DE69630387D1 - Phononenresonator - Google Patents
PhononenresonatorInfo
- Publication number
- DE69630387D1 DE69630387D1 DE69630387T DE69630387T DE69630387D1 DE 69630387 D1 DE69630387 D1 DE 69630387D1 DE 69630387 T DE69630387 T DE 69630387T DE 69630387 T DE69630387 T DE 69630387T DE 69630387 D1 DE69630387 D1 DE 69630387D1
- Authority
- DE
- Germany
- Prior art keywords
- phonon
- phonons
- present
- resonator
- participating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003993 interaction Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
- H01S5/3031—Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3223—IV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3223—IV compounds
- H01S5/3224—Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US393380 | 1995-02-17 | ||
US08/393,380 US5917195A (en) | 1995-02-17 | 1995-02-17 | Phonon resonator and method for its production |
PCT/US1996/002052 WO1996025767A2 (en) | 1995-02-17 | 1996-02-14 | Phonon resonator and method for its production |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69630387D1 true DE69630387D1 (de) | 2003-11-20 |
DE69630387T2 DE69630387T2 (de) | 2004-07-15 |
Family
ID=23554464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69630387T Expired - Fee Related DE69630387T2 (de) | 1995-02-17 | 1996-02-14 | Phononenresonator |
Country Status (9)
Country | Link |
---|---|
US (1) | US5917195A (de) |
EP (1) | EP0838093B1 (de) |
JP (1) | JP3974654B2 (de) |
AT (1) | ATE252276T1 (de) |
AU (1) | AU5170096A (de) |
CA (1) | CA2213210A1 (de) |
DE (1) | DE69630387T2 (de) |
ES (1) | ES2208732T3 (de) |
WO (1) | WO1996025767A2 (de) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0895292A1 (de) * | 1997-07-29 | 1999-02-03 | Hitachi Europe Limited | Elektrolumineszentes Bauteil |
FR2789496B1 (fr) * | 1999-02-10 | 2002-06-07 | Commissariat Energie Atomique | Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif |
US6146601A (en) * | 1999-10-28 | 2000-11-14 | Eagle-Picher Industries, Inc. | Enrichment of silicon or germanium isotopes |
US7371962B2 (en) | 1999-05-04 | 2008-05-13 | Neokismet, Llc | Diode energy converter for chemical kinetic electron energy transfer |
US7223914B2 (en) | 1999-05-04 | 2007-05-29 | Neokismet Llc | Pulsed electron jump generator |
US6649823B2 (en) * | 1999-05-04 | 2003-11-18 | Neokismet, L.L.C. | Gas specie electron-jump chemical energy converter |
US6678305B1 (en) * | 1999-05-04 | 2004-01-13 | Noekismet, L.L.C. | Surface catalyst infra red laser |
EP1107044A1 (de) * | 1999-11-30 | 2001-06-13 | Hitachi Europe Limited | Photonisches Bauelement |
JP3422482B2 (ja) * | 2000-02-17 | 2003-06-30 | 日本電気株式会社 | 単一光子発生装置 |
US6734453B2 (en) | 2000-08-08 | 2004-05-11 | Translucent Photonics, Inc. | Devices with optical gain in silicon |
WO2002015279A1 (en) * | 2000-08-15 | 2002-02-21 | Silex Systems Limited | A semiconductor isotope superlattice |
AUPR083300A0 (en) * | 2000-10-17 | 2000-11-09 | Silex Systems Limited | An isotope structure formed in an indriect band gap semiconductor material |
AU2002236994A1 (en) * | 2001-01-17 | 2002-07-30 | Neokismet, L.L.C. | Electron-jump chemical energy converter |
US7122735B2 (en) * | 2001-06-29 | 2006-10-17 | Neokismet, L.L.C. | Quantum well energizing method and apparatus |
US6653658B2 (en) * | 2001-07-05 | 2003-11-25 | Isonics Corporation | Semiconductor wafers with integrated heat spreading layer |
US6867459B2 (en) * | 2001-07-05 | 2005-03-15 | Isonics Corporation | Isotopically pure silicon-on-insulator wafers and method of making same |
US20040171226A1 (en) * | 2001-07-05 | 2004-09-02 | Burden Stephen J. | Isotopically pure silicon-on-insulator wafers and method of making same |
US7119400B2 (en) * | 2001-07-05 | 2006-10-10 | Isonics Corporation | Isotopically pure silicon-on-insulator wafers and method of making same |
WO2003023474A1 (en) * | 2001-09-10 | 2003-03-20 | California Institute Of Technology | Tunable resonant cavity based on the field effect in semiconductors |
US6834152B2 (en) * | 2001-09-10 | 2004-12-21 | California Institute Of Technology | Strip loaded waveguide with low-index transition layer |
JP2003292398A (ja) * | 2002-03-29 | 2003-10-15 | Canon Inc | 単結晶シリコンウェファの製造方法 |
US6829269B2 (en) | 2002-05-21 | 2004-12-07 | University Of Massachusetts | Systems and methods using phonon mediated intersubband laser |
DE60220803T2 (de) * | 2002-11-29 | 2008-03-06 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiterstruktur für Infrarotbereich und Herstellungsverfahren |
WO2004051761A2 (en) * | 2002-12-02 | 2004-06-17 | Institute For Scientific Research, Inc. | Isotopically enriched piezoelectric devices and method for making the same |
US7209618B2 (en) * | 2003-03-25 | 2007-04-24 | Hewlett-Packard Development Company, L.P. | Scanner transparent media adapter using fiber optic face plate |
JP2005083862A (ja) * | 2003-09-08 | 2005-03-31 | Canon Inc | 光学薄膜およびこれを用いたミラー |
US7315679B2 (en) * | 2004-06-07 | 2008-01-01 | California Institute Of Technology | Segmented waveguide structures |
US7176112B2 (en) * | 2004-09-21 | 2007-02-13 | Atmel Corporation | Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material |
JP4550613B2 (ja) * | 2005-02-21 | 2010-09-22 | 古河電気工業株式会社 | 異方熱伝導材料 |
US7826688B1 (en) | 2005-10-21 | 2010-11-02 | Luxtera, Inc. | Enhancing the sensitivity of resonant optical modulating and switching devices |
US7619238B2 (en) * | 2006-02-04 | 2009-11-17 | Sensor Electronic Technology, Inc. | Heterostructure including light generating structure contained in potential well |
JP2007238862A (ja) * | 2006-03-10 | 2007-09-20 | Denso Corp | 熱輸送媒体 |
JP5004072B2 (ja) * | 2006-05-17 | 2012-08-22 | 学校法人慶應義塾 | イオン照射効果評価方法、プロセスシミュレータ及びデバイスシミュレータ |
JP2008063411A (ja) * | 2006-09-06 | 2008-03-21 | Denso Corp | 熱輸送流体、熱輸送構造、及び熱輸送方法 |
EP2196564B1 (de) | 2007-10-03 | 2013-03-06 | National Institute of Advanced Industrial Science And Technology | Isotopendiamantlaminat |
US8450704B2 (en) * | 2009-12-04 | 2013-05-28 | Massachusetts Institute Of Technology | Phonon-enhanced crystal growth and lattice healing |
US9806226B2 (en) | 2010-06-18 | 2017-10-31 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
US8927959B2 (en) | 2010-06-18 | 2015-01-06 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
US8907322B2 (en) | 2010-06-18 | 2014-12-09 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
US8739859B2 (en) | 2010-10-04 | 2014-06-03 | Toyota Motor Engineering & Manufacturing North America, Inc. | Reversible thermal rectifiers, temperature control systems and vehicles incorporating the same |
KR101265178B1 (ko) | 2011-12-23 | 2013-05-15 | 서울대학교산학협력단 | 간접 밴드갭 반도체를 이용한 전기발광소자 |
MX2014007901A (es) * | 2011-12-30 | 2015-04-16 | James Dalton Bell | Fibra optica alterada isotopicamente. |
US9059388B2 (en) * | 2012-03-21 | 2015-06-16 | University Of Maryland College Park | Phoniton systems, devices, and methods |
US9817153B2 (en) | 2012-05-22 | 2017-11-14 | Nxt Energy Solutions, Inc. | Gravity transducer system and method including a junction with a first metal and a second metal |
US9437892B2 (en) | 2012-07-26 | 2016-09-06 | Quswami, Inc. | System and method for converting chemical energy into electrical energy using nano-engineered porous network materials |
JP5677385B2 (ja) | 2012-08-24 | 2015-02-25 | 株式会社東芝 | フォノン誘導放出装置 |
US9291297B2 (en) | 2012-12-19 | 2016-03-22 | Elwha Llc | Multi-layer phononic crystal thermal insulators |
US8847204B2 (en) | 2013-02-26 | 2014-09-30 | Seoul National University R&Db Foundation | Germanium electroluminescence device and fabrication method of the same |
US9268092B1 (en) * | 2013-03-14 | 2016-02-23 | Sandia Corporation | Guided wave opto-acoustic device |
US8975617B2 (en) * | 2013-06-03 | 2015-03-10 | Dan Berco | Quantum interference device |
WO2016157184A1 (en) * | 2015-03-30 | 2016-10-06 | Yeda Research And Development Co. Ltd. | All-optical single-atom photon router controlled by a single photon |
JP2017092075A (ja) * | 2015-11-02 | 2017-05-25 | 株式会社ソディック | 発光素子 |
US10097281B1 (en) | 2015-11-18 | 2018-10-09 | Hypres, Inc. | System and method for cryogenic optoelectronic data link |
KR102181323B1 (ko) * | 2016-04-06 | 2020-11-23 | 한국전자통신연구원 | 레이저 장치 및 이의 제조방법 |
JP6278423B2 (ja) * | 2016-06-30 | 2018-02-14 | 株式会社ソディック | 発光素子 |
TWI806553B (zh) * | 2021-04-21 | 2023-06-21 | 美商安托梅拉公司 | 包含超晶格及富集矽28磊晶層之半導體元件及相關方法 |
US11810784B2 (en) | 2021-04-21 | 2023-11-07 | Atomera Incorporated | Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
US11923418B2 (en) | 2021-04-21 | 2024-03-05 | Atomera Incorporated | Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
CN117616434A (zh) | 2021-04-27 | 2024-02-27 | 量子源实验室有限公司 | 量子计算 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5593256A (en) * | 1979-01-10 | 1980-07-15 | Sony Corp | Semiconductor device |
JPS56164588A (en) * | 1980-05-23 | 1981-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light amplifier |
FR2485810A1 (fr) * | 1980-06-24 | 1981-12-31 | Thomson Csf | Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede |
US4349796A (en) * | 1980-12-15 | 1982-09-14 | Bell Telephone Laboratories, Incorporated | Devices incorporating phonon filters |
FR2511887A1 (fr) * | 1981-08-28 | 1983-03-04 | Commissariat Energie Atomique | Procede de separation isotopique par transfert d'energie vibrationnelle |
US4469977A (en) * | 1982-10-19 | 1984-09-04 | The United States Of America As Represented By The Secretary Of The Navy | Superlattice ultrasonic wave generator |
US4591889A (en) * | 1984-09-14 | 1986-05-27 | At&T Bell Laboratories | Superlattice geometry and devices |
US4785340A (en) * | 1985-03-29 | 1988-11-15 | Director-General Of The Agency Of Industrial Science And Technology | Semiconductor device having doping multilayer structure |
JPS61274322A (ja) * | 1985-05-29 | 1986-12-04 | Mitsubishi Electric Corp | 半導体素子の製造方法 |
JPH0783029B2 (ja) * | 1986-11-04 | 1995-09-06 | ソニー株式会社 | 半導体装置 |
JPS63269573A (ja) * | 1987-04-27 | 1988-11-07 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合を有する半導体装置 |
JP2616926B2 (ja) * | 1987-07-09 | 1997-06-04 | 新日本製鐵株式会社 | 放射線検出素子 |
DE3852180T2 (de) * | 1987-12-23 | 1995-04-06 | British Telecomm | Halbleiterheterostruktur. |
US5012302A (en) * | 1990-03-30 | 1991-04-30 | Motorola, Inc. | Enhanced conductivity quantum well having resonant charge coupling |
US5061970A (en) * | 1990-06-04 | 1991-10-29 | Motorola, Inc. | Energy band leveling modulation doped quantum well |
US5144409A (en) * | 1990-09-05 | 1992-09-01 | Yale University | Isotopically enriched semiconductor devices |
JPH0541355A (ja) * | 1991-08-05 | 1993-02-19 | Fujitsu Ltd | 変調半導体材料およびそれを用いた半導体装置 |
US5436468A (en) * | 1992-03-17 | 1995-07-25 | Fujitsu Limited | Ordered mixed crystal semiconductor superlattice device |
-
1995
- 1995-02-17 US US08/393,380 patent/US5917195A/en not_active Expired - Fee Related
-
1996
- 1996-02-14 AT AT96908469T patent/ATE252276T1/de not_active IP Right Cessation
- 1996-02-14 JP JP52513796A patent/JP3974654B2/ja not_active Expired - Fee Related
- 1996-02-14 CA CA002213210A patent/CA2213210A1/en not_active Abandoned
- 1996-02-14 ES ES96908469T patent/ES2208732T3/es not_active Expired - Lifetime
- 1996-02-14 DE DE69630387T patent/DE69630387T2/de not_active Expired - Fee Related
- 1996-02-14 AU AU51700/96A patent/AU5170096A/en not_active Abandoned
- 1996-02-14 EP EP96908469A patent/EP0838093B1/de not_active Expired - Lifetime
- 1996-02-14 WO PCT/US1996/002052 patent/WO1996025767A2/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
ATE252276T1 (de) | 2003-11-15 |
US5917195A (en) | 1999-06-29 |
JPH11500580A (ja) | 1999-01-12 |
EP0838093A2 (de) | 1998-04-29 |
DE69630387T2 (de) | 2004-07-15 |
EP0838093B1 (de) | 2003-10-15 |
ES2208732T3 (es) | 2004-06-16 |
CA2213210A1 (en) | 1996-08-22 |
AU5170096A (en) | 1996-09-04 |
JP3974654B2 (ja) | 2007-09-12 |
WO1996025767A3 (en) | 1996-09-26 |
WO1996025767A2 (en) | 1996-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |