DE69605956T2 - Oberflächenbehandlungsverfahren für Siliziumsubstraten - Google Patents
Oberflächenbehandlungsverfahren für SiliziumsubstratenInfo
- Publication number
- DE69605956T2 DE69605956T2 DE69605956T DE69605956T DE69605956T2 DE 69605956 T2 DE69605956 T2 DE 69605956T2 DE 69605956 T DE69605956 T DE 69605956T DE 69605956 T DE69605956 T DE 69605956T DE 69605956 T2 DE69605956 T2 DE 69605956T2
- Authority
- DE
- Germany
- Prior art keywords
- surface treatment
- treatment process
- silicon substrates
- substrates
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05097695A JP3575859B2 (ja) | 1995-03-10 | 1995-03-10 | 半導体基板の表面処理方法及び表面処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69605956D1 DE69605956D1 (de) | 2000-02-10 |
DE69605956T2 true DE69605956T2 (de) | 2000-06-08 |
Family
ID=12873851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69605956T Expired - Fee Related DE69605956T2 (de) | 1995-03-10 | 1996-03-08 | Oberflächenbehandlungsverfahren für Siliziumsubstraten |
Country Status (6)
Country | Link |
---|---|
US (1) | US5868855A (de) |
EP (1) | EP0731498B1 (de) |
JP (1) | JP3575859B2 (de) |
KR (2) | KR960035859A (de) |
CN (1) | CN1076121C (de) |
DE (1) | DE69605956T2 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6127279A (en) * | 1994-09-26 | 2000-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Solution applying method |
KR0170902B1 (ko) * | 1995-12-29 | 1999-03-30 | 김주용 | 반도체 소자의 제조방법 |
US6290777B1 (en) * | 1996-08-20 | 2001-09-18 | Organo Corp. | Method and device for washing electronic parts member, or the like |
US5882425A (en) * | 1997-01-23 | 1999-03-16 | Semitool, Inc. | Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching |
JPH10303171A (ja) * | 1997-04-28 | 1998-11-13 | Mitsubishi Electric Corp | 半導体ウェーハのウエット処理方法及びウエット処理装置 |
US6436723B1 (en) * | 1998-10-16 | 2002-08-20 | Kabushiki Kaisha Toshiba | Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device |
DE19853486A1 (de) * | 1998-11-19 | 2000-05-31 | Wacker Siltronic Halbleitermat | Verfahren zur naßchemischen Behandlung von Halbleiterscheiben |
US6511914B2 (en) * | 1999-01-22 | 2003-01-28 | Semitool, Inc. | Reactor for processing a workpiece using sonic energy |
FR2790768A1 (fr) * | 1999-03-08 | 2000-09-15 | Commissariat Energie Atomique | Procede d'attaque chimique du cuivre pour composants microelectroniques |
US6799583B2 (en) | 1999-05-13 | 2004-10-05 | Suraj Puri | Methods for cleaning microelectronic substrates using ultradilute cleaning liquids |
US6758938B1 (en) * | 1999-08-31 | 2004-07-06 | Micron Technology, Inc. | Delivery of dissolved ozone |
WO2001026144A1 (en) * | 1999-10-01 | 2001-04-12 | Fsi International, Inc. | Methods for cleaning microelectronic substrates using ultradilute cleaning liquids |
EP1091388A3 (de) | 1999-10-06 | 2005-09-21 | Ebara Corporation | Verfahren und Vorrichtung zur Reinigung von einem Substrat |
EP1727189A2 (de) * | 1999-12-27 | 2006-11-29 | Matsushita Electric Industrial Co., Ltd. | Herstellungsverfahren für ein Halbleiterbauelement |
US6638638B2 (en) * | 2001-09-18 | 2003-10-28 | Samsung Electronics Co., Ltd. | Hollow solder structure having improved reliability and method of manufacturing same |
US6802911B2 (en) | 2001-09-19 | 2004-10-12 | Samsung Electronics Co., Ltd. | Method for cleaning damaged layers and polymer residue from semiconductor device |
KR20030056224A (ko) * | 2001-12-27 | 2003-07-04 | 동부전자 주식회사 | 웨이퍼 표면의 세정방법 |
JP4076365B2 (ja) * | 2002-04-09 | 2008-04-16 | シャープ株式会社 | 半導体洗浄装置 |
US6848455B1 (en) | 2002-04-22 | 2005-02-01 | Novellus Systems, Inc. | Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species |
CN1326638C (zh) * | 2002-07-19 | 2007-07-18 | 上海华虹(集团)有限公司 | 一种去除硅化物形成过程中多余金属的方法 |
US7901870B1 (en) | 2004-05-12 | 2011-03-08 | Cirrex Systems Llc | Adjusting optical properties of optical thin films |
CN100349266C (zh) * | 2004-07-23 | 2007-11-14 | 王文 | 高效能臭氧水清洗半导体晶圆的系统及其方法 |
JP4859355B2 (ja) * | 2004-08-13 | 2012-01-25 | セイコーエプソン株式会社 | トレンチ素子分離構造の形成方法、半導体基板および半導体装置 |
JP2006066726A (ja) * | 2004-08-27 | 2006-03-09 | Toshiba Corp | 半導体装置の製造方法及び半導体基板 |
US7565084B1 (en) | 2004-09-15 | 2009-07-21 | Wach Michael L | Robustly stabilizing laser systems |
WO2006101458A1 (en) * | 2005-03-22 | 2006-09-28 | National University Of Singapore | Method for patterning ferrelectric/piezoelectric films |
US7451838B2 (en) * | 2005-08-03 | 2008-11-18 | Smith International, Inc. | High energy cutting elements and bits incorporating the same |
WO2007038263A2 (en) * | 2005-09-23 | 2007-04-05 | Applied Materials, Inc. | Ozonation for elimination of bacteria for wet processing systems |
KR100841994B1 (ko) * | 2006-12-20 | 2008-06-27 | 주식회사 실트론 | 실리콘 웨이퍼의 산화막 제조 방법 |
DE102007044787A1 (de) * | 2007-09-19 | 2009-04-02 | Siltronic Ag | Verfahren zum Reinigen einer Halbleiterscheibe |
KR100904452B1 (ko) * | 2007-12-06 | 2009-06-24 | 세메스 주식회사 | 오존수혼합액 공급장치 및 방법, 그리고 이를 구비하는기판 처리 설비 |
KR100904454B1 (ko) * | 2007-12-07 | 2009-06-24 | 세메스 주식회사 | 오존수를 사용하는 기판 처리 장치 |
JP5191880B2 (ja) * | 2008-12-26 | 2013-05-08 | 東京エレクトロン株式会社 | 処理装置、処理方法、コンピュータプログラムおよび記憶媒体 |
US8863763B1 (en) | 2009-05-27 | 2014-10-21 | WD Media, LLC | Sonication cleaning with a particle counter |
US8404056B1 (en) * | 2009-05-27 | 2013-03-26 | WD Media, LLC | Process control for a sonication cleaning tank |
RU2486287C2 (ru) * | 2011-04-29 | 2013-06-27 | Антон Викторович Мантузов | Способ очистки поверхности полупроводниковых пластин и регенерации травильных растворов |
US9005464B2 (en) | 2011-06-27 | 2015-04-14 | International Business Machines Corporation | Tool for manufacturing semiconductor structures and method of use |
CN102523695B (zh) * | 2011-12-29 | 2014-05-28 | 湖南万容科技股份有限公司 | 板材清洗装置以及板材清洗方法 |
CN103771027A (zh) * | 2014-01-21 | 2014-05-07 | 上海和辉光电有限公司 | 臭氧水水箱 |
TW201713751A (zh) * | 2015-10-06 | 2017-04-16 | 聯華電子股份有限公司 | 酸槽補酸系統與方法 |
CN109107974B (zh) * | 2018-07-20 | 2020-08-11 | 横店集团东磁股份有限公司 | 一种太阳能电池制备用石英器件的清洗方法 |
JP7193026B1 (ja) * | 2022-05-13 | 2022-12-20 | 信越半導体株式会社 | 洗浄液、及びウェーハの洗浄方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4171242A (en) * | 1976-12-17 | 1979-10-16 | International Business Machines Corporation | Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass |
JP2839615B2 (ja) * | 1990-01-24 | 1998-12-16 | 株式会社東芝 | 半導体基板の洗浄液及び半導体装置の製造方法 |
JPH04103124A (ja) * | 1990-08-23 | 1992-04-06 | Nec Corp | 半導体基板の汚染除去方法 |
JPH04113620A (ja) * | 1990-09-03 | 1992-04-15 | Seiko Epson Corp | 半導体基板の洗浄方法 |
JP2984348B2 (ja) * | 1990-10-05 | 1999-11-29 | 株式会社東芝 | 半導体ウェーハの処理方法 |
US5261966A (en) * | 1991-01-28 | 1993-11-16 | Kabushiki Kaisha Toshiba | Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns |
JPH05243195A (ja) * | 1992-03-03 | 1993-09-21 | Nippon Steel Corp | Siウエハーのベベリング部分の鏡面化方法および装置 |
JPH0737850A (ja) * | 1993-07-20 | 1995-02-07 | Mitsubishi Electric Corp | 洗浄装置 |
JP2760418B2 (ja) * | 1994-07-29 | 1998-05-28 | 住友シチックス株式会社 | 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法 |
-
1995
- 1995-03-10 JP JP05097695A patent/JP3575859B2/ja not_active Expired - Lifetime
-
1996
- 1996-03-07 US US08/612,413 patent/US5868855A/en not_active Expired - Fee Related
- 1996-03-08 EP EP96103661A patent/EP0731498B1/de not_active Expired - Lifetime
- 1996-03-08 DE DE69605956T patent/DE69605956T2/de not_active Expired - Fee Related
- 1996-03-08 CN CN96102745A patent/CN1076121C/zh not_active Expired - Fee Related
- 1996-03-08 KR KR1019960006116A patent/KR960035859A/ko active Search and Examination
-
1999
- 1999-09-27 KR KR1019990041274A patent/KR100335557B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0731498A2 (de) | 1996-09-11 |
KR100335557B1 (ko) | 2002-05-08 |
EP0731498B1 (de) | 2000-01-05 |
EP0731498A3 (de) | 1996-11-13 |
JPH08250460A (ja) | 1996-09-27 |
CN1076121C (zh) | 2001-12-12 |
JP3575859B2 (ja) | 2004-10-13 |
DE69605956D1 (de) | 2000-02-10 |
US5868855A (en) | 1999-02-09 |
CN1137687A (zh) | 1996-12-11 |
KR960035859A (ko) | 1996-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |