DE69531070D1 - Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren - Google Patents

Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren

Info

Publication number
DE69531070D1
DE69531070D1 DE69531070T DE69531070T DE69531070D1 DE 69531070 D1 DE69531070 D1 DE 69531070D1 DE 69531070 T DE69531070 T DE 69531070T DE 69531070 T DE69531070 T DE 69531070T DE 69531070 D1 DE69531070 D1 DE 69531070D1
Authority
DE
Germany
Prior art keywords
capacitor
integrated circuit
manufacturing process
manufacturing
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69531070T
Other languages
English (en)
Other versions
DE69531070T2 (de
Inventor
Yasuhiro Uemoto
Eiji Fujii
Yasuhiro Shimada
Masamichi Azuma
Koji Arita
Yoshihisa Nagano
Atsuo Inoue
Yasufumi Izutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06327818A external-priority patent/JP3098923B2/ja
Priority claimed from JP7194578A external-priority patent/JPH0945877A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69531070D1 publication Critical patent/DE69531070D1/de
Publication of DE69531070T2 publication Critical patent/DE69531070T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69531070T 1994-12-28 1995-12-06 Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren Expired - Lifetime DE69531070T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP06327818A JP3098923B2 (ja) 1994-12-28 1994-12-28 半導体装置およびその製造方法
JP32781894 1994-12-28
JP7194578A JPH0945877A (ja) 1995-07-31 1995-07-31 容量素子の製造方法
JP19457895 1995-07-31

Publications (2)

Publication Number Publication Date
DE69531070D1 true DE69531070D1 (de) 2003-07-17
DE69531070T2 DE69531070T2 (de) 2004-04-22

Family

ID=26508587

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69525827T Expired - Fee Related DE69525827T2 (de) 1994-12-28 1995-12-06 Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung
DE69527160T Expired - Fee Related DE69527160T2 (de) 1994-12-28 1995-12-06 Herstellungsverfahren eines Kondensators für integrierte Schaltkreise
DE69531070T Expired - Lifetime DE69531070T2 (de) 1994-12-28 1995-12-06 Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69525827T Expired - Fee Related DE69525827T2 (de) 1994-12-28 1995-12-06 Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung
DE69527160T Expired - Fee Related DE69527160T2 (de) 1994-12-28 1995-12-06 Herstellungsverfahren eines Kondensators für integrierte Schaltkreise

Country Status (5)

Country Link
US (2) US5929475A (de)
EP (3) EP0971393B1 (de)
KR (1) KR960026878A (de)
CN (2) CN1075243C (de)
DE (3) DE69525827T2 (de)

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JP3165093B2 (ja) 1997-11-13 2001-05-14 松下電子工業株式会社 半導体装置およびその製造方法
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JP3830652B2 (ja) * 1998-02-27 2006-10-04 富士通株式会社 半導体装置及びその製造方法
KR100279297B1 (ko) * 1998-06-20 2001-02-01 윤종용 반도체 장치 및 그의 제조 방법
KR100293720B1 (ko) * 1998-10-01 2001-07-12 박종섭 반도체 소자의 캐패시터 형성 방법
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US8636876B2 (en) 2004-12-08 2014-01-28 R. Ernest Demaray Deposition of LiCoO2
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Also Published As

Publication number Publication date
DE69527160T2 (de) 2002-11-28
EP0971393B1 (de) 2002-06-19
CN1180465C (zh) 2004-12-15
DE69525827D1 (de) 2002-04-18
EP0720213B1 (de) 2002-03-13
US6214660B1 (en) 2001-04-10
DE69525827T2 (de) 2002-11-14
EP0971392A1 (de) 2000-01-12
US5929475A (en) 1999-07-27
CN1129354A (zh) 1996-08-21
EP0720213A3 (de) 1997-05-07
EP0720213A2 (de) 1996-07-03
EP0971393A1 (de) 2000-01-12
KR960026878A (ko) 1996-07-22
DE69531070T2 (de) 2004-04-22
CN1075243C (zh) 2001-11-21
EP0971392B1 (de) 2003-06-11
DE69527160D1 (de) 2002-07-25
CN1345088A (zh) 2002-04-17

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8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8320 Willingness to grant licences declared (paragraph 23)