DE69634007D1 - Elektrisch löschbarer, unmittelbar überschreibbarer, aus multibit-einzelzellen bestehender speicher und daraus hergestellte speichermatrix - Google Patents

Elektrisch löschbarer, unmittelbar überschreibbarer, aus multibit-einzelzellen bestehender speicher und daraus hergestellte speichermatrix

Info

Publication number
DE69634007D1
DE69634007D1 DE1996634007 DE69634007T DE69634007D1 DE 69634007 D1 DE69634007 D1 DE 69634007D1 DE 1996634007 DE1996634007 DE 1996634007 DE 69634007 T DE69634007 T DE 69634007T DE 69634007 D1 DE69634007 D1 DE 69634007D1
Authority
DE
Germany
Prior art keywords
memory
electrically erasable
material made
single cells
made therefrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1996634007
Other languages
English (en)
Other versions
DE69634007T2 (de
Inventor
J Klersy
A Strand
R Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of DE69634007D1 publication Critical patent/DE69634007D1/de
Application granted granted Critical
Publication of DE69634007T2 publication Critical patent/DE69634007T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
DE69634007T 1995-07-25 1996-07-19 Elektrisch löschbarer, unmittelbar überschreibbarer, aus multibit-einzelzellen bestehender speicher und daraus hergestellte speichermatrix Expired - Fee Related DE69634007T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US506630 1995-07-25
US08/506,630 US5536947A (en) 1991-01-18 1995-07-25 Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom
PCT/US1996/012013 WO1997005665A1 (en) 1995-07-25 1996-07-19 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

Publications (2)

Publication Number Publication Date
DE69634007D1 true DE69634007D1 (de) 2005-01-13
DE69634007T2 DE69634007T2 (de) 2005-12-29

Family

ID=24015375

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69634007T Expired - Fee Related DE69634007T2 (de) 1995-07-25 1996-07-19 Elektrisch löschbarer, unmittelbar überschreibbarer, aus multibit-einzelzellen bestehender speicher und daraus hergestellte speichermatrix

Country Status (8)

Country Link
US (1) US5536947A (de)
EP (1) EP0843901B1 (de)
JP (1) JP4303316B2 (de)
KR (1) KR100379322B1 (de)
AU (1) AU6504696A (de)
CA (1) CA2227612C (de)
DE (1) DE69634007T2 (de)
WO (1) WO1997005665A1 (de)

Families Citing this family (232)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5723382A (en) * 1992-06-12 1998-03-03 Sandhu; Gurtej S. Method of making a low-resistance contact to silicon having a titanium silicide interface, an amorphous titanium nitride barrier layer and a conductive plug
US6081034A (en) * 1992-06-12 2000-06-27 Micron Technology, Inc. Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
GB9421138D0 (en) * 1994-10-20 1994-12-07 Hitachi Europ Ltd Memory device
US5831276A (en) 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US5879955A (en) 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US5687112A (en) * 1996-04-19 1997-11-11 Energy Conversion Devices, Inc. Multibit single cell memory element having tapered contact
US7469237B2 (en) * 1996-05-02 2008-12-23 Cooper David L Method and apparatus for fractal computation
US6025220A (en) 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US6337266B1 (en) 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US5789277A (en) 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US7935951B2 (en) * 1996-10-28 2011-05-03 Ovonyx, Inc. Composite chalcogenide materials and devices
US6015977A (en) 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
JP3299909B2 (ja) * 1997-02-25 2002-07-08 シャープ株式会社 酸化物導電体を用いた多層構造電極
US5787042A (en) * 1997-03-18 1998-07-28 Micron Technology, Inc. Method and apparatus for reading out a programmable resistor memory
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6087689A (en) 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6057220A (en) * 1997-09-23 2000-05-02 International Business Machines Corporation Titanium polycide stabilization with a porous barrier
US6141241A (en) * 1998-06-23 2000-10-31 Energy Conversion Devices, Inc. Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
US5912839A (en) * 1998-06-23 1999-06-15 Energy Conversion Devices, Inc. Universal memory element and method of programming same
US6314014B1 (en) 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
US6563156B2 (en) * 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6555860B2 (en) 2000-09-29 2003-04-29 Intel Corporation Compositionally modified resistive electrode
US6809401B2 (en) 2000-10-27 2004-10-26 Matsushita Electric Industrial Co., Ltd. Memory, writing apparatus, reading apparatus, writing method, and reading method
US6569705B2 (en) * 2000-12-21 2003-05-27 Intel Corporation Metal structure for a phase-change memory device
US6638820B2 (en) * 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6727192B2 (en) 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7102150B2 (en) * 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6642102B2 (en) * 2001-06-30 2003-11-04 Intel Corporation Barrier material encapsulation of programmable material
US6951805B2 (en) 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6955940B2 (en) * 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6881623B2 (en) 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6646902B2 (en) * 2001-08-30 2003-11-11 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
WO2003021589A1 (en) 2001-09-01 2003-03-13 Energy Conversion Devices, Inc. Increased data storage in optical data storage and retrieval systems using blue lasers and/or plasmon lenses
US6586761B2 (en) * 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6873538B2 (en) * 2001-12-20 2005-03-29 Micron Technology, Inc. Programmable conductor random access memory and a method for writing thereto
US6909656B2 (en) * 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
US20030143782A1 (en) * 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
FR2835946A1 (fr) * 2002-02-11 2003-08-15 St Microelectronics Sa Transpondeur electromagnetique a code programmable
US6867064B2 (en) * 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
CN100390821C (zh) * 2002-02-19 2008-05-28 Nxp股份有限公司 制造发射机应答器的方法
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6891749B2 (en) * 2002-02-20 2005-05-10 Micron Technology, Inc. Resistance variable ‘on ’ memory
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6809362B2 (en) 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US6937528B2 (en) 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
US6849868B2 (en) 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
KR100642186B1 (ko) * 2002-04-04 2006-11-10 가부시끼가이샤 도시바 상-변화 메모리 디바이스
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US6858482B2 (en) * 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
US6855975B2 (en) 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
JP4103497B2 (ja) * 2002-04-18 2008-06-18 ソニー株式会社 記憶装置とその製造方法および使用方法、半導体装置とその製造方法
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US7015494B2 (en) * 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
JP4027282B2 (ja) * 2002-07-10 2007-12-26 キヤノン株式会社 インクジェット記録ヘッド
WO2004008535A1 (ja) 2002-07-11 2004-01-22 Matsushita Electric Industrial Co., Ltd. 不揮発性メモリおよびその製造方法
US7209378B2 (en) 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US7018863B2 (en) 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US6768666B2 (en) * 2002-08-23 2004-07-27 Energy Conversion Devices, Inc. Phase angle controlled stationary elements for wavefront engineering of electromagnetic radiation
US7010644B2 (en) * 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US6831019B1 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US7163837B2 (en) * 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US6867996B2 (en) 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US6864521B2 (en) * 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US20040040837A1 (en) * 2002-08-29 2004-03-04 Mcteer Allen Method of forming chalcogenide sputter target
US7294527B2 (en) 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US7364644B2 (en) 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US6985377B2 (en) * 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US7242019B2 (en) * 2002-12-13 2007-07-10 Intel Corporation Shunted phase change memory
US20040115945A1 (en) * 2002-12-13 2004-06-17 Lowrey Tyler A. Using an electron beam to write phase change memory devices
JPWO2004066386A1 (ja) * 2003-01-23 2006-05-18 日本電気株式会社 電子素子、それを使用した集積電子素子及びそれを使用した動作方法
US7402851B2 (en) * 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US7115927B2 (en) 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7085155B2 (en) * 2003-03-10 2006-08-01 Energy Conversion Devices, Inc. Secured phase-change devices
US7227170B2 (en) * 2003-03-10 2007-06-05 Energy Conversion Devices, Inc. Multiple bit chalcogenide storage device
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7022579B2 (en) 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US20040197947A1 (en) * 2003-04-07 2004-10-07 Fricke Peter J. Memory-cell filament electrodes and methods
US7050327B2 (en) * 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
US6930909B2 (en) * 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7061004B2 (en) 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US20050018526A1 (en) * 2003-07-21 2005-01-27 Heon Lee Phase-change memory device and manufacturing method thereof
US7106120B1 (en) 2003-07-22 2006-09-12 Sharp Laboratories Of America, Inc. PCMO resistor trimmer
US7308067B2 (en) * 2003-08-04 2007-12-11 Intel Corporation Read bias scheme for phase change memories
US7012273B2 (en) * 2003-08-14 2006-03-14 Silicon Storage Technology, Inc. Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths
US6985385B2 (en) * 2003-08-26 2006-01-10 Grandis, Inc. Magnetic memory element utilizing spin transfer switching and storing multiple bits
US6815704B1 (en) 2003-09-04 2004-11-09 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids
US6927410B2 (en) * 2003-09-04 2005-08-09 Silicon Storage Technology, Inc. Memory device with discrete layers of phase change memory material
US6903361B2 (en) 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
JP2005150243A (ja) * 2003-11-12 2005-06-09 Toshiba Corp 相転移メモリ
US7485891B2 (en) * 2003-11-20 2009-02-03 International Business Machines Corporation Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
US7105864B2 (en) * 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US6936840B2 (en) * 2004-01-30 2005-08-30 International Business Machines Corporation Phase-change memory cell and method of fabricating the phase-change memory cell
US20060171200A1 (en) 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US7082052B2 (en) 2004-02-06 2006-07-25 Unity Semiconductor Corporation Multi-resistive state element with reactive metal
TW200529414A (en) * 2004-02-06 2005-09-01 Renesas Tech Corp Storage
KR100733147B1 (ko) * 2004-02-25 2007-06-27 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
US7098068B2 (en) 2004-03-10 2006-08-29 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
CN100468740C (zh) 2004-04-02 2009-03-11 株式会社半导体能源研究所 半导体器件及其驱动方法
US7301887B2 (en) * 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7190048B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7084691B2 (en) * 2004-07-21 2006-08-01 Sharp Laboratories Of America, Inc. Mono-polarity switchable PCMO resistor trimmer
US20060019497A1 (en) * 2004-07-22 2006-01-26 Zhizhang Chen Reduced feature-size memory devices and methods for fabricating the same
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7288784B2 (en) * 2004-08-19 2007-10-30 Micron Technology, Inc. Structure for amorphous carbon based non-volatile memory
US7151688B2 (en) 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
EP1902311A2 (de) * 2004-09-08 2008-03-26 Forschungszentrum Karlsruhe GmbH Gate-kontrollierter atomarer schalter
KR101175948B1 (ko) * 2004-10-28 2012-08-23 다우 코닝 코포레이션 전도성 경화성 조성물
US7238959B2 (en) * 2004-11-01 2007-07-03 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids and sloped trench, and a method of making same
KR100687709B1 (ko) * 2004-11-04 2007-02-27 한국전자통신연구원 멀티비트형 상변화 메모리 소자 및 그 구동 방법
US7351613B2 (en) * 2004-11-04 2008-04-01 Silicon Storage Technology, Inc. Method of trimming semiconductor elements with electrical resistance feedback
US7646630B2 (en) * 2004-11-08 2010-01-12 Ovonyx, Inc. Programmable matrix array with chalcogenide material
US7816721B2 (en) 2004-11-11 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive
KR101187400B1 (ko) * 2004-11-26 2012-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
TW200633193A (en) * 2004-12-02 2006-09-16 Koninkl Philips Electronics Nv Non-volatile memory
CN100386882C (zh) * 2004-12-20 2008-05-07 旺宏电子股份有限公司 非易失性存储器及其操作方法
US7374174B2 (en) 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
EP1677357A1 (de) * 2004-12-30 2006-07-05 STMicroelectronics S.r.l. Phasenübergangsspeichereinrichtung mit einer Haftschicht und Herstellungsverfahren dafür
US7391642B2 (en) * 2005-01-25 2008-06-24 Intel Corporation Multilevel programming of phase change memory cells
DE102005004434A1 (de) * 2005-01-31 2006-08-10 Infineon Technologies Ag Verfahren und Vorrichtung zur Ansteuerung von Festkörper-Elektrolytzellen
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US7488967B2 (en) * 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7709289B2 (en) 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7269044B2 (en) 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
US7269079B2 (en) 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US7233520B2 (en) 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
JP4894757B2 (ja) 2005-07-29 2012-03-14 富士通株式会社 抵抗記憶素子及び不揮発性半導体記憶装置
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7317567B2 (en) 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7525117B2 (en) * 2005-08-09 2009-04-28 Ovonyx, Inc. Chalcogenide devices and materials having reduced germanium or telluruim content
US7767992B2 (en) * 2005-08-09 2010-08-03 Ovonyx, Inc. Multi-layer chalcogenide devices
US7304368B2 (en) 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
KR100676204B1 (ko) * 2005-08-25 2007-01-30 삼성전자주식회사 이이피롬 셀 트랜지스터
KR100637235B1 (ko) * 2005-08-26 2006-10-20 삼성에스디아이 주식회사 플라즈마 디스플레이 패널
US7491962B2 (en) * 2005-08-30 2009-02-17 Micron Technology, Inc. Resistance variable memory device with nanoparticle electrode and method of fabrication
US7277313B2 (en) 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
JP2007073779A (ja) * 2005-09-07 2007-03-22 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法
CN101267949A (zh) * 2005-09-21 2008-09-17 陶氏康宁公司 使用有机基硼烷胺络合物的环境平版印刷方法
US7390691B2 (en) * 2005-10-28 2008-06-24 Intel Corporation Increasing phase change memory column landing margin
US7589364B2 (en) * 2005-11-02 2009-09-15 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
US7541607B2 (en) 2005-11-02 2009-06-02 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
US7671356B2 (en) * 2005-11-03 2010-03-02 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
WO2007057972A1 (ja) 2005-11-21 2007-05-24 Renesas Technology Corp. 半導体装置
US20070132049A1 (en) * 2005-12-12 2007-06-14 Stipe Barry C Unipolar resistance random access memory (RRAM) device and vertically stacked architecture
GB2433647B (en) 2005-12-20 2008-05-28 Univ Southampton Phase change memory materials, devices and methods
US7579611B2 (en) * 2006-02-14 2009-08-25 International Business Machines Corporation Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide
US7723712B2 (en) 2006-03-17 2010-05-25 Micron Technology, Inc. Reduced power consumption phase change memory and methods for forming the same
KR100782482B1 (ko) * 2006-05-19 2007-12-05 삼성전자주식회사 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법
US7547906B2 (en) * 2006-05-22 2009-06-16 Ovonyx, Inc. Multi-functional chalcogenide electronic devices having gain
US7473950B2 (en) * 2006-06-07 2009-01-06 Ovonyx, Inc. Nitrogenated carbon electrode for chalcogenide device and method of making same
US7457146B2 (en) * 2006-06-19 2008-11-25 Qimonda North America Corp. Memory cell programmed using a temperature controlled set pulse
WO2007148405A1 (ja) * 2006-06-23 2007-12-27 Renesas Technology Corp. 半導体装置
JP2008016115A (ja) * 2006-07-05 2008-01-24 Toshiba Corp 不揮発性記憶装置
JP4191211B2 (ja) * 2006-07-07 2008-12-03 エルピーダメモリ株式会社 不揮発性メモリ及びその制御方法
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US7704789B2 (en) * 2007-02-05 2010-04-27 Intermolecular, Inc. Methods for forming resistive switching memory elements
US7678607B2 (en) 2007-02-05 2010-03-16 Intermolecular, Inc. Methods for forming resistive switching memory elements
US7972897B2 (en) * 2007-02-05 2011-07-05 Intermolecular, Inc. Methods for forming resistive switching memory elements
US7629198B2 (en) * 2007-03-05 2009-12-08 Intermolecular, Inc. Methods for forming nonvolatile memory elements with resistive-switching metal oxides
US8097878B2 (en) * 2007-03-05 2012-01-17 Intermolecular, Inc. Nonvolatile memory elements with metal-deficient resistive-switching metal oxides
US7969769B2 (en) * 2007-03-15 2011-06-28 Ovonyx, Inc. Multi-terminal chalcogenide logic circuits
US20080232228A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Systems and methods of writing and reading a ferro-electric media with a probe tip
US7851915B2 (en) * 2007-04-30 2010-12-14 Stmicroelectronics S.A. Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same
WO2008140979A1 (en) * 2007-05-09 2008-11-20 Intermolecular, Inc. Resistive-switching nonvolatile memory elements
US8125821B2 (en) * 2007-06-01 2012-02-28 Infineon Technologies Ag Method of operating phase-change memory
US9203024B2 (en) * 2007-07-25 2015-12-01 Intel Corporation Copper compatible chalcogenide phase change memory with adjustable threshold voltage
US8294219B2 (en) * 2007-07-25 2012-10-23 Intermolecular, Inc. Nonvolatile memory element including resistive switching metal oxide layers
KR101482814B1 (ko) 2007-07-25 2015-01-14 인터몰레큘러 인코퍼레이티드 다중상태 비휘발성 메모리 소자
WO2009044769A1 (ja) * 2007-10-02 2009-04-09 Ulvac, Inc. カルコゲナイド膜およびその製造方法
KR101071705B1 (ko) * 2007-12-28 2011-10-11 한국과학기술연구원 쓰기/지우기 내구성 특성이 향상된 상변화 메모리 장치 및 그 프로그래밍 방법
JP4929228B2 (ja) 2008-01-23 2012-05-09 韓國電子通信研究院 相変化メモリー素子及びその製造方法
US7960203B2 (en) 2008-01-29 2011-06-14 International Business Machines Corporation Pore phase change material cell fabricated from recessed pillar
US20100221896A1 (en) * 2008-05-28 2010-09-02 Regino Sandoval Electrical Device with Improved Electrode Surface
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US8344348B2 (en) * 2008-10-02 2013-01-01 Ovonyx, Inc. Memory device
US8252653B2 (en) 2008-10-21 2012-08-28 Applied Materials, Inc. Method of forming a non-volatile memory having a silicon nitride charge trap layer
US20100104493A1 (en) * 2008-10-23 2010-04-29 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Reactive composite material structures with endothermic reactants
US20100104823A1 (en) * 2008-10-23 2010-04-29 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Reactive composite material structures with multiple reaction-propagation circuits
US8475868B2 (en) * 2008-10-23 2013-07-02 The Invention Science Fund I Llc Foam-like structures based on reactive composite materials
US8440923B2 (en) * 2008-10-23 2013-05-14 The Invention Science Fund I Llc Electrical closing switch made from reactive composite materials
US20100104834A1 (en) * 2008-10-23 2010-04-29 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Foam-like structures based on reactive composite materials
US8871121B2 (en) * 2008-10-23 2014-10-28 The Invention Science Fund I Llc Optical and metamaterial devices based on reactive composite materials
IT1392556B1 (it) 2008-12-18 2012-03-09 St Microelectronics Rousset Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura
US8148707B2 (en) 2008-12-30 2012-04-03 Stmicroelectronics S.R.L. Ovonic threshold switch film composition for TSLAGS material
US8198671B2 (en) 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma
KR101094386B1 (ko) * 2009-11-30 2011-12-15 주식회사 하이닉스반도체 반도체 장치의 전극 및 캐패시터 제조 방법
US8828788B2 (en) * 2010-05-11 2014-09-09 Micron Technology, Inc. Forming electrodes for chalcogenide containing devices
DE102011104091B4 (de) * 2011-06-09 2018-02-15 Technische Universität Dresden Elektrischer Kontaktaufbau und Verwendung eines elektrischen Kontaktaufbaus
US9054295B2 (en) * 2011-08-23 2015-06-09 Micron Technology, Inc. Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials
US8853713B2 (en) 2012-05-07 2014-10-07 Micron Technology, Inc. Resistive memory having confined filament formation
JP2014049497A (ja) 2012-08-29 2014-03-17 Toshiba Corp 不揮発性半導体記憶装置及びその動作方法
US9001554B2 (en) 2013-01-10 2015-04-07 Intermolecular, Inc. Resistive random access memory cell having three or more resistive states
JP5826779B2 (ja) 2013-02-27 2015-12-02 株式会社東芝 不揮発性半導体記憶装置
WO2015167351A1 (en) 2014-04-30 2015-11-05 Nokia Technologies Oy Memristor and method of production thereof
US11133461B2 (en) * 2014-09-26 2021-09-28 Intel Corporation Laminate diffusion barriers and related devices and methods
US9455404B2 (en) * 2015-01-06 2016-09-27 Macronix International Co., Ltd. Memory device and method of manufacturing the same
CN106997924B (zh) * 2016-01-22 2019-11-26 中芯国际集成电路制造(上海)有限公司 相变存储器及其制造方法和电子设备
US9735103B1 (en) * 2016-07-20 2017-08-15 International Business Machines Corporation Electrical antifuse having airgap or solid core
US9793207B1 (en) 2016-07-20 2017-10-17 International Business Machines Corporation Electrical antifuse including phase change material
US10672833B2 (en) 2017-07-26 2020-06-02 Micron Technology, Inc. Semiconductor devices including a passive material between memory cells and conductive access lines, and related electronic devices
US10892406B2 (en) 2018-06-04 2021-01-12 Intel Corporation Phase change memory structures and devices
US20200295083A1 (en) * 2019-03-15 2020-09-17 Macronix International Co., Ltd. Barrier layer for selector devices and memory devices using same
US11456415B2 (en) 2020-12-08 2022-09-27 International Business Machines Corporation Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner
US11476418B2 (en) 2020-12-08 2022-10-18 International Business Machines Corporation Phase change memory cell with a projection liner

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406509A (en) * 1991-01-18 1995-04-11 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability

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US5536947A (en) 1996-07-16
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