DE69630387D1 - Phononenresonator - Google Patents

Phononenresonator

Info

Publication number
DE69630387D1
DE69630387D1 DE69630387T DE69630387T DE69630387D1 DE 69630387 D1 DE69630387 D1 DE 69630387D1 DE 69630387 T DE69630387 T DE 69630387T DE 69630387 T DE69630387 T DE 69630387T DE 69630387 D1 DE69630387 D1 DE 69630387D1
Authority
DE
Germany
Prior art keywords
phonon
phonons
present
resonator
participating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69630387T
Other languages
English (en)
Other versions
DE69630387T2 (de
Inventor
G Brown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PAINTER III BLAND A
Original Assignee
PAINTER III BLAND A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PAINTER III BLAND A filed Critical PAINTER III BLAND A
Publication of DE69630387D1 publication Critical patent/DE69630387D1/de
Application granted granted Critical
Publication of DE69630387T2 publication Critical patent/DE69630387T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H01S5/3031—Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
DE69630387T 1995-02-17 1996-02-14 Phononenresonator Expired - Fee Related DE69630387T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/393,380 US5917195A (en) 1995-02-17 1995-02-17 Phonon resonator and method for its production
US393380 1995-02-17
PCT/US1996/002052 WO1996025767A2 (en) 1995-02-17 1996-02-14 Phonon resonator and method for its production

Publications (2)

Publication Number Publication Date
DE69630387D1 true DE69630387D1 (de) 2003-11-20
DE69630387T2 DE69630387T2 (de) 2004-07-15

Family

ID=23554464

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69630387T Expired - Fee Related DE69630387T2 (de) 1995-02-17 1996-02-14 Phononenresonator

Country Status (9)

Country Link
US (1) US5917195A (de)
EP (1) EP0838093B1 (de)
JP (1) JP3974654B2 (de)
AT (1) ATE252276T1 (de)
AU (1) AU5170096A (de)
CA (1) CA2213210A1 (de)
DE (1) DE69630387T2 (de)
ES (1) ES2208732T3 (de)
WO (1) WO1996025767A2 (de)

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US6146601A (en) * 1999-10-28 2000-11-14 Eagle-Picher Industries, Inc. Enrichment of silicon or germanium isotopes
US7223914B2 (en) 1999-05-04 2007-05-29 Neokismet Llc Pulsed electron jump generator
US6649823B2 (en) * 1999-05-04 2003-11-18 Neokismet, L.L.C. Gas specie electron-jump chemical energy converter
US6678305B1 (en) * 1999-05-04 2004-01-13 Noekismet, L.L.C. Surface catalyst infra red laser
US7371962B2 (en) 1999-05-04 2008-05-13 Neokismet, Llc Diode energy converter for chemical kinetic electron energy transfer
EP1107044A1 (de) 1999-11-30 2001-06-13 Hitachi Europe Limited Photonisches Bauelement
JP3422482B2 (ja) * 2000-02-17 2003-06-30 日本電気株式会社 単一光子発生装置
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
AU2000264174A1 (en) * 2000-08-15 2002-02-25 Silex Systems Limited A semiconductor isotope superlattice
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WO2002058219A2 (en) * 2001-01-17 2002-07-25 Neokismet, L.L.C. Electron-jump chemical energy converter
US7122735B2 (en) * 2001-06-29 2006-10-17 Neokismet, L.L.C. Quantum well energizing method and apparatus
US7119400B2 (en) * 2001-07-05 2006-10-10 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
US20040171226A1 (en) * 2001-07-05 2004-09-02 Burden Stephen J. Isotopically pure silicon-on-insulator wafers and method of making same
US6867459B2 (en) * 2001-07-05 2005-03-15 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
US6653658B2 (en) * 2001-07-05 2003-11-25 Isonics Corporation Semiconductor wafers with integrated heat spreading layer
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US6834152B2 (en) * 2001-09-10 2004-12-21 California Institute Of Technology Strip loaded waveguide with low-index transition layer
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US6829269B2 (en) 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
DE60220803T2 (de) * 2002-11-29 2008-03-06 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur für Infrarotbereich und Herstellungsverfahren
WO2004051761A2 (en) * 2002-12-02 2004-06-17 Institute For Scientific Research, Inc. Isotopically enriched piezoelectric devices and method for making the same
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JP2005083862A (ja) * 2003-09-08 2005-03-31 Canon Inc 光学薄膜およびこれを用いたミラー
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US7176112B2 (en) * 2004-09-21 2007-02-13 Atmel Corporation Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material
JP4550613B2 (ja) * 2005-02-21 2010-09-22 古河電気工業株式会社 異方熱伝導材料
US7826688B1 (en) 2005-10-21 2010-11-02 Luxtera, Inc. Enhancing the sensitivity of resonant optical modulating and switching devices
US7619238B2 (en) * 2006-02-04 2009-11-17 Sensor Electronic Technology, Inc. Heterostructure including light generating structure contained in potential well
JP2007238862A (ja) * 2006-03-10 2007-09-20 Denso Corp 熱輸送媒体
JP5004072B2 (ja) * 2006-05-17 2012-08-22 学校法人慶應義塾 イオン照射効果評価方法、プロセスシミュレータ及びデバイスシミュレータ
JP2008063411A (ja) * 2006-09-06 2008-03-21 Denso Corp 熱輸送流体、熱輸送構造、及び熱輸送方法
US20100247884A1 (en) 2007-10-03 2010-09-30 National Institute Of Advanced Industrial Science Stacked body of isotope diamond
US8450704B2 (en) * 2009-12-04 2013-05-28 Massachusetts Institute Of Technology Phonon-enhanced crystal growth and lattice healing
US9806226B2 (en) 2010-06-18 2017-10-31 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
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US9817153B2 (en) 2012-05-22 2017-11-14 Nxt Energy Solutions, Inc. Gravity transducer system and method including a junction with a first metal and a second metal
US9437892B2 (en) 2012-07-26 2016-09-06 Quswami, Inc. System and method for converting chemical energy into electrical energy using nano-engineered porous network materials
JP5677385B2 (ja) 2012-08-24 2015-02-25 株式会社東芝 フォノン誘導放出装置
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US8847204B2 (en) 2013-02-26 2014-09-30 Seoul National University R&Db Foundation Germanium electroluminescence device and fabrication method of the same
US9268092B1 (en) * 2013-03-14 2016-02-23 Sandia Corporation Guided wave opto-acoustic device
US8975617B2 (en) * 2013-06-03 2015-03-10 Dan Berco Quantum interference device
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KR102181323B1 (ko) * 2016-04-06 2020-11-23 한국전자통신연구원 레이저 장치 및 이의 제조방법
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TWI806553B (zh) * 2021-04-21 2023-06-21 美商安托梅拉公司 包含超晶格及富集矽２８磊晶層之半導體元件及相關方法
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Also Published As

Publication number Publication date
EP0838093A2 (de) 1998-04-29
ATE252276T1 (de) 2003-11-15
AU5170096A (en) 1996-09-04
CA2213210A1 (en) 1996-08-22
JP3974654B2 (ja) 2007-09-12
EP0838093B1 (de) 2003-10-15
WO1996025767A2 (en) 1996-08-22
JPH11500580A (ja) 1999-01-12
WO1996025767A3 (en) 1996-09-26
ES2208732T3 (es) 2004-06-16
US5917195A (en) 1999-06-29
DE69630387T2 (de) 2004-07-15

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