DE69626259T2 - Magnetischer Speicher und zugehöriges Verfahren - Google Patents

Magnetischer Speicher und zugehöriges Verfahren

Info

Publication number
DE69626259T2
DE69626259T2 DE69626259T DE69626259T DE69626259T2 DE 69626259 T2 DE69626259 T2 DE 69626259T2 DE 69626259 T DE69626259 T DE 69626259T DE 69626259 T DE69626259 T DE 69626259T DE 69626259 T2 DE69626259 T2 DE 69626259T2
Authority
DE
Germany
Prior art keywords
magnetic memory
associated method
magnetic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69626259T
Other languages
English (en)
Other versions
DE69626259D1 (de
Inventor
Eugene Chen
Saied N Tehrani
Mark Durlam
Xiaodong T Zhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69626259D1 publication Critical patent/DE69626259D1/de
Publication of DE69626259T2 publication Critical patent/DE69626259T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
DE69626259T 1995-11-24 1996-11-07 Magnetischer Speicher und zugehöriges Verfahren Expired - Fee Related DE69626259T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/562,482 US5659499A (en) 1995-11-24 1995-11-24 Magnetic memory and method therefor

Publications (2)

Publication Number Publication Date
DE69626259D1 DE69626259D1 (de) 2003-03-27
DE69626259T2 true DE69626259T2 (de) 2003-07-24

Family

ID=24246461

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69626259T Expired - Fee Related DE69626259T2 (de) 1995-11-24 1996-11-07 Magnetischer Speicher und zugehöriges Verfahren

Country Status (5)

Country Link
US (1) US5659499A (de)
EP (1) EP0776011B1 (de)
JP (1) JP3831461B2 (de)
KR (1) KR100424962B1 (de)
DE (1) DE69626259T2 (de)

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US5898612A (en) * 1997-05-22 1999-04-27 Motorola, Inc. Magnetic memory cell with increased GMR ratio
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US6555858B1 (en) 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
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US6358756B1 (en) * 2001-02-07 2002-03-19 Micron Technology, Inc. Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
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US6780652B2 (en) * 2001-03-15 2004-08-24 Micron Technology, Inc. Self-aligned MRAM contact and method of fabrication
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KR100442959B1 (ko) * 2001-05-22 2004-08-04 주식회사 하이닉스반도체 마그네틱 램 및 그 형성방법
US6430084B1 (en) * 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer
US6430085B1 (en) 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with shape and induced anisotropy ferromagnetic cladding layer and method of manufacture
US6510080B1 (en) * 2001-08-28 2003-01-21 Micron Technology Inc. Three terminal magnetic random access memory
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6636436B2 (en) * 2001-10-25 2003-10-21 Hewlett-Packard Development Company, L.P. Isolation of memory cells in cross point arrays
US6559511B1 (en) * 2001-11-13 2003-05-06 Motorola, Inc. Narrow gap cladding field enhancement for low power programming of a MRAM device
US6720597B2 (en) * 2001-11-13 2004-04-13 Motorola, Inc. Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers
US6525957B1 (en) 2001-12-21 2003-02-25 Motorola, Inc. Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
TWI266443B (en) * 2002-01-16 2006-11-11 Toshiba Corp Magnetic memory
JP3596536B2 (ja) 2002-03-26 2004-12-02 ソニー株式会社 磁気メモリ装置およびその製造方法
US6897532B1 (en) * 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US6783995B2 (en) 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
US6724652B2 (en) * 2002-05-02 2004-04-20 Micron Technology, Inc. Low remanence flux concentrator for MRAM devices
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6714441B1 (en) 2002-09-17 2004-03-30 Micron Technology, Inc. Bridge-type magnetic random access memory (MRAM) latch
JP3873015B2 (ja) * 2002-09-30 2007-01-24 株式会社東芝 磁気メモリ
JP3906139B2 (ja) * 2002-10-16 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
JP2004153181A (ja) * 2002-10-31 2004-05-27 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP3863484B2 (ja) * 2002-11-22 2006-12-27 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US6909633B2 (en) * 2002-12-09 2005-06-21 Applied Spintronics Technology, Inc. MRAM architecture with a flux closed data storage layer
US6870759B2 (en) * 2002-12-09 2005-03-22 Applied Spintronics Technology, Inc. MRAM array with segmented magnetic write lines
US6909630B2 (en) * 2002-12-09 2005-06-21 Applied Spintronics Technology, Inc. MRAM memories utilizing magnetic write lines
US6943038B2 (en) * 2002-12-19 2005-09-13 Freescale Semiconductor, Inc. Method for fabricating a flux concentrating system for use in a magnetoelectronics device
US6864551B2 (en) * 2003-02-05 2005-03-08 Applied Spintronics Technology, Inc. High density and high programming efficiency MRAM design
US6812538B2 (en) * 2003-02-05 2004-11-02 Applied Spintronics Technology, Inc. MRAM cells having magnetic write lines with a stable magnetic state at the end regions
US7002228B2 (en) * 2003-02-18 2006-02-21 Micron Technology, Inc. Diffusion barrier for improving the thermal stability of MRAM devices
US6940749B2 (en) * 2003-02-24 2005-09-06 Applied Spintronics Technology, Inc. MRAM array with segmented word and bit lines
US20040175845A1 (en) * 2003-03-03 2004-09-09 Molla Jaynal A. Method of forming a flux concentrating layer of a magnetic device
US6963500B2 (en) * 2003-03-14 2005-11-08 Applied Spintronics Technology, Inc. Magnetic tunneling junction cell array with shared reference layer for MRAM applications
EP1610386A4 (de) * 2003-03-31 2009-04-01 Japan Science & Tech Agency Tunneltransistor mit spin-abhängiger transfercharakteristik und nichtflüchtiger speicher damit
US7067866B2 (en) * 2003-03-31 2006-06-27 Applied Spintronics Technology, Inc. MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture
US6933550B2 (en) * 2003-03-31 2005-08-23 Applied Spintronics Technology, Inc. Method and system for providing a magnetic memory having a wrapped write line
KR100552682B1 (ko) * 2003-06-02 2006-02-20 삼성전자주식회사 고밀도 자기저항 메모리 및 그 제조방법
US7477538B2 (en) * 2003-06-20 2009-01-13 Nec Corporation Magnetic random access memory
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US7112454B2 (en) 2003-10-14 2006-09-26 Micron Technology, Inc. System and method for reducing shorting in memory cells
US20050095855A1 (en) * 2003-11-05 2005-05-05 D'urso John J. Compositions and methods for the electroless deposition of NiFe on a work piece
US20050141148A1 (en) * 2003-12-02 2005-06-30 Kabushiki Kaisha Toshiba Magnetic memory
US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
US7310202B2 (en) * 2004-03-25 2007-12-18 Seagate Technology Llc Magnetic recording head with clad coil
US7339818B2 (en) 2004-06-04 2008-03-04 Micron Technology, Inc. Spintronic devices with integrated transistors
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US7738287B2 (en) * 2007-03-27 2010-06-15 Grandis, Inc. Method and system for providing field biased magnetic memory devices
US7833806B2 (en) * 2009-01-30 2010-11-16 Everspin Technologies, Inc. Structure and method for fabricating cladded conductive lines in magnetic memories
US8169816B2 (en) * 2009-09-15 2012-05-01 Magic Technologies, Inc. Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory
US8390283B2 (en) 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
JP5794892B2 (ja) * 2010-11-26 2015-10-14 ルネサスエレクトロニクス株式会社 磁気メモリ
US9472749B2 (en) 2014-03-20 2016-10-18 International Business Machines Corporation Armature-clad MRAM device

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US4780848A (en) * 1986-06-03 1988-10-25 Honeywell Inc. Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
JPH0293373A (ja) * 1988-09-29 1990-04-04 Nippon Denso Co Ltd 電流検出器
US5039655A (en) * 1989-07-28 1991-08-13 Ampex Corporation Thin film memory device having superconductor keeper for eliminating magnetic domain creep
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect

Also Published As

Publication number Publication date
JP3831461B2 (ja) 2006-10-11
JPH09204770A (ja) 1997-08-05
EP0776011A2 (de) 1997-05-28
KR100424962B1 (ko) 2004-10-14
EP0776011A3 (de) 1997-11-19
DE69626259D1 (de) 2003-03-27
KR970030858A (ko) 1997-06-26
EP0776011B1 (de) 2003-02-19
US5659499A (en) 1997-08-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee