DE69607450T2 - Verfahren und Vorrichtung zur Behandlung von Laserfacetten - Google Patents

Verfahren und Vorrichtung zur Behandlung von Laserfacetten

Info

Publication number
DE69607450T2
DE69607450T2 DE69607450T DE69607450T DE69607450T2 DE 69607450 T2 DE69607450 T2 DE 69607450T2 DE 69607450 T DE69607450 T DE 69607450T DE 69607450 T DE69607450 T DE 69607450T DE 69607450 T2 DE69607450 T2 DE 69607450T2
Authority
DE
Germany
Prior art keywords
laser facets
treating laser
treating
facets
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69607450T
Other languages
English (en)
Other versions
DE69607450D1 (de
Inventor
Christian Belouet
Dominique Boccon-Gibod
Sylvaine Kerboeuf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
Alcatel SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA filed Critical Alcatel SA
Application granted granted Critical
Publication of DE69607450D1 publication Critical patent/DE69607450D1/de
Publication of DE69607450T2 publication Critical patent/DE69607450T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
DE69607450T 1995-12-22 1996-12-19 Verfahren und Vorrichtung zur Behandlung von Laserfacetten Expired - Fee Related DE69607450T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9515397A FR2742926B1 (fr) 1995-12-22 1995-12-22 Procede et dispositif de preparation de faces de laser

Publications (2)

Publication Number Publication Date
DE69607450D1 DE69607450D1 (de) 2000-05-04
DE69607450T2 true DE69607450T2 (de) 2000-10-19

Family

ID=9485884

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69607450T Expired - Fee Related DE69607450T2 (de) 1995-12-22 1996-12-19 Verfahren und Vorrichtung zur Behandlung von Laserfacetten

Country Status (5)

Country Link
US (1) US5780120A (de)
EP (1) EP0783191B1 (de)
JP (1) JPH09199809A (de)
DE (1) DE69607450T2 (de)
FR (1) FR2742926B1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
EP0898345A3 (de) 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
CN1135839C (zh) * 1997-12-22 2004-01-21 皇家菲利浦电子有限公司 输出时基校正器、校正方法及具有该校正器的显示设备
DE19802298C2 (de) * 1998-01-22 2000-11-23 Daimler Chrysler Ag Verfahren zur Erzielung funktioneller Metall-, Keramik- oder Keramik/Metall-Schichten auf der Innenwand von Hohlkörpern
JP3814432B2 (ja) * 1998-12-04 2006-08-30 三菱化学株式会社 化合物半導体発光素子
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (de) 1999-03-04 2009-12-16 Nichia Corporation Nitridhalbleiterlaserelement
US7112545B1 (en) * 1999-09-10 2006-09-26 The Board Of Trustees Of The University Of Arkansas Passivation of material using ultra-fast pulsed laser
US6744796B1 (en) 2000-03-30 2004-06-01 Triquint Technology Holding Co. Passivated optical device and method of forming the same
CN1206782C (zh) * 2000-08-22 2005-06-15 三井化学株式会社 半导体激光装置的制造方法
US6812152B2 (en) * 2001-08-09 2004-11-02 Comlase Ab Method to obtain contamination free laser mirrors and passivation of these
US6734111B2 (en) * 2001-08-09 2004-05-11 Comlase Ab Method to GaAs based lasers and a GaAs based laser
JP4006226B2 (ja) * 2001-11-26 2007-11-14 キヤノン株式会社 光学素子の製造方法、光学素子、露光装置及びデバイス製造方法及びデバイス
US7767272B2 (en) * 2007-05-25 2010-08-03 Imra America, Inc. Method of producing compound nanorods and thin films
DE102007062050B4 (de) 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
DE102009054912A1 (de) 2009-08-28 2011-03-10 M2K-Laser Gmbh Hochleistungs-Diodenlaser und Verfahren zum Herstellen eines Hochleistungs-Diodenlasers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994892A (ja) * 1982-11-22 1984-05-31 Sanyo Electric Co Ltd 半導体レ−ザ
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
DE68915763T2 (de) * 1989-09-07 1994-12-08 Ibm Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.
JPH05311429A (ja) * 1991-09-13 1993-11-22 Nec Corp 薄膜形成装置
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置

Also Published As

Publication number Publication date
US5780120A (en) 1998-07-14
EP0783191A1 (de) 1997-07-09
FR2742926A1 (fr) 1997-06-27
DE69607450D1 (de) 2000-05-04
EP0783191B1 (de) 2000-03-29
FR2742926B1 (fr) 1998-02-06
JPH09199809A (ja) 1997-07-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP., FREMONT, CALIF., US

8339 Ceased/non-payment of the annual fee