DE69620899T2 - Siliziumnitrid-nanowhiskers und verfahren zur herstellung derselben - Google Patents

Siliziumnitrid-nanowhiskers und verfahren zur herstellung derselben

Info

Publication number
DE69620899T2
DE69620899T2 DE69620899T DE69620899T DE69620899T2 DE 69620899 T2 DE69620899 T2 DE 69620899T2 DE 69620899 T DE69620899 T DE 69620899T DE 69620899 T DE69620899 T DE 69620899T DE 69620899 T2 DE69620899 T2 DE 69620899T2
Authority
DE
Germany
Prior art keywords
silicon nitride
nanowhiskers
producing
same
nitride nanowhiskers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69620899T
Other languages
English (en)
Other versions
DE69620899D1 (de
Inventor
Ming Niu
David Moy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hyperion Catalysis International Inc
Original Assignee
Hyperion Catalysis International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyperion Catalysis International Inc filed Critical Hyperion Catalysis International Inc
Application granted granted Critical
Publication of DE69620899D1 publication Critical patent/DE69620899D1/de
Publication of DE69620899T2 publication Critical patent/DE69620899T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/895—Manufacture, treatment, or detection of nanostructure having step or means utilizing chemical property
DE69620899T 1995-07-24 1996-07-24 Siliziumnitrid-nanowhiskers und verfahren zur herstellung derselben Expired - Fee Related DE69620899T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/506,250 US5814290A (en) 1995-07-24 1995-07-24 Silicon nitride nanowhiskers and method of making same
PCT/US1996/012372 WO1997003935A1 (en) 1995-07-24 1996-07-24 Silicon nitride nanowhiskers and method of making same

Publications (2)

Publication Number Publication Date
DE69620899D1 DE69620899D1 (de) 2002-05-29
DE69620899T2 true DE69620899T2 (de) 2002-11-07

Family

ID=24013825

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69620899T Expired - Fee Related DE69620899T2 (de) 1995-07-24 1996-07-24 Siliziumnitrid-nanowhiskers und verfahren zur herstellung derselben

Country Status (7)

Country Link
US (1) US5814290A (de)
EP (1) EP0852575B1 (de)
JP (1) JPH11509825A (de)
AT (1) ATE216680T1 (de)
CA (1) CA2227615C (de)
DE (1) DE69620899T2 (de)
WO (1) WO1997003935A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833980B1 (en) * 1999-05-10 2004-12-21 Hitachi, Ltd. Magnetoelectric device
US6333016B1 (en) * 1999-06-02 2001-12-25 The Board Of Regents Of The University Of Oklahoma Method of producing carbon nanotubes
US20030091496A1 (en) * 2001-07-23 2003-05-15 Resasco Daniel E. Method and catalyst for producing single walled carbon nanotubes
US7816709B2 (en) * 1999-06-02 2010-10-19 The Board Of Regents Of The University Of Oklahoma Single-walled carbon nanotube-ceramic composites and methods of use
US7132161B2 (en) * 1999-06-14 2006-11-07 Energy Science Laboratories, Inc. Fiber adhesive material
US20040009353A1 (en) * 1999-06-14 2004-01-15 Knowles Timothy R. PCM/aligned fiber composite thermal interface
US6913075B1 (en) 1999-06-14 2005-07-05 Energy Science Laboratories, Inc. Dendritic fiber material
US6919064B2 (en) * 2000-06-02 2005-07-19 The Board Of Regents Of The University Of Oklahoma Process and apparatus for producing single-walled carbon nanotubes
US6413487B1 (en) * 2000-06-02 2002-07-02 The Board Of Regents Of The University Of Oklahoma Method and apparatus for producing carbon nanotubes
US6740403B2 (en) 2001-04-02 2004-05-25 Toyo Tanso Co., Ltd. Graphitic polyhederal crystals in the form of nanotubes, whiskers and nanorods, methods for their production and uses thereof
US7829622B2 (en) * 2002-06-19 2010-11-09 The Board Of Regents Of The University Of Oklahoma Methods of making polymer composites containing single-walled carbon nanotubes
US7153903B1 (en) 2002-06-19 2006-12-26 The Board Of Regents Of The University Of Oklahoma Carbon nanotube-filled composites prepared by in-situ polymerization
KR100481736B1 (ko) * 2002-07-10 2005-04-08 주식회사 동운인터내셔널 콜로이드 실리카 템플레이트를 이용한 수 나노미터에서수십 나노 미터크기의 탄소나노캡슐의 제조방법
US6605535B1 (en) 2002-09-26 2003-08-12 Promos Technologies, Inc Method of filling trenches using vapor-liquid-solid mechanism
CA2549428A1 (en) * 2003-12-15 2005-07-21 Daniel E. Resasco Rhenium catalysts and methods for production of single-walled carbon nanotubes
MXPA06006805A (es) * 2004-01-09 2006-12-19 Olga Matarredona Pastas de nanotubo de carbono y metodos de uso.
JP4581121B2 (ja) * 2004-05-27 2010-11-17 独立行政法人物質・材料研究機構 窒化ホウ素ナノシートで被覆された窒化珪素ナノワイヤー及びその製造方法
US20060083927A1 (en) * 2004-10-15 2006-04-20 Zyvex Corporation Thermal interface incorporating nanotubes
WO2007055744A2 (en) 2005-06-28 2007-05-18 The Board Of Regents Of The University Of Oklahoma Methods for growing and harvesting carbon nanotubes
KR100753114B1 (ko) 2005-07-26 2007-08-29 한국원자력연구원 실리카 분말의 열적 반응을 이용한 실리콘계 세라믹나노와이어의 제조방법
CN100415641C (zh) * 2005-12-21 2008-09-03 北京科技大学 一种层状布料燃烧合成均质氮化硅粉体的方法
CN112607715B (zh) * 2020-12-29 2021-12-10 哈尔滨工业大学 一种高纯α相氮化硅纳米线的制备方法
CN112624767B (zh) * 2020-12-29 2021-11-12 黑龙江冠瓷科技有限公司 一种碳化硅/氮化硅复合纤维毡的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1121293A (en) * 1963-10-28 1968-07-24 Mini Of Technology Improvements in the manufacture of silicon nitride
US3413090A (en) * 1965-03-19 1968-11-26 Mallory & Co Inc P R Preparation of silicon nitride whiskers
SE449221B (sv) * 1983-04-19 1987-04-13 Kemanord Ind Ab Forfarande for framstellning av kiselnitrid genom omsettning av kiseldioxid, kol och kveve vid en temperatur over 1300?59oc
JPS60221398A (ja) * 1984-04-18 1985-11-06 Toshiba Ceramics Co Ltd キラを原料とするβ型窒化けい素ウイスカ−の製造方法
US5171560A (en) * 1984-12-06 1992-12-15 Hyperion Catalysis International Carbon fibrils, method for producing same, and encapsulated catalyst
US4663230A (en) * 1984-12-06 1987-05-05 Hyperion Catalysis International, Inc. Carbon fibrils, method for producing same and compositions containing same
JPS61295298A (ja) * 1985-06-21 1986-12-26 Nippon Carbon Co Ltd 窒化ケイ素の製造方法
JPS6365000A (ja) * 1986-09-05 1988-03-23 Ube Ind Ltd β型窒化珪素ウイスカ−の製法
JPH01278405A (ja) * 1988-05-02 1989-11-08 Toshiba Ceramics Co Ltd 針状晶窒化ケイ素の製造方法
JP2639687B2 (ja) * 1988-05-02 1997-08-13 東芝セラミックス株式会社 針状晶窒化ケイ素の製造方法

Also Published As

Publication number Publication date
WO1997003935A1 (en) 1997-02-06
CA2227615A1 (en) 1997-02-06
CA2227615C (en) 2009-07-14
JPH11509825A (ja) 1999-08-31
EP0852575B1 (de) 2002-04-24
EP0852575A1 (de) 1998-07-15
US5814290A (en) 1998-09-29
ATE216680T1 (de) 2002-05-15
EP0852575A4 (de) 1998-11-11
DE69620899D1 (de) 2002-05-29

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee