DE69621517T2 - Integrierte monolithische Mikrowellenschaltung und Verfahren - Google Patents

Integrierte monolithische Mikrowellenschaltung und Verfahren

Info

Publication number
DE69621517T2
DE69621517T2 DE69621517T DE69621517T DE69621517T2 DE 69621517 T2 DE69621517 T2 DE 69621517T2 DE 69621517 T DE69621517 T DE 69621517T DE 69621517 T DE69621517 T DE 69621517T DE 69621517 T2 DE69621517 T2 DE 69621517T2
Authority
DE
Germany
Prior art keywords
microwave circuit
monolithic microwave
integrated monolithic
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69621517T
Other languages
English (en)
Other versions
DE69621517D1 (de
Inventor
Perry A Mcdonald
Lawrence E Larson
Michael G Case
Mehran Matloubian
Mary Y Chen
David B Rensch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DirecTV Group Inc
Original Assignee
Hughes Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Electronics Corp filed Critical Hughes Electronics Corp
Publication of DE69621517D1 publication Critical patent/DE69621517D1/de
Application granted granted Critical
Publication of DE69621517T2 publication Critical patent/DE69621517T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
DE69621517T 1995-04-27 1996-04-25 Integrierte monolithische Mikrowellenschaltung und Verfahren Expired - Lifetime DE69621517T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/430,067 US5528209A (en) 1995-04-27 1995-04-27 Monolithic microwave integrated circuit and method

Publications (2)

Publication Number Publication Date
DE69621517D1 DE69621517D1 (de) 2002-07-11
DE69621517T2 true DE69621517T2 (de) 2002-09-26

Family

ID=23705930

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621517T Expired - Lifetime DE69621517T2 (de) 1995-04-27 1996-04-25 Integrierte monolithische Mikrowellenschaltung und Verfahren

Country Status (4)

Country Link
US (1) US5528209A (de)
EP (1) EP0741414B1 (de)
JP (1) JPH0917959A (de)
DE (1) DE69621517T2 (de)

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US5886597A (en) * 1997-03-28 1999-03-23 Virginia Tech Intellectual Properties, Inc. Circuit structure including RF/wideband resonant vias
US5945734A (en) * 1997-09-19 1999-08-31 Samsung Electronics Co., Ltd. Wire-bond free input/output interface for GaAs ICs with means of determining known good die
US6359672B2 (en) 1997-10-20 2002-03-19 Guardian Industries Corp. Method of making an LCD or X-ray imaging device with first and second insulating layers
US6011274A (en) * 1997-10-20 2000-01-04 Ois Optical Imaging Systems, Inc. X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween
FR2793008B1 (fr) * 1999-04-30 2001-07-27 Valeurs Bois Ind Procede d'extraction de jus naturel de matieres vegetales ligneuses, dispositif permettant la mise en oeuvre du procede et utilisation du procede pour la production de vegetaux ligneux seches
EP0940848A3 (de) * 1998-03-05 2000-03-22 Interuniversitair Micro-Elektronica Centrum Vzw Verlustarme Leiterbahn und Verfahren zu ihrer Herstellung
US6259148B1 (en) 1998-08-13 2001-07-10 International Business Machines Corporation Modular high frequency integrated circuit structure
US6222246B1 (en) * 1999-01-08 2001-04-24 Intel Corporation Flip-chip having an on-chip decoupling capacitor
US6693033B2 (en) * 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US20020008234A1 (en) * 2000-06-28 2002-01-24 Motorola, Inc. Mixed-signal semiconductor structure, device including the structure, and methods of forming the device and the structure
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
KR20020070739A (ko) * 2001-03-03 2002-09-11 삼성전자 주식회사 단일 칩 고주파 집적회로 및 그 제조 방법
TW546819B (en) * 2001-05-30 2003-08-11 Sharp Kk Semiconductor device, manufacturing method thereof, and monolithic microwave integrated circuit
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US7019332B2 (en) * 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6639249B2 (en) * 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030026310A1 (en) * 2001-08-06 2003-02-06 Motorola, Inc. Structure and method for fabrication for a lighting device
US6673667B2 (en) * 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
JP3674780B2 (ja) * 2001-11-29 2005-07-20 ユーディナデバイス株式会社 高周波半導体装置
US7169619B2 (en) * 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6806202B2 (en) 2002-12-03 2004-10-19 Motorola, Inc. Method of removing silicon oxide from a surface of a substrate
US6963090B2 (en) * 2003-01-09 2005-11-08 Freescale Semiconductor, Inc. Enhancement mode metal-oxide-semiconductor field effect transistor
NL1027745C1 (nl) * 2004-12-14 2006-06-16 Bosma Beheersmij B V H O D N M Verliesarme, asymmetrische combinator voor faseverschil systemen en adaptieve RF-versterker omvattende een asymmetrische combinator.
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
EP2062290B1 (de) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defektreduzierung durch kontrolle des aspektverhältnisses
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
JP2010538495A (ja) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
JP5337041B2 (ja) * 2007-10-09 2013-11-06 パナソニック株式会社 回路装置
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
JP2010205941A (ja) 2009-03-03 2010-09-16 Panasonic Corp 半導体チップ及び半導体装置
EP2415083B1 (de) 2009-04-02 2017-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Aus einer nicht polaren ebene eines kristallinen materials geformte vorrichtungen und verfahren zu ihrer herstellung
US9912303B2 (en) * 2010-02-03 2018-03-06 Massachusetts Institute Of Technology RF-input / RF-output outphasing amplifier
FI130081B (en) * 2019-03-18 2023-01-31 Teknologian Tutkimuskeskus Vtt Oy Wilkinson divider

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US4967201A (en) * 1987-10-22 1990-10-30 Westinghouse Electric Corp. Multi-layer single substrate microwave transmit/receive module
US5040047A (en) * 1989-12-26 1991-08-13 General Electric Company Enhanced fluorescence polymers and interconnect structures using them
US5202752A (en) * 1990-05-16 1993-04-13 Nec Corporation Monolithic integrated circuit device
JPH06125208A (ja) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp マイクロ波集積回路およびその製造方法
JPH0758526A (ja) * 1993-08-10 1995-03-03 Nippon Telegr & Teleph Corp <Ntt> 集積回路
US5521406A (en) * 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance

Also Published As

Publication number Publication date
EP0741414A2 (de) 1996-11-06
EP0741414B1 (de) 2002-06-05
US5528209A (en) 1996-06-18
DE69621517D1 (de) 2002-07-11
JPH0917959A (ja) 1997-01-17
EP0741414A3 (de) 1998-10-21

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