DE69605956D1 - Oberflächenbehandlungsverfahren für Siliziumsubstraten - Google Patents

Oberflächenbehandlungsverfahren für Siliziumsubstraten

Info

Publication number
DE69605956D1
DE69605956D1 DE69605956T DE69605956T DE69605956D1 DE 69605956 D1 DE69605956 D1 DE 69605956D1 DE 69605956 T DE69605956 T DE 69605956T DE 69605956 T DE69605956 T DE 69605956T DE 69605956 D1 DE69605956 D1 DE 69605956D1
Authority
DE
Germany
Prior art keywords
surface treatment
treatment process
silicon substrates
substrates
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69605956T
Other languages
English (en)
Other versions
DE69605956T2 (de
Inventor
Yuji Fukazawa
Kunihiro Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69605956D1 publication Critical patent/DE69605956D1/de
Application granted granted Critical
Publication of DE69605956T2 publication Critical patent/DE69605956T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
DE69605956T 1995-03-10 1996-03-08 Oberflächenbehandlungsverfahren für Siliziumsubstraten Expired - Fee Related DE69605956T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05097695A JP3575859B2 (ja) 1995-03-10 1995-03-10 半導体基板の表面処理方法及び表面処理装置

Publications (2)

Publication Number Publication Date
DE69605956D1 true DE69605956D1 (de) 2000-02-10
DE69605956T2 DE69605956T2 (de) 2000-06-08

Family

ID=12873851

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69605956T Expired - Fee Related DE69605956T2 (de) 1995-03-10 1996-03-08 Oberflächenbehandlungsverfahren für Siliziumsubstraten

Country Status (6)

Country Link
US (1) US5868855A (de)
EP (1) EP0731498B1 (de)
JP (1) JP3575859B2 (de)
KR (2) KR960035859A (de)
CN (1) CN1076121C (de)
DE (1) DE69605956T2 (de)

