DE69625969T2 - Transmissive Flüssigkristall-Anzeigevorrichtung und Herstellungsverfahren - Google Patents

Transmissive Flüssigkristall-Anzeigevorrichtung und Herstellungsverfahren

Info

Publication number
DE69625969T2
DE69625969T2 DE69625969T DE69625969T DE69625969T2 DE 69625969 T2 DE69625969 T2 DE 69625969T2 DE 69625969 T DE69625969 T DE 69625969T DE 69625969 T DE69625969 T DE 69625969T DE 69625969 T2 DE69625969 T2 DE 69625969T2
Authority
DE
Germany
Prior art keywords
manufacturing
liquid crystal
display device
crystal display
transmissive liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69625969T
Other languages
English (en)
Other versions
DE69625969D1 (de
Inventor
Takayuki Shimada
Masaru Kajitani
Masaya Okamoto
Naofumi Kondo
Mikio Katayama
Yoshikazu Sakuhana
Akihiro Yamamoto
Yukinobu Nakata
Hirohiko Nishiki
Yoshinori Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26515618&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69625969(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69625969D1 publication Critical patent/DE69625969D1/de
Publication of DE69625969T2 publication Critical patent/DE69625969T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
DE69625969T 1995-08-11 1996-08-12 Transmissive Flüssigkristall-Anzeigevorrichtung und Herstellungsverfahren Expired - Lifetime DE69625969T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20636795 1995-08-11
JP25404395 1995-09-29

Publications (2)

Publication Number Publication Date
DE69625969D1 DE69625969D1 (de) 2003-03-06
DE69625969T2 true DE69625969T2 (de) 2003-10-02

Family

ID=26515618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69625969T Expired - Lifetime DE69625969T2 (de) 1995-08-11 1996-08-12 Transmissive Flüssigkristall-Anzeigevorrichtung und Herstellungsverfahren

Country Status (6)

Country Link
US (5) US6052162A (de)
EP (4) EP2090926A1 (de)
JP (1) JP3247870B2 (de)
KR (3) KR970011972A (de)
CN (2) CN1278175C (de)
DE (1) DE69625969T2 (de)

Families Citing this family (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100242438B1 (ko) * 1996-08-30 2000-02-01 윤종용 능동 행렬형 액정 표시 장치
US6262784B1 (en) * 1993-06-01 2001-07-17 Samsung Electronics Co., Ltd Active matrix display devices having improved opening and contrast ratios and methods of forming same and a storage electrode line
US5641974A (en) 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
KR970011972A (ko) * 1995-08-11 1997-03-29 쯔지 하루오 투과형 액정 표시 장치 및 그 제조 방법
KR100338480B1 (ko) * 1995-08-19 2003-01-24 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법
JP3418653B2 (ja) 1995-09-28 2003-06-23 シャープ株式会社 アクティブマトリクス型液晶表示装置
US5940732A (en) 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
JP3312101B2 (ja) * 1996-07-02 2002-08-05 シャープ株式会社 液晶表示装置
US6940566B1 (en) * 1996-11-26 2005-09-06 Samsung Electronics Co., Ltd. Liquid crystal displays including organic passivation layer contacting a portion of the semiconductor layer between source and drain regions
US6226061B1 (en) 1997-03-25 2001-05-01 Sharp Kabushiki Kaisha Liquid crystal display device having phase different plates
JPH117035A (ja) * 1997-04-23 1999-01-12 Sharp Corp 液晶表示装置及びその製造方法
JP3966614B2 (ja) * 1997-05-29 2007-08-29 三星電子株式会社 広視野角液晶表示装置
JPH11143379A (ja) * 1997-09-03 1999-05-28 Semiconductor Energy Lab Co Ltd 半導体表示装置補正システムおよび半導体表示装置の補正方法
US6359672B2 (en) 1997-10-20 2002-03-19 Guardian Industries Corp. Method of making an LCD or X-ray imaging device with first and second insulating layers
US6011274A (en) * 1997-10-20 2000-01-04 Ois Optical Imaging Systems, Inc. X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween
DE69839935D1 (de) 1997-11-25 2008-10-09 Nec Lcd Technologies Ltd Aktiv-Matrix-Flüssigkristallanzeige und deren Herstellungsverfahren
DE19754784B4 (de) * 1997-12-10 2004-02-12 Robert Bosch Gmbh Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren mit Speicherkapazitäten
JP3391717B2 (ja) * 1997-12-24 2003-03-31 シャープ株式会社 反射型液晶表示装置
KR100268308B1 (ko) * 1997-12-30 2000-10-16 구본준 액정표시장치 기판 및 그 제조방법
JP3592535B2 (ja) * 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6335781B2 (en) * 1998-12-17 2002-01-01 Lg Electronics, Inc. Method for manufacturing an LCD in which a photoresist layer is at least 1.2 times thicker than the passivation layer
KR100723599B1 (ko) * 1999-02-25 2007-06-04 가부시키가이샤 아드반스트 디스프레이 반사형 액정표시장치 및 그 제조방법과 반사형액정표시장치의 제조용 마스크
JP3683463B2 (ja) * 1999-03-11 2005-08-17 シャープ株式会社 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ
JP3916823B2 (ja) * 1999-04-07 2007-05-23 シャープ株式会社 アクティブマトリクス基板およびその製造方法、並びにフラットパネル型イメージセンサ
KR100290015B1 (ko) * 1999-05-13 2001-05-15 구본준, 론 위라하디락사 박막트랜지스터형 광 감지센서와 그 제조방법
US7288420B1 (en) * 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
JP3490375B2 (ja) 1999-06-28 2004-01-26 シャープ株式会社 液晶表示装置の製造方法
KR100498630B1 (ko) 1999-09-01 2005-07-01 엘지.필립스 엘시디 주식회사 액정표시장치
US6654073B1 (en) * 1999-09-01 2003-11-25 Nec Lcd Technologies, Ltd. Liquid crystal display having storage capacitance electrodes and method of fabricating the same
KR100326881B1 (ko) * 1999-10-15 2002-03-13 구본준, 론 위라하디락사 액정표시소자 및 그 제조방법
JP2001188255A (ja) * 1999-10-19 2001-07-10 Sharp Corp 液晶表示素子及びその製造方法
KR20010065038A (ko) * 1999-12-21 2001-07-11 구본준, 론 위라하디락사 박막트랜지스터 및 액정표시장치용 어레이기판 제조방법
KR100325079B1 (ko) * 1999-12-22 2002-03-02 주식회사 현대 디스플레이 테크놀로지 고개구율 및 고투과율 액정표시장치의 제조방법
KR100690001B1 (ko) * 2000-02-21 2007-03-08 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
US7023021B2 (en) 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2001312222A (ja) 2000-02-25 2001-11-09 Sharp Corp アクティブマトリクス基板およびその製造方法並びに該基板を用いた表示装置および撮像装置
US6583829B2 (en) * 2000-03-06 2003-06-24 Hitachi, Ltd. Liquid crystal display having an opening in each pixel electrode corresponding to each storage line
KR20010088329A (ko) * 2000-03-07 2001-09-26 가네꼬 히사시 액정표시장치 및 그 제조방법
US6789910B2 (en) 2000-04-12 2004-09-14 Semiconductor Energy Laboratory, Co., Ltd. Illumination apparatus
JP4677654B2 (ja) * 2000-04-19 2011-04-27 日本電気株式会社 透過型液晶表示装置及びその製造方法
JP3719939B2 (ja) * 2000-06-02 2005-11-24 シャープ株式会社 アクティブマトリクス基板およびその製造方法ならびに表示装置および撮像装置
JP4278834B2 (ja) * 2000-06-02 2009-06-17 株式会社日立製作所 液晶表示装置とその製造方法
KR100628257B1 (ko) * 2000-10-20 2006-09-27 엘지.필립스 엘시디 주식회사 반사형 및 반투과형 ｌｃｄ의 구조
US6511869B2 (en) * 2000-12-05 2003-01-28 International Business Machines Corporation Thin film transistors with self-aligned transparent pixel electrode
KR100776509B1 (ko) * 2000-12-30 2007-11-16 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
US7095460B2 (en) * 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
JP2002268084A (ja) * 2001-03-08 2002-09-18 Sharp Corp アクティブマトリクス基板及びその製造方法
JP3841198B2 (ja) * 2001-03-13 2006-11-01 日本電気株式会社 アクティブマトリクス基板及びその製造方法
JP2002296609A (ja) * 2001-03-29 2002-10-09 Nec Corp 液晶表示装置及びその製造方法
GB0112563D0 (en) * 2001-05-23 2001-07-18 Koninl Philips Electronics Nv Active plate
GB0112561D0 (en) 2001-05-23 2001-07-18 Koninl Philips Electronics Nv Active plate
JP3946547B2 (ja) * 2001-06-05 2007-07-18 シャープ株式会社 アクティブマトリクス基板および表示装置ならびに検出装置
KR100433209B1 (ko) * 2001-06-25 2004-05-27 엘지.필립스 엘시디 주식회사 액정표시장치의 어래이 기판 및 그 제조방법
KR100437825B1 (ko) * 2001-07-06 2004-06-26 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판
KR100807582B1 (ko) * 2001-07-30 2008-02-28 엘지.필립스 엘시디 주식회사 스토리지 커패시터 및 이를 구비한 액정 표시장치
JP4197404B2 (ja) * 2001-10-02 2008-12-17 シャープ株式会社 液晶表示装置およびその製造方法
US7215830B2 (en) * 2002-01-24 2007-05-08 Robert Bosch Gmbh Method and device for transforming an object image
US6984476B2 (en) 2002-04-15 2006-01-10 Sharp Kabushiki Kaisha Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device
JP4248835B2 (ja) 2002-04-15 2009-04-02 シャープ株式会社 液晶表示装置用基板及びそれを備えた液晶表示装置
KR100878236B1 (ko) * 2002-06-12 2009-01-13 삼성전자주식회사 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법
KR100878237B1 (ko) 2002-08-01 2009-01-13 삼성전자주식회사 박막 트랜지스터 기판
US20040196423A1 (en) * 2003-04-03 2004-10-07 Toppoly Optoelectronics Corp. Color filter for liquid crystal display
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
KR100938887B1 (ko) * 2003-06-30 2010-01-27 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP4087306B2 (ja) * 2003-08-28 2008-05-21 シャープ株式会社 液晶表示装置
JP3958306B2 (ja) * 2003-09-02 2007-08-15 シャープ株式会社 液晶表示装置
KR100992136B1 (ko) * 2003-10-20 2010-11-04 삼성전자주식회사 박막 트랜지스터 표시판
JP4055764B2 (ja) * 2004-01-26 2008-03-05 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4088619B2 (ja) * 2004-01-28 2008-05-21 シャープ株式会社 アクティブマトリクス基板及び表示装置
JP4293038B2 (ja) * 2004-04-15 2009-07-08 セイコーエプソン株式会社 液晶装置及び電子機器
TWI282969B (en) * 2004-04-29 2007-06-21 Au Optronics Corp Thin film transistor array and fabricating method thereof
JP4522145B2 (ja) 2004-05-25 2010-08-11 シャープ株式会社 表示装置用基板、その製造方法及び表示装置
US7834948B2 (en) 2004-06-11 2010-11-16 Sharp Kabushiki Kaisha Active matrix substrate and liquid crystal display device
KR101112539B1 (ko) * 2004-07-27 2012-02-15 삼성전자주식회사 다중 도메인 액정 표시 장치 및 그에 사용되는 표시판
US20060054889A1 (en) * 2004-09-16 2006-03-16 Jang-Soo Kim Thin film transistor array panel
WO2006054386A1 (ja) * 2004-11-17 2006-05-26 Sharp Kabushiki Kaisha アクティブマトリクス基板及び表示装置
EP1662322B1 (de) 2004-11-26 2017-01-11 Toray Industries, Inc. Positive lichtempfindliche Siloxanzusammensetzung, damit gebildeter Härtungsfilm und Vorrichtung mit dem Härtungsfilm
KR101085139B1 (ko) * 2004-12-03 2011-11-21 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
JP4484881B2 (ja) 2004-12-16 2010-06-16 シャープ株式会社 アクティブマトリクス基板、表示装置、液晶表示装置およびテレビジョン装置
KR101122232B1 (ko) 2004-12-17 2012-03-19 삼성전자주식회사 박막 트랜지스터 표시판 및 액정 표시 장치
US7497973B2 (en) * 2005-02-02 2009-03-03 Lumination Llc Red line emitting phosphor materials for use in LED applications
TWI255363B (en) 2005-02-04 2006-05-21 Quanta Display Inc Liquid crystal display
KR101100887B1 (ko) * 2005-03-17 2012-01-02 삼성전자주식회사 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
WO2006117929A1 (ja) * 2005-04-26 2006-11-09 Sharp Kabushiki Kaisha アクティブマトリクス基板の製造方法、アクティブマトリクス基板、及び、液晶表示装置
KR20060114251A (ko) * 2005-04-29 2006-11-06 삼성전자주식회사 액정 표시 장치의 제조 방법 및 이에 사용되는 배향막 형성장치
KR100808747B1 (ko) * 2005-05-23 2008-02-29 샤프 가부시키가이샤 액티브 매트릭스 기판, 표시 장치 및 화소 결함 수정 방법
JP4405557B2 (ja) * 2005-09-22 2010-01-27 シャープ株式会社 アクティブマトリクス基板、表示装置、テレビジョン装置、アクティブマトリクス基板の製造方法、及び表示装置の製造方法
KR20070035234A (ko) * 2005-09-27 2007-03-30 삼성전자주식회사 표시 기판의 제조 방법 및 이를 제조하기 위한 제조 장치
JP2007183452A (ja) * 2006-01-10 2007-07-19 Epson Imaging Devices Corp 半透過型液晶表示装置
CN101365980B (zh) * 2006-02-10 2010-11-24 夏普株式会社 液晶显示面板和液晶显示装置
JP4584332B2 (ja) * 2006-02-24 2010-11-17 シャープ株式会社 アクティブマトリクス基板、表示装置、テレビジョン受像機
KR20070109192A (ko) * 2006-05-10 2007-11-15 삼성전자주식회사 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 장치
US8974918B2 (en) 2006-07-04 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP4812837B2 (ja) * 2006-07-14 2011-11-09 シャープ株式会社 アクティブマトリクス基板およびそれを備えた表示装置
JP4818839B2 (ja) 2006-07-19 2011-11-16 株式会社 日立ディスプレイズ 液晶表示装置及びその製造方法
EP2385423A1 (de) * 2006-07-19 2011-11-09 Sharp Kabushiki Kaisha Aktivmatrixsubstrat, Flüssigkristallanzeige, Fernsehempfänger
WO2008015813A1 (fr) * 2006-08-02 2008-02-07 Sharp Kabushiki Kaisha Substrat à matrice active et dispositif d'affichage doté de celui-ci
CN101600992B (zh) 2007-03-27 2011-08-31 夏普株式会社 液晶显示装置和液晶显示装置用基板
KR100899426B1 (ko) * 2007-09-14 2009-05-27 삼성모바일디스플레이주식회사 유기 전계 발광표시장치 제조방법
TWI390275B (zh) * 2007-11-29 2013-03-21 Au Optronics Corp 液晶顯示器以及液晶驅動方法
US8059241B2 (en) * 2008-03-13 2011-11-15 Sony Corporation Liquid crystal display and method of manufacturing the same
JP4674612B2 (ja) * 2008-03-28 2011-04-20 パナソニック電工株式会社 マッサージ椅子
JP4844767B2 (ja) * 2008-10-03 2011-12-28 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
JP4661935B2 (ja) * 2008-10-15 2011-03-30 ソニー株式会社 液晶表示装置
US8234654B2 (en) * 2008-10-20 2012-07-31 Xerox Corporation Load balancing using distributed printing devices
JP2010157493A (ja) * 2008-12-02 2010-07-15 Sony Corp 表示装置およびその製造方法
CN101770124B (zh) * 2008-12-30 2014-09-10 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
JP5299768B2 (ja) * 2009-01-26 2013-09-25 Ｎｌｔテクノロジー株式会社 薄膜トランジスタアレイ基板及びその製造方法並びに液晶表示装置
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102246529B1 (ko) 2009-09-16 2021-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5179670B2 (ja) * 2009-10-16 2013-04-10 シャープ株式会社 液晶表示装置
FR2951875B1 (fr) 2009-10-23 2012-05-18 Commissariat Energie Atomique Procede de fabrication d?un ecran a tres haute resolution utilisant une couche conductrice anisotropique et emissive
CN102062967B (zh) * 2009-11-13 2013-03-13 上海天马微电子有限公司 液晶显示装置
JP5243664B2 (ja) * 2011-01-31 2013-07-24 シャープ株式会社 液晶表示パネル及びその製造方法、並びにアレイ基板及びその製造方法
US8502313B2 (en) * 2011-04-21 2013-08-06 Fairchild Semiconductor Corporation Double layer metal (DLM) power MOSFET
TWI446531B (zh) 2011-05-17 2014-07-21 Au Optronics Corp 畫素結構及電性橋接結構
KR20130001513A (ko) * 2011-06-27 2013-01-04 삼성디스플레이 주식회사 표시장치 및 그 제조방법
JP6122275B2 (ja) * 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
JP5917127B2 (ja) * 2011-12-19 2016-05-11 株式会社ジャパンディスプレイ 液晶表示装置
KR101924995B1 (ko) * 2012-01-20 2018-12-05 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그를 포함하는 유기 발광 표시 장치, 박막 트랜지스터 표시판의 단선 방법
JP6306278B2 (ja) * 2012-04-09 2018-04-04 Jsr株式会社 半導体素子、半導体基板、感放射線性樹脂組成物、保護膜および表示素子
US9368521B2 (en) 2012-11-30 2016-06-14 Sharp Kabushiki Kaisha TFT substrate
JP6182398B2 (ja) * 2013-04-10 2017-08-16 東京応化工業株式会社 透明絶縁膜形成用組成物
CN103913884A (zh) * 2013-06-28 2014-07-09 上海天马微电子有限公司 一种彩膜基板及其制造方法、显示面板
KR20150137214A (ko) * 2014-05-28 2015-12-09 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
CN105810749B (zh) * 2014-12-31 2018-12-21 清华大学 N型薄膜晶体管
KR20170029896A (ko) 2015-09-08 2017-03-16 모멘티브퍼포먼스머티리얼스코리아 주식회사 유기 실록산계 고분자 및 이를 포함하는 감광성 수지 조성물
JP2019117342A (ja) * 2017-12-27 2019-07-18 シャープ株式会社 アクティブマトリックス基板、アクティブマトリックス基板の製造方法および液晶表示装置

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3602782A (en) * 1969-12-05 1971-08-31 Thomas Klein Conductor-insulator-semiconductor fieldeffect transistor with semiconductor layer embedded in dielectric underneath interconnection layer
US4551416A (en) * 1981-05-22 1985-11-05 At&T Bell Laboratories Process for preparing semiconductors using photosensitive bodies
JPS58172685A (ja) 1982-04-01 1983-10-11 セイコーエプソン株式会社 液晶表示体装置
JPS58184929A (ja) * 1982-04-23 1983-10-28 Citizen Watch Co Ltd 立体視装置
JPS59158553A (ja) * 1983-02-28 1984-09-08 Toshiba Corp 光学的固体装置
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
US4745042A (en) * 1984-04-19 1988-05-17 Matsushita Electric Industrial Co., Ltd. Water-soluble photopolymer and method of forming pattern by use of the same
JPS61156025A (ja) * 1984-12-27 1986-07-15 Fujitsu Ltd 表示装置
US4688896A (en) * 1985-03-04 1987-08-25 General Electric Company Information conversion device with auxiliary address lines for enhancing manufacturing yield
JPS62135810A (ja) * 1985-12-10 1987-06-18 Nippon Kayaku Co Ltd 液晶表示素子
US4857907A (en) * 1986-04-30 1989-08-15 501 Sharp Kabushiki Kaisha Liquid-crystal display device
JPS6435351A (en) * 1987-07-31 1989-02-06 Nikkiso Co Ltd Method for diagnosing water quality analyzer for water quality control of thermal power plant
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US4923948A (en) * 1987-09-24 1990-05-08 Japan Synthetic Rubber Co., Ltd. Curable composition
JP2622267B2 (ja) * 1988-03-23 1997-06-18 日立化成工業株式会社 感光性樹脂組成物
KR930004972B1 (ko) * 1988-07-29 1993-06-11 니혼샤신 인사츠 가부시키가이샤 칼라필터의 제조방법
JPH02190826A (ja) * 1989-01-20 1990-07-26 Ricoh Co Ltd 液晶駆動用二端子素子
JPH02216123A (ja) * 1989-02-17 1990-08-29 Citizen Watch Co Ltd カラー液晶パネルの構造
JPH032826A (ja) * 1989-05-31 1991-01-09 Toshiba Corp 液晶表示素子
US5246782A (en) * 1990-12-10 1993-09-21 The Dow Chemical Company Laminates of polymers having perfluorocyclobutane rings and polymers containing perfluorocyclobutane rings
DE69133246T2 (de) * 1990-05-11 2004-04-01 Sharp K.K. Anzeigevorrichtung mit aktiver Matrix , Verfahren zu ihrer Herstellung und Verfahren zur Behandlung defekter Pixel
JP3109674B2 (ja) * 1990-06-08 2000-11-20 セイコーエプソン株式会社 液晶表示装置
KR950002874B1 (ko) * 1990-06-25 1995-03-27 마쯔시다덴시고오교오 가부시기가이샤 광 또는 방사선감응성 조성물과 패턴형성방법과 포토마스크의 제조방법 및 반도체
JP2616160B2 (ja) * 1990-06-25 1997-06-04 日本電気株式会社 薄膜電界効果型トランジスタ素子アレイ
JP3053848B2 (ja) * 1990-07-09 2000-06-19 シャープ株式会社 アクティブマトリクス基板
JPH0474714A (ja) * 1990-07-09 1992-03-10 Seiko Epson Corp Ｔｉ系超伝導材料
JP2814752B2 (ja) * 1991-01-21 1998-10-27 松下電器産業株式会社 液晶表示装置およびそれを用いた投写型表示装置
US5661579A (en) * 1991-02-25 1997-08-26 Seiko Epson Corporation Manufacturing method for liquid crystal display having matched liquid crystal and MIM element capacitances for enhancing contrast ratio
JP2998255B2 (ja) * 1991-04-04 2000-01-11 セイコーエプソン株式会社 薄膜トランジスタ装置及びその製造方法
JPH0588199A (ja) * 1991-09-27 1993-04-09 Sanyo Electric Co Ltd 液晶表示装置
JPH05142570A (ja) * 1991-11-20 1993-06-11 Sharp Corp アクテイブマトリクス基板
US5594571A (en) * 1991-12-10 1997-01-14 Canon Kabushiki Kaisha Ferroelectric liquid crystal device and process for production thereof
JPH05249478A (ja) * 1991-12-25 1993-09-28 Toshiba Corp 液晶表示装置
JP3094619B2 (ja) * 1992-01-31 2000-10-03 セイコーエプソン株式会社 アクティブマトリクス型表示装置
US5459595A (en) * 1992-02-07 1995-10-17 Sharp Kabushiki Kaisha Active matrix liquid crystal display
US5526014A (en) * 1992-02-26 1996-06-11 Nec Corporation Semiconductor device for driving liquid crystal display panel
JP2800956B2 (ja) * 1992-03-10 1998-09-21 シャープ株式会社 アクティブマトリクス基板
US5402141A (en) * 1992-03-11 1995-03-28 Honeywell Inc. Multigap liquid crystal color display with reduced image retention and flicker
JPH05273595A (ja) * 1992-03-27 1993-10-22 Seiko Epson Corp 電気光学装置
JP2672055B2 (ja) * 1992-05-08 1997-11-05 信幸 山村 液晶表示素子とその製造方法及びこれを使用する表示装置
JP3127619B2 (ja) * 1992-10-21 2001-01-29 セイコーエプソン株式会社 アクティブマトリクス基板
JPH06160877A (ja) * 1992-11-25 1994-06-07 Hitachi Ltd 薄膜配線構造及びそれを用いた液晶表示装置
JPH06186580A (ja) * 1992-12-17 1994-07-08 Seiko Epson Corp 液晶表示装置
JPH0720496A (ja) * 1993-06-30 1995-01-24 Sony Corp アクティブマトリクス型液晶表示装置
EP0603866B1 (de) * 1992-12-25 2002-07-24 Sony Corporation Substrat mit aktiver Matrix
JP3098345B2 (ja) * 1992-12-28 2000-10-16 富士通株式会社 薄膜トランジスタマトリクス装置及びその製造方法
JP3239504B2 (ja) * 1993-01-13 2001-12-17 富士通株式会社 薄膜トランジスタマトリクスの製造方法
JPH06230422A (ja) 1993-02-03 1994-08-19 Fujitsu Ltd 液晶パネル
JPH06242467A (ja) * 1993-02-17 1994-09-02 Sanyo Electric Co Ltd 液晶表示装置及びその製造方法
JP3517890B2 (ja) * 1993-02-18 2004-04-12 日産化学工業株式会社 液晶表示素子用絶縁膜形成用塗布液
JP3410754B2 (ja) * 1993-03-01 2003-05-26 セイコーエプソン株式会社 液晶表示装置
JP3529153B2 (ja) * 1993-03-04 2004-05-24 三星電子株式会社 液晶表示装置及びその製造方法
JP2812851B2 (ja) * 1993-03-24 1998-10-22 シャープ株式会社 反射型液晶表示装置
JPH06313899A (ja) * 1993-04-30 1994-11-08 Sharp Corp 液晶表示装置
JP2621760B2 (ja) * 1993-06-10 1997-06-18 東レ株式会社 コーティング用組成物
CA2099067C (en) * 1993-06-23 2001-02-13 Makoto Oe Plane light source unit
JPH0784284A (ja) * 1993-06-30 1995-03-31 Toshiba Corp 液晶表示装置
JP3091603B2 (ja) * 1993-07-23 2000-09-25 シャープ株式会社 液晶表示装置
JP3644980B2 (ja) * 1993-09-06 2005-05-11 株式会社ルネサステクノロジ 半導体装置の製造方法
KR960016231B1 (en) * 1993-09-15 1996-12-07 Hyundai Electronics Ind Semiconductor metal wire forming method
KR100367869B1 (ko) * 1993-09-20 2003-06-09 가부시끼가이샤 히다치 세이사꾸쇼 액정표시장치
KR100305333B1 (ko) * 1993-10-28 2001-11-22 마티네즈 길러모 감광성수지조성물및이를사용한패턴의형성방법
JP3214202B2 (ja) * 1993-11-24 2001-10-02 ソニー株式会社 表示素子基板用半導体装置
US5688366A (en) * 1994-04-28 1997-11-18 Canon Kabushiki Kaisha Etching method, method of producing a semiconductor device, and etchant therefor
US5682211A (en) * 1994-04-28 1997-10-28 Xerox Corporation Integrated dark matrix for an active matrix liquid crystal display with pixel electrodes overlapping gate data lines
JPH086278A (ja) * 1994-06-22 1996-01-12 Konica Corp 画像形成方法
JPH0824019A (ja) * 1994-07-18 1996-01-30 Ykk Kk 装身具
KR100218584B1 (ko) * 1994-09-21 1999-09-01 모리시타 요이찌 액정표시장치 및 그구동방법
JPH08186099A (ja) * 1994-12-29 1996-07-16 Sharp Corp レジストのアッシング方法
JPH08264562A (ja) * 1995-03-24 1996-10-11 Mitsubishi Electric Corp 半導体装置，及びその製造方法
KR100303134B1 (ko) * 1995-05-09 2002-11-23 엘지.필립스 엘시디 주식회사 액정표시소자및그제조방법.
US5641974A (en) * 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
KR970011972A (ko) * 1995-08-11 1997-03-29 쯔지 하루오 투과형 액정 표시 장치 및 그 제조 방법
JPH0980416A (ja) * 1995-09-13 1997-03-28 Sharp Corp 液晶表示装置
JP3027541B2 (ja) * 1995-09-27 2000-04-04 シャープ株式会社 液晶表示装置
JP3299869B2 (ja) * 1995-09-27 2002-07-08 シャープ株式会社 液晶表示装置とその製造方法
JP3646999B2 (ja) * 1995-09-28 2005-05-11 シャープ株式会社 透過型液晶表示装置
JPH09236826A (ja) * 1995-09-28 1997-09-09 Sharp Corp 液晶表示素子およびその製造方法
JP3272212B2 (ja) * 1995-09-29 2002-04-08 シャープ株式会社 透過型液晶表示装置およびその製造方法
JPH09113931A (ja) * 1995-10-16 1997-05-02 Sharp Corp 液晶表示装置
JP3187306B2 (ja) * 1995-10-31 2001-07-11 シャープ株式会社 透過型液晶表示装置
JP3209317B2 (ja) * 1995-10-31 2001-09-17 シャープ株式会社 透過型液晶表示装置およびその製造方法
US5658697A (en) * 1996-04-17 1997-08-19 Industrial Technology Research, Institute Method for producing color filters by the use of anionic electrocoats
JP3312101B2 (ja) * 1996-07-02 2002-08-05 シャープ株式会社 液晶表示装置
US5679596A (en) * 1996-10-18 1997-10-21 Vanguard International Semiconductor Corporation Spot deposited polysilicon for the fabrication of high capacitance, DRAM devices

Also Published As

Publication number Publication date
KR970011972A (ko) 1997-03-29
US5953084A (en) 1999-09-14
CN1101555C (zh) 2003-02-12
EP1321797A3 (de) 2004-07-21
EP1321797A2 (de) 2003-06-25
JPH11119261A (ja) 1999-04-30
US6433851B2 (en) 2002-08-13
EP2090926A1 (de) 2009-08-19
CN1172962A (zh) 1998-02-11
EP0762184A1 (de) 1997-03-12
CN1278175C (zh) 2006-10-04
EP2149815A3 (de) 2011-08-17
US6097452A (en) 2000-08-01
US6195138B1 (en) 2001-02-27
US20010002857A1 (en) 2001-06-07
JP3247870B2 (ja) 2002-01-21
US6052162A (en) 2000-04-18
EP0762184B1 (de) 2003-01-29
DE69625969D1 (de) 2003-03-06
KR100335158B1 (ko) 2002-05-03
CN1515942A (zh) 2004-07-28
EP2149815A2 (de) 2010-02-03
KR100354630B1 (ko) 2002-10-04

Similar Documents

Publication Publication Date Title
DE69625969T2 (de) Transmissive Flüssigkristall-Anzeigevorrichtung und Herstellungsverfahren
DE69427671T2 (de) Flüssigkristallanzeigevorrichtung und ihr Herstellungsverfahren
DE69429407T2 (de) Flüssigkristall-Anzeigevorrichtung und ihr Herstellungsverfahren
DE69628715D1 (de) Flüssigkristallanzeigeelement und dessen Herstellungsverfahren
DE69419074D1 (de) Flüssigkristallanzeigegerät und Steuerverfahren dafür
DE69931672D1 (de) Flüssigkristall-Anzeigevorrichtung und Herstellungsverfahren
DE69826412D1 (de) Flüssigkristallanzeigevorrichtung und deren Herstellungsverfahren
DE69806573D1 (de) Flüssigkristallanzeigevorrichtung und ansteuerverfahren dafür
DE69614210T2 (de) Flüssigkristallanzeigevorrichtung
DE69432654D1 (de) Flüssigkristall-Anzeige und -vorrichtung
EP0724183A3 (de) Flussigkristall-Anzeige und Verfahren zu ihrer Herstellung
DE69425996D1 (de) Flüssigkristallanzeigevorrichtung und ihr Herstellungsverfahren
GB2307326B (en) Liquid crystal display device and method of fabricating the same
DE69708206D1 (de) Flüssigkristallanzeigevorrichtung und deren Herstellungsverfahren
DE69431337D1 (de) Flüssigkristall-Projektionsvorrichtung und Flüssigkristall-Anzeigevorrichtung
DE69633546D1 (de) Flüssigkristallanzeigevorrichtung und verzögerungsfilm
DE69530425D1 (de) Flüssigkristallanzeige und herstellungsverfahren dafür
KR970002415A (ko) 반도체 장치의 제조 방법 및 액정표시장치의 제조 방법
DE69636243D1 (de) Flüssigkristallanzeigeelement und sein Herstellungsverfahren
DE69610800D1 (de) Flüssigkristallvorrichtung und Flüssigkristallapparat
GB2288672B (en) Liquid crystal display device and its fabricating method
DE69708564T2 (de) Flüssigkristallanzeigeeinheit und deren Herstellungsverfahren
KR960015040A (ko) 액정 디스플레이 소자 및 그 제조 방법
DE69635866D1 (de) Flüssigkristallanzeigevorrichtung
DE69611590D1 (de) Flüssigkristallvorrichtung und Flüssigkristallapparat

Legal Events

Date Code Title Description
8364 No opposition during term of opposition