DE69527160T2 - Herstellungsverfahren eines Kondensators für integrierte Schaltkreise - Google Patents
Herstellungsverfahren eines Kondensators für integrierte SchaltkreiseInfo
- Publication number
- DE69527160T2 DE69527160T2 DE69527160T DE69527160T DE69527160T2 DE 69527160 T2 DE69527160 T2 DE 69527160T2 DE 69527160 T DE69527160 T DE 69527160T DE 69527160 T DE69527160 T DE 69527160T DE 69527160 T2 DE69527160 T2 DE 69527160T2
- Authority
- DE
- Germany
- Prior art keywords
- capacitor
- manufacturing process
- integrated circuits
- circuits
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06327818A JP3098923B2 (ja) | 1994-12-28 | 1994-12-28 | 半導体装置およびその製造方法 |
JP7194578A JPH0945877A (ja) | 1995-07-31 | 1995-07-31 | 容量素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69527160D1 DE69527160D1 (de) | 2002-07-25 |
DE69527160T2 true DE69527160T2 (de) | 2002-11-28 |
Family
ID=26508587
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69527160T Expired - Fee Related DE69527160T2 (de) | 1994-12-28 | 1995-12-06 | Herstellungsverfahren eines Kondensators für integrierte Schaltkreise |
DE69525827T Expired - Fee Related DE69525827T2 (de) | 1994-12-28 | 1995-12-06 | Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung |
DE69531070T Expired - Lifetime DE69531070T2 (de) | 1994-12-28 | 1995-12-06 | Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69525827T Expired - Fee Related DE69525827T2 (de) | 1994-12-28 | 1995-12-06 | Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung |
DE69531070T Expired - Lifetime DE69531070T2 (de) | 1994-12-28 | 1995-12-06 | Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (2) | US5929475A (de) |
EP (3) | EP0971392B1 (de) |
KR (1) | KR960026878A (de) |
CN (2) | CN1075243C (de) |
DE (3) | DE69527160T2 (de) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69333864T2 (de) * | 1992-06-12 | 2006-06-29 | Matsushita Electric Industrial Co., Ltd., Kadoma | Herstellungsverfahren für Halbleiterbauelement mit Kondensator |
JP3028080B2 (ja) * | 1997-06-18 | 2000-04-04 | 日本電気株式会社 | 半導体装置の構造およびその製造方法 |
JPH1154721A (ja) | 1997-07-29 | 1999-02-26 | Nec Corp | 半導体装置の製造方法および製造装置 |
JP3165093B2 (ja) | 1997-11-13 | 2001-05-14 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
KR100252854B1 (ko) | 1997-12-26 | 2000-04-15 | 김영환 | 반도체 메모리 장치 및 그 제조방법 |
JP3830652B2 (ja) * | 1998-02-27 | 2006-10-04 | 富士通株式会社 | 半導体装置及びその製造方法 |
KR100279297B1 (ko) * | 1998-06-20 | 2001-02-01 | 윤종용 | 반도체 장치 및 그의 제조 방법 |
KR100293720B1 (ko) | 1998-10-01 | 2001-07-12 | 박종섭 | 반도체 소자의 캐패시터 형성 방법 |
US6323044B1 (en) * | 1999-01-12 | 2001-11-27 | Agere Systems Guardian Corp. | Method of forming capacitor having the lower metal electrode for preventing undesired defects at the surface of the metal plug |
US6340827B1 (en) * | 1999-01-13 | 2002-01-22 | Agere Systems Guardian Corp. | Diffusion barrier for use with high dielectric constant materials and electronic devices incorporating same |
US6258655B1 (en) * | 1999-03-01 | 2001-07-10 | Micron Technology, Inc. | Method for improving the resistance degradation of thin film capacitors |
JP2000353700A (ja) | 1999-06-14 | 2000-12-19 | Mitsubishi Electric Corp | 高誘電率薄膜の形成方法および半導体装置の製造方法 |
JP2001148465A (ja) * | 1999-11-18 | 2001-05-29 | Nec Corp | 半導体装置の製造方法 |
DE19958203A1 (de) * | 1999-12-02 | 2001-06-13 | Infineon Technologies Ag | Herstellungsverfahren einer oxidationsgeschüzten Elektrode für einen kapazitive Elektrodenstruktur |
US6348373B1 (en) * | 2000-03-29 | 2002-02-19 | Sharp Laboratories Of America, Inc. | Method for improving electrical properties of high dielectric constant films |
US6541861B2 (en) * | 2000-06-30 | 2003-04-01 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method including forming step of SOI structure and semiconductor device having SOI structure |
US20050191765A1 (en) * | 2000-08-04 | 2005-09-01 | Cem Basceri | Thin film capacitor with substantially homogenous stoichiometry |
JP2002100740A (ja) * | 2000-09-21 | 2002-04-05 | Oki Electric Ind Co Ltd | 半導体記憶素子及びその製造方法 |
US6750113B2 (en) * | 2001-01-17 | 2004-06-15 | International Business Machines Corporation | Metal-insulator-metal capacitor in copper |
DE10120516B4 (de) * | 2001-04-26 | 2004-09-16 | Infineon Technologies Ag | Halbleiterspeicherzelle und Verfahren zu ihrer Herstellung |
US6900498B2 (en) | 2001-05-08 | 2005-05-31 | Advanced Technology Materials, Inc. | Barrier structures for integration of high K oxides with Cu and Al electrodes |
US7469558B2 (en) * | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
US7404877B2 (en) * | 2001-11-09 | 2008-07-29 | Springworks, Llc | Low temperature zirconia based thermal barrier layer by PVD |
US6884327B2 (en) | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
US7378356B2 (en) * | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
US20030175142A1 (en) * | 2002-03-16 | 2003-09-18 | Vassiliki Milonopoulou | Rare-earth pre-alloyed PVD targets for dielectric planar applications |
US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US9793523B2 (en) | 2002-08-09 | 2017-10-17 | Sapurast Research Llc | Electrochemical apparatus with barrier layer protected substrate |
AU2003261463A1 (en) * | 2002-08-27 | 2004-03-19 | Symmorphix, Inc. | Optically coupling into highly uniform waveguides |
EP1394811A1 (de) * | 2002-08-28 | 2004-03-03 | Matsushita Electric Industrial Co., Ltd. | Beschleunigtes Testverfahren für ferroelektrischen Speicher |
US7230316B2 (en) | 2002-12-27 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having transferred integrated circuit |
US7238628B2 (en) * | 2003-05-23 | 2007-07-03 | Symmorphix, Inc. | Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
DE602005017512D1 (de) | 2004-12-08 | 2009-12-17 | Symmorphix Inc | Abscheidung von licoo2 |
US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
US7838133B2 (en) * | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
WO2008039471A2 (en) | 2006-09-29 | 2008-04-03 | Infinite Power Solutions, Inc. | Masking of and material constraint for depositing battery layers on flexible substrates |
US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
US20080251889A1 (en) * | 2007-04-11 | 2008-10-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device |
US8552529B2 (en) | 2007-04-11 | 2013-10-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device |
US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
TWI441937B (zh) | 2007-12-21 | 2014-06-21 | Infinite Power Solutions Inc | 形成用於電解質薄膜之濺鍍靶材的方法 |
KR101606183B1 (ko) | 2008-01-11 | 2016-03-25 | 사푸라스트 리써치 엘엘씨 | 박막 배터리 및 기타 소자를 위한 박막 캡슐화 |
CN101494195B (zh) * | 2008-01-24 | 2010-10-20 | 中芯国际集成电路制造(上海)有限公司 | 一种电容的制作方法 |
KR101672254B1 (ko) | 2008-04-02 | 2016-11-08 | 사푸라스트 리써치 엘엘씨 | 에너지 수확과 관련된 에너지 저장 장치를 위한 수동적인 과전압/부족전압 제어 및 보호 |
DE102008030942A1 (de) * | 2008-07-02 | 2010-01-07 | Christoph Miethke Gmbh & Co Kg | Hirnwasserdrainagen |
CN102119454B (zh) | 2008-08-11 | 2014-07-30 | 无穷动力解决方案股份有限公司 | 具有用于电磁能量收集的一体收集器表面的能量设备及其方法 |
KR101613671B1 (ko) | 2008-09-12 | 2016-04-19 | 사푸라스트 리써치 엘엘씨 | 전자기 에너지에 의해 데이터 통신을 하는 통합 도전성 표면을 가진 에너지 장치 및 그 통신 방법 |
US8508193B2 (en) | 2008-10-08 | 2013-08-13 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
US8599572B2 (en) | 2009-09-01 | 2013-12-03 | Infinite Power Solutions, Inc. | Printed circuit board with integrated thin film battery |
US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
US20110300432A1 (en) | 2010-06-07 | 2011-12-08 | Snyder Shawn W | Rechargeable, High-Density Electrochemical Device |
US9478411B2 (en) * | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
US9478438B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
TWI691092B (zh) | 2018-11-05 | 2020-04-11 | 力晶積成電子製造股份有限公司 | 電容單元及其製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59119735A (ja) * | 1982-12-27 | 1984-07-11 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0751742B2 (ja) * | 1986-11-14 | 1995-06-05 | セイコーエプソン株式会社 | 時計用外装部品 |
JPS6430252A (en) * | 1987-07-27 | 1989-02-01 | Mitsubishi Electric Corp | Semiconductor device |
DE69023644T2 (de) * | 1989-05-07 | 1996-04-18 | Tadahiro Ohmi | Verfahren zur herstellung eines siliziumoxydfilmes. |
US5005102A (en) * | 1989-06-20 | 1991-04-02 | Ramtron Corporation | Multilayer electrodes for integrated circuit capacitors |
DE69017802T2 (de) * | 1989-08-30 | 1995-09-07 | Nec Corp | Dünnfilmkondensator und dessen Herstellungsverfahren. |
KR100266046B1 (ko) * | 1990-09-28 | 2000-09-15 | 야스카와 히데아키 | 반도체장치 |
US5514822A (en) * | 1991-12-13 | 1996-05-07 | Symetrix Corporation | Precursors and processes for making metal oxides |
US5401680A (en) * | 1992-02-18 | 1995-03-28 | National Semiconductor Corporation | Method for forming a ceramic oxide capacitor having barrier layers |
EP0557937A1 (de) * | 1992-02-25 | 1993-09-01 | Ramtron International Corporation | Ozongasverarbeitung für ferroelektrischen Speicherschaltungen |
US5216572A (en) * | 1992-03-19 | 1993-06-01 | Ramtron International Corporation | Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors |
DE69333864T2 (de) * | 1992-06-12 | 2006-06-29 | Matsushita Electric Industrial Co., Ltd., Kadoma | Herstellungsverfahren für Halbleiterbauelement mit Kondensator |
JP3407204B2 (ja) * | 1992-07-23 | 2003-05-19 | オリンパス光学工業株式会社 | 強誘電体集積回路及びその製造方法 |
KR960010056B1 (ko) * | 1992-12-10 | 1996-07-25 | 삼성전자 주식회사 | 반도체장치 및 그 제조 방법 |
US5348894A (en) * | 1993-01-27 | 1994-09-20 | Texas Instruments Incorporated | Method of forming electrical connections to high dielectric constant materials |
US5679982A (en) * | 1993-02-24 | 1997-10-21 | Intel Corporation | Barrier against metal diffusion |
JP3412051B2 (ja) * | 1993-05-14 | 2003-06-03 | 日本テキサス・インスツルメンツ株式会社 | キャパシタ |
JP3113141B2 (ja) * | 1993-12-28 | 2000-11-27 | シャープ株式会社 | 強誘電体結晶薄膜被覆基板、その製造方法及び強誘電体結晶薄膜被覆基板を用いた強誘電体薄膜デバイス |
US5554564A (en) * | 1994-08-01 | 1996-09-10 | Texas Instruments Incorporated | Pre-oxidizing high-dielectric-constant material electrodes |
US5541807A (en) * | 1995-03-17 | 1996-07-30 | Evans, Jr.; Joseph T. | Ferroelectric based capacitor for use in memory systems and method for fabricating the same |
US5555486A (en) * | 1994-12-29 | 1996-09-10 | North Carolina State University | Hybrid metal/metal oxide electrodes for ferroelectric capacitors |
US5625233A (en) * | 1995-01-13 | 1997-04-29 | Ibm Corporation | Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide |
JPH0936228A (ja) * | 1995-07-21 | 1997-02-07 | Sony Corp | 配線形成方法 |
-
1995
- 1995-11-30 CN CN95119333A patent/CN1075243C/zh not_active Expired - Fee Related
- 1995-12-06 EP EP99118170A patent/EP0971392B1/de not_active Expired - Lifetime
- 1995-12-06 EP EP95119216A patent/EP0720213B1/de not_active Expired - Lifetime
- 1995-12-06 DE DE69527160T patent/DE69527160T2/de not_active Expired - Fee Related
- 1995-12-06 DE DE69525827T patent/DE69525827T2/de not_active Expired - Fee Related
- 1995-12-06 DE DE69531070T patent/DE69531070T2/de not_active Expired - Lifetime
- 1995-12-06 EP EP99118171A patent/EP0971393B1/de not_active Expired - Lifetime
- 1995-12-15 US US08/573,134 patent/US5929475A/en not_active Expired - Lifetime
- 1995-12-28 KR KR1019950061431A patent/KR960026878A/ko active Search and Examination
-
1998
- 1998-10-23 US US09/177,620 patent/US6214660B1/en not_active Expired - Fee Related
-
2001
- 2001-04-30 CN CNB011176083A patent/CN1180465C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1075243C (zh) | 2001-11-21 |
EP0720213A2 (de) | 1996-07-03 |
CN1129354A (zh) | 1996-08-21 |
EP0971392A1 (de) | 2000-01-12 |
DE69531070D1 (de) | 2003-07-17 |
EP0971392B1 (de) | 2003-06-11 |
CN1345088A (zh) | 2002-04-17 |
EP0720213A3 (de) | 1997-05-07 |
US6214660B1 (en) | 2001-04-10 |
EP0720213B1 (de) | 2002-03-13 |
DE69525827T2 (de) | 2002-11-14 |
EP0971393A1 (de) | 2000-01-12 |
DE69531070T2 (de) | 2004-04-22 |
DE69525827D1 (de) | 2002-04-18 |
DE69527160D1 (de) | 2002-07-25 |
CN1180465C (zh) | 2004-12-15 |
US5929475A (en) | 1999-07-27 |
KR960026878A (ko) | 1996-07-22 |
EP0971393B1 (de) | 2002-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69527160T2 (de) | Herstellungsverfahren eines Kondensators für integrierte Schaltkreise | |
DE59610179D1 (de) | Herstellungsverfahren eines vertikal integrierten halbleiterbauelements | |
DE69527484D1 (de) | Herstellungsverfahren für eine leitungsstruktur für integrierte schaltungen | |
DE69030843T2 (de) | Verfahren zum Herstellen von Kondensatoren für integrierte Schaltungen | |
DE69030123T2 (de) | Induktive Strukturen für halbleitende integrierte Schaltungen | |
DE69621011T2 (de) | Kondensator für eine integrierte schaltung | |
DE69522195T2 (de) | Herstellungsverfahren für Halbleiteranordnungen | |
DE69401697T2 (de) | Herstellungsverfahren für einer Festelektrolytkondensator | |
DE69116058T2 (de) | Verfahren zur Herstellung integrierter Schaltungen | |
DE69429896D1 (de) | Verfahren zum Herstellen eines Gehäuses für ein elektronisches Gerät | |
DE69807718T2 (de) | Herstellungsverfahren für integrierte schaltkreise mit reduzierter dimension | |
DE69528084D1 (de) | Verfahren zum Entwurf einer integrierten Halbleiter-Schaltung | |
DE69615883D1 (de) | Verfahren für DRAM-Kondensator-Elektrode | |
DE69015135T2 (de) | Verfahren zum Herstellen eines Kondensators für DRAM-Zelle. | |
DE69501645D1 (de) | Herstellungsverfahren für einen Elektrolytkondensator | |
DE69700481D1 (de) | Herstellungsverfahren für elektronisches TFT-Bauelement | |
DE69506220D1 (de) | Herstellungsverfahren für einen elektrolytischen Kondensator | |
DE69518684D1 (de) | Herstellungsverfahren für ein Feldeffekt-Halbleiterbauelement | |
DE69400566T2 (de) | Herstellungsverfahren für einer Festelektrolytkondensator | |
KR900008649A (ko) | 집적회로의 다량 제조방법 | |
DE69224282D1 (de) | Kasten für integrierte schaltungen | |
DE69300518D1 (de) | Herstellungsverfahren eines keramischen Vielschichtkondensators. | |
DE69220725T2 (de) | Herstellungsverfahren eines Kondensatorelementes für ein DRAM | |
FR2736207B1 (fr) | Procede perfectionne de fabrication de circuits integres | |
DE69425380D1 (de) | Struktur und herstellungsverfahren eines kondensators für eine integrierte schaltung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |