DE69618697D1 - Dünnfilmtransistor und Flüssigkristallanzeige, die diesen verwendet - Google Patents

Dünnfilmtransistor und Flüssigkristallanzeige, die diesen verwendet

Info

Publication number
DE69618697D1
DE69618697D1 DE69618697T DE69618697T DE69618697D1 DE 69618697 D1 DE69618697 D1 DE 69618697D1 DE 69618697 T DE69618697 T DE 69618697T DE 69618697 T DE69618697 T DE 69618697T DE 69618697 D1 DE69618697 D1 DE 69618697D1
Authority
DE
Germany
Prior art keywords
liquid crystal
thin film
same
crystal display
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69618697T
Other languages
English (en)
Inventor
Shunsuke Inoue
Takeshi Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69618697D1 publication Critical patent/DE69618697D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si
DE69618697T 1995-04-10 1996-04-10 Dünnfilmtransistor und Flüssigkristallanzeige, die diesen verwendet Expired - Lifetime DE69618697D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8410695 1995-04-10
JP8148596A JP3292657B2 (ja) 1995-04-10 1996-04-03 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法

Publications (1)

Publication Number Publication Date
DE69618697D1 true DE69618697D1 (de) 2002-03-14

Family

ID=26422509

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69618697T Expired - Lifetime DE69618697D1 (de) 1995-04-10 1996-04-10 Dünnfilmtransistor und Flüssigkristallanzeige, die diesen verwendet

Country Status (5)