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US6127279A (en) * 1994-09-26 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Solution applying method
KR0170902B1 (ko) * 1995-12-29 1999-03-30 김주용 반도체 소자의 제조방법
WO1998008248A1 (fr) * 1996-08-20 1998-02-26 Organo Corporation Procede et dispositif pour laver des composants electroniques ou similaires
US5882425A (en) * 1997-01-23 1999-03-16 Semitool, Inc. Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching
JPH10303171A (ja) * 1997-04-28 1998-11-13 Mitsubishi Electric Corp 半導体ウェーハのウエット処理方法及びウエット処理装置
US6436723B1 (en) 1998-10-16 2002-08-20 Kabushiki Kaisha Toshiba Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device
DE19853486A1 (de) * 1998-11-19 2000-05-31 Wacker Siltronic Halbleitermat Verfahren zur naßchemischen Behandlung von Halbleiterscheiben
US6511914B2 (en) * 1999-01-22 2003-01-28 Semitool, Inc. Reactor for processing a workpiece using sonic energy
FR2790768A1 (fr) * 1999-03-08 2000-09-15 Commissariat Energie Atomique Procede d'attaque chimique du cuivre pour composants microelectroniques
US6799583B2 (en) 1999-05-13 2004-10-05 Suraj Puri Methods for cleaning microelectronic substrates using ultradilute cleaning liquids
US6758938B1 (en) * 1999-08-31 2004-07-06 Micron Technology, Inc. Delivery of dissolved ozone
WO2001026144A1 (en) * 1999-10-01 2001-04-12 Fsi International, Inc. Methods for cleaning microelectronic substrates using ultradilute cleaning liquids
KR100726015B1 (ko) 1999-10-06 2007-06-08 가부시키가이샤 에바라 세이사꾸쇼 기판세정방법 및 그 장치
EP1727189A2 (de) * 1999-12-27 2006-11-29 Matsushita Electric Industrial Co., Ltd. Herstellungsverfahren für ein Halbleiterbauelement
US6638638B2 (en) 2001-09-18 2003-10-28 Samsung Electronics Co., Ltd. Hollow solder structure having improved reliability and method of manufacturing same
US6802911B2 (en) * 2001-09-19 2004-10-12 Samsung Electronics Co., Ltd. Method for cleaning damaged layers and polymer residue from semiconductor device
KR20030056224A (ko) * 2001-12-27 2003-07-04 동부전자 주식회사 웨이퍼 표면의 세정방법
JP4076365B2 (ja) * 2002-04-09 2008-04-16 シャープ株式会社 半導体洗浄装置
US6848455B1 (en) 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
CN1326638C (zh) * 2002-07-19 2007-07-18 上海华虹（集团）有限公司 一种去除硅化物形成过程中多余金属的方法
US7901870B1 (en) 2004-05-12 2011-03-08 Cirrex Systems Llc Adjusting optical properties of optical thin films
CN100349266C (zh) * 2004-07-23 2007-11-14 王文 高效能臭氧水清洗半导体晶圆的系统及其方法
JP4859355B2 (ja) * 2004-08-13 2012-01-25 セイコーエプソン株式会社 トレンチ素子分離構造の形成方法、半導体基板および半導体装置
JP2006066726A (ja) * 2004-08-27 2006-03-09 Toshiba Corp 半導体装置の製造方法及び半導体基板
US7565084B1 (en) 2004-09-15 2009-07-21 Wach Michael L Robustly stabilizing laser systems
WO2006101458A1 (en) * 2005-03-22 2006-09-28 National University Of Singapore Method for patterning ferrelectric/piezoelectric films
US7451838B2 (en) * 2005-08-03 2008-11-18 Smith International, Inc. High energy cutting elements and bits incorporating the same
TW200716267A (en) * 2005-09-23 2007-05-01 Applied Materials Inc Ozonation for elimination of bacteria for wet processing systems
KR100841994B1 (ko) * 2006-12-20 2008-06-27 주식회사 실트론 실리콘 웨이퍼의 산화막 제조 방법
DE102007044787A1 (de) * 2007-09-19 2009-04-02 Siltronic Ag Verfahren zum Reinigen einer Halbleiterscheibe
KR100904452B1 (ko) * 2007-12-06 2009-06-24 세메스 주식회사 오존수혼합액 공급장치 및 방법, 그리고 이를 구비하는기판 처리 설비
KR100904454B1 (ko) * 2007-12-07 2009-06-24 세메스 주식회사 오존수를 사용하는 기판 처리 장치
JP5191880B2 (ja) * 2008-12-26 2013-05-08 東京エレクトロン株式会社 処理装置、処理方法、コンピュータプログラムおよび記憶媒体
US8863763B1 (en) 2009-05-27 2014-10-21 WD Media, LLC Sonication cleaning with a particle counter
US8404056B1 (en) * 2009-05-27 2013-03-26 WD Media, LLC Process control for a sonication cleaning tank
RU2486287C2 (ru) * 2011-04-29 2013-06-27 Антон Викторович Мантузов Способ очистки поверхности полупроводниковых пластин и регенерации травильных растворов
US9005464B2 (en) 2011-06-27 2015-04-14 International Business Machines Corporation Tool for manufacturing semiconductor structures and method of use
CN102523695B (zh) * 2011-12-29 2014-05-28 湖南万容科技股份有限公司 板材清洗装置以及板材清洗方法
CN103771027A (zh) * 2014-01-21 2014-05-07 上海和辉光电有限公司 臭氧水水箱
TW201713751A (zh) * 2015-10-06 2017-04-16 聯華電子股份有限公司 酸槽補酸系統與方法
CN109107974B (zh) * 2018-07-20 2020-08-11 横店集团东磁股份有限公司 一种太阳能电池制备用石英器件的清洗方法
JP7193026B1 (ja) * 2022-05-13 2022-12-20 信越半導体株式会社 洗浄液、及びウェーハの洗浄方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171242A (en) * 1976-12-17 1979-10-16 International Business Machines Corporation Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
JP2839615B2 (ja) * 1990-01-24 1998-12-16 株式会社東芝 半導体基板の洗浄液及び半導体装置の製造方法
JPH04103124A (ja) * 1990-08-23 1992-04-06 Nec Corp 半導体基板の汚染除去方法
JPH04113620A (ja) * 1990-09-03 1992-04-15 Seiko Epson Corp 半導体基板の洗浄方法
JP2984348B2 (ja) * 1990-10-05 1999-11-29 株式会社東芝 半導体ウェーハの処理方法
US5261966A (en) * 1991-01-28 1993-11-16 Kabushiki Kaisha Toshiba Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns
JPH05243195A (ja) * 1992-03-03 1993-09-21 Nippon Steel Corp Ｓｉウエハーのベベリング部分の鏡面化方法および装置
JPH0737850A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 洗浄装置
JP2760418B2 (ja) * 1994-07-29 1998-05-28 住友シチックス株式会社 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法

Also Published As

Publication number Publication date
JP3575859B2 (ja) 2004-10-13
KR100335557B1 (ko) 2002-05-08
US5868855A (en) 1999-02-09
CN1076121C (zh) 2001-12-12
JPH08250460A (ja) 1996-09-27
KR960035859A (ko) 1996-10-28
DE69605956T2 (de) 2000-06-08
EP0731498A3 (de) 1996-11-13
EP0731498A2 (de) 1996-09-11
CN1137687A (zh) 1996-12-11
EP0731498B1 (de) 2000-01-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee