DE69526676T2 - Fluessigkristall-anzeigevorrichtung mit pixeln von hoher kapazitaet - Google Patents
Fluessigkristall-anzeigevorrichtung mit pixeln von hoher kapazitaetInfo
- Publication number
- DE69526676T2 DE69526676T2 DE69526676T DE69526676T DE69526676T2 DE 69526676 T2 DE69526676 T2 DE 69526676T2 DE 69526676 T DE69526676 T DE 69526676T DE 69526676 T DE69526676 T DE 69526676T DE 69526676 T2 DE69526676 T2 DE 69526676T2
- Authority
- DE
- Germany
- Prior art keywords
- liquid crystal
- display device
- crystal display
- high capacity
- pixels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/277,824 US5483366A (en) | 1994-07-20 | 1994-07-20 | LCD with hige capacitance pixel having an ITO active region/poly SI pixel region electrical connection and having poly SI selection line extensions along pixel edges |
PCT/US1995/008785 WO1996002866A1 (en) | 1994-07-20 | 1995-07-20 | Liquid crystal display with high capacitance pixel |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69526676D1 DE69526676D1 (de) | 2002-06-13 |
DE69526676T2 true DE69526676T2 (de) | 2002-12-05 |
Family
ID=23062505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69526676T Expired - Fee Related DE69526676T2 (de) | 1994-07-20 | 1995-07-20 | Fluessigkristall-anzeigevorrichtung mit pixeln von hoher kapazitaet |
Country Status (6)
Country | Link |
---|---|
US (2) | US5483366A (de) |
EP (1) | EP0803078B1 (de) |
JP (1) | JPH10503032A (de) |
KR (1) | KR100382409B1 (de) |
DE (1) | DE69526676T2 (de) |
WO (1) | WO1996002866A1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5402254B1 (en) * | 1990-10-17 | 1998-09-22 | Hitachi Ltd | Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
JPH07199150A (ja) * | 1993-12-28 | 1995-08-04 | Canon Inc | 液晶表示装置 |
JPH07325323A (ja) * | 1994-06-02 | 1995-12-12 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
JPH08306926A (ja) * | 1995-05-07 | 1996-11-22 | Semiconductor Energy Lab Co Ltd | 液晶電気光学装置 |
US5641974A (en) | 1995-06-06 | 1997-06-24 | Ois Optical Imaging Systems, Inc. | LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween |
JP3338281B2 (ja) * | 1996-03-19 | 2002-10-28 | 株式会社東芝 | 液晶表示パネル |
JP3126661B2 (ja) | 1996-06-25 | 2001-01-22 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP3992797B2 (ja) * | 1996-09-25 | 2007-10-17 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置 |
US6088070A (en) * | 1997-01-17 | 2000-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode |
JP3784491B2 (ja) * | 1997-03-28 | 2006-06-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
US6011274A (en) * | 1997-10-20 | 2000-01-04 | Ois Optical Imaging Systems, Inc. | X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween |
US6359672B2 (en) | 1997-10-20 | 2002-03-19 | Guardian Industries Corp. | Method of making an LCD or X-ray imaging device with first and second insulating layers |
JP2000221524A (ja) * | 1999-01-29 | 2000-08-11 | Sanyo Electric Co Ltd | カラー液晶表示装置 |
US6303273B1 (en) * | 1999-03-04 | 2001-10-16 | National Semiconductor Corporation | Single metal pixel array for light valve utilizing lateral sublithographic spacer isolation |
JP3796072B2 (ja) * | 1999-08-04 | 2006-07-12 | シャープ株式会社 | 透過型液晶表示装置 |
JP4089123B2 (ja) * | 2000-02-29 | 2008-05-28 | ソニー株式会社 | 液晶表示装置及びその製造方法 |
US7092059B2 (en) * | 2000-02-29 | 2006-08-15 | Sony Corporation | Liquid crystal display device with particular electrode taper using switching devices and a method of manufacturing the same |
KR100685911B1 (ko) * | 2000-07-04 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 |
TW518552B (en) * | 2000-08-18 | 2003-01-21 | Semiconductor Energy Lab | Liquid crystal display device, method of driving the same, and method of driving a portable information device having the liquid crystal display device |
TW514854B (en) * | 2000-08-23 | 2002-12-21 | Semiconductor Energy Lab | Portable information apparatus and method of driving the same |
WO2003052465A2 (en) * | 2001-12-18 | 2003-06-26 | University Of Rochester | Multifocal aspheric lens obtaining extended field depth |
JP4551049B2 (ja) | 2002-03-19 | 2010-09-22 | 三菱電機株式会社 | 表示装置 |
KR100491821B1 (ko) * | 2002-05-23 | 2005-05-27 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
US7190000B2 (en) * | 2003-08-11 | 2007-03-13 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and manufacturing method thereof |
US7336430B2 (en) * | 2004-09-03 | 2008-02-26 | Micron Technology, Inc. | Extended depth of field using a multi-focal length lens with a controlled range of spherical aberration and a centrally obscured aperture |
KR20130034360A (ko) | 2011-09-28 | 2013-04-05 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP2014199899A (ja) | 2012-08-10 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9231002B2 (en) | 2013-05-03 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
JPH01167733A (ja) * | 1987-12-23 | 1989-07-03 | Seiko Epson Corp | アクティブマトリクス基板 |
US5245452A (en) * | 1988-06-24 | 1993-09-14 | Matsushita Electronics Corporation | Active matric drive liquid crystal display device using polycrystalline silicon pixel electrodes |
JPH0816756B2 (ja) * | 1988-08-10 | 1996-02-21 | シャープ株式会社 | 透過型アクティブマトリクス液晶表示装置 |
US4968119A (en) * | 1989-01-10 | 1990-11-06 | David Sarnoff Research Center, Inc. | High-density liquid-crystal active dot-matrix display structure |
JPH03163529A (ja) * | 1989-11-22 | 1991-07-15 | Sharp Corp | アクティブマトリクス表示装置 |
JP2979655B2 (ja) * | 1991-01-14 | 1999-11-15 | 松下電器産業株式会社 | アクティブマトリクス基板の駆動方法 |
JPH04264259A (ja) * | 1991-02-18 | 1992-09-21 | Hitachi Constr Mach Co Ltd | 超音波顕微鏡装置 |
JPH04264529A (ja) * | 1991-02-20 | 1992-09-21 | Sharp Corp | アクティブマトリクス表示装置 |
KR940004322B1 (ko) * | 1991-09-05 | 1994-05-19 | 삼성전자 주식회사 | 액정표시장치 및 그 제조방법 |
-
1994
- 1994-07-20 US US08/277,824 patent/US5483366A/en not_active Expired - Fee Related
-
1995
- 1995-06-07 US US08/472,836 patent/US6078364A/en not_active Expired - Fee Related
- 1995-07-20 DE DE69526676T patent/DE69526676T2/de not_active Expired - Fee Related
- 1995-07-20 KR KR1019970700370A patent/KR100382409B1/ko not_active IP Right Cessation
- 1995-07-20 EP EP95928063A patent/EP0803078B1/de not_active Expired - Lifetime
- 1995-07-20 WO PCT/US1995/008785 patent/WO1996002866A1/en active IP Right Grant
- 1995-07-20 JP JP8505139A patent/JPH10503032A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
KR100382409B1 (ko) | 2003-12-24 |
EP0803078B1 (de) | 2002-05-08 |
WO1996002866A1 (en) | 1996-02-01 |
EP0803078A1 (de) | 1997-10-29 |
EP0803078A4 (de) | 1998-10-14 |
DE69526676D1 (de) | 2002-06-13 |
JPH10503032A (ja) | 1998-03-17 |
US6078364A (en) | 2000-06-20 |
US5483366A (en) | 1996-01-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: ILJIN DIAMOND CO., LTD., SEOUL/SOUL, KR |
|
8339 | Ceased/non-payment of the annual fee |