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Publication numberDE69528409 D1
Publication typeGrant
Application numberDE1995628409
Publication date7 Nov 2002
Filing date28 Apr 1995
Priority date28 Apr 1994
Also published asDE69528409T2, EP0680084A1, EP0680084B1, US5565384
Publication number1995628409, 95628409, DE 69528409 D1, DE 69528409D1, DE-D1-69528409, DE1995628409, DE69528409 D1, DE69528409D1, DE95628409
InventorsRobert H Havemann
ApplicantTexas Instruments Inc
Export CitationBiBTeX, EndNote, RefMan
Verfahren zur Herstellung von Löchern in einer dielektrischen Schicht mit niedriger Dielektrizitätskonstante auf einer Halbleitervorrichtung A process for producing holes in a dielectric layer with low dielectric constant on a semiconductor device translated from German
DE 69528409 D1
Abstract  available in
Description  available in
Claims  available in
International ClassificationH01L21/312, H01L21/316, H01L23/522, H01L21/768
Cooperative ClassificationY10S148/051, H01L21/76802, H01L21/3121, H01L21/76834, H01L21/76801, H01L21/31612
European ClassificationH01L21/768B2, H01L21/768B
Legal Events
30 Oct 20038364No opposition during term of opposition
17 Feb 20118339Ceased/non-payment of the annual fee