 |
JP4030193B2 (ja) | 1998-07-16 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3592535B2 (ja) | 1998-07-16 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6271131B1 (en) * | 1998-08-26 | 2001-08-07 | Micron Technology, Inc. | Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
US6323081B1 (en) | 1998-09-03 | 2001-11-27 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
US6284655B1 (en) | 1998-09-03 | 2001-09-04 | Micron Technology, Inc. | Method for producing low carbon/oxygen conductive layers |
US6239028B1 (en) | 1998-09-03 | 2001-05-29 | Micron Technology, Inc. | Methods for forming iridium-containing films on substrates |
DE19842704C2 (de) | 1998-09-17 | 2002-03-28 | Infineon Technologies Ag | Herstellverfahren für einen Kondensator mit einem Hoch-epsilon-Dielektrikum oder einem Ferroelektrikum nach dem Fin-Stack-Prinzip unter Einsatz einer Negativform |
US6204203B1 (en) * | 1998-10-14 | 2001-03-20 | Applied Materials, Inc. | Post deposition treatment of dielectric films for interface control |
US6177305B1 (en) | 1998-12-17 | 2001-01-23 | Lsi Logic Corporation | Fabrication of metal-insulator-metal capacitive structures |
KR100293713B1 (ko) * | 1998-12-22 | 2001-07-12 | 박종섭 | 메모리소자의 커패시터 제조방법 |
US6235594B1 (en) * | 1999-01-13 | 2001-05-22 | Agere Systems Guardian Corp. | Methods of fabricating an integrated circuit device with composite oxide dielectric |
US6290822B1 (en) | 1999-01-26 | 2001-09-18 | Agere Systems Guardian Corp. | Sputtering method for forming dielectric films |
US6387748B1 (en) * | 1999-02-16 | 2002-05-14 | Micron Technology, Inc. | Semiconductor circuit constructions, capacitor constructions, and methods of forming semiconductor circuit constructions and capacitor constructions |
US6445023B1 (en) * | 1999-03-16 | 2002-09-03 | Micron Technology, Inc. | Mixed metal nitride and boride barrier layers |
US6417041B1 (en) * | 1999-03-26 | 2002-07-09 | Advanced Micro Devices, Inc. | Method for fabricating high permitivity dielectric stacks having low buffer oxide |
JP3473485B2 (ja) * | 1999-04-08 | 2003-12-02 | 日本電気株式会社 | 薄膜抵抗体およびその製造方法 |
US7022623B2 (en) | 1999-04-22 | 2006-04-04 | Micron Technology, Inc. | Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process |
US6329286B1 (en) | 1999-04-27 | 2001-12-11 | Micron Technology, Inc. | Methods for forming conformal iridium layers on substrates |
US6208009B1 (en) | 1999-04-30 | 2001-03-27 | Digital Devices, Inc. | RC-networks in semiconductor devices and method therefor |
US6281142B1 (en) | 1999-06-04 | 2001-08-28 | Micron Technology, Inc. | Dielectric cure for reducing oxygen vacancies |
US6046081A (en) * | 1999-06-10 | 2000-04-04 | United Microelectronics Corp. | Method for forming dielectric layer of capacitor |
KR100335775B1 (ko) * | 1999-06-25 | 2002-05-09 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
US6465828B2 (en) * | 1999-07-30 | 2002-10-15 | Micron Technology, Inc. | Semiconductor container structure with diffusion barrier |
WO2001024237A1 (en) * | 1999-09-28 | 2001-04-05 | Symetrix Corporation | Integrated circuits with barrier layers and methods of fabricating same |
US6475854B2 (en) | 1999-12-30 | 2002-11-05 | Applied Materials, Inc. | Method of forming metal electrodes |
US6417537B1 (en) * | 2000-01-18 | 2002-07-09 | Micron Technology, Inc. | Metal oxynitride capacitor barrier layer |
US7005695B1 (en) | 2000-02-23 | 2006-02-28 | Micron Technology, Inc. | Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region |
JP3437832B2 (ja) * | 2000-03-22 | 2003-08-18 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
US6476432B1 (en) | 2000-03-23 | 2002-11-05 | Micron Technology, Inc. | Structures and methods for enhancing capacitors in integrated circuits |
US6507063B2 (en) | 2000-04-17 | 2003-01-14 | International Business Machines Corporation | Poly-poly/MOS capacitor having a gate encapsulating first electrode layer |
US6579783B2 (en) | 2000-07-07 | 2003-06-17 | Applied Materials, Inc. | Method for high temperature metal deposition for reducing lateral silicidation |
US6825522B1 (en) * | 2000-07-13 | 2004-11-30 | Micron Technology, Inc. | Capacitor electrode having an interface layer of different chemical composition formed on a bulk layer |
US6461931B1 (en) | 2000-08-29 | 2002-10-08 | Micron Technology, Inc. | Thin dielectric films for DRAM storage capacitors |
US6521544B1 (en) * | 2000-08-31 | 2003-02-18 | Micron Technology, Inc. | Method of forming an ultra thin dielectric film |
US6660631B1 (en) | 2000-08-31 | 2003-12-09 | Micron Technology, Inc. | Devices containing platinum-iridium films and methods of preparing such films and devices |
US6576964B1 (en) * | 2000-08-31 | 2003-06-10 | Micron Technology, Inc. | Dielectric layer for a semiconductor device having less current leakage and increased capacitance |
US6682969B1 (en) * | 2000-08-31 | 2004-01-27 | Micron Technology, Inc. | Top electrode in a strongly oxidizing environment |
US6410968B1 (en) * | 2000-08-31 | 2002-06-25 | Micron Technology, Inc. | Semiconductor device with barrier layer |
US6373087B1 (en) * | 2000-08-31 | 2002-04-16 | Agere Systems Guardian Corp. | Methods of fabricating a metal-oxide-metal capacitor and associated apparatuses |
US7378719B2 (en) * | 2000-12-20 | 2008-05-27 | Micron Technology, Inc. | Low leakage MIM capacitor |
US6495428B1 (en) | 2001-07-11 | 2002-12-17 | Micron Technology, Inc. | Method of making a capacitor with oxygenated metal electrodes and high dielectric constant materials |
US7037730B2 (en) | 2001-07-11 | 2006-05-02 | Micron Technology, Inc. | Capacitor with high dielectric constant materials and method of making |
US6727140B2 (en) | 2001-07-11 | 2004-04-27 | Micron Technology, Inc. | Capacitor with high dielectric constant materials and method of making |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
WO2003030224A2 (en) | 2001-07-25 | 2003-04-10 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US7129128B2 (en) * | 2001-08-29 | 2006-10-31 | Micron Technology, Inc. | Method of improved high K dielectric-polysilicon interface for CMOS devices |
EP2249413A3 (de) * | 2002-04-01 | 2011-02-02 | Konica Corporation | Träger und organisches elektrolumineszentes Bauelement mit einem solchen Träger |
DE10216614B4 (de) * | 2002-04-15 | 2004-06-17 | Infineon Technologies Ag | Verfahren zur Verstärkung einer dielektrischen Schicht auf einem Halbleitersubstrat an Fehlstellen und Anordnung mit einer verstärkten dielektrischen Schicht |
KR100465631B1 (ko) * | 2002-12-11 | 2005-01-13 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
US7385954B2 (en) * | 2003-07-16 | 2008-06-10 | Lucent Technologies Inc. | Method of transmitting or retransmitting packets in a communication system |
US7256980B2 (en) * | 2003-12-30 | 2007-08-14 | Du Pont | Thin film capacitors on ceramic |
DE112005003768A5 (de) * | 2005-12-09 | 2009-02-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dünnfilmwiderstand mit Schichtstruktur und Verfahren zur Herstllunng eines Dünnfilmwiderstands mit Schichtstruktur |
TWI274379B (en) * | 2005-12-26 | 2007-02-21 | Ind Tech Res Inst | MIM capacitor structure and method of manufacturing the same |
JPWO2009090979A1 (ja) * | 2008-01-18 | 2011-05-26 | 東京エレクトロン株式会社 | キャパシタ、半導体装置、およびこれらの作製方法 |
Family Cites Families (28)
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JPH065733B2 (ja) * | 1984-08-27 | 1994-01-19 | アメリカン テレフオン アンド テレグラフ カムパニ− | 集積回路デバイスおよびその製造方法 |