Country Link
US (1) US5693959A (de)
EP (1) EP0738012B1 (de)
JP (1) JP3292657B2 (de)
KR (1) KR100261983B1 (de)
DE (1) DE69618697D1 (de)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
TW374196B (en) * 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
JPH09281508A (ja) * 1996-04-12 1997-10-31 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその作製方法
US6288764B1 (en) * 1996-06-25 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device or electronic device having liquid crystal display panel
KR100219117B1 (ko) * 1996-08-24 1999-09-01 구자홍 박막트랜지스터 액정표시장치 및 그 제조방법
JP3795606B2 (ja) * 1996-12-30 2006-07-12 株式会社半導体エネルギー研究所 回路およびそれを用いた液晶表示装置
JPH10198292A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100248200B1 (ko) * 1996-12-30 2000-03-15 김영환 Soi 반도체 소자 및 그의 제조방법
US6088070A (en) * 1997-01-17 2000-07-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode
JP3274081B2 (ja) * 1997-04-08 2002-04-15 松下電器産業株式会社 薄膜トランジスタの製造方法および液晶表示装置の製造方法
KR100248119B1 (ko) * 1997-05-01 2000-03-15 구자홍 박막트랜지스터 및 그 제조방법
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP3934236B2 (ja) * 1998-01-14 2007-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7202497B2 (en) 1997-11-27 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4014710B2 (ja) 1997-11-28 2007-11-28 株式会社半導体エネルギー研究所 液晶表示装置
US5811855A (en) * 1997-12-29 1998-09-22 United Technologies Corporation SOI combination body tie
US6288413B1 (en) * 1998-04-03 2001-09-11 Kabushiki Kaisha Toshiba Thin film transistor and method for producing same
US6060749A (en) * 1998-04-23 2000-05-09 Texas Instruments - Acer Incorporated Ultra-short channel elevated S/D MOSFETS formed on an ultra-thin SOI substrate
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6617644B1 (en) 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7141821B1 (en) * 1998-11-10 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity gradient in the impurity regions and method of manufacture
US6518594B1 (en) 1998-11-16 2003-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6277679B1 (en) 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6501098B2 (en) * 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
TW404070B (en) * 1999-02-02 2000-09-01 Nat Science Council Poly-silicon thin film transistor process
US6576926B1 (en) * 1999-02-23 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
EP1041641B1 (de) 1999-03-26 2015-11-04 Semiconductor Energy Laboratory Co., Ltd. Verfahren zur Herstellung einer elektrooptischen Vorrichtung
US6346730B1 (en) * 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
TW480554B (en) 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US6967633B1 (en) 1999-10-08 2005-11-22 Semiconductor Energy Laboratory Co., Ltd. Display device
US6384427B1 (en) * 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP4727029B2 (ja) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 Ｅｌ表示装置、電気器具及びｅｌ表示装置用の半導体素子基板
GB2358083B (en) 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor and its manufacturing method
GB2358082B (en) * 2000-01-07 2003-11-12 Seiko Epson Corp Semiconductor transistor
US6515310B2 (en) * 2000-05-06 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric apparatus
TW538246B (en) * 2000-06-05 2003-06-21 Semiconductor Energy Lab Display panel, display panel inspection method, and display panel manufacturing method
JP3522216B2 (ja) * 2000-12-19 2004-04-26 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに液晶表示装置
SG138468A1 (en) 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
JP2002334994A (ja) * 2001-03-07 2002-11-22 Seiko Epson Corp 電気光学装置および電気光学装置の製造方法、電気光学装置用基板、投射型表示装置並びに電子機器
KR100532082B1 (ko) * 2001-12-28 2005-11-30 엘지.필립스 엘시디 주식회사 다결정 박막트랜지스터 및 그 제조방법
JP3904512B2 (ja) * 2002-12-24 2007-04-11 シャープ株式会社 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器
US6960794B2 (en) * 2002-12-31 2005-11-01 Matrix Semiconductor, Inc. Formation of thin channels for TFT devices to ensure low variability of threshold voltages
US6713371B1 (en) * 2003-03-17 2004-03-30 Matrix Semiconductor, Inc. Large grain size polysilicon films formed by nuclei-induced solid phase crystallization
TWI231996B (en) * 2003-03-28 2005-05-01 Au Optronics Corp Dual gate layout for thin film transistor
KR100849292B1 (ko) * 2003-03-31 2008-07-29 샤프 가부시키가이샤 액정 표시 장치 및 그 제조 방법
US7323731B2 (en) 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
JP2005223027A (ja) * 2004-02-04 2005-08-18 Sony Corp 表示装置およびその製造方法
US7737519B2 (en) * 2004-05-06 2010-06-15 Canon Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof
WO2005124306A1 (en) * 2004-06-15 2005-12-29 Canon Kabushiki Kaisha Semiconductor device
KR100793278B1 (ko) * 2005-02-25 2008-01-10 재단법인서울대학교산학협력재단 다결정 실리콘 박막트랜지스터의 제조 방법
KR100763913B1 (ko) * 2006-04-27 2007-10-05 삼성전자주식회사 박막 트랜지스터의 제조방법
EP1850374A3 (de) * 2006-04-28 2007-11-21 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und zugehöriges Herstellungsverfahren
US7863612B2 (en) 2006-07-21 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
JP4332545B2 (ja) * 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
US7659579B2 (en) 2006-10-06 2010-02-09 International Business Machines Corporation FETS with self-aligned bodies and backgate holes
KR100848338B1 (ko) 2007-01-09 2008-07-25 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는평판표시장치
DE102008000128B4 (de) * 2007-01-30 2013-01-03 Denso Corporation Halbleitersensorvorrichtung und deren Herstellungsverfahren
US8119463B2 (en) * 2008-12-05 2012-02-21 Electronics And Telecommunications Research Institute Method of manufacturing thin film transistor and thin film transistor substrate
JP2010206173A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP2010206172A (ja) 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ
JP5451098B2 (ja) * 2009-02-06 2014-03-26 キヤノン株式会社 半導体装置の製造方法
JP2010206174A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
KR101117739B1 (ko) * 2010-03-15 2012-02-24 삼성모바일디스플레이주식회사 박막 트랜지스터 및 그 제조방법
JP2011002855A (ja) * 2010-09-22 2011-01-06 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP2011158923A (ja) * 2011-05-11 2011-08-18 Semiconductor Energy Lab Co Ltd 表示装置
JP2015161701A (ja) * 2014-02-26 2015-09-07 国立大学法人 琉球大学 ディスプレイ
CN104779171A (zh) * 2015-05-05 2015-07-15 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置
CN105070764A (zh) * 2015-08-31 2015-11-18 深圳市华星光电技术有限公司 Tft、阵列基板、显示装置及tft的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2737406A1 (de) * 1977-08-19 1979-02-22 Bayer Ag Strahlenhaertbare bindemittel
JPH0828507B2 (ja) * 1982-03-16 1996-03-21 セイコーエプソン株式会社 半導体装置
US5242844A (en) * 1983-12-23 1993-09-07 Sony Corporation Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
JPH0669094B2 (ja) * 1983-12-23 1994-08-31 ソニー株式会社 電界効果型トランジスタ
DE3751219T2 (de) * 1986-11-20 1995-08-03 Sumitomo Electric Industries Verfahren zur Herstellung eines Schottky-Barriere- Feldeffekttransistors.
JPH0338755A (ja) * 1989-07-05 1991-02-19 Nec Corp ファイル転送システム
JPH03220774A (ja) * 1990-01-25 1991-09-27 Sanyo Electric Co Ltd Ｍｏｓ電界効果トランジスタ
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法
JPH04241466A (ja) * 1991-01-16 1992-08-28 Casio Comput Co Ltd 電界効果型トランジスタ
US5466961A (en) * 1991-04-23 1995-11-14 Canon Kabushiki Kaisha Semiconductor device and method of manufacturing the same
JP2731056B2 (ja) * 1991-10-09 1998-03-25 シャープ株式会社 薄膜トランジスタの製造方法
JPH05259457A (ja) * 1992-03-16 1993-10-08 Sharp Corp 薄膜トランジスタ
JPH05267327A (ja) * 1992-03-18 1993-10-15 Fujitsu Ltd Ｍｉｓｆｅｔ及びその製造方法
EP0602250B1 (de) * 1992-06-24 1999-08-25 Seiko Epson Corporation Dünnfilmtransistor und verfahren zur herstellung eines dünnfilmtransistors
US5412493A (en) * 1992-09-25 1995-05-02 Sony Corporation Liquid crystal display device having LDD structure type thin film transistors connected in series
US5563427A (en) * 1993-02-10 1996-10-08 Seiko Epson Corporation Active matrix panel and manufacturing method including TFTs having variable impurity concentration levels

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JP3292657B2 (ja) 2002-06-17
JPH08340120A (ja) 1996-12-24
EP0738012B1 (de) 2002-01-23
KR100261983B1 (ko) 2000-07-15
KR960039436A (ko) 1996-11-25
EP0738012A2 (de) 1996-10-16
EP0738012A3 (de) 1997-08-13
US5693959A (en) 1997-12-02

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