DE69531580D1 - Fabrikationsmethode von aufhängungsteilen für mikrogefertigte sensoren - Google Patents

Fabrikationsmethode von aufhängungsteilen für mikrogefertigte sensoren

Info

Publication number
DE69531580D1
DE69531580D1 DE69531580T DE69531580T DE69531580D1 DE 69531580 D1 DE69531580 D1 DE 69531580D1 DE 69531580 T DE69531580 T DE 69531580T DE 69531580 T DE69531580 T DE 69531580T DE 69531580 D1 DE69531580 D1 DE 69531580D1
Authority
DE
Germany
Prior art keywords
micro
fabrication method
hanging parts
fabricated sensors
fabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69531580T
Other languages
English (en)
Other versions
DE69531580T2 (de
Inventor
K Erickson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
I/O Sensors Inc
Original Assignee
I/O Sensors Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by I/O Sensors Inc filed Critical I/O Sensors Inc
Application granted granted Critical
Publication of DE69531580D1 publication Critical patent/DE69531580D1/de
Publication of DE69531580T2 publication Critical patent/DE69531580T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges
DE69531580T 1994-03-28 1995-03-16 Fabrikationsmethode von aufhängungsteilen für mikrogefertigte sensoren Expired - Lifetime DE69531580T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/218,363 US5484073A (en) 1994-03-28 1994-03-28 Method for fabricating suspension members for micromachined sensors
US218363 1994-03-28
PCT/US1995/003377 WO1995026567A1 (en) 1994-03-28 1995-03-16 Method for fabricating suspension members for micromachined sensors

Publications (2)

Publication Number Publication Date
DE69531580D1 true DE69531580D1 (de) 2003-10-02
DE69531580T2 DE69531580T2 (de) 2004-07-01

Family

ID=22814808

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69531580T Expired - Lifetime DE69531580T2 (de) 1994-03-28 1995-03-16 Fabrikationsmethode von aufhängungsteilen für mikrogefertigte sensoren

Country Status (8)

Country Link
US (1) US5484073A (de)
EP (1) EP0700580B1 (de)
JP (2) JP3741723B2 (de)
AU (1) AU2102195A (de)
CA (1) CA2159642C (de)
DE (1) DE69531580T2 (de)
HK (1) HK1004876A1 (de)
WO (1) WO1995026567A1 (de)

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US6506620B1 (en) 2000-11-27 2003-01-14 Microscan Systems Incorporated Process for manufacturing micromechanical and microoptomechanical structures with backside metalization
US6479315B1 (en) 2000-11-27 2002-11-12 Microscan Systems, Inc. Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step
US6479311B1 (en) 2000-11-27 2002-11-12 Microscan Systems, Inc. Process for manufacturing micromechanical and microoptomechanical structures with pre-applied patterning
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US20040240034A1 (en) * 2001-11-30 2004-12-02 Scharf Bruce R. Diffraction compensation using a patterned reflector
US7140250B2 (en) * 2005-02-18 2006-11-28 Honeywell International Inc. MEMS teeter-totter accelerometer having reduced non-linearty
US7687126B2 (en) 2005-08-22 2010-03-30 3M Innovative Properties Company Adhesive articles and release liners
EP1921042A1 (de) * 2006-11-10 2008-05-14 ETA SA Manufacture Horlogère Suisse Herstellung von mikromechanischer mehrschichtiger Bauteile aus Silizium
EP2673663B1 (de) * 2011-02-07 2021-09-01 ION Geophysical Corporation Verfahren und vorrichtung zur erfassung von unterwassersignalen
US8519515B2 (en) 2011-04-13 2013-08-27 United Microlectronics Corp. TSV structure and method for forming the same
US8481425B2 (en) 2011-05-16 2013-07-09 United Microelectronics Corp. Method for fabricating through-silicon via structure
US8822336B2 (en) 2011-06-16 2014-09-02 United Microelectronics Corp. Through-silicon via forming method
US8828745B2 (en) 2011-07-06 2014-09-09 United Microelectronics Corp. Method for manufacturing through-silicon via
US8518823B2 (en) 2011-12-23 2013-08-27 United Microelectronics Corp. Through silicon via and method of forming the same
US8609529B2 (en) 2012-02-01 2013-12-17 United Microelectronics Corp. Fabrication method and structure of through silicon via
US8691600B2 (en) 2012-05-02 2014-04-08 United Microelectronics Corp. Method for testing through-silicon-via (TSV) structures
US8691688B2 (en) 2012-06-18 2014-04-08 United Microelectronics Corp. Method of manufacturing semiconductor structure
US9275933B2 (en) 2012-06-19 2016-03-01 United Microelectronics Corp. Semiconductor device
US8900996B2 (en) 2012-06-21 2014-12-02 United Microelectronics Corp. Through silicon via structure and method of fabricating the same
US8525296B1 (en) 2012-06-26 2013-09-03 United Microelectronics Corp. Capacitor structure and method of forming the same
US8912844B2 (en) 2012-10-09 2014-12-16 United Microelectronics Corp. Semiconductor structure and method for reducing noise therein
DE102012219660B4 (de) * 2012-10-26 2023-10-12 Robert Bosch Gmbh Mechanisches Bauteil
US9035457B2 (en) 2012-11-29 2015-05-19 United Microelectronics Corp. Substrate with integrated passive devices and method of manufacturing the same
US8716104B1 (en) 2012-12-20 2014-05-06 United Microelectronics Corp. Method of fabricating isolation structure
CN104045049A (zh) * 2013-03-12 2014-09-17 北京大学 一种基于硅层转移技术（solt）的高精度加速度计的加工方法
US8884398B2 (en) 2013-04-01 2014-11-11 United Microelectronics Corp. Anti-fuse structure and programming method thereof
US9287173B2 (en) 2013-05-23 2016-03-15 United Microelectronics Corp. Through silicon via and process thereof
US9123730B2 (en) 2013-07-11 2015-09-01 United Microelectronics Corp. Semiconductor device having through silicon trench shielding structure surrounding RF circuit
US9024416B2 (en) 2013-08-12 2015-05-05 United Microelectronics Corp. Semiconductor structure
US8916471B1 (en) 2013-08-26 2014-12-23 United Microelectronics Corp. Method for forming semiconductor structure having through silicon via for signal and shielding structure
US9048223B2 (en) 2013-09-03 2015-06-02 United Microelectronics Corp. Package structure having silicon through vias connected to ground potential
US9117804B2 (en) 2013-09-13 2015-08-25 United Microelectronics Corporation Interposer structure and manufacturing method thereof
US9343359B2 (en) 2013-12-25 2016-05-17 United Microelectronics Corp. Integrated structure and method for fabricating the same
US10340203B2 (en) 2014-02-07 2019-07-02 United Microelectronics Corp. Semiconductor structure with through silicon via and method for fabricating and testing the same
US9755139B2 (en) * 2014-06-30 2017-09-05 Texas Instruments Incorporated Piezoeletric wet etch process with reduced resist lifting and controlled undercut
CN105445495B (zh) * 2014-07-16 2018-11-02 中国科学院地质与地球物理研究所 一种对称的mems加速度敏感芯片及其制造工艺
US10611628B2 (en) * 2016-12-29 2020-04-07 Epack, Inc. MEMS isolation platform with three-dimensional vibration and stress isolation

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US4071838A (en) * 1976-02-09 1978-01-31 Diax Corporation Solid state force transducer and method of making same
US4106976A (en) * 1976-03-08 1978-08-15 International Business Machines Corporation Ink jet nozzle method of manufacture
US4144516A (en) * 1976-03-29 1979-03-13 Aine Harry E Solid state transducer and method of making same
US4597003A (en) * 1983-12-01 1986-06-24 Harry E. Aine Chemical etching of a semiconductive wafer by undercutting an etch stopped layer
JPS6197572A (ja) * 1984-10-19 1986-05-16 Nissan Motor Co Ltd 半導体加速度センサの製造方法
US5000817A (en) * 1984-10-24 1991-03-19 Aine Harry E Batch method of making miniature structures assembled in wafer form
US4732647A (en) * 1984-10-24 1988-03-22 Aine Harry E Batch method of making miniature capacitive force transducers assembled in wafer form
US4679434A (en) * 1985-07-25 1987-07-14 Litton Systems, Inc. Integrated force balanced accelerometer
US4670092A (en) * 1986-04-18 1987-06-02 Rockwell International Corporation Method of fabricating a cantilever beam for a monolithic accelerometer
US4922756A (en) * 1988-06-20 1990-05-08 Triton Technologies, Inc. Micro-machined accelerometer
JPS6376483A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd 半導体加速度センサの製造方法
US4805456A (en) * 1987-05-19 1989-02-21 Massachusetts Institute Of Technology Resonant accelerometer
US5195371A (en) * 1988-01-13 1993-03-23 The Charles Stark Draper Laboratory, Inc. Semiconductor chip transducer
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JPH02218172A (ja) * 1989-02-18 1990-08-30 Nippondenso Co Ltd 半導体加速度センサの製造方法
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JPH05142247A (ja) * 1991-11-20 1993-06-08 Hitachi Ltd 半導体加速度センサ

Also Published As

Publication number Publication date
JPH08511379A (ja) 1996-11-26
EP0700580A1 (de) 1996-03-13
AU2102195A (en) 1995-10-17
WO1995026567A1 (en) 1995-10-05
EP0700580A4 (de) 1998-02-11
JP4267611B2 (ja) 2009-05-27
HK1004876A1 (en) 1998-12-11
EP0700580B1 (de) 2003-08-27
US5484073A (en) 1996-01-16
CA2159642A1 (en) 1995-09-29
DE69531580T2 (de) 2004-07-01
JP3741723B2 (ja) 2006-02-01
CA2159642C (en) 1999-08-17
JP2006116693A (ja) 2006-05-11

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