DE69633339D1 - Verfahren zum verändern einer freiliegenden oberfläche eines halbleiterwafers - Google Patents

Verfahren zum verändern einer freiliegenden oberfläche eines halbleiterwafers

Info

Publication number
DE69633339D1
DE69633339D1 DE69633339T DE69633339T DE69633339D1 DE 69633339 D1 DE69633339 D1 DE 69633339D1 DE 69633339 T DE69633339 T DE 69633339T DE 69633339 T DE69633339 T DE 69633339T DE 69633339 D1 DE69633339 D1 DE 69633339D1
Authority
DE
Germany
Prior art keywords
modifying
semiconductor
exposed surface
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633339T
Other languages
English (en)
Other versions
DE69633339T2 (de
Inventor
J Bruxvoort
R Culler
Kwok-Lun Ho
A Kaisaki
R Kessel
P Klun
K Kranz
P Messner
J Webb
P Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Co
Original Assignee
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining and Manufacturing Co filed Critical Minnesota Mining and Manufacturing Co
Application granted granted Critical
Publication of DE69633339D1 publication Critical patent/DE69633339D1/de
Publication of DE69633339T2 publication Critical patent/DE69633339T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
DE69633339T 1995-09-22 1996-09-19 Verfahren zum verändern einer freiliegenden oberfläche eines halbleiterwafers Expired - Lifetime DE69633339T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US416195P 1995-09-22 1995-09-22
US4161P 1995-09-22
US55772795A 1995-11-13 1995-11-13
US557727 1995-11-13
US08/694,014 US5958794A (en) 1995-09-22 1996-08-08 Method of modifying an exposed surface of a semiconductor wafer
US694014 1996-08-08
PCT/US1996/015089 WO1997011484A1 (en) 1995-09-22 1996-09-19 Method of modifying an exposed surface of a semiconductor wafer

Publications (2)

Publication Number Publication Date
DE69633339D1 true DE69633339D1 (de) 2004-10-14
DE69633339T2 DE69633339T2 (de) 2005-09-22

Family

ID=27357580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633339T Expired - Lifetime DE69633339T2 (de) 1995-09-22 1996-09-19 Verfahren zum verändern einer freiliegenden oberfläche eines halbleiterwafers

Country Status (12)

Country Link
US (1) US5958794A (de)
EP (1) EP0852063B1 (de)
JP (3) JPH11512874A (de)
KR (1) KR100456208B1 (de)
CN (1) CN1099127C (de)
AU (1) AU7241396A (de)
CA (1) CA2231159A1 (de)
DE (1) DE69633339T2 (de)
IL (1) IL123520A (de)
MX (1) MX9802098A (de)
MY (1) MY120676A (de)
WO (1) WO1997011484A1 (de)

Families Citing this family (399)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413156B1 (en) * 1996-05-16 2002-07-02 Ebara Corporation Method and apparatus for polishing workpiece
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5876268A (en) * 1997-01-03 1999-03-02 Minnesota Mining And Manufacturing Company Method and article for the production of optical quality surfaces on glass
US6602439B1 (en) * 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same
US6231629B1 (en) * 1997-03-07 2001-05-15 3M Innovative Properties Company Abrasive article for providing a clear surface finish on glass
US5888119A (en) * 1997-03-07 1999-03-30 Minnesota Mining And Manufacturing Company Method for providing a clear surface finish on glass
US5910471A (en) * 1997-03-07 1999-06-08 Minnesota Mining And Manufacturing Company Abrasive article for providing a clear surface finish on glass
US9868100B2 (en) 1997-04-04 2018-01-16 Chien-Min Sung Brazed diamond tools and methods for making the same
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US8092707B2 (en) * 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
AU734883B2 (en) * 1997-04-30 2001-06-21 Minnesota Mining And Manufacturing Company Method of planarizing the upper surface of a semiconductor wafer
US6224465B1 (en) 1997-06-26 2001-05-01 Stuart L. Meyer Methods and apparatus for chemical mechanical planarization using a microreplicated surface
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US5928394A (en) * 1997-10-30 1999-07-27 Minnesota Mining And Manufacturing Company Durable abrasive articles with thick abrasive coatings
US6884721B2 (en) * 1997-12-25 2005-04-26 Shin-Etsu Handotai Co., Ltd. Silicon wafer storage water and silicon wafer storage method
JP2002503559A (ja) 1998-02-19 2002-02-05 ミネソタ マイニング アンド マニュファクチャリング カンパニー ガラス研削用研磨製品および方法
US6435947B2 (en) 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
JP3006591B2 (ja) * 1998-07-02 2000-02-07 信濃電気製錬株式会社 ロール研磨用多孔質砥石及びロール表面の研磨方法
JP2000079551A (ja) * 1998-07-06 2000-03-21 Canon Inc コンディショニング装置及びコンディショニング方法
JP3858462B2 (ja) 1998-07-30 2006-12-13 株式会社日立製作所 半導体装置の製造方法
JP3560484B2 (ja) * 1998-08-05 2004-09-02 昭和電工株式会社 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
TW408420B (en) * 1998-08-14 2000-10-11 Mosel Vitelic Inc A method to measure if the connecting via in the metal wiring layer is aligned correctly
US6232231B1 (en) * 1998-08-31 2001-05-15 Cypress Semiconductor Corporation Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect
JP3337464B2 (ja) 1998-08-31 2002-10-21 日立化成工業株式会社 金属用研磨液及び研磨方法
US6245690B1 (en) * 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
US6656023B1 (en) * 1998-11-06 2003-12-02 Beaver Creek Concepts Inc In situ control with lubricant and tracking
US6739947B1 (en) 1998-11-06 2004-05-25 Beaver Creek Concepts Inc In situ friction detector method and apparatus
US6291349B1 (en) 1999-03-25 2001-09-18 Beaver Creek Concepts Inc Abrasive finishing with partial organic boundary layer
US6541381B2 (en) 1998-11-06 2003-04-01 Beaver Creek Concepts Inc Finishing method for semiconductor wafers using a lubricating boundary layer
US6390890B1 (en) 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
US7131890B1 (en) 1998-11-06 2006-11-07 Beaver Creek Concepts, Inc. In situ finishing control
US6293851B1 (en) 1998-11-06 2001-09-25 Beaver Creek Concepts Inc Fixed abrasive finishing method using lubricants
US6568989B1 (en) 1999-04-01 2003-05-27 Beaver Creek Concepts Inc Semiconductor wafer finishing control
US6267644B1 (en) 1998-11-06 2001-07-31 Beaver Creek Concepts Inc Fixed abrasive finishing element having aids finishing method
US6346202B1 (en) 1999-03-25 2002-02-12 Beaver Creek Concepts Inc Finishing with partial organic boundary layer
US6634927B1 (en) 1998-11-06 2003-10-21 Charles J Molnar Finishing element using finishing aids
US6719615B1 (en) 2000-10-10 2004-04-13 Beaver Creek Concepts Inc Versatile wafer refining
US6428388B2 (en) 1998-11-06 2002-08-06 Beaver Creek Concepts Inc. Finishing element with finishing aids
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
US6276996B1 (en) * 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6206756B1 (en) * 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6169034B1 (en) * 1998-11-25 2001-01-02 Advanced Micro Devices, Inc. Chemically removable Cu CMP slurry abrasive
US6033987A (en) * 1999-01-15 2000-03-07 Winbond Electronics Corp. Method for mapping and adjusting pressure distribution of CMP processes
KR100585480B1 (ko) * 1999-01-21 2006-06-02 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 개선된 연마 패드 및 기판의 연마 방법
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
US6179887B1 (en) 1999-02-17 2001-01-30 3M Innovative Properties Company Method for making an abrasive article and abrasive articles thereof
US6056794A (en) * 1999-03-05 2000-05-02 3M Innovative Properties Company Abrasive articles having bonding systems containing abrasive particles
US6428392B1 (en) * 1999-03-23 2002-08-06 Seimi Chemical Co., Ltd. Abrasive
US6551933B1 (en) 1999-03-25 2003-04-22 Beaver Creek Concepts Inc Abrasive finishing with lubricant and tracking
US6752844B2 (en) * 1999-03-29 2004-06-22 Intel Corporation Ceric-ion slurry for use in chemical-mechanical polishing
WO2000059680A1 (fr) * 1999-03-30 2000-10-12 Nikon Corporation Corps de polissage, dispositif de polissage, procede de polissage et procede de fabrication d'un dispositif a semi-conducteur
US6296557B1 (en) * 1999-04-02 2001-10-02 Micron Technology, Inc. Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6217418B1 (en) * 1999-04-14 2001-04-17 Advanced Micro Devices, Inc. Polishing pad and method for polishing porous materials
JP2000301450A (ja) * 1999-04-19 2000-10-31 Rohm Co Ltd Ｃｍｐ研磨パッドおよびそれを用いたｃｍｐ処理装置
US6634929B1 (en) 1999-04-23 2003-10-21 3M Innovative Properties Company Method for grinding glass
US6458018B1 (en) 1999-04-23 2002-10-01 3M Innovative Properties Company Abrasive article suitable for abrading glass and glass ceramic workpieces
US20020077037A1 (en) * 1999-05-03 2002-06-20 Tietz James V. Fixed abrasive articles
JP4030247B2 (ja) * 1999-05-17 2008-01-09 株式会社荏原製作所 ドレッシング装置及びポリッシング装置
AU4974000A (en) * 1999-05-24 2000-12-12 Potomac Photonics, Inc. A pulse-position system for miniature structures
US6306012B1 (en) * 1999-07-20 2001-10-23 Micron Technology, Inc. Methods and apparatuses for planarizing microelectronic substrate assemblies
JP2001105329A (ja) * 1999-08-02 2001-04-17 Ebara Corp 研磨用砥石
US6238448B1 (en) * 1999-08-16 2001-05-29 R & D Technology, Inc. Grinding stones
US6443812B1 (en) 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
US6376381B1 (en) * 1999-08-31 2002-04-23 Micron Technology, Inc. Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6420266B1 (en) 1999-11-02 2002-07-16 Alien Technology Corporation Methods for creating elements of predetermined shape and apparatuses using these elements
US6479395B1 (en) * 1999-11-02 2002-11-12 Alien Technology Corporation Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings
US6623579B1 (en) * 1999-11-02 2003-09-23 Alien Technology Corporation Methods and apparatus for fluidic self assembly
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6832948B1 (en) 1999-12-03 2004-12-21 Applied Materials Inc. Thermal preconditioning fixed abrasive articles
KR20020072548A (ko) * 1999-12-14 2002-09-16 로델 홀딩스 인코포레이티드 중합체 연마 패드 또는 중합체 복합재 연마 패드의 제조방법
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
US6358850B1 (en) 1999-12-23 2002-03-19 International Business Machines Corporation Slurry-less chemical-mechanical polishing of oxide materials
US6294470B1 (en) 1999-12-22 2001-09-25 International Business Machines Corporation Slurry-less chemical-mechanical polishing
JP3971075B2 (ja) * 2000-01-18 2007-09-05 株式会社Ｔｍｐ 仕上げ研磨用ラッピングオイル組成物
US6607428B2 (en) 2000-01-18 2003-08-19 Applied Materials, Inc. Material for use in carrier and polishing pads
US6746311B1 (en) 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
WO2001074535A1 (en) * 2000-03-31 2001-10-11 Lam Research Corporation Fixed abrasive linear polishing belt and system using the same
US6261959B1 (en) 2000-03-31 2001-07-17 Lam Research Corporation Method and apparatus for chemically-mechanically polishing semiconductor wafers
US6626743B1 (en) 2000-03-31 2003-09-30 Lam Research Corporation Method and apparatus for conditioning a polishing pad
US6616801B1 (en) 2000-03-31 2003-09-09 Lam Research Corporation Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path
US6428394B1 (en) 2000-03-31 2002-08-06 Lam Research Corporation Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6616513B1 (en) 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
WO2001082354A1 (fr) * 2000-04-24 2001-11-01 Sumitomo Mitsubishi Silicon Corporation Procédé de fabrication d'une plaquette de semi-conducteur
US6638144B2 (en) 2000-04-28 2003-10-28 3M Innovative Properties Company Method of cleaning glass
US6413286B1 (en) * 2000-05-03 2002-07-02 Saint-Gobain Abrasives Technology Company Production tool process
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US6361414B1 (en) 2000-06-30 2002-03-26 Lam Research Corporation Apparatus and method for conditioning a fixed abrasive polishing pad in a chemical mechanical planarization process
US6500056B1 (en) 2000-06-30 2002-12-31 Lam Research Corporation Linear reciprocating disposable belt polishing method and apparatus
US6435952B1 (en) 2000-06-30 2002-08-20 Lam Research Corporation Apparatus and method for qualifying a chemical mechanical planarization process
US6495464B1 (en) * 2000-06-30 2002-12-17 Lam Research Corporation Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
US20020016139A1 (en) * 2000-07-25 2002-02-07 Kazuto Hirokawa Polishing tool and manufacturing method therefor
JP2002057130A (ja) * 2000-08-14 2002-02-22 Three M Innovative Properties Co Ｃｍｐ用研磨パッド
US6776699B2 (en) * 2000-08-14 2004-08-17 3M Innovative Properties Company Abrasive pad for CMP
KR100481651B1 (ko) * 2000-08-21 2005-04-08 가부시끼가이샤 도시바 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
EP1315600B1 (de) * 2000-09-08 2004-08-25 3M Innovative Properties Company Schleifblätter, verfahren zur herstellung derselben und verfahren zum schleifen eines glasfaserverbinders
EP1770142A3 (de) 2000-10-06 2008-05-07 3M Innovative Properties Company Verfahren zur Herstellung agglomerierter abrasiver Partikel
AU2001296702A1 (en) 2000-10-16 2002-04-29 3M Innovative Properties Company Method of making ceramic aggregate particles
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US20050020189A1 (en) * 2000-11-03 2005-01-27 3M Innovative Properties Company Flexible abrasive product and method of making and using the same
US20020090901A1 (en) 2000-11-03 2002-07-11 3M Innovative Properties Company Flexible abrasive product and method of making and using the same
US6413869B1 (en) * 2000-11-06 2002-07-02 Advanced Micro Devices, Inc. Dielectric protected chemical-mechanical polishing in integrated circuit interconnects
US6645624B2 (en) 2000-11-10 2003-11-11 3M Innovative Properties Company Composite abrasive particles and method of manufacture
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US6554688B2 (en) 2001-01-04 2003-04-29 Lam Research Corporation Method and apparatus for conditioning a polishing pad with sonic energy
US6875091B2 (en) 2001-01-04 2005-04-05 Lam Research Corporation Method and apparatus for conditioning a polishing pad with sonic energy
US6612916B2 (en) 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
JP2004526308A (ja) * 2001-01-16 2004-08-26 キャボット マイクロエレクトロニクス コーポレイション シュウ酸アンモニウムを含有する研磨系及び方法
US6612917B2 (en) 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) * 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
EP1361933A1 (de) * 2001-02-20 2003-11-19 Ebara Corporation Poliervorrichtung und abrichtverfahren
US6726534B1 (en) 2001-03-01 2004-04-27 Cabot Microelectronics Corporation Preequilibrium polishing method and system
US6796883B1 (en) 2001-03-15 2004-09-28 Beaver Creek Concepts Inc Controlled lubricated finishing
US6752698B1 (en) 2001-03-19 2004-06-22 Lam Research Corporation Method and apparatus for conditioning fixed-abrasive polishing pads
US20030017797A1 (en) * 2001-03-28 2003-01-23 Kendall Philip E. Dual cured abrasive articles
US6568997B2 (en) 2001-04-05 2003-05-27 Rodel Holdings, Inc. CMP polishing composition for semiconductor devices containing organic polymer particles
US6540935B2 (en) * 2001-04-05 2003-04-01 Samsung Electronics Co., Ltd. Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
US6767427B2 (en) * 2001-06-07 2004-07-27 Lam Research Corporation Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process
DE10128924A1 (de) * 2001-06-15 2003-01-23 Philips Corp Intellectual Pty Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks sowie Vorrichtung zum Durchführen dieses Verfahrens
US6485355B1 (en) 2001-06-22 2002-11-26 International Business Machines Corporation Method to increase removal rate of oxide using fixed-abrasive
DE10131668B4 (de) * 2001-06-29 2006-05-18 Infineon Technologies Ag Verfahren zur abrasiven Bearbeitung von Oberflächen, auf Halbleiter-Wafern
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US7121919B2 (en) * 2001-08-30 2006-10-17 Micron Technology, Inc. Chemical mechanical polishing system and process
US20030211747A1 (en) * 2001-09-13 2003-11-13 Nyacol Nano Technologies, Inc Shallow trench isolation polishing using mixed abrasive slurries
US7156717B2 (en) 2001-09-20 2007-01-02 Molnar Charles J situ finishing aid control
US7070480B2 (en) * 2001-10-11 2006-07-04 Applied Materials, Inc. Method and apparatus for polishing substrates
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US6645052B2 (en) * 2001-10-26 2003-11-11 Lam Research Corporation Method and apparatus for controlling CMP pad surface finish
US7416674B2 (en) * 2001-11-08 2008-08-26 Axsun Technologies, Inc. Method for fabricating micro optical elements using CMP
EP1448737B1 (de) * 2001-11-15 2012-01-25 Samsung Electronics Co., Ltd. Aufschlämmungzusammensetzung enthaltend additivzusammensetzung sowie deren verwendung als poliermittel
US6685540B2 (en) 2001-11-27 2004-02-03 Cabot Microelectronics Corporation Polishing pad comprising particles with a solid core and polymeric shell
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US6884723B2 (en) * 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US7121926B2 (en) * 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US7049237B2 (en) * 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US6846232B2 (en) * 2001-12-28 2005-01-25 3M Innovative Properties Company Backing and abrasive product made with the backing and method of making and using the backing and abrasive product
US6702866B2 (en) * 2002-01-10 2004-03-09 Speedfam-Ipec Corporation Homogeneous fixed abrasive polishing pad
US6830503B1 (en) 2002-01-11 2004-12-14 Cabot Microelectronics Corporation Catalyst/oxidizer-based CMP system for organic polymer films
US7097541B2 (en) 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6527622B1 (en) 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US6620029B2 (en) 2002-01-30 2003-09-16 International Business Machines Corporation Apparatus and method for front side chemical mechanical planarization (CMP) of semiconductor workpieces
US6841480B2 (en) * 2002-02-04 2005-01-11 Infineon Technologies Ag Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US6943114B2 (en) * 2002-02-28 2005-09-13 Infineon Technologies Ag Integration scheme for metal gap fill, with fixed abrasive CMP
KR100442873B1 (ko) * 2002-02-28 2004-08-02 삼성전자주식회사 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법
US6852020B2 (en) * 2003-01-22 2005-02-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same
US7037184B2 (en) * 2003-01-22 2006-05-02 Raytech Innovation Solutions, Llc Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US7235296B2 (en) * 2002-03-05 2007-06-26 3M Innovative Properties Co. Formulations for coated diamond abrasive slurries
US6682575B2 (en) 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
JP4034096B2 (ja) * 2002-03-19 2008-01-16 日本碍子株式会社 半導体支持装置
US20030209523A1 (en) * 2002-05-09 2003-11-13 Applied Materials, Inc. Planarization by chemical polishing for ULSI applications
US6841079B2 (en) 2002-05-31 2005-01-11 3M Innovative Properties Company Fluorochemical treatment for silicon articles
US7670623B2 (en) 2002-05-31 2010-03-02 Materials Modification, Inc. Hemostatic composition
US6641630B1 (en) 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
US6604987B1 (en) 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US6638391B1 (en) * 2002-06-19 2003-10-28 United Microelectronics Corp. Wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same
US7091259B2 (en) * 2002-07-03 2006-08-15 3M Innovative Properties Company Dental fillers, pastes, and compositions prepared therefrom
US6964601B2 (en) * 2002-07-12 2005-11-15 Raytech Innovative Solutions, Llc Method for securing a polishing pad to a platen for use in chemical-mechanical polishing of wafers
US7021993B2 (en) * 2002-07-19 2006-04-04 Cabot Microelectronics Corporation Method of polishing a substrate with a polishing system containing conducting polymer
US6811474B2 (en) 2002-07-19 2004-11-02 Cabot Microelectronics Corporation Polishing composition containing conducting polymer
US7044989B2 (en) * 2002-07-26 2006-05-16 3M Innovative Properties Company Abrasive product, method of making and using the same, and apparatus for making the same
JP2004074330A (ja) * 2002-08-13 2004-03-11 Ebara Corp 固定砥粒研磨工具およびその製造方法
US20040127045A1 (en) * 2002-09-12 2004-07-01 Gorantla Venkata R. K. Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition
US7579071B2 (en) * 2002-09-17 2009-08-25 Korea Polyol Co., Ltd. Polishing pad containing embedded liquid microelements and method of manufacturing the same
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US6803353B2 (en) 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
US7560160B2 (en) * 2002-11-25 2009-07-14 Materials Modification, Inc. Multifunctional particulate material, fluid, and composition
JP3835799B2 (ja) * 2002-11-26 2006-10-18 日本ミクロコーティング株式会社 テクスチャ加工用研磨スラリー及び方法
US6911393B2 (en) 2002-12-02 2005-06-28 Arkema Inc. Composition and method for copper chemical mechanical planarization
AU2003297539A1 (en) 2003-01-10 2004-08-10 3M Innovative Properties Company Pad constructions for chemical mechanical planarization applications
US6908366B2 (en) * 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2004273547A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤
US7007972B1 (en) 2003-03-10 2006-03-07 Materials Modification, Inc. Method and airbag inflation apparatus employing magnetic fluid
US6951504B2 (en) * 2003-03-20 2005-10-04 3M Innovative Properties Company Abrasive article with agglomerates and method of use
US6982501B1 (en) 2003-05-19 2006-01-03 Materials Modification, Inc. Magnetic fluid power generator device and method for generating power
US7200956B1 (en) 2003-07-23 2007-04-10 Materials Modification, Inc. Magnetic fluid cushioning device for a footwear or shoe
US20050025973A1 (en) * 2003-07-25 2005-02-03 Slutz David E. CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same
US7160178B2 (en) * 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
TWI223370B (en) * 2003-08-28 2004-11-01 Powerchip Semiconductor Corp Method of piping defect detection
US6869336B1 (en) * 2003-09-18 2005-03-22 Novellus Systems, Inc. Methods and compositions for chemical mechanical planarization of ruthenium
US7084814B2 (en) * 2003-09-23 2006-08-01 Uniwill Computer Corp. Planar inverted F antenna
US7087529B2 (en) 2003-10-02 2006-08-08 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces
US7448389B1 (en) 2003-10-10 2008-11-11 Materials Modification, Inc. Method and kit for inducing hypoxia in tumors through the use of a magnetic fluid
US7427361B2 (en) * 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
US7344988B2 (en) * 2003-10-27 2008-03-18 Dupont Air Products Nanomaterials Llc Alumina abrasive for chemical mechanical polishing
US20050159085A1 (en) * 2003-10-30 2005-07-21 Scott Brandon S. Method of chemically mechanically polishing substrates
US7419911B2 (en) * 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
JP2005150235A (ja) 2003-11-12 2005-06-09 Three M Innovative Properties Co 半導体表面保護シート及び方法
US7112123B2 (en) * 2004-06-14 2006-09-26 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces
US7223156B2 (en) * 2003-11-14 2007-05-29 Amcol International Corporation Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces
WO2005053904A1 (en) * 2003-11-26 2005-06-16 3M Innovative Properties Company Method of abrading a workpiece
US7288021B2 (en) * 2004-01-07 2007-10-30 Cabot Microelectronics Corporation Chemical-mechanical polishing of metals in an oxidized form
WO2005073439A1 (ja) * 2004-02-02 2005-08-11 Shin-Etsu Handotai Co., Ltd. シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法
US20050176251A1 (en) * 2004-02-05 2005-08-11 Duong Chau H. Polishing pad with releasable slick particles
US6951509B1 (en) * 2004-03-09 2005-10-04 3M Innovative Properties Company Undulated pad conditioner and method of using same
US20050206007A1 (en) * 2004-03-18 2005-09-22 Lei Li Structure and method for contact pads having a recessed bondable metal plug over of copper-metallized integrated circuits
US7135122B2 (en) * 2004-03-31 2006-11-14 Freudenberg-Nok General Partnership Polytetrafluoroethylene composites
JP2005288645A (ja) * 2004-04-01 2005-10-20 Hitachi Maxell Ltd 固定砥粒研削研磨用工具
US20050227590A1 (en) * 2004-04-09 2005-10-13 Chien-Min Sung Fixed abrasive tools and associated methods
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7968273B2 (en) * 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US7161247B2 (en) 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
US7514016B2 (en) * 2004-07-30 2009-04-07 Hitachi Global Storage Technologies Netherlands, Bv Methodology of chemical mechanical nanogrinding for ultra precision finishing of workpieces
US20070060026A1 (en) 2005-09-09 2007-03-15 Chien-Min Sung Methods of bonding superabrasive particles in an organic matrix
US7210988B2 (en) * 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
US20060068088A1 (en) * 2004-09-28 2006-03-30 Hae-Do Jeong Chemical mechanical polishing pad with micro-mold and production method thereof
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
US7404756B2 (en) * 2004-10-29 2008-07-29 3M Innovative Properties Company Process for manufacturing optical and semiconductor elements
US20060094322A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J Process for manufacturing a light emitting array
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7615479B1 (en) 2004-11-08 2009-11-10 Alien Technology Corporation Assembly comprising functional block deposited therein
TWI323741B (en) * 2004-12-16 2010-04-21 K C Tech Co Ltd Abrasive particles, polishing slurry, and producing method thereof
US6997785B1 (en) * 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
JP4745789B2 (ja) * 2004-12-27 2011-08-10 三ツ星ベルト株式会社 Ｖリブドベルト及びｖリブドベルトの製造方法
US7591865B2 (en) * 2005-01-28 2009-09-22 Saint-Gobain Abrasives, Inc. Method of forming structured abrasive article
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
US7538035B2 (en) * 2005-03-18 2009-05-26 Hitachi Global Storage Technologies Netherlands B.V. Lapping of gold pads in a liquid medium for work hardening the surface of the pads
KR100641348B1 (ko) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
US7169031B1 (en) 2005-07-28 2007-01-30 3M Innovative Properties Company Self-contained conditioning abrasive article
US7494519B2 (en) * 2005-07-28 2009-02-24 3M Innovative Properties Company Abrasive agglomerate polishing method
US20070049184A1 (en) * 2005-08-24 2007-03-01 International Business Machines Corporation Retaining ring structure for enhanced removal rate during fixed abrasive chemical mechanical polishing
US7438626B2 (en) * 2005-08-31 2008-10-21 Micron Technology, Inc. Apparatus and method for removing material from microfeature workpieces
US7618306B2 (en) * 2005-09-22 2009-11-17 3M Innovative Properties Company Conformable abrasive articles and methods of making and using the same
US20070066186A1 (en) * 2005-09-22 2007-03-22 3M Innovative Properties Company Flexible abrasive article and methods of making and using the same
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US7594845B2 (en) * 2005-10-20 2009-09-29 3M Innovative Properties Company Abrasive article and method of modifying the surface of a workpiece
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
WO2007094869A2 (en) * 2005-10-31 2007-08-23 Applied Materials, Inc. Electrochemical method for ecmp polishing pad conditioning
WO2008020867A2 (en) * 2005-11-21 2008-02-21 Q2100, Inc. Methods of making and using metal oxide nanoparticles
US20070116423A1 (en) * 2005-11-22 2007-05-24 3M Innovative Properties Company Arrays of optical elements and method of manufacturing same
US20070128991A1 (en) * 2005-12-07 2007-06-07 Yoon Il-Young Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same
US7226345B1 (en) 2005-12-09 2007-06-05 The Regents Of The University Of California CMP pad with designed surface features
WO2007079168A1 (en) * 2005-12-29 2007-07-12 3M Innovative Properties Company Abrasive tool including agglomerate particles and an elastomer, and related methods
US20070158207A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Methods for electrochemical processing with pre-biased cells
US7897061B2 (en) 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
DE602006018375D1 (de) * 2006-03-03 2010-12-30 Sandro Giovanni Giuseppe Ferronato
DE102006011113A1 (de) * 2006-03-08 2007-09-13 Tesa Ag Thermisch vernetzte Acrylat-Hotmelts mit organischen Füllstoffen
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
CN101426618B (zh) 2006-04-19 2013-05-15 东洋橡胶工业株式会社 抛光垫的制造方法
US7368066B2 (en) * 2006-05-31 2008-05-06 Cabot Microelectronics Corporation Gold CMP composition and method
US8759216B2 (en) 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
US20070298240A1 (en) * 2006-06-22 2007-12-27 Gobena Feben T Compressible abrasive article
KR100755598B1 (ko) * 2006-06-30 2007-09-06 삼성전기주식회사 질화물 반도체 발광소자 어레이
FI121654B (sv) 2006-07-10 2011-02-28 Kwh Mirka Ab Oy Förfarande för tillverkning av en flexibel sliprondell och en flexibel sliprondell
DE102006062871B4 (de) * 2006-07-13 2012-06-21 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102006062872B4 (de) * 2006-07-13 2012-06-14 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
KR101160064B1 (ko) * 2006-07-14 2012-06-26 생-고벵 아브라시프 기재를 갖지 않는 연마재 제품 및 광학 매체의 보수 방법
US20080014532A1 (en) * 2006-07-14 2008-01-17 3M Innovative Properties Company Laminate body, and method for manufacturing thin substrate using the laminate body
US8076185B1 (en) 2006-08-23 2011-12-13 Rockwell Collins, Inc. Integrated circuit protection and ruggedization coatings and methods
US7915527B1 (en) 2006-08-23 2011-03-29 Rockwell Collins, Inc. Hermetic seal and hermetic connector reinforcement and repair with low temperature glass coatings
US8166645B2 (en) 2006-08-23 2012-05-01 Rockwell Collins, Inc. Method for providing near-hermetically coated, thermally protected integrated circuit assemblies
US8581108B1 (en) 2006-08-23 2013-11-12 Rockwell Collins, Inc. Method for providing near-hermetically coated integrated circuit assemblies
US8084855B2 (en) * 2006-08-23 2011-12-27 Rockwell Collins, Inc. Integrated circuit tampering protection and reverse engineering prevention coatings and methods
US8617913B2 (en) 2006-08-23 2013-12-31 Rockwell Collins, Inc. Alkali silicate glass based coating and method for applying
US8174830B2 (en) * 2008-05-06 2012-05-08 Rockwell Collins, Inc. System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling
US8637980B1 (en) 2007-12-18 2014-01-28 Rockwell Collins, Inc. Adhesive applications using alkali silicate glass for electronics
US8591764B2 (en) * 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
US8083820B2 (en) 2006-12-22 2011-12-27 3M Innovative Properties Company Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same
US7497885B2 (en) 2006-12-22 2009-03-03 3M Innovative Properties Company Abrasive articles with nanoparticulate fillers and method for making and using them
US20080246076A1 (en) * 2007-01-03 2008-10-09 Nanosys, Inc. Methods for nanopatterning and production of nanostructures
US20090136785A1 (en) * 2007-01-03 2009-05-28 Nanosys, Inc. Methods for nanopatterning and production of magnetic nanostructures
US8057281B2 (en) * 2007-03-21 2011-11-15 3M Innovative Properties Company Methods of removing defects in surfaces
US8323072B1 (en) 2007-03-21 2012-12-04 3M Innovative Properties Company Method of polishing transparent armor
US20080233845A1 (en) 2007-03-21 2008-09-25 3M Innovative Properties Company Abrasive articles, rotationally reciprocating tools, and methods
KR101424622B1 (ko) * 2007-07-05 2014-08-01 에이씨엠 리서치 (상하이) 인코포레이티드 반도체 웨이퍼의 세정 장치 및 세정 방법
FI20075533L (fi) * 2007-07-10 2009-01-11 Kwh Mirka Ab Oy Hiomatuote ja menetelmä tämän valmistamiseksi
US20090017323A1 (en) * 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
US20090017248A1 (en) * 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
CN101878094A (zh) * 2007-09-28 2010-11-03 宋健民 具有镶嵌研磨块的cmp衬垫修整器和相关方法
KR20100093537A (ko) * 2007-10-31 2010-08-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 웨이퍼를 폴리싱하기 위한 조성물, 방법 및 공정
ITMC20070237A1 (it) * 2007-12-12 2009-06-13 Ghines Srl Utensile abrasivo perfezionato.
US8363189B2 (en) * 2007-12-18 2013-01-29 Rockwell Collins, Inc. Alkali silicate glass for displays
US8080073B2 (en) * 2007-12-20 2011-12-20 3M Innovative Properties Company Abrasive article having a plurality of precisely-shaped abrasive composites
JP5597140B2 (ja) * 2007-12-31 2014-10-01 スリーエム イノベイティブ プロパティズ カンパニー プラズマ処理された研磨物品及び同物品の作製方法
US8221089B2 (en) * 2008-09-12 2012-07-17 Rockwell Collins, Inc. Thin, solid-state mechanism for pumping electrically conductive liquids in a flexible thermal spreader
US8017872B2 (en) * 2008-05-06 2011-09-13 Rockwell Collins, Inc. System and method for proportional cooling with liquid metal
US8205337B2 (en) * 2008-09-12 2012-06-26 Rockwell Collins, Inc. Fabrication process for a flexible, thin thermal spreader
US8650886B2 (en) 2008-09-12 2014-02-18 Rockwell Collins, Inc. Thermal spreader assembly with flexible liquid cooling loop having rigid tubing sections and flexible tubing sections
US8616266B2 (en) 2008-09-12 2013-12-31 Rockwell Collins, Inc. Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid
JP2009302136A (ja) * 2008-06-10 2009-12-24 Panasonic Corp 半導体集積回路
US20090307986A1 (en) * 2008-06-12 2009-12-17 Hung-Hui Huang Polishing composition and making method thereof for polishing a substrate
JP5365522B2 (ja) * 2008-07-03 2013-12-11 旭硝子株式会社 ガラス基板の研磨方法及び製造方法
EP2327088B1 (de) 2008-08-28 2019-01-09 3M Innovative Properties Company Strukturierter schleifartikel, herstellungsverfahren dafür und verwendung in der waferplanarisierung
JP2010062269A (ja) * 2008-09-02 2010-03-18 Three M Innovative Properties Co ウェーハ積層体の製造方法、ウェーハ積層体製造装置、ウェーハ積層体、支持層剥離方法、及びウェーハの製造方法
US8119040B2 (en) 2008-09-29 2012-02-21 Rockwell Collins, Inc. Glass thick film embedded passive material
DE102009038942B4 (de) 2008-10-22 2022-06-23 Peter Wolters Gmbh Vorrichtung zur beidseitigen Bearbeitung von flachen Werkstücken sowie Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung mehrerer Halbleiterscheiben
DE102008059044B4 (de) * 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
US8754021B2 (en) * 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
US8801497B2 (en) 2009-04-30 2014-08-12 Rdc Holdings, Llc Array of abrasive members with resilient support
US20110159784A1 (en) * 2009-04-30 2011-06-30 First Principles LLC Abrasive article with array of gimballed abrasive members and method of use
US9221148B2 (en) 2009-04-30 2015-12-29 Rdc Holdings, Llc Method and apparatus for processing sliders for disk drives, and to various processing media for the same
TWI417169B (zh) * 2009-06-11 2013-12-01 Wei En Chen Cutting tools with the top of the complex cutting
USD610430S1 (en) 2009-06-18 2010-02-23 3M Innovative Properties Company Stem for a power tool attachment
US8173552B2 (en) * 2009-08-04 2012-05-08 Intel Corporation Method of fabricating an identification mark utilizing a liquid film assisted by a laser
JP2011071303A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体装置の製造方法
DE102009057593A1 (de) * 2009-12-09 2011-06-16 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
JP2013514159A (ja) * 2009-12-29 2013-04-25 サンーゴバン アブレイシブズ，インコーポレイティド 家庭用品表面の清掃方法
KR20130081229A (ko) 2010-05-11 2013-07-16 쓰리엠 이노베이티브 프로퍼티즈 컴파니 화학 기계적 평탄화를 위한 계면활성제를 포함하는 고정 연마 패드
DE102010032501B4 (de) 2010-07-28 2019-03-28 Siltronic Ag Verfahren und Vorrichtung zum Abrichten der Arbeitsschichten einer Doppelseiten-Schleifvorrichtung
DE102010042040A1 (de) 2010-10-06 2012-04-12 Siltronic Ag Verfahren zum Schleifen einer Halbleiterscheibe
DE102010050900A1 (de) 2010-11-10 2012-05-10 Esk Ceramics Gmbh & Co. Kg Bornitrid-Agglomerate, Verfahren zu deren Herstellung und deren Verwendung
CN102114615B (zh) * 2010-12-21 2012-08-08 珠海市吉昌稀土有限公司 稀土抛光盘
DE102011003006B4 (de) 2011-01-21 2013-02-07 Siltronic Ag Verfahren zur Bereitstellung jeweils einer ebenen Arbeitsschicht auf jeder der zwei Arbeitsscheiben einer Doppelseiten-Bearbeitungsvorrichtung
US20140311044A1 (en) * 2011-04-25 2014-10-23 Bando Chemical Industries, Ltd. Polishing film
US20120302148A1 (en) * 2011-05-23 2012-11-29 Rajeev Bajaj Polishing pad with homogeneous body having discrete protrusions thereon
JP5995965B2 (ja) * 2011-06-14 2016-09-21 スリーエム イノベイティブ プロパティズ カンパニー 内蔵型繊維性バフ研磨物品
DE102011080323A1 (de) 2011-08-03 2013-02-07 Siltronic Ag Verfahren zum Einebnen einer Halbleiterscheibe mit verbesserter Kantenschonung
DE102011082857B4 (de) 2011-09-16 2020-02-20 Siltronic Ag Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung wenigstens dreier Werkstücke
JP5712906B2 (ja) * 2011-11-15 2015-05-07 信越化学工業株式会社 基板の製造方法
US9067297B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with foundation layer and polishing surface layer
US9067298B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer
DE102011089570A1 (de) 2011-12-22 2013-06-27 Siltronic Ag Führungskäfig zum beidseitigen Schleifen von mindestens einem scheibenförmigen Werkstück zwischen zwei rotierenden Arbeitsscheiben einer Schleifvorrichtung, Verfahren zur Herstellung des Führungskäfigs und Verfahren zum gleichzeitigen beidseitigen Schleifen von scheibenförmigen Werkstücken unter Verwendung des Führungskäfigs
JP6033886B2 (ja) 2011-12-30 2016-11-30 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 成形研磨粒子および同粒子を形成する方法
CA3170246A1 (en) 2012-01-10 2013-07-18 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particles having complex shapes and methods of forming same
TWI573864B (zh) 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
US8916061B2 (en) 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
DE102012206708A1 (de) 2012-04-24 2013-10-24 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
KR101417274B1 (ko) * 2012-05-23 2014-07-09 삼성전자주식회사 연마패드 및 그 제조방법
US9597769B2 (en) 2012-06-04 2017-03-21 Nexplanar Corporation Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer
WO2014003953A1 (en) * 2012-06-27 2014-01-03 3M Innovative Properties Company Abrasive article
CN104428105A (zh) 2012-07-06 2015-03-18 3M创新有限公司 带涂层磨料制品
US9633863B2 (en) 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US9435915B1 (en) 2012-09-28 2016-09-06 Rockwell Collins, Inc. Antiglare treatment for glass
JP5982580B2 (ja) 2012-10-15 2016-08-31 サンーゴバン アブレイシブズ，インコーポレイティド 特定の形状を有する研磨粒子およびこのような粒子の形成方法
JP5373171B1 (ja) * 2012-10-20 2013-12-18 株式会社ナノテム 砥石およびそれを用いた研削・研磨装置
DE102013201663B4 (de) 2012-12-04 2020-04-23 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JP6016301B2 (ja) 2013-02-13 2016-10-26 昭和電工株式会社 単結晶ＳｉＣ基板の表面加工方法、その製造方法及び単結晶ＳｉＣ基板の表面加工用研削プレート
KR102313225B1 (ko) * 2013-03-12 2021-10-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접합된 연마 용품
DE102013205448A1 (de) 2013-03-27 2014-10-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
CA2907372C (en) * 2013-03-29 2017-12-12 Saint-Gobain Abrasives, Inc. Abrasive particles having particular shapes and methods of forming such particles
WO2014179419A1 (en) 2013-05-03 2014-11-06 Cabot Corporation Chemical mechanical planarization slurry composition comprising composite particles, process for removing material using said composition, cmp polishing pad and process for preparing said composition
KR102252673B1 (ko) * 2013-09-25 2021-05-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 다층화된 폴리싱 패드
JP2016537439A (ja) 2013-09-25 2016-12-01 スリーエム イノベイティブ プロパティズ カンパニー セラミック研磨材複合体研磨溶液
PL3052271T3 (pl) * 2013-10-04 2021-10-04 3M Innovative Properties Company Spojone wyroby ścierne i sposoby
US20160263722A1 (en) * 2013-10-18 2016-09-15 3M Innovative Properties Company Coated abrasive article and method of making the same
JP6561058B2 (ja) 2013-12-09 2019-08-14 スリーエム イノベイティブ プロパティズ カンパニー 集塊性研磨粒子、その粒子を含む研磨物品、及びその製造方法
JP6363202B2 (ja) 2013-12-20 2018-07-25 キャボット コーポレイションＣａｂｏｔ Ｃｏｒｐｏｒａｔｉｏｎ 化学機械平坦化用金属酸化物‐ポリマー複合粒子
US9566689B2 (en) 2013-12-31 2017-02-14 Saint-Gobain Abrasives, Inc. Abrasive article including shaped abrasive particles
US9771507B2 (en) 2014-01-31 2017-09-26 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particle including dopant material and method of forming same
WO2015153597A1 (en) 2014-04-03 2015-10-08 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
JP6358739B2 (ja) * 2014-04-08 2018-07-18 山口精研工業株式会社 研磨用組成物
JP6358740B2 (ja) * 2014-04-08 2018-07-18 山口精研工業株式会社 研磨用組成物
MX2016013465A (es) 2014-04-14 2017-02-15 Saint-Gobain Ceram & Plastics Inc Articulo abrasivo que incluye particulas abrasivas conformadas.
CN106376234B (zh) 2014-05-02 2019-11-05 3M创新有限公司 间断的结构化磨料制品以及抛光工件的方法
JP6611414B2 (ja) * 2014-05-27 2019-11-27 スリーエム イノベイティブ プロパティズ カンパニー 塗装表面の仕上げ方法及び研磨材料
US9149904B1 (en) 2014-06-13 2015-10-06 Seagate Technology Llc Platen for wafer polishing having diamond-ceramic composites
CN104308760B (zh) * 2014-10-13 2017-02-01 天津市职业大学 一种采用纳米聚集结构磨料的固定磨料抛光布
DE102014220888B4 (de) 2014-10-15 2019-02-14 Siltronic Ag Vorrichtung und Verfahren zum doppelseitigen Polieren von scheibenförmigen Werkstücken
US9914864B2 (en) 2014-12-23 2018-03-13 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particles and method of forming same
TWI634200B (zh) 2015-03-31 2018-09-01 聖高拜磨料有限公司 固定磨料物品及其形成方法
US10196551B2 (en) 2015-03-31 2019-02-05 Saint-Gobain Abrasives, Inc. Fixed abrasive articles and methods of forming same
TWI603813B (zh) * 2015-04-20 2017-11-01 中國砂輪企業股份有限公司 研磨工具及其製造方法
TWI609742B (zh) * 2015-04-20 2018-01-01 中國砂輪企業股份有限公司 研磨工具
CA2988012C (en) 2015-06-11 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Abrasive article including shaped abrasive particles
KR102596800B1 (ko) 2015-09-08 2023-10-31 쓰리엠 이노베이티브 프로퍼티즈 컴파니 가요성 연마 회전 공구
KR102591496B1 (ko) * 2015-09-08 2023-10-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 연마 응집체를 가진 연마 회전 공구
TWI769988B (zh) 2015-10-07 2022-07-11 美商3M新設資產公司 拋光墊與系統及其製造與使用方法
WO2017165342A1 (en) 2016-03-25 2017-09-28 Commscope Technologies Llc Antennas having lenses formed of lightweight dielectric materials and related dielectric materials
US11431100B2 (en) * 2016-03-25 2022-08-30 Commscope Technologies Llc Antennas having lenses formed of lightweight dielectric materials and related dielectric materials
KR102243356B1 (ko) 2016-05-10 2021-04-23 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 연마 입자 및 이의 형성 방법
KR102313436B1 (ko) 2016-05-10 2021-10-19 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 연마 입자들 및 그 형성 방법
CN109689298A (zh) * 2016-07-08 2019-04-26 圣戈班磨料磨具有限公司 磨料制品和其形成方法
EP4349896A2 (de) 2016-09-29 2024-04-10 Saint-Gobain Abrasives, Inc. Feste schleifartikel und verfahren zur formung davon
US10563105B2 (en) 2017-01-31 2020-02-18 Saint-Gobain Ceramics & Plastics, Inc. Abrasive article including shaped abrasive particles
KR102370056B1 (ko) * 2017-02-24 2022-03-03 일루미나, 인코포레이티드 탄산칼슘 슬러리
CN110719946B (zh) 2017-06-21 2022-07-15 圣戈本陶瓷及塑料股份有限公司 颗粒材料及其形成方法
US20200171619A1 (en) * 2017-08-25 2020-06-04 3M Innovative Properties Company Surface projection polishing pad
US11527835B2 (en) 2017-09-15 2022-12-13 Commscope Technologies Llc Methods of preparing a composite dielectric material
CA3083967C (en) * 2017-11-30 2022-07-26 Saint-Gobain Abrasives, Inc. Abrasive articles and methods of forming same
CN112105705B (zh) * 2018-05-10 2022-07-26 3M创新有限公司 包括软成形磨料颗粒的磨料制品
CN109321204A (zh) * 2018-10-24 2019-02-12 河南省力量钻石股份有限公司 一种多颗粒附聚型磨粒体、制备方法及其应用
TR201903909A2 (tr) * 2019-03-15 2020-10-21 Cukurova Kimya Enduestrisi A S Aşındırıcı elemanlar için bir reçine ve bunun için bir üretim yöntemi.
KR20220116556A (ko) 2019-12-27 2022-08-23 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 연마 물품 및 이의 형성 방법
DE102020104238A1 (de) 2020-02-18 2021-08-19 Berliner Glas GmbH Verfahren und Poliervorrichtung zur Bearbeitung eines plattenförmigen Bauteils, und plattenförmiges Bauteil, insbesondere elektrostatische Haltevorrichtung oder Immersions-Wafertafel
CN111879585B (zh) * 2020-07-27 2023-08-01 北京市永康药业有限公司 一种检测用药品自动研磨装置
US11434312B2 (en) 2020-12-15 2022-09-06 Canon Kabushiki Kaisha Photocurable composition for forming cured layers with high thermal stability
CN113929466B (zh) * 2021-12-16 2022-02-25 山东金鸿新材料股份有限公司 一种铝-碳化硼复合材料的制备方法
CN114406911A (zh) * 2021-12-31 2022-04-29 苏州赛尔科技有限公司 一种小尺寸mis封装材料切割用树脂超薄切割刀及制备方法
CN114605922B (zh) * 2022-03-18 2023-05-09 北京通美晶体技术股份有限公司 一种快速抛光的化学抛光液及其制备方法
CN115026729B (zh) * 2022-06-28 2023-06-20 东风柳州汽车有限公司 一种用于规圆精修珩磨头的加工方法

Family Cites Families (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1910444A (en) * 1931-02-13 1933-05-23 Carborundum Co Process of making abrasive materials
US2115897A (en) * 1935-05-15 1938-05-03 Carborundum Co Abrasive article
US2286208A (en) * 1940-12-03 1942-06-16 Carborundum Co Granular coated article and its manufacture
US2485295A (en) * 1947-09-17 1949-10-18 Adolph J Larson Pack of abrasive coated sheets
US2667435A (en) * 1951-09-21 1954-01-26 Westinghouse Electric Corp Low temperature fabrication of molybdenum and alloys thereof
US2952951A (en) * 1952-07-28 1960-09-20 Simpson Harry Arthur Abrasive or like materials and articles
US2755607A (en) * 1953-06-01 1956-07-24 Norton Co Coated abrasives
US3188265A (en) * 1957-11-12 1965-06-08 Minnesota Mining & Mfg Packaging films
US2888785A (en) * 1958-06-30 1959-06-02 Thelma E Kellican Eraser cleaner
US3041156A (en) * 1959-07-22 1962-06-26 Norton Co Phenolic resin bonded grinding wheels
US3324608A (en) * 1965-01-27 1967-06-13 Thompson Proc Co Inc Facing assembly for lens grinding tools and the like
US3605349A (en) * 1969-05-08 1971-09-20 Frederick B Anthon Abrasive finishing article
US3594865A (en) * 1969-07-10 1971-07-27 American Velcro Inc Apparatus for molding plastic shapes in molding recesses formed in moving endless wire dies
US3849949A (en) * 1972-10-10 1974-11-26 Minnesota Mining & Mfg Roll of pressure sensitive adhesive, adhesive coated abrasive discs and dispenser
US3916584A (en) * 1973-03-22 1975-11-04 Minnesota Mining & Mfg Spheroidal composite particle and method of making
US3875703A (en) * 1973-12-26 1975-04-08 Joseph V Clemente Flexible sanding disc unit
US3911562A (en) * 1974-01-14 1975-10-14 Signetics Corp Method of chemical polishing of planar silicon structures having filled grooves therein
US4138228A (en) * 1977-02-02 1979-02-06 Ralf Hoehn Abrasive of a microporous polymer matrix with inorganic particles thereon
US4314827A (en) * 1979-06-29 1982-02-09 Minnesota Mining And Manufacturing Company Non-fused aluminum oxide-based abrasive mineral
US4663890A (en) * 1982-05-18 1987-05-12 Gmn Georg Muller Nurnberg Gmbh Method for machining workpieces of brittle hard material into wafers
US4509581A (en) * 1982-05-20 1985-04-09 Wirtz Manufacturing Company, Inc. Machine for continuously casting battery grids
US5527368C1 (en) 1983-03-11 2001-05-08 Norton Co Coated abrasives with rapidly curable adhesives
US4563388A (en) * 1983-03-28 1986-01-07 Minnesota Mining And Manufacturing Company Polyolefin substrate coated with acrylic-type normally tacky and pressure-sensitive adhesive and a method of making same
US4623364A (en) * 1984-03-23 1986-11-18 Norton Company Abrasive material and method for preparing the same
US4642126A (en) * 1985-02-11 1987-02-10 Norton Company Coated abrasives with rapidly curable adhesives and controllable curvature
CA1254238A (en) * 1985-04-30 1989-05-16 Alvin P. Gerk Process for durable sol-gel produced alumina-based ceramics, abrasive grain and abrasive products
US4652275A (en) * 1985-08-07 1987-03-24 Minnesota Mining And Manufacturing Company Erodable agglomerates and abrasive products containing the same
US4652274A (en) * 1985-08-07 1987-03-24 Minnesota Mining And Manufacturing Company Coated abrasive product having radiation curable binder
US4671851A (en) * 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4773920B1 (en) * 1985-12-16 1995-05-02 Minnesota Mining & Mfg Coated abrasive suitable for use as a lapping material.
US4749617A (en) * 1985-12-18 1988-06-07 Minnesota Mining And Manufacturing Company Composite article containing rigid layers
US4770671A (en) * 1985-12-30 1988-09-13 Minnesota Mining And Manufacturing Company Abrasive grits formed of ceramic containing oxides of aluminum and yttrium, method of making and using the same and products made therewith
US4644703A (en) * 1986-03-13 1987-02-24 Norton Company Plural layered coated abrasive
US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US4751138A (en) * 1986-08-11 1988-06-14 Minnesota Mining And Manufacturing Company Coated abrasive having radiation curable binder
US4799939A (en) * 1987-02-26 1989-01-24 Minnesota Mining And Manufacturing Company Erodable agglomerates and abrasive products containing the same
US4735632A (en) * 1987-04-02 1988-04-05 Minnesota Mining And Manufacturing Company Coated abrasive binder containing ternary photoinitiator system
US4881951A (en) * 1987-05-27 1989-11-21 Minnesota Mining And Manufacturing Co. Abrasive grits formed of ceramic containing oxides of aluminum and rare earth metal, method of making and products made therewith
US4933234A (en) * 1987-08-13 1990-06-12 Minnesota Mining And Manufacturing Company Primed polymeric surfaces for cyanoacrylate adhesives
US4906523A (en) * 1987-09-24 1990-03-06 Minnesota Mining And Manufacturing Company Primer for surfaces containing inorganic oxide
JP2707264B2 (ja) * 1987-12-28 1998-01-28 ハイ・コントロール・リミテッド 研磨シートおよびその製造方法
US4930266A (en) * 1988-02-26 1990-06-05 Minnesota Mining And Manufacturing Company Abrasive sheeting having individually positioned abrasive granules
US4974373A (en) * 1988-03-14 1990-12-04 Tokyo Magnetic Printing Co., Ltd. Abrasive tools
US5104929A (en) * 1988-04-11 1992-04-14 Minnesota Mining And Manufacturing Company Abrasion resistant coatings comprising silicon dioxide dispersions
US4885332A (en) * 1988-04-11 1989-12-05 Minnesota Mining And Manufacturing Company Photocurable abrasion resistant coatings comprising silicon dioxide dispersions
US5254194A (en) * 1988-05-13 1993-10-19 Minnesota Mining And Manufacturing Company Coated abrasive sheet material with loop material for attachment incorporated therein
CH675250A5 (de) * 1988-06-17 1990-09-14 Lonza Ag
US4879258A (en) * 1988-08-31 1989-11-07 Texas Instruments Incorporated Integrated circuit planarization by mechanical polishing
US5011508A (en) * 1988-10-14 1991-04-30 Minnesota Mining And Manufacturing Company Shelling-resistant abrasive grain, a method of making the same, and abrasive products
US4903440A (en) * 1988-11-23 1990-02-27 Minnesota Mining And Manufacturing Company Abrasive product having binder comprising an aminoplast resin
US4959265A (en) * 1989-04-17 1990-09-25 Minnesota Mining And Manufacturing Company Pressure-sensitive adhesive tape fastener for releasably attaching an object to a fabric
US5014468A (en) * 1989-05-05 1991-05-14 Norton Company Patterned coated abrasive for fine surface finishing
US5061294A (en) * 1989-05-15 1991-10-29 Minnesota Mining And Manufacturing Company Abrasive article with conductive, doped, conjugated, polymer coat and method of making same
US5011513A (en) * 1989-05-31 1991-04-30 Norton Company Single step, radiation curable ophthalmic fining pad
US4997461A (en) * 1989-09-11 1991-03-05 Norton Company Nitrified bonded sol gel sintered aluminous abrasive bodies
US5141790A (en) * 1989-11-20 1992-08-25 Minnesota Mining And Manufacturing Company Repositionable pressure-sensitive adhesive tape
US5199227A (en) * 1989-12-20 1993-04-06 Minnesota Mining And Manufacturing Company Surface finishing tape
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5020283A (en) * 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5104421B1 (en) * 1990-03-23 1993-11-16 Fujimi Abrasives Co.,Ltd. Polishing method of goods and abrasive pad therefor
US5085671A (en) * 1990-05-02 1992-02-04 Minnesota Mining And Manufacturing Company Method of coating alumina particles with refractory material, abrasive particles made by the method and abrasive products containing the same
US5607488A (en) 1990-05-21 1997-03-04 Wiand; Ronald C. Molded abrasive article and process
US5174795A (en) * 1990-05-21 1992-12-29 Wiand Ronald C Flexible abrasive pad with ramp edge surface
US5137542A (en) * 1990-08-08 1992-08-11 Minnesota Mining And Manufacturing Company Abrasive printed with an electrically conductive ink
US5370718A (en) * 1990-08-22 1994-12-06 Hitachi Maxell, Ltd. Abrasive tape
US5077870A (en) * 1990-09-21 1992-01-07 Minnesota Mining And Manufacturing Company Mushroom-type hook strip for a mechanical fastener
US5152917B1 (en) * 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
US5107626A (en) * 1991-02-06 1992-04-28 Minnesota Mining And Manufacturing Company Method of providing a patterned surface on a substrate
US5378251A (en) * 1991-02-06 1995-01-03 Minnesota Mining And Manufacturing Company Abrasive articles and methods of making and using same
US5236472A (en) * 1991-02-22 1993-08-17 Minnesota Mining And Manufacturing Company Abrasive product having a binder comprising an aminoplast binder
DE69206685T2 (de) * 1991-06-06 1996-07-04 Commissariat Energie Atomique Poliermaschine mit einem gespannten Feinschleifband und einem verbesserten Werkstückträgerkopf
US5197999A (en) * 1991-09-30 1993-03-30 National Semiconductor Corporation Polishing pad for planarization
US5320706A (en) * 1991-10-15 1994-06-14 Texas Instruments Incorporated Removing slurry residue from semiconductor wafer planarization
US5219462A (en) * 1992-01-13 1993-06-15 Minnesota Mining And Manufacturing Company Abrasive article having abrasive composite members positioned in recesses
US5437754A (en) * 1992-01-13 1995-08-01 Minnesota Mining And Manufacturing Company Abrasive article having precise lateral spacing between abrasive composite members
US5368618A (en) * 1992-01-22 1994-11-29 Minnesota Mining And Manufacturing Company Method of making a coated abrasive article
US5256170A (en) * 1992-01-22 1993-10-26 Minnesota Mining And Manufacturing Company Coated abrasive article and method of making same
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US5445996A (en) * 1992-05-26 1995-08-29 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor device having a amorphous layer
US5203884A (en) * 1992-06-04 1993-04-20 Minnesota Mining And Manufacturing Company Abrasive article having vanadium oxide incorporated therein
US5213591A (en) * 1992-07-28 1993-05-25 Ahmet Celikkaya Abrasive grain, method of making same and abrasive products
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5307593A (en) * 1992-08-31 1994-05-03 Minnesota Mining And Manufacturing Company Method of texturing rigid memory disks using an abrasive article
US5232875A (en) * 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
ATE159883T1 (de) * 1992-12-17 1997-11-15 Minnesota Mining & Mfg Aufschlaemmungen mit reduzierter viskositaet, daraus hergestellte schleifgegenstaende und verfahren zur herstellung der gegenstaende
US5342419A (en) * 1992-12-31 1994-08-30 Minnesota Mining And Manufacturing Company Abrasive composites having a controlled rate of erosion, articles incorporating same, and methods of making and using same
US5435816A (en) * 1993-01-14 1995-07-25 Minnesota Mining And Manufacturing Company Method of making an abrasive article
US5424224A (en) * 1993-01-19 1995-06-13 Texas Instruments Incorporated Method of surface protection of a semiconductor wafer during polishing
CA2113318A1 (en) * 1993-01-28 1994-07-29 Robert J. Jantschek Abrasive attachment system for rotative abrading applications
JP2966235B2 (ja) * 1993-06-04 1999-10-25 古舘 忠夫 可塑性柔軟砥石
GB9309972D0 (en) 1993-05-14 1993-06-30 De Beers Ind Diamond Tool insert
US5549962A (en) * 1993-06-30 1996-08-27 Minnesota Mining And Manufacturing Company Precisely shaped particles and method of making the same
JP2622069B2 (ja) * 1993-06-30 1997-06-18 三菱マテリアル株式会社 研磨布のドレッシング装置
US5378252A (en) * 1993-09-03 1995-01-03 Minnesota Mining And Manufacturing Company Abrasive articles
US5489235A (en) * 1993-09-13 1996-02-06 Minnesota Mining And Manufacturing Company Abrasive article and method of making same
US5454844A (en) * 1993-10-29 1995-10-03 Minnesota Mining And Manufacturing Company Abrasive article, a process of making same, and a method of using same to finish a workpiece surface
US5453312A (en) * 1993-10-29 1995-09-26 Minnesota Mining And Manufacturing Company Abrasive article, a process for its manufacture, and a method of using it to reduce a workpiece surface
US5441598A (en) * 1993-12-16 1995-08-15 Motorola, Inc. Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5391210A (en) * 1993-12-16 1995-02-21 Minnesota Mining And Manufacturing Company Abrasive article
US5417725A (en) * 1994-02-01 1995-05-23 Graves; Gordon C. Penetration and fixture freeing agent
US5422316A (en) * 1994-03-18 1995-06-06 Memc Electronic Materials, Inc. Semiconductor wafer polisher and method
USD366365S (en) 1994-05-11 1996-01-23 Minnesota Mining And Manufacturing Company Coated abrasive sheet article
US5607341A (en) 1994-08-08 1997-03-04 Leach; Michael A. Method and structure for polishing a wafer during manufacture of integrated circuits
US5643044A (en) 1994-11-01 1997-07-01 Lund; Douglas E. Automatic chemical and mechanical polishing system for semiconductor wafers
US5525100A (en) * 1994-11-09 1996-06-11 Norton Company Abrasive products
JP2616736B2 (ja) 1995-01-25 1997-06-04 日本電気株式会社 ウエーハ研磨装置
JP3305557B2 (ja) 1995-04-10 2002-07-22 大日本印刷株式会社 研磨テープ、その製造方法および研磨テープ用塗工剤
US5609517A (en) 1995-11-20 1997-03-11 International Business Machines Corporation Composite polishing pad
US5645736A (en) 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
US5624303A (en) 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
US5645682A (en) 1996-05-28 1997-07-08 Micron Technology, Inc. Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers
US5782675A (en) 1996-10-21 1998-07-21 Micron Technology, Inc. Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers

Also Published As

Publication number Publication date
EP0852063A1 (de) 1998-07-08
IL123520A0 (en) 1998-10-30
DE69633339T2 (de) 2005-09-22
KR19990063679A (ko) 1999-07-26
WO1997011484A1 (en) 1997-03-27
CN1099127C (zh) 2003-01-15
EP0852063B1 (de) 2004-09-08
CA2231159A1 (en) 1997-03-27
CN1197543A (zh) 1998-10-28
MY120676A (en) 2005-11-30
US5958794A (en) 1999-09-28
JP2005260261A (ja) 2005-09-22
IL123520A (en) 2002-02-10
MX9802098A (es) 1998-05-31
JP4515316B2 (ja) 2010-07-28
JPH11512874A (ja) 1999-11-02
AU7241396A (en) 1997-04-09
JP2009076927A (ja) 2009-04-09
KR100456208B1 (ko) 2005-01-24

Similar Documents

Publication Publication Date Title
DE69633339D1 (de) Verfahren zum verändern einer freiliegenden oberfläche eines halbleiterwafers
DE69619602D1 (de) Verfahren zum Herstellen eines Halbleiter-Substrats
DE69616981T2 (de) Verfahren zur ätzung eines polysiliziummusters
DE69635530D1 (de) Verfahren zum Trocknen eines Substrats
DE69515020T2 (de) Verfahren zum Züchten eines Halbleiterkristalls
DE69815024D1 (de) Verfahren zum Beschichten eines Bauelementes
DE19681744T1 (de) Verfahren und Vorrichtung zum Charakterisieren einer Oberfläche
DE69528611T2 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE794839T1 (de) Verfahren zur beschichtung einer oberfläche
DE69634326D1 (de) Verfahren zum Authentifizieren eines Anwendungsprogramms
DE69334194D1 (de) Verfahren zum Erzeugen einer Halbleitervorrichtung
DE59400189D1 (de) Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE69603598T2 (de) Verfahren und vorrichtung zum anbringen eines gegenstandes an einer glasoberfläche
DE69417508D1 (de) Verfahren zum Aufbringen einer reibungsreduzierenden Schicht
DE69622824T2 (de) Verfahren und Vorrichtung zum Auflösen einer Oberflächenschicht eines Halbleitersubstrats
DE69216637D1 (de) Verfahren zur oberflächenbehandlung eines werkstückes
DE69329369D1 (de) Verfahren zum Ätzen eines Silizium-Substrats
DE59405190D1 (de) Verfahren zum galvanischen aufbringen einer oberflächenbeschichtung
DE69606549T2 (de) Verfahren zur qualifizierung einer bohrlochvermessung
DE59810219D1 (de) Verfahren zum verkleben eines bauelements mit einer oberfläche
DE69636264D1 (de) Verfahren zum Erzeugen eines Poststückes
DE69616735T2 (de) Verfahren zum schrittbetrieb eines roboters
DE19680150D2 (de) Verfahren zum Aufbringen einer vorgegebenen Menge eines Sensibilisators einf eine Oberfläche
DE59409429D1 (de) Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE69618548T2 (de) Verfahren zum chemisch mechanischen Polieren eines Elektronikteils

Legal Events

Date Code Title Description
8364 No opposition during term of opposition