EP0205137A3 (de) * | 1985-06-14 | 1987-11-04 | E.I. Du Pont De Nemours And Company | Dielektrische Zusammensetzungen |
JP2633584B2 (ja) * | 1987-10-06 | 1997-07-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH01222469A (ja) * | 1988-03-01 | 1989-09-05 | Fujitsu Ltd | 半導体記憶装置とその製造方法 |
JPH03157965A (ja) * | 1989-11-15 | 1991-07-05 | Nec Corp | 半導体装置 |
US5057447A (en) * | 1990-07-09 | 1991-10-15 | Texas Instruments Incorporated | Silicide/metal floating gate process |
US5082797A (en) * | 1991-01-22 | 1992-01-21 | Micron Technology, Inc. | Method of making stacked textured container capacitor |
US5234857A (en) * | 1991-03-23 | 1993-08-10 | Samsung Electronics, Co., Ltd. | Method of making semiconductor device having a capacitor of large capacitance |
KR920018987A (ko) * | 1991-03-23 | 1992-10-22 | 김광호 | 캐패시터의 제조방법 |
US5665431A (en) * | 1991-09-03 | 1997-09-09 | Valenite Inc. | Titanium carbonitride coated stratified substrate and cutting inserts made from the same |
US5192589A (en) * | 1991-09-05 | 1993-03-09 | Micron Technology, Inc. | Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity |
US5571572A (en) * | 1991-09-05 | 1996-11-05 | Micron Technology, Inc. | Method of depositing titanium carbonitride films on semiconductor wafers |
JP3055242B2 (ja) * | 1991-09-19 | 2000-06-26 | 日本電気株式会社 | 半導体装置およびその製造方法 |
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KR940009628B1 (ko) * | 1991-11-16 | 1994-10-15 | 삼성전자 주식회사 | 커패시터 및 그 제조방법 |
JP2827661B2 (ja) * | 1992-02-19 | 1998-11-25 | 日本電気株式会社 | 容量素子及びその製造方法 |
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JPH0685187A (ja) * | 1992-09-07 | 1994-03-25 | Nec Corp | 半導体記憶装置 |
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US5246881A (en) * | 1993-04-14 | 1993-09-21 | Micron Semiconductor, Inc. | Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity |
US5278091A (en) * | 1993-05-04 | 1994-01-11 | Micron Semiconductor, Inc. | Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node |
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US5489548A (en) * | 1994-08-01 | 1996-02-06 | Texas Instruments Incorporated | Method of forming high-dielectric-constant material electrodes comprising sidewall spacers |
-
1995
- 1995-05-19 US US08/444,853 patent/US5663088A/en not_active Expired - Lifetime
-
1996
- 1996-05-17 WO PCT/US1996/007212 patent/WO1996036993A1/en active IP Right Grant
- 1996-05-17 KR KR1019970708189A patent/KR100419921B1/ko not_active IP Right Cessation
- 1996-05-17 DE DE69635953T patent/DE69635953T2/de not_active Expired - Lifetime
- 1996-05-17 AU AU58645/96A patent/AU5864596A/en not_active Abandoned
- 1996-05-17 JP JP53511196A patent/JP4314413B2/ja not_active Expired - Fee Related
- 1996-05-17 AT AT96920294T patent/ATE321359T1/de not_active IP Right Cessation
- 1996-05-17 EP EP96920294A patent/EP0826237B1/de not_active Expired - Lifetime
- 1996-05-18 TW TW085105915A patent/TW293161B/zh not_active IP Right Cessation
- 1996-06-11 US US08/664,305 patent/US5814852A/en not_active Expired - Lifetime
-
1997
- 1997-06-24 US US08/881,561 patent/US6017789A/en not_active Expired - Fee Related
-
1998
- 1998-05-28 US US09/086,389 patent/US6198124B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69635953T2 (de) | 2007-02-01 |
JPH11509684A (ja) | 1999-08-24 |
WO1996036993A1 (en) | 1996-11-21 |
KR100419921B1 (ko) | 2004-05-20 |
US6198124B1 (en) | 2001-03-06 |
EP0826237A1 (de) | 1998-03-04 |
AU5864596A (en) | 1996-11-29 |
US5814852A (en) | 1998-09-29 |
ATE321359T1 (de) | 2006-04-15 |
US5663088A (en) | 1997-09-02 |
EP0826237A4 (de) | 1998-09-23 |
US6017789A (en) | 2000-01-25 |
JP4314413B2 (ja) | 2009-08-19 |
KR19990014845A (ko) | 1999-02-25 |
EP0826237B1 (de) | 2006-03-22 |
TW293161B (de) | 1996-12-11 |
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