DE69532060D1 - Vor einer thermischen Behandlung ausgeführtes Reinigungsverfahren - Google Patents

Vor einer thermischen Behandlung ausgeführtes Reinigungsverfahren

Info

Publication number
DE69532060D1
DE69532060D1 DE69532060T DE69532060T DE69532060D1 DE 69532060 D1 DE69532060 D1 DE 69532060D1 DE 69532060 T DE69532060 T DE 69532060T DE 69532060 T DE69532060 T DE 69532060T DE 69532060 D1 DE69532060 D1 DE 69532060D1
Authority
DE
Germany
Prior art keywords
carried out
thermal treatment
out before
cleaning procedure
before thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69532060T
Other languages
English (en)
Other versions
DE69532060T2 (de
Inventor
Saeed Pirooz
Larry W Shive
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69532060D1 publication Critical patent/DE69532060D1/de
Application granted granted Critical
Publication of DE69532060T2 publication Critical patent/DE69532060T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
    • H01L21/31675—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation
DE69532060T 1994-08-26 1995-08-18 Vor einer thermischen Behandlung ausgeführtes Reinigungsverfahren Expired - Fee Related DE69532060T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US296537 1994-08-26
US08/296,537 US5516730A (en) 1994-08-26 1994-08-26 Pre-thermal treatment cleaning process of wafers

Publications (2)

Publication Number Publication Date
DE69532060D1 true DE69532060D1 (de) 2003-12-11
DE69532060T2 DE69532060T2 (de) 2004-04-15

Family

ID=23142435

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69532060T Expired - Fee Related DE69532060T2 (de) 1994-08-26 1995-08-18 Vor einer thermischen Behandlung ausgeführtes Reinigungsverfahren

Country Status (6)

Country Link
US (2) US5516730A (de)
EP (1) EP0701275B1 (de)
JP (1) JPH0878377A (de)
KR (1) KR100208868B1 (de)
CN (1) CN1057351C (de)
DE (1) DE69532060T2 (de)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2760418B2 (ja) * 1994-07-29 1998-05-28 住友シチックス株式会社 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法
US5516730A (en) * 1994-08-26 1996-05-14 Memc Electronic Materials, Inc. Pre-thermal treatment cleaning process of wafers
KR970023890A (de) * 1995-10-05 1997-05-30
FR2742924B1 (fr) * 1995-12-22 1998-03-20 Jorge Luis Regolini Procede de depot selectif d'un siliciure de metal refractaire sur du silicium et plaquette de silicium metallisee par ce procede
US5811334A (en) * 1995-12-29 1998-09-22 Advanced Micro Devices, Inc. Wafer cleaning procedure useful in the manufacture of a non-volatile memory device
KR100207469B1 (ko) * 1996-03-07 1999-07-15 윤종용 반도체기판의 세정액 및 이를 사용하는 세정방법
US6245155B1 (en) 1996-09-06 2001-06-12 Arch Specialty Chemicals, Inc. Method for removing photoresist and plasma etch residues
US5803980A (en) * 1996-10-04 1998-09-08 Texas Instruments Incorporated De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue
JP4066202B2 (ja) * 1996-10-04 2008-03-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェハの製造方法
US5919311A (en) * 1996-11-15 1999-07-06 Memc Electronic Materials, Inc. Control of SiO2 etch rate using dilute chemical etchants in the presence of a megasonic field
JPH10154713A (ja) * 1996-11-22 1998-06-09 Shin Etsu Handotai Co Ltd シリコンウエーハの熱処理方法およびシリコンウエーハ
US5882425A (en) * 1997-01-23 1999-03-16 Semitool, Inc. Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching
US20030209514A1 (en) * 1997-04-04 2003-11-13 Infineon Technologies North America Corp. Etching composition and use thereof with feedback control of HF in BEOL clean
JPH10309666A (ja) * 1997-05-09 1998-11-24 Speedfam Co Ltd エッジポリッシング装置及びその方法
US5913103A (en) * 1997-05-13 1999-06-15 Integrated Device Technology, Inc. Method of detecting metal contaminants in a wet chemical using enhanced semiconductor growth phenomena
JP3037915B2 (ja) * 1997-09-09 2000-05-08 キヤノン販売株式会社 半導体装置の製造方法
KR100495653B1 (ko) * 1997-09-24 2005-09-30 삼성전자주식회사 웨이퍼세정방법
FR2769248B1 (fr) * 1997-10-06 2000-01-28 St Microelectronics Sa Procede de nettoyage post-polissage mecano-chimique d'une couche d'oxyde ou de nitrure deposee sur un substrat
US5972802A (en) * 1997-10-07 1999-10-26 Seh America, Inc. Prevention of edge stain in silicon wafers by ozone dipping
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
US6100198A (en) * 1998-02-27 2000-08-08 Micron Technology, Inc. Post-planarization, pre-oxide removal ozone treatment
EP1070157A4 (de) * 1998-04-06 2003-02-12 Arch Spec Chem Inc Verfahren zum entfernen von photoresist- und plasmaätzrückständen
US5932022A (en) * 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
US5858861A (en) * 1998-05-15 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing nitride residue by changing the nitride film surface property
JP4200565B2 (ja) * 1998-06-24 2008-12-24 日立金属株式会社 電子部品の洗浄方法
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE19853486A1 (de) * 1998-11-19 2000-05-31 Wacker Siltronic Halbleitermat Verfahren zur naßchemischen Behandlung von Halbleiterscheiben
JP4367587B2 (ja) * 1998-12-01 2009-11-18 財団法人国際科学振興財団 洗浄方法
US6534381B2 (en) * 1999-01-08 2003-03-18 Silicon Genesis Corporation Method for fabricating multi-layered substrates
KR100322880B1 (ko) * 1999-06-26 2002-02-09 박종섭 Ｈｓｇ의 ｔｅｍ분석용 시편 핸드링 장치 및 그를 이용한 시편 에칭 방법
US6230720B1 (en) * 1999-08-16 2001-05-15 Memc Electronic Materials, Inc. Single-operation method of cleaning semiconductors after final polishing
US6982006B1 (en) 1999-10-19 2006-01-03 Boyers David G Method and apparatus for treating a substrate with an ozone-solvent solution
JP2003512736A (ja) * 1999-10-19 2003-04-02 フィファー・スミス・コーポレーション オゾン−溶媒溶液を用いた基体の処理方法及び処理装置
US6371134B2 (en) 2000-01-31 2002-04-16 Advanced Micro Devices, Inc. Ozone cleaning of wafers
AU2001245664A1 (en) * 2000-03-13 2001-09-24 Cfmt, Inc. Processes and apparatus for treating electronic components
US6190062B1 (en) 2000-04-26 2001-02-20 Advanced Micro Devices, Inc. Cleaning chamber built into SEM for plasma or gaseous phase cleaning
US6794229B2 (en) 2000-04-28 2004-09-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
US7364625B2 (en) * 2000-05-30 2008-04-29 Fsi International, Inc. Rinsing processes and equipment
US6890861B1 (en) 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6506254B1 (en) 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
TW527443B (en) * 2000-07-28 2003-04-11 Infineon Technologies Corp Etching composition and use thereof with feedback control of HF in BEOL clean
WO2002015255A1 (en) * 2000-08-11 2002-02-21 Chem Trace Corporation System and method for cleaning semiconductor fabrication equipment parts
TW464966B (en) * 2000-08-17 2001-11-21 Macronix Int Co Ltd Semiconductor wafer clean method to prevent corrosion of metal silicide layer
KR100386083B1 (ko) * 2000-09-22 2003-06-02 주식회사 하이닉스반도체 반도체 기판의 표면결함을 줄이는 방법
US6488038B1 (en) * 2000-11-06 2002-12-03 Semitool, Inc. Method for cleaning semiconductor substrates
US20110263126A1 (en) 2000-11-22 2011-10-27 Sumco Corporation Method for manufacturing a silicon wafer
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6638365B2 (en) * 2001-10-09 2003-10-28 Chartered Semiconductor Manufacturing Ltd. Method for obtaining clean silicon surfaces for semiconductor manufacturing
KR100422905B1 (ko) * 2001-10-31 2004-03-16 아남반도체 주식회사 반도체 소자 제조 방법
KR100954711B1 (ko) * 2002-04-17 2010-04-23 램 리써치 코포레이션 플라즈마 반응 챔버용 실리콘 부품
US6846726B2 (en) * 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
DE10239773B3 (de) * 2002-08-29 2004-02-26 Wacker Siltronic Ag Halbleiterscheibe und Verfahren zur Reinigung einer Halbleiterscheibe
AU2003276093A1 (en) * 2002-10-14 2004-05-04 Sez Ag Method for generating oxide layers on semiconductor substrates
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US7091132B2 (en) * 2003-07-24 2006-08-15 Applied Materials, Inc. Ultrasonic assisted etch using corrosive liquids
DE10349073A1 (de) * 2003-10-14 2005-05-19 Rolls-Royce Deutschland Ltd & Co Kg Hohlfanschaufel für Flugzeugtriebwerke und Verfahren zu deren Herstellung
US7754609B1 (en) 2003-10-28 2010-07-13 Applied Materials, Inc. Cleaning processes for silicon carbide materials
US7041226B2 (en) * 2003-11-04 2006-05-09 Lexmark International, Inc. Methods for improving flow through fluidic channels
US20050130420A1 (en) * 2003-12-10 2005-06-16 Huang Chih Y. Cleaning method using ozone DI process
FR2868599B1 (fr) * 2004-03-30 2006-07-07 Soitec Silicon On Insulator Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur
US20050253313A1 (en) * 2004-05-14 2005-11-17 Poco Graphite, Inc. Heat treating silicon carbide articles
US7052553B1 (en) * 2004-12-01 2006-05-30 Lam Research Corporation Wet cleaning of electrostatic chucks
US20060131276A1 (en) * 2004-12-17 2006-06-22 Johnston Steven W Uniformity in batch spray processing using independent cassette rotation
JP2007207791A (ja) * 2006-01-31 2007-08-16 Fujitsu Ltd 半導体装置の製造方法
JP5156752B2 (ja) * 2006-11-01 2013-03-06 クアンタム グローバル テクノロジーズ リミテッド ライアビリティ カンパニー チャンバーコンポーネントを洗浄する方法及び装置
US8741066B2 (en) * 2007-02-16 2014-06-03 Akrion Systems, Llc Method for cleaning substrates utilizing surface passivation and/or oxide layer growth to protect from pitting
DE102007039626A1 (de) * 2007-08-22 2009-02-26 Wacker Chemie Ag Verfahren zum Reinigen von polykristallinem Silicium
KR101240333B1 (ko) * 2007-08-24 2013-03-07 삼성전자주식회사 마스크 표면에 흡착된 이온 분석 장치 및 방법
CN101752213B (zh) * 2008-12-08 2011-09-07 北京有色金属研究总院 一种消除硅片表面水雾的低温热处理工艺
US20110079250A1 (en) * 2009-10-01 2011-04-07 Mt Systems, Inc. Post-texturing cleaning method for photovoltaic silicon substrates
US8334161B2 (en) * 2010-07-02 2012-12-18 Sunpower Corporation Method of fabricating a solar cell with a tunnel dielectric layer
US10026642B2 (en) 2016-03-07 2018-07-17 Sunedison Semiconductor Limited (Uen201334164H) Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereof
CN105932097A (zh) * 2016-05-13 2016-09-07 浙江晶科能源有限公司 一种硅片的氧化方法
WO2020007902A1 (en) 2018-07-05 2020-01-09 Bayer Aktiengesellschaft Substituted thiophenecarboxamides and analogues as antibacterials agents
JP2022512712A (ja) 2018-10-18 2022-02-07 バイエル・アクチエンゲゼルシヤフト ヘテロアリールアミノキノリン類及び類似体
CN111681991A (zh) * 2020-06-19 2020-09-18 西安微电子技术研究所 一种多晶硅表面粗糙度的处理方法
WO2023104714A1 (en) 2021-12-10 2023-06-15 Syngenta Crop Protection Ag Pesticidally active pyridazinone compounds
WO2023213626A1 (en) 2022-05-03 2023-11-09 Bayer Aktiengesellschaft Use of (5s)-3-[3-(3-chloro-2-fluorophenoxy)-6-methylpyridazin-4-yl]-5-(2-chloro-4-methylbenzyl)-5,6-dihydro-4h-1,2,4-oxadiazine for controlling unwanted microorganisms
WO2024068519A1 (en) 2022-09-28 2024-04-04 Bayer Aktiengesellschaft 3-(hetero)aryl-5-chlorodifluoromethyl-1,2,4-oxadiazole as fungicide

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3540469A1 (de) * 1985-11-14 1987-05-21 Wacker Chemitronic Verfahren zum schutz von polierten siliciumoberflaechen
JPS62198127A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体ウエハの洗浄方法
US4863561A (en) * 1986-12-09 1989-09-05 Texas Instruments Incorporated Method and apparatus for cleaning integrated circuit wafers
DE3818714A1 (de) * 1988-06-01 1989-12-14 Wacker Chemitronic Verfahren zur nasschemischen oberflaechenbehandlung von halbleiterscheiben
US5181985A (en) * 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
DE3823765A1 (de) * 1988-07-13 1990-01-18 Wacker Chemitronic Verfahren zur konservierung der oberflaeche von siliciumscheiben
US4885056A (en) * 1988-09-02 1989-12-05 Motorola Inc. Method of reducing defects on semiconductor wafers
US5288333A (en) * 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
JP2839615B2 (ja) * 1990-01-24 1998-12-16 株式会社東芝 半導体基板の洗浄液及び半導体装置の製造方法
DE4002327A1 (de) * 1990-01-26 1991-08-01 Wacker Chemitronic Verfahren zur nasschemischen behandlung von halbleiteroberflaechen und loesung zu seiner durchfuehrung
JPH03228328A (ja) * 1990-02-02 1991-10-09 Nec Corp 半導体基板の水洗方法
US5219613A (en) * 1990-06-13 1993-06-15 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for producing storage-stable surfaces of polished silicon wafers
JPH04113620A (ja) * 1990-09-03 1992-04-15 Seiko Epson Corp 半導体基板の洗浄方法
JP2984348B2 (ja) * 1990-10-05 1999-11-29 株式会社東芝 半導体ウェーハの処理方法
DE69231971T2 (de) * 1991-01-24 2002-04-04 Wako Pure Chem Ind Ltd Lösungen zur Oberflächenbehandlung von Halbleitern
US5275667A (en) * 1992-05-04 1994-01-04 Motorola, Inc. Method of characterizing the level of cleanliness of an inorganic surface
US5308400A (en) * 1992-09-02 1994-05-03 United Microelectronics Corporation Room temperature wafer cleaning process
US5516730A (en) * 1994-08-26 1996-05-14 Memc Electronic Materials, Inc. Pre-thermal treatment cleaning process of wafers

Also Published As

Publication number Publication date
EP0701275B1 (de) 2003-11-05
CN1057351C (zh) 2000-10-11
EP0701275A2 (de) 1996-03-13
JPH0878377A (ja) 1996-03-22
EP0701275A3 (de) 1997-05-21
US5516730A (en) 1996-05-14
US5712198A (en) 1998-01-27
KR100208868B1 (ko) 1999-07-15
CN1127805A (zh) 1996-07-31
DE69532060T2 (de) 2004-04-15
KR960009042A (ko) 1996-03-22

Similar Documents

Publication Publication Date Title
DE69532060D1 (de) Vor einer thermischen Behandlung ausgeführtes Reinigungsverfahren
DE69509515T2 (de) Spülverfahren zum desinfizieren
DE69528303T2 (de) Vorrichtung zur thermischen Behandlung
DK0792144T3 (da) Rengøringsvæv behandlet med vand-i-lipid emulsion
DE69924750D1 (de) Gerät zur thermischen behandlung von gewebe
NO930010D0 (no) Fremgangsmaate ved vannrensing
DE69122740T2 (de) Reinigungsverfahren
DE69533177D1 (de) Wasserbehandlungsvorrichtung
DE69711311T2 (de) Vorrichtung zur thermischen Behandlung von Gewebe
DE69521035T2 (de) Reinigungsverfahren
DE69502763T2 (de) Reinigungsgeräte
DE29681082U1 (de) Dampfreinigungsvorrichtung
NO912862D0 (no) Anordning for rengjoering av overflater.
DE69521797T2 (de) Reinigungsverfahren
DE69505691T2 (de) Reinigungsverfahren
DE69525349T2 (de) Behandlung von sclaganfall mit einer infiltration von makrophagen assoziiert
DE69516537D1 (de) Reinigungsverfahren
DE9407101U1 (de) Thermisches Hautbehandlungsgerät
DE69500373T2 (de) Reinigungsverfahren
DE29702313U1 (de) Flächenelement zur thermischen Behandlung eines Raumes
DE29702410U1 (de) Flächenelement zur thermischen Behandlung eines Raumes
KR950027501U (ko) 수처리 장치
DE69528372D1 (de) Orale behandlung
KR950026706U (ko) 치료용 발열기
IT1288461B1 (it) Procedimento e dispositivo per la pulitura di tessuti.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee