DE69534838D1 - Vertikaler Leistungs-MOSFET mit dicker Metallschicht zur Verminderung des verteilten Widerstandes und Verfahren zur Herstellung - Google Patents

Vertikaler Leistungs-MOSFET mit dicker Metallschicht zur Verminderung des verteilten Widerstandes und Verfahren zur Herstellung

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Publication number
DE69534838D1
DE69534838D1 DE69534838T DE69534838T DE69534838D1 DE 69534838 D1 DE69534838 D1 DE 69534838D1 DE 69534838 T DE69534838 T DE 69534838T DE 69534838 T DE69534838 T DE 69534838T DE 69534838 D1 DE69534838 D1 DE 69534838D1
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Germany
Prior art keywords
manufacture
reduce
metal layer
power mosfet
thick metal
Prior art date
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Expired - Lifetime
Application number
DE69534838T
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English (en)
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DE69534838T2 (de
Inventor
Richard K Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
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Siliconix Inc
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Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of DE69534838D1 publication Critical patent/DE69534838D1/de
Application granted granted Critical
Publication of DE69534838T2 publication Critical patent/DE69534838T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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DE69534838T 1994-12-30 1995-12-29 Vertikaler Leistungs-MOSFET mit dicker Metallschicht zur Verminderung des verteilten Widerstandes und Verfahren zur Herstellung Expired - Lifetime DE69534838T2 (de)

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US367486 1994-12-30
US08/367,486 US5665996A (en) 1994-12-30 1994-12-30 Vertical power mosfet having thick metal layer to reduce distributed resistance

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EP0720234A2 (de) 1996-07-03
JPH08255911A (ja) 1996-10-01
US6066877A (en) 2000-05-23
US6043125A (en) 2000-03-28
DE69534838T2 (de) 2006-10-12
EP0720234B1 (de) 2006-03-08
US5665996A (en) 1997-09-09
EP0720234A3 (de) 1997-09-10

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