DE69525827D1 - Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung - Google Patents

Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung

Info

Publication number
DE69525827D1
DE69525827D1 DE69525827T DE69525827T DE69525827D1 DE 69525827 D1 DE69525827 D1 DE 69525827D1 DE 69525827 T DE69525827 T DE 69525827T DE 69525827 T DE69525827 T DE 69525827T DE 69525827 D1 DE69525827 D1 DE 69525827D1
Authority
DE
Germany
Prior art keywords
making
same
integrated circuit
circuit capacitor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525827T
Other languages
English (en)
Other versions
DE69525827T2 (de
Inventor
Yasuhiro Uemoto
Yasuhiro Shimada
Eiji Fujii
Masamichi Azuma
Koji Arita
Atsuo Inoue
Yoshihisa Nagano
Yasufumi Izutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06327818A external-priority patent/JP3098923B2/ja
Priority claimed from JP7194578A external-priority patent/JPH0945877A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69525827D1 publication Critical patent/DE69525827D1/de
Publication of DE69525827T2 publication Critical patent/DE69525827T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
DE69525827T 1994-12-28 1995-12-06 Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung Expired - Fee Related DE69525827T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP06327818A JP3098923B2 (ja) 1994-12-28 1994-12-28 半導体装置およびその製造方法
JP7194578A JPH0945877A (ja) 1995-07-31 1995-07-31 容量素子の製造方法

Publications (2)

Publication Number Publication Date
DE69525827D1 true DE69525827D1 (de) 2002-04-18
DE69525827T2 DE69525827T2 (de) 2002-11-14

Family

ID=26508587

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69531070T Expired - Lifetime DE69531070T2 (de) 1994-12-28 1995-12-06 Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren
DE69525827T Expired - Fee Related DE69525827T2 (de) 1994-12-28 1995-12-06 Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung
DE69527160T Expired - Fee Related DE69527160T2 (de) 1994-12-28 1995-12-06 Herstellungsverfahren eines Kondensators für integrierte Schaltkreise

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69531070T Expired - Lifetime DE69531070T2 (de) 1994-12-28 1995-12-06 Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69527160T Expired - Fee Related DE69527160T2 (de) 1994-12-28 1995-12-06 Herstellungsverfahren eines Kondensators für integrierte Schaltkreise

Country Status (5)

Country Link
US (2) US5929475A (de)
EP (3) EP0720213B1 (de)
KR (1) KR960026878A (de)
CN (2) CN1075243C (de)
DE (3) DE69531070T2 (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69333864T2 (de) * 1992-06-12 2006-06-29 Matsushita Electric Industrial Co., Ltd., Kadoma Herstellungsverfahren für Halbleiterbauelement mit Kondensator
JP3028080B2 (ja) * 1997-06-18 2000-04-04 日本電気株式会社 半導体装置の構造およびその製造方法
JPH1154721A (ja) 1997-07-29 1999-02-26 Nec Corp 半導体装置の製造方法および製造装置
JP3165093B2 (ja) * 1997-11-13 2001-05-14 松下電子工業株式会社 半導体装置およびその製造方法
KR100252854B1 (ko) * 1997-12-26 2000-04-15 김영환 반도체 메모리 장치 및 그 제조방법
JP3830652B2 (ja) * 1998-02-27 2006-10-04 富士通株式会社 半導体装置及びその製造方法
KR100279297B1 (ko) * 1998-06-20 2001-02-01 윤종용 반도체 장치 및 그의 제조 방법
KR100293720B1 (ko) * 1998-10-01 2001-07-12 박종섭 반도체 소자의 캐패시터 형성 방법
US6323044B1 (en) * 1999-01-12 2001-11-27 Agere Systems Guardian Corp. Method of forming capacitor having the lower metal electrode for preventing undesired defects at the surface of the metal plug
US6340827B1 (en) * 1999-01-13 2002-01-22 Agere Systems Guardian Corp. Diffusion barrier for use with high dielectric constant materials and electronic devices incorporating same
US6258655B1 (en) * 1999-03-01 2001-07-10 Micron Technology, Inc. Method for improving the resistance degradation of thin film capacitors
JP2000353700A (ja) 1999-06-14 2000-12-19 Mitsubishi Electric Corp 高誘電率薄膜の形成方法および半導体装置の製造方法
JP2001148465A (ja) * 1999-11-18 2001-05-29 Nec Corp 半導体装置の製造方法
DE19958203A1 (de) * 1999-12-02 2001-06-13 Infineon Technologies Ag Herstellungsverfahren einer oxidationsgeschüzten Elektrode für einen kapazitive Elektrodenstruktur
US6348373B1 (en) * 2000-03-29 2002-02-19 Sharp Laboratories Of America, Inc. Method for improving electrical properties of high dielectric constant films
US6541861B2 (en) * 2000-06-30 2003-04-01 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method including forming step of SOI structure and semiconductor device having SOI structure
US20050191765A1 (en) * 2000-08-04 2005-09-01 Cem Basceri Thin film capacitor with substantially homogenous stoichiometry
JP2002100740A (ja) * 2000-09-21 2002-04-05 Oki Electric Ind Co Ltd 半導体記憶素子及びその製造方法
US6750113B2 (en) * 2001-01-17 2004-06-15 International Business Machines Corporation Metal-insulator-metal capacitor in copper
DE10120516B4 (de) * 2001-04-26 2004-09-16 Infineon Technologies Ag Halbleiterspeicherzelle und Verfahren zu ihrer Herstellung
US6900498B2 (en) * 2001-05-08 2005-05-31 Advanced Technology Materials, Inc. Barrier structures for integration of high K oxides with Cu and Al electrodes
US7469558B2 (en) * 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US7404877B2 (en) * 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US20030175142A1 (en) * 2002-03-16 2003-09-18 Vassiliki Milonopoulou Rare-earth pre-alloyed PVD targets for dielectric planar applications
US7378356B2 (en) * 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US9793523B2 (en) 2002-08-09 2017-10-17 Sapurast Research Llc Electrochemical apparatus with barrier layer protected substrate
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
WO2004021532A1 (en) * 2002-08-27 2004-03-11 Symmorphix, Inc. Optically coupling into highly uniform waveguides
EP1394811A1 (de) * 2002-08-28 2004-03-03 Matsushita Electric Industrial Co., Ltd. Beschleunigtes Testverfahren für ferroelektrischen Speicher
US7230316B2 (en) 2002-12-27 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transferred integrated circuit
US7238628B2 (en) * 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
TWI331634B (en) 2004-12-08 2010-10-11 Infinite Power Solutions Inc Deposition of licoo2
US7838133B2 (en) * 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
EP2067163A4 (de) 2006-09-29 2009-12-02 Infinite Power Solutions Inc Maskierung von flexiblen substraten und materialbeschränkung zum aufbringen von batterieschichten auf diese
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US8552529B2 (en) 2007-04-11 2013-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US20080251889A1 (en) * 2007-04-11 2008-10-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
KR20150128817A (ko) 2007-12-21 2015-11-18 사푸라스트 리써치 엘엘씨 전해질 막을 위한 표적을 스퍼터링하는 방법
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
JP5705549B2 (ja) 2008-01-11 2015-04-22 インフィニット パワー ソリューションズ， インコーポレイテッド 薄膜電池および他のデバイスのための薄膜カプセル化
CN101494195B (zh) * 2008-01-24 2010-10-20 中芯国际集成电路制造(上海)有限公司 一种电容的制作方法
CN101983469B (zh) 2008-04-02 2014-06-04 无穷动力解决方案股份有限公司 与能量采集关联的储能装置的无源过电压/欠电压控制和保护
DE102008030942A1 (de) 2008-07-02 2010-01-07 Christoph Miethke Gmbh & Co Kg Hirnwasserdrainagen
WO2010019577A1 (en) 2008-08-11 2010-02-18 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
JP5650646B2 (ja) 2008-09-12 2015-01-07 インフィニット パワー ソリューションズ， インコーポレイテッド 電磁エネルギーを介したデータ通信のための一体型伝導性表面を有するエネルギーデバイスおよび電磁エネルギーを介したデータ通信のための方法
US8508193B2 (en) 2008-10-08 2013-08-13 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
KR101792287B1 (ko) 2009-09-01 2017-10-31 사푸라스트 리써치 엘엘씨 집적된 박막 배터리를 갖는 인쇄 회로 보드
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
KR101930561B1 (ko) 2010-06-07 2018-12-18 사푸라스트 리써치 엘엘씨 재충전 가능한 고밀도 전기 화학 장치
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9478411B2 (en) * 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
TWI691092B (zh) 2018-11-05 2020-04-11 力晶積成電子製造股份有限公司 電容單元及其製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119735A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
JPH0751742B2 (ja) * 1986-11-14 1995-06-05 セイコーエプソン株式会社 時計用外装部品
JPS6430252A (en) * 1987-07-27 1989-02-01 Mitsubishi Electric Corp Semiconductor device
DE69023644T2 (de) * 1989-05-07 1996-04-18 Tadahiro Ohmi Verfahren zur herstellung eines siliziumoxydfilmes.
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
EP0415751B1 (de) * 1989-08-30 1995-03-15 Nec Corporation Dünnfilmkondensator und dessen Herstellungsverfahren
EP0503078B1 (de) * 1990-09-28 2001-06-06 Ramtron International Corporation Halbleiter-bauteil
US5514822A (en) * 1991-12-13 1996-05-07 Symetrix Corporation Precursors and processes for making metal oxides
US5401680A (en) * 1992-02-18 1995-03-28 National Semiconductor Corporation Method for forming a ceramic oxide capacitor having barrier layers
EP0557937A1 (de) * 1992-02-25 1993-09-01 Ramtron International Corporation Ozongasverarbeitung für ferroelektrischen Speicherschaltungen
US5216572A (en) * 1992-03-19 1993-06-01 Ramtron International Corporation Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors
DE69333864T2 (de) * 1992-06-12 2006-06-29 Matsushita Electric Industrial Co., Ltd., Kadoma Herstellungsverfahren für Halbleiterbauelement mit Kondensator
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
KR960010056B1 (ko) * 1992-12-10 1996-07-25 삼성전자 주식회사 반도체장치 및 그 제조 방법
US5348894A (en) * 1993-01-27 1994-09-20 Texas Instruments Incorporated Method of forming electrical connections to high dielectric constant materials
US5679982A (en) * 1993-02-24 1997-10-21 Intel Corporation Barrier against metal diffusion
JP3412051B2 (ja) * 1993-05-14 2003-06-03 日本テキサス・インスツルメンツ株式会社 キャパシタ
JP3113141B2 (ja) * 1993-12-28 2000-11-27 シャープ株式会社 強誘電体結晶薄膜被覆基板、その製造方法及び強誘電体結晶薄膜被覆基板を用いた強誘電体薄膜デバイス
US5554564A (en) * 1994-08-01 1996-09-10 Texas Instruments Incorporated Pre-oxidizing high-dielectric-constant material electrodes
US5541807A (en) * 1995-03-17 1996-07-30 Evans, Jr.; Joseph T. Ferroelectric based capacitor for use in memory systems and method for fabricating the same
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
US5625233A (en) * 1995-01-13 1997-04-29 Ibm Corporation Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide
JPH0936228A (ja) * 1995-07-21 1997-02-07 Sony Corp 配線形成方法

Also Published As

Publication number Publication date
CN1180465C (zh) 2004-12-15
US6214660B1 (en) 2001-04-10
DE69531070T2 (de) 2004-04-22
DE69525827T2 (de) 2002-11-14
EP0720213A2 (de) 1996-07-03
CN1129354A (zh) 1996-08-21
DE69527160T2 (de) 2002-11-28
EP0971393B1 (de) 2002-06-19
EP0971392B1 (de) 2003-06-11
EP0720213B1 (de) 2002-03-13
EP0971392A1 (de) 2000-01-12
CN1075243C (zh) 2001-11-21
US5929475A (en) 1999-07-27
DE69531070D1 (de) 2003-07-17
KR960026878A (ko) 1996-07-22
DE69527160D1 (de) 2002-07-25
EP0720213A3 (de) 1997-05-07
CN1345088A (zh) 2002-04-17
EP0971393A1 (de) 2000-01-12

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